MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES • Lead Formed for Surface Mount Applications in Plastic Sleeves 100 VOLTS, 20 WATTS (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular TIP31 and TIP32 Series • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant* DPAK DPAK−3 CASE 369C CASE 369D MARKING DIAGRAMS AYWW YWW J11xG J11xG DPAK DPAK−3 A = Assembly Location Y = Year WW = Work Week x = 2 or 7 G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: November, 2013 − Rev. 13 MJD112/D

MJD112 (NPN), MJD117 (PNP) MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc Collector Current IC Adc Continuous 2 Peak 4 Base Current IB 50 mAdc Total Power Dissipation PD W @ TC = 25°C 20 W/°C Derate above 25°C 0.16 Total Power Dissipation (Note1) PD W @ TA = 25°C 1.75 W/°C Derate above 25°C 0.014 Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) R(cid:2)JA 71.4 °C/W 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 2

MJD112 (NPN), MJD117 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎELEÎÎCTÎÎRICÎÎAL CÎÎHAÎÎRAÎÎCTEÎÎRISÎÎTICÎÎS (TÎÎC = ÎÎ25(cid:2)CÎÎ unÎÎless ÎÎotheÎÎrwisÎÎe noÎÎted)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCÎÎharÎÎacteÎÎristiÎÎc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymÎÎbolÎÎÎÎÎMÎÎin ÎÎÎÎÎMÎÎax ÎÎÎÎÎUÎÎnitÎÎ ÎÎÎÎOFFÎÎ CHÎÎARAÎÎCTEÎÎRISÎÎTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎCollÎectoÎr−EmÎitterÎ SusÎtainÎing VÎoltaÎge (NÎote Î2) ÎÎÎÎÎÎÎÎÎÎVÎCEOÎ(sus)ÎÎÎÎÎÎÎÎÎÎÎVÎdcÎ ÎÎÎÎ(IÎÎC = 3ÎÎ0 mÎÎAdc,ÎÎ IB =ÎÎ 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ10ÎÎ0 ÎÎÎÎÎÎÎÎ− ÎÎÎÎÎÎÎÎÎÎ ÎÎCollÎectoÎr CuÎtoff CÎurreÎnt ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICEÎO ÎÎÎÎÎÎÎÎÎÎÎ(cid:3)ÎAdcÎ (VCE = 50 Vdc, IB = 0) − 20 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current ICBO (cid:3)Adc ÎÎÎÎ(VÎÎCB =ÎÎ 100ÎÎ VdÎÎc, IEÎÎ = 0)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎÎÎÎ2ÎÎ0 ÎÎÎÎÎÎÎÎÎÎ ÎÎEmiÎtter CÎutoÎff CuÎrrenÎt ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIEBÎO ÎÎÎÎÎÎÎÎÎÎÎmÎAdcÎ ÎÎÎÎ(VÎÎBE =ÎÎ 5 VÎÎdc, IÎÎC = ÎÎ0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎÎÎÎÎÎ2 ÎÎÎÎÎÎÎÎÎÎ ÎÎCollÎectoÎr−CuÎtoff ÎCurrÎent ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICBÎO ÎÎÎÎÎÎÎÎÎÎÎ(cid:3)ÎAdcÎ (VCB = 80 Vdc, IE = 0) − 10 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Cutoff Current IEBO mAdc ÎÎÎÎ(VÎÎBE =ÎÎ 5 VÎÎdc, IÎÎC = ÎÎ0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎÎÎÎÎ2 ÎÎÎÎÎÎÎÎÎ ÎÎÎÎON ÎÎCHAÎÎRACÎÎTERÎÎISTÎÎICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎDC ÎCurrÎent GÎainÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎhFÎE ÎÎÎÎÎÎÎÎÎÎÎÎ− Î ÎÎ(IÎC = 0Î.5 AÎdc, VÎCE Î= 3 VÎdc)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ50Î0 ÎÎÎÎ− ÎÎÎÎÎ (IC = 2 Adc, VCE = 3 Vdc) 1000 12,000 ÎÎÎÎ(IÎÎC = 4ÎÎ AdcÎÎ, VCÎÎE = ÎÎ3 VdÎÎc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ20ÎÎ0 ÎÎÎÎÎÎÎÎ− ÎÎÎÎÎÎÎÎÎÎ ÎÎCollÎectoÎr−EmÎitterÎ SatÎuratiÎon VÎoltagÎe ÎÎÎÎÎÎÎÎÎÎÎÎÎVCEÎ(sat)ÎÎÎÎÎÎÎÎÎÎÎVÎdcÎ (IC = 2 Adc, IB = 8 mAdc) − 2 ÎÎ(IÎC = 4Î AdcÎ, IB Î= 40Î mAÎdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎ3 ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter Saturation Voltage VBE(sat) Vdc ÎÎÎÎ(IÎÎC = 4ÎÎ AdcÎÎ, IB ÎÎ= 40ÎÎ mAÎÎdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎÎÎÎÎÎ4 ÎÎÎÎÎÎÎÎÎÎ ÎÎBasÎe−EmÎitteÎr OnÎ VoltÎageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVBEÎ(on)ÎÎÎÎÎÎÎÎÎÎÎVÎdcÎ ÎÎÎÎ(IÎÎC = 2ÎÎ AdcÎÎ, VCÎÎE = ÎÎ3 VdÎÎc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎÎÎ2ÎÎ.8 ÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎCurrÎent−ÎGainÎ − BÎandÎwidthÎ ProÎducÎt ÎÎÎÎÎÎÎÎÎÎÎÎÎfTÎÎÎÎÎÎÎÎÎÎÎÎMÎHzÎ (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) 25 − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance Cob pF ÎÎ(VÎCB =Î 10 ÎVdcÎ, IE =Î 0, fÎ = 0.Î1 MhÎz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJD117, NJVMJD117T4G − 200 ÎÎÎMJDÎ112Î, NJÎVMJÎD112ÎG, NÎJVMÎJDÎ112TÎ4GÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎ1Î00 ÎÎÎÎÎ 2. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 3

