MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc 60 − 120 VOLTS h = 400 (Min) @ I = 50 Adc FE C 300 WATTS • Curves to 100 A (Pulsed) • Diode Protection to Rated I C • NPN PNP Monolithic Construction with Built−In Base−Emitter Shunt Resistor • Junction Temperature to +200(cid:2)C CCOASLLEECTOR CCOASLLEECTOR • Pb−Free Packages are Available* BASE BASE 1 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit EMITTER 2 EMITTER 2 Collector−Emitter Voltage MJ11028/29 VCEO 60 Vdc MJ11028 MJ11029 MJ11030 90 MJ11030 MJ11033 MJ11032/33 120 MJ11032 Collector−Base Voltage MJ11028/29 VCBO 60 Vdc MJ11030 90 MJ11032/33 120 MARKING DIAGRAM Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 50 Adc − Peak (Note 1) 100 1 2 Base Current − Continuous IB 2.0 Adc MJ110xxG Total Power Dissipation @ TC = 25°C PD 300 W TO−204 (TO−3) AYYWW Derate Above 25°C @ TC = 100(cid:2)C 1.71 W/°C CASE 197A MEX STYLE 1 Operating and Storage Junction TJ, Tstg −(cid:2)(cid:2)55 to +200 °C Temperature Range MJ110xx = Device Code THERMAL CHARACTERISTICS xx = 28, 29, 30, 32, 33 ÎÎÎÎÎChÎaracÎterisÎticÎÎÎÎÎSÎymbÎÎol ÎMÎaxÎÎÎUnÎit G = Pb−Free Package ÎÎMSoalxdÎiemriunÎmg PLeuÎarpdo TsÎeems pfÎoerr a(cid:2)tÎu 1re0 fÎsoercoÎndsÎÎÎÎTLÎÎÎÎ275ÎÎÎ(cid:2)CÎ AYY == LYoecaartion Code ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ WW = Work Week Thermal Resistance, Junction−to−Case R(cid:2)JC 0.58 °C/W MEX = Country of Orgin Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not ORDERING INFORMATION normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and See detailed ordering and shipping information in the package reliability may be affected. dimensions section on page 3 of this data sheet. 1. Pulse Test: Pulse Width = 5 (cid:3)s, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: September, 2008 − Rev. 6 MJ11028/D

MJ11028, MJ11030, MJ11032 (NPN) COLLECTOR COLLECTOR PNP NPN MJ11029 MJ11028 MJ11033 MJ11030 MJ11032 BASE BASE ≈3.0 k ≈25 ≈3.0 k ≈25 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) MJ11028, MJ11029 V(BR)CEO 60 − Vdc (IC = 1 00 mAdc, IB = 0) MJ11030 90 − MJ11032, MJ11033 120 − Collector−Emitter Leakage Current ICER mAdc (VCE = 60 Vdc, RBE = 1 k(cid:4)) MJ11028, MJ11029 − 2 (VCE = 90 Vdc, RBE = 1 k(cid:4)) MJ11030 − 2 (VCE = 120 Vdc, RBE = 1 k(cid:4)) MJ11032, MJ11033 − 2 (VCE = 60 Vdc, RBE = 1 k(cid:4), TC = 150(cid:2)C) MJ11028, MJ11029 − 10 (VCE = 120 Vdc, RBE = 1 k(cid:4), TC = 150(cid:2)C) MJ11032, MJ11033 − 10 Emitter Cutoff Current IEBO mAdc (VBE = 5 Vdc, IC = 0) − 5 Collector−Emitter Leakage Current ICEO mAdc (VCE = 50 Vdc, IB = 0) − 2 ON CHARACTERISTICS (Note 1) DC Current Gain hFE − (IC = 25 Adc, VCE = 5 Vdc) 1 k 18 k (IC = 50 Adc, VCE = 5 Vdc) 400 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 25 Adc, IB = 250 mAdc) − 2.5 (IC = 50 Adc, IB = 500 mAdc) − 3.5 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 25 Adc, IB = 200 mAdc) − 3.0 (IC = 50 Adc, IB = 300 mAdc) − 4.5 1. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2.0%. http://onsemi.com 2

MJ11028, MJ11030, MJ11032 (NPN) ORDERING INFORMATION Device Package Shipping MJ11028 TO−204 MJ11028G TO−204 (Pb−Free) MJ11029 TO−204 MJ11029G TO−204 (Pb−Free) MJ11030 TO−204 MJ11030G TO−204 100 Units / Tray (Pb−Free) MJ11032 TO−204 MJ11032G TO−204 (Pb−Free) MJ11033 TO−204 MJ11033G TO−204 (Pb−Free) 100 There are two limitations on the power−handling ability 50 of a transistor: average junction temperature and second MP) breakdown. Safe operating area curves indicate IC − VCE T (A 20 limits of the transistor that must be observed for reliable EN 10 operation, i.e., the transistor must not be subjected to greater R UR 5 BONDING WIRE LIMITED dissipation than the curves indicate. R C THERMALLY LIMITED @ TC = 25°C The data of Figure 2 is based on TJ(pk) = 200(cid:2)C; TC is TO 2 SECOND BREAKDOWN LIMITED variable depending on conditions. At high case C LLE 1 MJ11028, 29 temperatures, thermal limitations will reduce the power that CO0.5 MJ11032, 33 can be handled to values less than the limitations imposed by , C second breakdown. I 0.2 0.1 0.2 0.5 1 2 5 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Safe Operating Area 100 k S) 5 T 50 k VCE = 5 V OL MJ11029, MJ11033 PNP TJ = 25°C E (V 4 MJ11028, MJ11030, MJ11032 NPN 20 k G GAIN 10 k OLTA ENT 5 k ER V 3 TJ = 25°C VBE(sat) h, DC CURRFE 5210 0kk MJ11028, MMJJ1111003209,, MMJJ1111003323 NPNPNP ECTOR-EMITT 2 IC/IB = 100 L 1 L 200 80 (cid:3)s CO 80 (cid:3)s (PULSED) , CE VCE(sat) (PULSED) 100 V 0 1 2 5 10 20 50 100 1 2 3 5 10 20 50 100 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain Figure 4. “On” Voltage http://onsemi.com 3

MJ11028, MJ11030, MJ11032 (NPN) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 197A−05 ISSUE K A NOTES: 1.DIMENSIONING AND TOLERANCING PER N ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: INCH. C −T− SEATING INCHES MILLIMETERS E PLANE DIM MIN MAX MIN MAX A 1.530 REF 38.86 REF D 2 PL K B 0.990 1.050 25.15 26.67 0.30 (0.012) M T Q M Y M C 0.250 0.335 6.35 8.51 D 0.057 0.063 1.45 1.60 E 0.060 0.070 1.53 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC U −Y− N 0.760 0.830 19.31 21.08 V L Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC 2 V 0.131 0.188 3.33 4.77 G B STYLE 1: H 1 PIN 1.BASE 2.EMITTER CASE:COLLECTOR −Q− 0.25 (0.010) M T Y M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com MJ11028/D 4

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MJ11028G MJ11032G MJ11033G