MJD243(cid:2)(NPN), MJD253(cid:2)(PNP) Complementary Silicon Plastic Power Transistors DPAK−3 for Surface Mount Applications www.onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR • High DC Current Gain • Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) • COLLECTOR COLLECTOR Straight Lead Version in Plastic Sleeves (“−1” Suffix) 2, 4 2, 4 • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • 1 1 Annular Construction for Low Leakage BASE BASE • Epoxy Meets UL 94 V−0 @ 0.125 in • 3 3 NJV Prefix for Automotive and Other Applications Requiring EMITTER EMITTER Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • 4 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 4 MAXIMUM RATINGS 1 2 1 2 Rating Symbol Value Unit 3 3 Collector−Base Voltage VCB 100 Vdc IPAK DPAK−3 Collector−Emitter Voltage VCEO 100 Vdc CASE 369D CASE 369C STYLE 1 STYLE 1 Emitter−Base Voltage VEB 7.0 Vdc Collector Current − Continuous IC 4.0 Adc MARKING DIAGRAMS Collector Current − Peak ICM 8.0 Adc Base Current IB 1.0 Adc To@tal TDCe v=i c2e5 D°Cissipation PD 12.5 W AYWW AYWW Derate above 25°C 0.1 W/°C J253G J2x3G Total Device Dissipation PD @ TA = 25°C (Note 2) 1.4 W IPAK DPAK Derate above 25°C 0.011 W/°C Operating and Storage Junction TJ, Tstg −65 to +150 °C A = Assembly Location Temperature Range Y = Year ESD − Human Body Model HBM 3B V WW = Work Week x = 4 or 5 ESD − Machine Model MM C V G = Pb−Free Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. When surface mounted on minimum pad sizes recommended. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2016 − Rev. 17 MJD243/D

MJD243 (NPN), MJD253 (PNP) THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎChÎaracÎterisÎticÎÎÎÎÎÎÎÎÎÎÎSymÎboÎl ÎÎÎVaÎlue ÎÎÎÎUnÎit Î ÎÎTheÎrmaÎl ResÎistaÎnceÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΰC/ÎW Î Junction−to−Case R(cid:2)JC 10 ÎÎJÎunctiÎon−tÎo−AÎmbieÎnt (NÎoteÎ 2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRÎ(cid:2)JA ÎÎÎÎ89Î.3 ÎÎÎÎÎÎ 2. When surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc (IC = 10 mAdc, IB = 0) 100 − Collector Cutoff Current ICBO (VCB = 100 Vdc, IE = 0) − 100 nAdc (VCB = 100 Vdc, IE = 0, TJ = 125°C) − 100 (cid:3)Adc Emitter Cutoff Current IEBO nAdc (VBE = 7.0 Vdc, IC = 0) − 100 DC Current Gain (Note 3) hFE − (IC = 200 mAdc, VCE = 1.0 Vdc) 40 180 (IC = 1.0 Adc, VCE = 1.0 Vdc) 15 − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = 500 mAdc, IB = 50 mAdc) − 0.3 (IC = 1.0 Adc, IB = 100 mAdc) − 0.6 Base−Emitter Saturation Voltage (Note 3) VBE(sat) Vdc (IC = 2.0 Adc, IB = 200 mAdc) − 1.8 Base−Emitter On Voltage (Note 3) VBE(on) Vdc (IC = 500 mAdc, VCE = 1.0 Vdc) − 1.5 DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) fT MHz (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) 40 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) − 50 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle (cid:2) 2%. 4. fT = ⎪hFE⎪• ftest. www.onsemi.com 2

