MJD2955(cid:2)(PNP), MJD3055(cid:2)(NPN) Complementary Power Transistors DPAK for Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON Features POWER TRANSISTORS • Lead Formed for Surface Mount Applications in Plastic Sleeves 10 AMPERES (No Suffix) 60 VOLTS, 20 WATTS • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to MJE2955 and MJE3055 COMPLEMENTARY • High Current Gain−Bandwidth Product • COLLECTOR COLLECTOR Epoxy Meets UL 94 V−0 @ 0.125 in 2, 4 2, 4 • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 1 1 • BASE BASE These Devices are Pb−Free and are RoHS Compliant 3 3 MAXIMUM RATINGS EMITTER EMITTER Rating Symbol Max Unit 4 Collector−Emitter Voltage VCEO 60 Vdc Collector−Base Voltage VCB 70 Vdc 4 Emitter−Base Voltage VEB 5 Vdc 1 Collector Current IC 10 Adc 1 2 2 3 3 Base Current IB 6 Adc (cid:2) DPAK IPAK To@tal TPCo w=e 2r5 D°Cissipation PD 20 W CASE 369C CASE 369D Derate above 25°C 0.16 W/°C STYLE 1 STYLE 1 Total Power Dissipation (Note 1) PD @ TA = 25°C 1.75 W MARKING DIAGRAMS Derate above 25°C 0.014 W/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range AYWW AYWW J J ESD − Human Body Model HBM 3B V xx55G xx55G ESD − Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum DPAK IPAK Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location †Safe Area Curves are indicated by Figure 1. Both limits are applicable and must Y = Year be observed. WW = Work Week 1. These ratings are applicable when surface mounted on the minimum pad Jxx55 = Device Code sizes recommended. x = 29 or 30 G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2013 − Rev. 13 MJD2955/D

MJD2955 (PNP), MJD3055 (NPN) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) R(cid:2)JA 71.4 °C/W 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎELEÎCTÎRICÎAL CÎHAÎRAÎCTEÎRISÎTICÎS (TÎC = Î25(cid:3)CÎ unÎless ÎotheÎrwisÎe noÎted)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) 60 − Collector Cutoff Current ICEO (cid:3)Adc (VCE = 30 Vdc, IB = 0) − 50 Collector Cutoff Current ICEX mAdc (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) − 0.02 (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150(cid:3)C) − 2 Collector Cutoff Current ICBO mAdc (VCB = 70 Vdc, IE = 0) − 0.02 (VCB = 70 Vdc, IE = 0, TC = 150(cid:3)C) − 2 Emitter Cutoff Current IEBO mAdc (VBE = 5 Vdc, IC = 0) − 0.5 ON CHARACTERISTICS DC Current Gain (Note 3) hFE − (IC = 4 Adc, VCE = 4 Vdc) 20 100 (IC = 10 Adc, VCE = 4 Vdc) 5 − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = 4 Adc, IB = 0.4 Adc) − 1.1 (IC = 10 Adc, IB = 3.3 Adc) − 8 Base−Emitter On Voltage (Note 3) VBE(on) Vdc (IC = 4 Adc, VCE = 4 Vdc) − 1.8 DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) 2 − 3. Pulse Test: Pulse Width ≤ 300 (cid:3)s, Duty Cycle ≤ 2%. http://onsemi.com 2

MJD2955 (PNP), MJD3055 (NPN) TYPICAL CHARACTERISTICS TA TC 2.5 25 S) T 2 20 T A W N ( O 1.5 15 TC TI A P SI DIS 1 10 TA R SURFACE WE MOUNT O P 0.5 5 , D P 0 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 1. Power Derating 500 2 300 VCE = 2 V 1 TJ = 25°C 200 TJ = 150°C 0.7 VCC = 30 V AIN 0.5 IC/IB = 10 G 100 25°C ENT μ(cid:2)(cid:3)s) 0.3 tr RR 50 -(cid:4)55°C E ( 0.2 U M DC C 30 t, TI 0.1 , FE 20 0.07 td @ VBE(off) ≈ 5 V h 0.05 10 0.03 5 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.06 0.1 0.2 0.4 0.6 1 2 4 6 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain Figure 3. Turn−On Time 1.4 5 3 TJ = 25°C 1.2 TJ = 25°C 2 VCC = 30 V IC/IB = 10 S) 1 ts IB1 = IB2 T 1 L O GE (V 0.8 VBE(sat) @ IC/IB = 10 μE ((cid:2)(cid:3)s) 00..57 VOLTA 0.6 VBE @ VCE = 2 V t, TIM 0.3 V, 0.4 0.2 tf 0.1 0.2 VCE(sat) @ IC/IB = 10 0.07 0 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 0.06 0.1 0.2 0.4 0.6 1 2 4 6 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. “On” Voltages, MJD3055 Figure 5. Turn−Off Time http://onsemi.com 3