MJD112 (NPN), MJD117 (PNP) R(cid:5)(cid:5)B(cid:5)D &1 ,1R MNC5U V8SA2TR5 BIUEESD EF TADOS A TOB BROTEVACEION IB VD E≈ER S1Y0IR 0TE YmDPA EC,U eR.gR.:ENT LEVELS -V(cid:4)3C0C V 4 ts IVCC/ICB == 3205 0V ITBJ1 == 2IB52°C (cid:5)(cid:5)MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE 2 TUT AP+PV(cid:4)8R2 VOX RB μE ((cid:2)(cid:3)s) 1 tf 0 51 D1 ≈ 8 k ≈ 60 t, TIM 00..86 tr V1 APPROX + 4 V 0.4 -12 V 25 (cid:3)s td @ VBE(off) = 0 V tDr,U tfT ≤Y 1C0Y nCsLE = 1% FAONDR Vtd2 A =N 0D tr, D1 IS DISCONNECTED 0.2 PNNPPN FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 IC, COLLECTOR CURRENT (AMP) Figure 1. Switching Times Test Circuit Figure 2. Switching Times 1 D) 0.7 D = 0.5 E Z 0.5 VE TRANSIENTANCE (NORMALI 000...321 0.000.51.2 RR(cid:2)(cid:2)JJCC (t=) =6 .r2(5t)° RC(cid:2)/WJC P(pk) FECTIESIST0.07 0.01 DPU CLUSREV TERSA AINP PSLHYO FWONR POWER t1 r(t), EFRMAL R00..0053 SINGLE PULSE RTJE(pAkD) - T TIMC E= APT(p tk1) (cid:2)JC(t) DUTY CtY2CLE, D = t1/t2 HE0.02 T 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms) Figure 3. Thermal Response http://onsemi.com 4