MJD243 (NPN), MJD253 (PNP) TA TC 2.5 25 10 500(cid:3)(cid:3)s TTS) 2 20 AMPS) 25 1(cid:3)ms 100(cid:3)(cid:3)s WA T ( TION ( 1.5 15 URREN 0.15 5(cid:3)ms dc R DISSIPA 1 10 TA (SURFACE MOUNT) ECTOR C 00..12 BTHOENRDMINAGL LWYI RLIEM LITIMEDIT E@D TC = 25°C , POWED0.5 5 TC I, COLLC0.05 (cid:2)SCEU(CRSOVINENGSDL ABEPR PPEULALYKS BDEEO)LWONW LIMITED P 0.02 RATED VCEO 0 0 0.01 25 50 75 100 125 150 1 2 5 10 20 50 100 T, TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Active Region Maximum Figure 1. Power Derating Safe Operating Area There are two limitations on the power handling ability of The data of Figure 2 is based on T = 150°C; T is J(pk) C a transistor: average junction temperature and second variable depending on conditions. Second breakdown pulse breakdown. Safe operating area curves indicate IC − VCE limits are valid for duty cycles to 10% provided TJ(pk) limits of the transistor that must be observed for reliable ≤ 150°C. T may be calculated from the data in Figure 3. J(pk) operation; i.e., the transistor must not be subjected to greater At high case temperatures, thermal limitations will reduce dissipation than the curves indicate. the power that can be handled to values less than the limitations imposed by second breakdown. 1 0.7 D = 0.5 0.5 TRANSIENT THERMALSTANCE (NORMALIZED)00000..00...21357 000...01250.010.02 RRDPRU E(cid:2)(cid:2)CJJLACCUSD( R=tE )T V 1=TIEM0 RrS°(EAtC )A I /AN(cid:2)WPTJ PS CMtL1HYAO XFWONR POWER P(pk) t1 t2 r(t), RESI0.03 0 (SINGLE PULSE) TJ(pk) - TC = P(pk) (cid:2)JC(t) DUTY CYCLE, D = t1/t2 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 t, TIME (ms) Figure 3. Thermal Response www.onsemi.com 3

MJD243 (NPN), MJD253 (PNP) NPN PNP MJD243 MJD253 500 200 300 TJ = 150°C VCE = 1.0 V TJ = 150°C VCE = 1.0 V 200 VCE = 2.0 V 100 VCE = 2.0 V 70 25°C AIN 25°C AIN 50 G 100 G ENT 70 -(cid:4)55°C ENT 30 -(cid:4)55°C R R R 50 R 20 U U C C C 30 C D D 10 , E 20 , E F F 7.0 h h 5.0 10 7.0 3.0 5.0 2.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. DC Current Gain 1.4 1.4 TJ = 25°C TJ = 25°C 1.2 1.2 S) 1.0 S) 1.0 OLT OLT VBE(sat) @ IC/IB = 10 V 0.8 VBE(sat) @ IC/IB = 10 V 0.8 E ( E ( G G TA 0.6 VBE @ VCE = 1.0 V TA 0.6 VBE @ VCE = 1.0 V L L O O V V V, 0.4 IC/IB = 10 V, 0.4 IC/IB = 10 5.0 5.0 0.2 0.2 VCE(sat) VCE(sat) 0 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 5. “On” Voltages +(cid:4)2.5 C) C) °V/ °V/+(cid:4)2.0 *APPLIES FOR IC/IB ≤ hFE/3 m m S ( S (+(cid:4)1.5 T T EN EN+(cid:4)1.0 25°C to 150°C CI CI FFI FFI+(cid:4)0.5 *(cid:2)VC FOR VCE(sat) E E O O 0 E C E C -(cid:4)55°C to 25°C R R-(cid:4)0.5 U U T T RA -(cid:4)1.0 25°C to 150°C RA-(cid:4)1.0 25°C to 150°C E E P -(cid:4)1.5 P-(cid:4)1.5 , TEMV -(cid:4)2.0 (cid:2)VB FOR VBE -(cid:4)55°C to 25°C , TEMV-(cid:4)2.0 (cid:2)VB FOR VBE -(cid:4)55°C to 25°C θ θ -(cid:4)2.5 -(cid:4)2.5 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 6. Temperature Coefficients www.onsemi.com 4