MJD2955 (PNP), MJD3055 (NPN) 2 VCC +(cid:4)30 V TJ = 25°C 1.6 25 (cid:3)s S) +11 V RC T VOL 1.2 0 RB SCOPE E ( AG VBE(sat) @ IC/IB = 10 -(cid:4)9 V T VOL 0.8 tr, tf ≤ 10 ns 51 D1 V, VBE @ VCE = 3 V DUTY CYCLE = 1% -(cid:4)4 V 0.4 VCE(sat) @ IC/IB = 10 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 00.1 0.2 0.3 0.5 1 2 3 5 10 D(cid:5)1 1MNU5S82T5 B UES FEADS AT BROEVCEO IVBE ≈R 1Y0 T0Y mPAE, eg: IC, COLLECTOR CURRENT (AMP) (cid:5)MSD6100 USED BELOW IB ≈ 100 mA Figure 6. “On” Voltages, MJD2955 Figure 7. Switching Time Test Circuit 1 0.7 L D = 0.5 MA 0.5 HERED) 0.3 0.2 TZ NSIENT ORMALI 0.2 0.1 RR(cid:2)(cid:2)JJCC (t=) =6 .r2(5t)° RC(cid:2)/WJC MAX P(pk) TIVE TRATANCE (N000..00.175 0.002.05 DPRU ECLAUSDRE TV TIEMRSEA A IANPT PS tL1HYO FWONR POWER t1 t2 r(t), EFFECRESIS00..0032 SINGLE PULSE 0.01 TJ(pk) - TC = P(pk) (cid:2)JC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 k t, TIME (ms) Figure 8. Thermal Response 10 Forward Bias Safe Operating Area Information 5 There are two limitations on the power handling ability of P) 3 TJ = 150°C 500(cid:3)(cid:3)s a transistor: average junction temperature and second ENT (AM 21 100(cid:3)(cid:3)s 1(cid:3)ms blirmeaitksd oofw tnh.e S tarafen soispteorra ttihnagt amreuas tc buerv oebs sienrdviecda tfeo IrC r e−l iVabClEe R R 0.5 operation; i.e., the transistor must not be subjected to greater CU 0.3 5(cid:3)ms dc dissipation than the curves indicate. R TO The data of Figure 9 is based on TJ(pk) = 150(cid:3)C; TC is EC 0.1 WIRE BOND LIMIT variable depending on conditions. Second breakdown pulse L COL0.05 THERMAL LIMIT TC = 25°C (D = 0.1) limits are valid for duty cycles to 10% provided I, C00..0023 SECOND BREAKDOWN LIMIT TJ(pk) ≤ 150(cid:3)C. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will 0.01 reduce the power that can be handled to values less than the 0.6 1 2 4 6 10 20 40 60 limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. Maximum Forward Bias Safe Operating Area http://onsemi.com 4

MJD2955 (PNP), MJD3055 (NPN) ORDERING INFORMATION Device Package Type Package Shipping† MJD2955G DPAK 369C 75 Units / Rail (Pb−Free) MJD2955−1G IPAK 369D 75 Units / Rail (Pb−Free) MJD2955T4G DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD2955T4G* DPAK 369C 2,500 / Tape & Reel (Pb−Free) MJD3055G DPAK 369C 75 Units / Rail (Pb−Free) MJD3055T4G DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD3055T4G* DPAK 369C 2,500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable http://onsemi.com 5

MJD2955 (PNP), MJD3055 (NPN) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D NOTES: C 1.DIMENSIONING AND TOLERANCING PER ASME A Y14.5M, 1994. E A 2.CONTROLLING DIMENSION: INCHES. 3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. b3 B c2 4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. L3 4 D Z 5.DOIUMTEENRSMIOONSST DE XATNRDE ME EASR EO FD ETTHEER PMLIANSETDIC A TB OTHDEY. H 6.DATUMS A AND B ARE DETERMINED AT DATUM 1 2 3 DETAIL A PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX L4 A 0.086 0.094 2.18 2.38 b2 A1 0.000 0.005 0.00 0.13 b c b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 L2 GPLAAUNGEE C SPELAATNIENG cD2 00..203158 00..204254 50..4967 60..2621 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC H 0.370 0.410 9.40 10.41 L A1 L 0.055 0.070 1.40 1.78 L1 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC DETAIL A L3 0.035 0.050 0.89 1.27 ROTATED 90(cid:2) CW L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− STYLE 1: PIN 1.BASE 2.COLLECTOR SOLDERING FOOTPRINT* 3.EMITTER 4.COLLECTOR 6.20 3.00 0.244 0.118 2.58 0.102 5.80 1.60 6.17 0.228 0.063 0.243 (cid:2) (cid:3) mm SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6

MJD2955 (PNP), MJD3055 (NPN) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C B C NOTES: 1. DIMENSIONING AND TOLERANCING PER V R E ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS 4 Z DIM MIN MAX MIN MAX A 0.235 0.245 5.97 6.35 A S B 0.250 0.265 6.35 6.73 1 2 3 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 −T− F 0.037 0.045 0.94 1.14 SEATING G 0.090 BSC 2.29 BSC PLANE K H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 F J S 0.025 0.040 0.63 1.01 H V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− D 3 PL G 0.13 (0.005) M T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MJD2955/D 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MJD2955G MJD2955T4G MJD3055T4G NJVMJD2955T4G