Fast Recovery MEO 550-02 DA V = 200 V RRM Epitaxial Diode I = 582 A FAVM t = 150 ns (FRED) Module rr 3 1 3 V V Type RSM RRM 1 V V 200 200 MEO 550-02DA Symbol Test Conditions Maximum Ratings I T =75(cid:1)C 822 A Features IFRMS(cid:255)(cid:255)(cid:2) TC =75(cid:1)C; rectangular, d = 0.5 582 A (cid:1) International standard package IFAVM tC < 10 (cid:2)s; rep. rating, pulse width limited by T 2880 A with DCB ceramic base plate FRM P VJM I T = 45(cid:1)C; t = 10 ms (50 Hz), sine 4800 A (cid:1) Planar passivated chips FSM VJ t = 8.3 ms(60 Hz), sine 5280 A (cid:1) Short recovery time T = 150(cid:1)C; t = 10 ms (50 Hz), sine 4320 A (cid:1) Low switching losses VJ t = 8.3 ms(60 Hz), sine 4750 A (cid:1) Soft recovery behaviour I2t T = 45(cid:1)C; t = 10 ms (50 Hz), sine 115200 A2s (cid:1) Isolation voltage 3600 V~ VJ t = 8.3 ms(60 Hz), sine 117100 A2s (cid:1) UL registered E 72873 T = 150(cid:1)C; t = 10 ms (50 Hz), sine 93300 A2s Applications VJ t = 8.3 ms(60 Hz), sine 94800 A2s (cid:1) Antiparallel diode for high frequency T -40...+150 (cid:1)C switching devices TTVsStJmgax -40...+112105 (cid:1)(cid:1)CC (cid:1) Fanrede m wohtoere lcinogn tdroiol dceir cinu ictsonverters P T = 25(cid:1)C 1750 W (cid:1) Inductive heating and melting tot C V 50/60 Hz, RMS t = 1 min 3000 V~ (cid:1) Uninterruptible power supplies (UPS) ISOL I (cid:3) 1 mA t = 1 s 3600 V~ (cid:1) Ultrasonic cleaners and welders ISOL Md Mounting torque (M6) 2.25-2.75/20-25Nm/lb.in. Advantages Terminal connection torque (M6) 4.50-5.50/40-48Nm/lb.in. (cid:1) High reliability circuit operation dS Creep distance on surface 12.7 mm (cid:1) Low voltage peaks for reduced dA Strike distance through air 9.6 mm protection circuits a Maximum allowable acceleration 50 m/s2 (cid:1) Low noise switching Weight 150 g (cid:1) Low losses Symbol Test Conditions Characteristic Values (per diode) Dimensions in mm (1 mm = 0.0394") typ. max. I T = 25(cid:1)C V = V 5 mA R TVJ = 25(cid:1)C VR = 0.R8R M• V 4 mA TVJ = 125(cid:1)C VR = 0.8 (cid:127)VRRM 160 mA VJ R RRM V I = 3 0 0 A; T =125(cid:1)C 0.84 V F F TVJ = 25(cid:1)C 1.10 V I = 5 2 0 A; TVJ =125(cid:1)C 1.08 V F TVJ = 25(cid:1)C 1.25 V VJ V For power-loss calculations only 0.52 V rT0 1.06 m(cid:4) T R DC current 0.114 K/W thJH R DC current 0.071 K/W thJC t I = 5 0 0 A T = 100(cid:1)C 150 200 ns Irr VF = 1 0 0 V TVJ = 25(cid:1)C 9 A RM - d R i / d t = 2 0 0 A/(cid:2)s TVJ = 100(cid:1)C 15 A VJ (cid:2) I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 1 IXYS reserves the right to change limits, test conditions and dimensions 1 9 © 2000 IXYS All rights reserved 1 - 2

MEO 550-02 DA 800 3.0 60 7A00 mC TVRV J== 110000V°C A TVVRJ == 110000°VC 2.5 50 IF600 Qr 2.0 IIIFF=== 1521570050AAA IRM40 IIF== 1515000AA 500 F F I= 275A F T =125°C 400 VJ 1.5 30 T = 25°C VJ 300 1.0 20 200 0.5 10 100 0 0.0 0 0.0 0.5 1.0 V 1.5 100 A/ms 1000 0 200 400 600 A8/0m0s 1000 V -di/dt -di/dt F F F Fig. 1 Forward current I versus Fig. 2 Typ. reverse recovery Fig. 3 Typ. peak reverse current I F RM max. voltage drop V per leg charge Q versus -di /dt versus -di /dt F r F F 2.0 220 60 6 T = 100°C T = 100°C ns VVJ= 100V IV J = 550A µs R F 200 V 5 V V 1.5 t FR FR t rr fr Kf 180 40 4 t fr 1.0 160 3 I I=1100A RM F I= 550A F 140 I= 275A 20 2 F 0.5 Q r 120 1 0.0 100 0 0 0 40 80 120 °C 160 0 200 400 600 A8/0m0s 1000 0 200 400 600 A80/m0s 1000 T -di/dt di/dt VJ F F Fig. 4 Dynamic parameters Q, I Fig. 5 Typ. recovery time t Fig. 6 Typ. peak forward voltage V r RM rr FR versus junction temperature T versus -di /dt and t versus di /dt VJ F fr F 1 Constants for Z calculation: thJS K/W i R (K/W) t (s) thi i 1 0.001 0.08 0.1 2 0.004 0.024 ZZ 3 0.027 0.112 tthhJJHS 4 0.082 0.464 0.01 MEO 550-02 0.001 0.001 0.01 0.1 1 s 10 t Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 2 - 2

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