MJD112 (NPN), MJD117 (PNP) ACTIVE−REGION SAFE−OPERATING AREA TA TC 10 2.5 25 7 5 MP) 3 500(cid:3)(cid:3)s 100(cid:3)(cid:3)s TS) 2 20 A 2 T T ( WA OLLECTOR CURREN 00000.....312157 BTSHOEE1CN(cid:3)RODmMNIsNADGL B WLRIIMERAIETK LDIOMdWI5Tc(cid:3)NEmD LsIMIT WER DISSIPATION ( 1.15 1150 SMUROTFUAA NCTE TC C O I, C TJ = 150°C , PD0.5 5 P CURVES APPLY BELOW RATED VCEO 0 0 2 3 5 7 10 20 30 50 70 100 200 25 50 75 100 125 15 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) T, TEMPERATURE (°C) Figure 4. Maximum Rated Forward Biased Figure 5. Power Derating Safe Operating Area There are two limitations on the power handling ability of 200 a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE TC = 25°C 100 limits of the transistor that must be observed for reliable F) p operation; i.e., the transistor must not be subjected to greater E ( 70 C dissipation than the curves indicate. N A 50 The data of Figures 5 and 6 is based on TJ(pk) = 150(cid:2)C; TC ACIT Cob is variable depending on conditions. Second breakdown P CA 30 pulse limits are valid for duty cycles to 10% provided C, Cib TJ(pk) < 150(cid:2)C. TJ(pk) may be calculated from the data in 20 Figure 4. At high case temperatures, thermal limitations will PNP reduce the power that can be handled to values less than the NPN 10 limitations imposed by second breakdown. 0.04 0.060.1 0.2 0.4 0.6 1 2 4 6 10 20 40 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 5

MJD112 (NPN), MJD117 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD112 PNP MJD117 6 k 6 k TJ = 125°C VCE = 3 V TC = 125°C VCE = 3 V 4 k 4 k 3 k 3 k N N GAI GAI 25°C T 2 k 25°C T 2 k N N E E R R R R U U C C C 1 k C 1 k D D , FE 800 -(cid:4)55°C , FE 800 -(cid:4)55°C h 600 h 600 400 400 300 300 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 7. DC Current Gain S) 3.4 S) 3.4 OLT TJ = 125°C OLT TJ = 125°C LTAGE (V 2.36 0I.C5 =A 1 A 2 A 4 A LTAGE (V 2.36 0I.C5 =A 1 A 2 A 4 A O O V V R 2.2 R 2.2 E E T T T T EMI 1.8 EMI 1.8 - - R R O O T 1.4 T 1.4 C C E E L L L L O 1 O 1 C C , E , E VC 0.6 VC 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 0.1 0.2 0.5 1 2 5 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.8 1.8 S) S) T T VOL 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VOL 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V E ( E ( G G A A T T L 1 L 1 O O V, V VCE(sat) @ IC/IB = 250 V, V VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. “On Voltages http://onsemi.com 6

MJD112 (NPN), MJD117 (PNP) NPN MJD112 PNP MJD117 +(cid:4)0.8 +(cid:4)0.8 °C) *APPLIED FOR IC/IB < hFE/3 °C) *APPLIES FOR IC/IB < hFE/3 V/ 0 V/ 0 m m S ( S ( 25°C TO 150°C T T N -(cid:4)0.8 N -(cid:4)0.8 E E CI 25°C TO 150°C CI EFFI -(cid:4)1.6 EFFI -(cid:4)1.6 *(cid:2)VC FOR VCE(sat) E CO -(cid:4)2.4 *(cid:2)VC FOR VCE(sat) E CO -(cid:4)2.4 -(cid:4)55°C TO 25°C UR -(cid:4)55°C TO 25°C UR 25°C TO 150°C T T RA -(cid:4)3.2 25°C TO 150°C RA -(cid:4)3.2 E E EMP -(cid:4)4 (cid:2)VC FOR VBE -(cid:4)55°C TO 25°C EMP -(cid:4)4 (cid:2)VB FOR VBE -(cid:4)55°C TO 25°C T T , V , V θ θ -(cid:4)4.8 -(cid:4)4.8 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients 105 105 REVERSE FORWARD REVERSE FORWARD A) 104 A) 104 μ(cid:2)(cid:3) μ(cid:2)(cid:3) T ( T ( EN 103 VCE = 30 V EN 103 VCE = 30 V R R R R U U R C 102 R C 102 CTO TJ = 150°C CTO TJ = 150°C LE 101 LE 101 L L CO CO 100°C , IC 100 100°C , IC 100 25°C 25°C 10-1 10-1 -(cid:4)0.6 -(cid:4)0.4 -(cid:4)0.2 0 +(cid:4)0.2 +(cid:4)0.4 +(cid:4)0.6 +(cid:4)0.8 +(cid:4)1 +(cid:4)1.2 +(cid:4)1.4 +(cid:4)0.6 +(cid:4)0.4 +(cid:4)0.2 0 -(cid:4)0.2 -(cid:4)0.4 -(cid:4)0.6 -(cid:4)0.8 -(cid:4)1 -(cid:4)1.2 -(cid:4)1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cut−Off Region PNP COLLECTOR NPN COLLECTOR BASE BASE ≈8 k ≈120 ≈8 k ≈120 EMITTER EMITTER Figure 12. Darlington Schematic http://onsemi.com 7

