MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES • High DC Current Gain 25 VOLTS, 12.5 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) PNP NPN • Low Collector−Emitter Saturation Voltage COLLECTOR COLLECTOR • High Current−Gain − Bandwidth Product 2,4 2,4 • Annular Construction for Low Leakage • Epoxy Meets UL 94 V−0 @ 0.125 in 1 • 1 NJV Prefix for Automotive and Other Applications Requiring BASE BASE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 3 3 • These Devices are Pb−Free and are RoHS Compliant EMITTER EMITTER MAXIMUM RATINGS 4 Rating Symbol Max Unit 1 2 Collector−Base Voltage VCB 40 Vdc 3 Collector−Emitter Voltage VCEO 25 Vdc DPAK CASE 369C Emitter−Base Voltage VEB 8.0 Vdc STYLE 1 Collector Current − Continuous IC 5.0 Adc Collector Current − Peak ICM 10 Adc MARKING DIAGRAM Base Current IB 1.0 Adc Total Power Dissipation PD @De rTaCte = a 2b5o°vCe 25°C 102.1.5 WW/°C AYWW J2x0G Total Power Dissipation (Note 1) PD @ TA = 25°C 1.4 W Derate above 25°C 0.011 W/°C Operating and Storage Junction TJ, Tstg −65 to +150 °C A = Assembly Location Temperature Range Y =Year WW =Work Week ESD − Human Body Model HBM 3B V x = 1 or 0 ESD − Machine Model MM C V G =Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the ORDERING INFORMATION Recommended Operating Conditions may affect device reliability. See detailed ordering and shipping information in the package 1. These ratings are applicable when surface mounted on the minimum pad dimensions section on page 6 of this data sheet. sizes recommended. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2013 − Rev. 13 MJD200/D

MJD200 (NPN), MJD210 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 10 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) R(cid:2)JA 89.3 °C/W 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc (IC = 10 mAdc, IB = 0) 25 − Collector Cutoff Current VCBO (VCB = 40 Vdc, IE = 0) − 100 nAdc (VCB = 40 Vdc, IE = 0, TJ = 125°C) − 100 (cid:3)Adc Emitter Cutoff Current VEBO nAdc (VBE = 8 Vdc, IC = 0) − 100 ON CHARACTERISTICS C Current Gain (Note 3), hFE − (IC = 500 mAdc, VCE = 1 Vdc) 70 − (IC = 2 Adc, VCE = 1 Vdc) 45 180 (IC = 5 Adc, VCE = 2 Vdc) 10 − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = 500 mAdc, IB = 50 mAdc) − 0.3 (IC = 2 Adc, IB = 200 mAdc) − 0.75 (IC = 5 Adc, IB = 1 Adc) − 1.8 Base−Emitter Saturation Voltage (Note 3) VBE(sat) Vdc (IC = 5 Adc, IB = 1 Adc) − 2.5 Base−Emitter On Voltage (Note 3) VBE(on) Vdc (IC = 2 Adc, VCE = 1 Vdc) − 1.6 DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) fT MHz (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) 65 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 − 80 MJD210, NJVMJD210T4G − 120 3. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle (cid:2) 2%. 4. fT = ⎪hfe⎪• ftest. http://onsemi.com 2

MJD200 (NPN), MJD210 (PNP) TA TC 2.5 25 VCC +(cid:2)30 V TS) 2 20 25 (cid:3)s T WA +11 V RC N ( 0 SCOPE TIO1.5 15 RB A P -(cid:2)9 V SI R DIS 1 10 TA (SURFACE MOUNT) tr, tf ≤ 10 ns 51 D1 E DUTY CYCLE = 1% OW TC -(cid:2)4 V P0.5 5 P, D RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 0 025 50 75 100 125 150 (cid:3)(cid:3)M1NS5D862150 U0 SUESDE DA BBOEVLEO WIB ≈IB 1≈0 100 m0A mA RFEOVRER PSNEP A TLELS PTO CLIARRCIUTIITE,S T, TEMPERATURE (°C) Figure 1. Power Derating Figure 2. Switching Time Test Circuit 1K 10K 500 td 5K VCC = 30 V 300 3K ts IC/IB = 10 200 2K IB1 = IB2 100 1K TJ = 25°C t, TIME (ns) 532000 tr IVCC/ICB == 3100 V t, TIME (ns) 532000000 10 TJ = 25°C 100 5 50 3 30 2 MJD200 20 MJD200 tf MJD210 MJD210 1 10 0.01 0.020.030.05 0.1 0.2 0.3 0.5 1 2 3 5 10 0.01 0.020.030.05 0.1 0.2 0.3 0.5 1 2 3 5 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Turn−On Time Figure 4. Turn−Off Time http://onsemi.com 3