MJD243 (NPN), MJD253 (PNP) VCC +(cid:4)30 V 1K 500 25 (cid:3)s RC 300 tr 200 +11 V RB SCOPE 100 0 ns) 50 -(cid:4)9.0 V 51 D1 ME ( 30 TI 20 tr, tf ≤ 10 ns -(cid:4)4 V t, 10 td VCC = 30 V DUTY CYCLE = 1.0% IC/IB = 10 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 53 NPN MJD243 TJ = 25°C (cid:2)D1 MUST BE FAST RECOVERY TYPE, e.g.: 2 PNP MJD253 (cid:2)(cid:2)1N5825 USED ABOVE IB ≈ 100 mA (cid:2)(cid:2)MSD6100 USED BELOW IB ≈ 100 mA 10.01 0.020.030.05 0.1 0.2 0.3 0.5 1 2 3 5 10 FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES IC, COLLECTOR CURRENT (AMPS) Figure 7. Switching Time Test Circuit Figure 8. Turn−On Time 10K 200 5K VCC = 30 V TJ = 25°C 3K ts IC/IB = 10 2K IB1 = IB2 100 t, TIME (ns) 5321000K000 TJ = 25°C APACITANCE (pF) 735000 Cib 100 C 50 C, 20 Cob 3200 tf NPN MJD243 MJD243 (NPN) PNP MJD253 MJD253 (PNP) 10 10 0.01 0.020.030.05 0.1 0.2 0.3 0.5 1 2 3 5 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) Figure 9. Turn−Off Time Figure 10. Capacitance 200 TJ = 25°C 100 E (pF) 70 Cib C AN 50 T CI A AP 30 C C, 20 Cob 10 1 2 3 5 7 10 20 30 50 70 100 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance www.onsemi.com 5

MJD243 (NPN), MJD253 (PNP) ORDERING INFORMATION Device Package Type Package Shipping† MJD243G DPAK−3 369C 75 Units / Rail (Pb−Free) MJD243T4G DPAK−3 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD243T4G* DPAK−3 369C 2,500 / Tape & Reel (Pb−Free) MJD253−1G IPAK 369D 75 Units / Rail (Pb−Free) MJD253T4G DPAK−3 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD253T4G* DPAK−3 369C 2,500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 6

MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: A 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. E C 2.CONTROLLING DIMENSION: INCHES. A 3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI- b3 B MENSIONS b3, L3 and Z. c2 4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL 4 NOT EXCEED 0.006 INCHES PER SIDE. L3 Z 5.DIMENSIONS D AND E ARE DETERMINED AT THE D DETAIL A H 6.DOAUTTUEMRSM OA SATN EDX BT RAERME EDSE OTEFR TMHIEN EPDLA ASTT DICA TBUOMDY. 1 2 3 PLANE H. 7.OPTIONAL MOLD FEATURE. L4 INCHES MILLIMETERS NOTE 7 b2 c BOTTOM VIEW DIM MIN MAX MIN MAX A 0.086 0.094 2.18 2.38 e SIDE VIEW A1 0.000 0.005 0.00 0.13 b b 0.025 0.035 0.63 0.89 0.005 (0.13) M C b2 0.028 0.045 0.72 1.14 TOP VIEW b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 H Z Z D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC L2 GPLAAUNGEE C SPELAATNIENG H 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC L A1 BOTTOM VIEW L3 0.035 0.050 0.89 1.27 L1 ALTERNATE L4 −−− 0.040 −−− 1.01 CONSTRUCTIONS Z 0.155 −−− 3.93 −−− DETAIL A ROTATED 90(cid:2) CW STYLE 1: SOLDERING FOOTPRINT* PIN 1.BASE 2.COLLECTOR 3.EMITTER 6.20 3.00 4.COLLECTOR 0.244 0.118 2.58 0.102 5.80 1.60 6.17 0.228 0.063 0.243 (cid:3) (cid:4) mm SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 7

MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C B C NOTES: 1. DIMENSIONING AND TOLERANCING PER V R E ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS 4 Z DIM MIN MAX MIN MAX A 0.235 0.245 5.97 6.35 A S B 0.250 0.265 6.35 6.73 1 2 3 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 −T− F 0.037 0.045 0.94 1.14 SEATING G 0.090 BSC 2.29 BSC PLANE K H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 F J S 0.025 0.040 0.63 1.01 H V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− D 3 PL G 0.13 (0.005) M T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MJD243/D 8