MJD112 (NPN), MJD117 (PNP) ORDERING INFORMATION Device Package Type Package Shipping† MJD112G DPAK 369C 75 Units / Rail (Pb−Free) NJVMJD112G* DPAK 369C 75 Units / Rail (Pb−Free) MJD112−1G DPAK−3 369D 75 Units / Rail (Pb−Free) MJD112RLG DPAK 369C 1,800 Tape & Reel (Pb−Free) MJD112T4G DPAK 369C 2,500 Tape & Reel (Pb−Free) NJVMJD112T4G* DPAK 369C 2,500 Tape & Reel (Pb−Free) MJD117G DPAK 369C 75 Units / Rail (Pb−Free) MJD117−1G DPAK−3 369D 75 Units / Rail (Pb−Free) MJD117RLG DPAK 369C 1,800 Tape & Reel (Pb−Free) MJD117T4G DPAK 369C 2,500 Tape & Reel (Pb−Free) NJVMJD117T4G* DPAK 369C 2,500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 8

MJD112 (NPN), MJD117 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D NOTES: C 1.DIMENSIONING AND TOLERANCING PER ASME A Y14.5M, 1994. E A 2.CONTROLLING DIMENSION: INCHES. 3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. b3 B c2 4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. L3 4 Z 5.DOIUMTEENRSMIOONSST DE XATNRDE ME EASR EO FD ETTHEER PMLIANSETDIC A TB OTHDEY. D H 6.DATUMS A AND B ARE DETERMINED AT DATUM 1 2 3 DETAIL A PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX L4 A 0.086 0.094 2.18 2.38 b2 A1 0.000 0.005 0.00 0.13 b c b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 L2 GPLAAUNGEE C SPELAATNIENG cD2 00..203158 00..204254 50..9476 60..2621 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC H 0.370 0.410 9.40 10.41 L A1 L 0.055 0.070 1.40 1.78 L1 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC DETAIL A L3 0.035 0.050 0.89 1.27 ROTATED 90(cid:2) CW L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− STYLE 1: PIN 1.BASE SOLDERING FOOTPRINT* 2.COLLECTOR 3.EMITTER 4.COLLECTOR 6.20 3.0 0.244 0.118 2.58 0.101 5.80 1.6 6.172 0.228 0.063 0.243 (cid:3) (cid:4) mm SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9

MJD112 (NPN), MJD117 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C B C NOTES: 1. DIMENSIONING AND TOLERANCING PER V R E ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS 4 Z DIM MIN MAX MIN MAX A 0.235 0.245 5.97 6.35 A S B 0.250 0.265 6.35 6.73 1 2 3 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 −T− F 0.037 0.045 0.94 1.14 SEATING G 0.090 BSC 2.29 BSC PLANE K H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 F J S 0.025 0.040 0.63 1.01 H V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− D 3 PL G 0.13 (0.005) M T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MJD112/D 10

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MJD112-1G MJD112G MJD112RLG MJD112T4G MJD117-1G MJD117G MJD117T4G NJVMJD117T4G NJVMJD112T4G