MJD200 (NPN), MJD210 (PNP) NPN PNP MJD200 MJD210 400 400 TJ = 150°C 25°C TJ = 150°C N 200 N 200 AI AI NT G -(cid:2)55°C NT G 25°C E E R 100 R 100 R R CU 80 CU 80 -(cid:2)55°C C C D 60 D 60 , E , E F F h 40 VCE = 1 V h 40 VCE = 1 V VCE = 2 V VCE = 2 V 20 20 0.050.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 0.050.070.1 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. DC Current Gain 2 2 TJ = 25°C TJ = 25°C 1.6 1.6 S) S) T T L L O 1.2 O 1.2 V V E ( E ( G G LTA 0.8 VBE(sat) @ IC/IB = 10 LTA 0.8 VBE(sat) @ IC/IB = 10 O O V V V, VBE @ VCE = 1 V V, VBE @ VCE = 1 V 0.4 0.4 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0 0.050.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. “On” Voltage +(cid:2)2.5 +(cid:2)2.5 °V/C) +(cid:2)2 *APPLIES FOR IC/IB ≤ hFE/3 °V/C) +(cid:2)2 *APPLIES FOR IC/IB ≤ hFE/3 m m S (+(cid:2)1.5 S (+(cid:2)1.5 25°C to 150°C T T N +(cid:2)1 N +(cid:2)1 E E CI CI EFFI+(cid:2)0.5 (cid:2)VC for VCE(sat) 25°C to 150°C EFFI+(cid:2)0.5 *(cid:2)VC for VCE(sat) CO 0 CO 0 -(cid:2)55°C to 25°C RE -(cid:2)0.5 -(cid:2)55°C to 25°C RE -(cid:2)0.5 TU TU 25°C to 150°C RA -(cid:2)1 25°C to 150°C RA -(cid:2)1 EMPE-(cid:2)1.5 (cid:2)VB for VBE EMPE-(cid:2)1.5 (cid:2)VB for VBE -(cid:2)55°C to 25°C , TV -(cid:2)2 -(cid:2)55°C to 25°C , TV -(cid:2)2 θ θ -(cid:2)2.5 -(cid:2)2.5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Temperature Coefficients http://onsemi.com 4

MJD200 (NPN), MJD210 (PNP) 1 0.7 D = 0.5 0.5 THERMALRMALIZED) 00..23 00..21 R(cid:2)JC(t) = r(t) (cid:2)JC P(pk) r(t), TRANSIENT RESISTANCE (NO0000...000.1573 0.005 (SINGLE0 .P0U1LSE0.)02 RDPRTJU E(cid:2)C(JpLACUkSD) R=E- T V 1TTIEM0CRS° EAC= A I /ANPWPT( PpS MtkL1H)Y A(cid:2)O XFJWCO(NtR) POWER DUTtY1 CtY2CLE, D = t1/t2 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 t, TIME (ms) Figure 8. Thermal Response 10 There are two limitations on the power handling ability of 5(cid:4)ms 5 a transistor: average junction temperature and second NT (AMP) 213 TJ = 150°C 510000(cid:4)(cid:3)(cid:4)(cid:3)ss 1(cid:4)ms bloirpmeeairtkasdt iooofwn ;tn hi..e eS .t,a rtafhene s otirspateonrrsa itstihtnoagrt mamrueusast t nc buoert v boeebs ssiuenbrdvjieeccdat etfedo IrtoC r ge−lr ieVaabCtelEer E R R dissipation than the curves indicate. U dc R C The data of Figure 9 is based on TJ(pk) = 150°C; TC is TO BONDING WIRE LIMITED variable depending on conditions. Second breakdown pulse EC0.1 THERMALLY LIMITED @ TC = 25°C limits are valid for duty cycles to 10% provided T L J(pk) OL (cid:3)(SINGLE PULSE) ≤ 150°C. T may be calculated from the data in Figure 8. C SECOND BREAKDOWN LIMITED J(pk) I, C (cid:3)CURVES APPLY BELOW At high case temperatures, thermal limitations will reduce (cid:3)RATED VCEO the power that can be handled to values less than the 0.01 limitations imposed by second breakdown. 0.3 1 2 3 5 7 10 20 30 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 9. Active Region Safe Operating Area 200 TJ = 25°C F) 100 Cib p E ( C N 70 A T CI A P 50 A C, C Cob MJD200 (NPN) 30 MJD210 (PNP) 20 0.4 0.6 1 2 4 6 10 20 40 VR, REVERSE VOLTAGE (V) Figure 10. Capacitance http://onsemi.com 5

MJD200 (NPN), MJD210 (PNP) ORDERING INFORMATION Device Package Type Shipping† MJD200G DPAK 75 Units / Rail (Pb−Free) MJD200RLG DPAK 1,800 / Tape & Reel (Pb−Free) MJD200T4G DPAK 2,500 / Tape & Reel (Pb−Free) MJD210G DPAK 75 Units / Rail (Pb−Free) MJD210RLG DPAK 1,800 / Tape & Reel (Pb−Free) MJD210T4G DPAK 2,500 / Tape & Reel (Pb−Free) NJVMJD210T4G* DPAK 2,500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable http://onsemi.com 6

MJD200 (NPN), MJD210 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D NOTES: C 1.DIMENSIONING AND TOLERANCING PER ASME A Y14.5M, 1994. E A 2.CONTROLLING DIMENSION: INCHES. 3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. b3 B c2 4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. L3 4 D Z 5.DOIUMTEENRSMIOONSST DE XATNRDE ME EASR EO FD ETTHEER PMLIANSETDIC A TB OTHDEY. H 6.DATUMS A AND B ARE DETERMINED AT DATUM 1 2 3 DETAIL A PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX L4 A 0.086 0.094 2.18 2.38 b2 A1 0.000 0.005 0.00 0.13 b c b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 L2 GPLAAUNGEE C SPELAATNIENG cD2 00..203158 00..204254 50..9476 60..2621 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC H 0.370 0.410 9.40 10.41 L A1 L 0.055 0.070 1.40 1.78 L1 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC DETAIL A L3 0.035 0.050 0.89 1.27 ROTATED 90(cid:2) CW L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− SOLDERING FOOTPRINT* STYLE 1: PIN 1.BASE 2.COLLECTOR 3.EMITTER 6.20 3.0 4.COLLECTOR 0.244 0.118 2.58 0.101 5.80 1.6 6.172 0.228 0.063 0.243 (cid:3) (cid:4) mm SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MJD200/D 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MJD200G MJD200RLG MJD200T4G MJD210G MJD210RLG MJD210T4G