Fast Recovery MEO 450-12 DA V = 1200 V RRM Epitaxial Diode I = 453 A FAVM t = 450 ns (FRED) Module rr Preliminary data 3 3 1 V V Type 1 RSM RRM V V 1200 1200 MEO 450-12DA Symbol Test Conditions Maximum Ratings I T =75(cid:1)C 640 A Features IFRMS(cid:255)(cid:255)(cid:2) TC =75(cid:1)C; rectangular, d = 0.5 453 A (cid:1) International standard package IFAVM tC < 10 (cid:2)s; rep. rating, pulse width limited by T 2460 A with DCB ceramic base plate FRM P VJM I T = 45(cid:1)C; t = 10 ms (50 Hz), sine 4800 A (cid:1) Planar passivated chips FSM VJ t = 8.3 ms(60 Hz), sine 5280 A (cid:1) Short recovery time T = 150(cid:1)C; t = 10 ms (50 Hz), sine 4320 A (cid:1) Low switching losses VJ t = 8.3 ms(60 Hz), sine 4750 A (cid:1) Soft recovery behaviour I2t T = 45(cid:1)C; t = 10 ms (50 Hz), sine 115200 A2s (cid:1) Isolation voltage 3600 V~ VJ t = 8.3 ms(60 Hz), sine 117100 A2s (cid:1) UL registered E 72873 T = 150(cid:1)C; t = 10 ms (50 Hz), sine 93300 A2s Applications VJ t = 8.3 ms(60 Hz), sine 94800 A2s (cid:1) Antiparallel diode for high frequency T -40...+150 (cid:1)C switching devices TTVsStJmgax -40...+112105 (cid:1)(cid:1)CC (cid:1) Fanrede m wohtoere lcinogn tdroiol dceir cinu ictsonverters P T = 25(cid:1)C 1750 W (cid:1) Inductive heating and melting tot C V 50/60 Hz, RMS t = 1 min 3000 V~ (cid:1) Uninterruptible power supplies (UPS) ISOL I (cid:3) 1 mA t = 1 s 3600 V~ (cid:1) Ultrasonic cleaners and welders ISOL M Mounting torque (M6) 2.25-2.75/20-25Nm/lb.in. d Advantages Terminal connection torque (M6) 4.50-5.50/40-48Nm/lb.in. (cid:1) High reliability circuit operation dS Creeping distance on surface 12.7 mm (cid:1) Low voltage peaks for reduced dA Strike distance through air 9.6 mm protection circuits a Maximum allowable acceleration 50 m/s2 (cid:1) Low noise switching Weight 150 g (cid:1) Low losses Symbol Test Conditions Characteristic Values (per diode) typ. max. Dimensions in mm (1 mm = 0.0394") I T = 25(cid:1)C V = V 24 mA R TVJ = 25(cid:1)C VR = 0.R8R M• V 6 mA TVJ = 125(cid:1)C VR = 0.8 (cid:127)VRRM 120 mA VJ R RRM V I = 3 0 0 A; T =125(cid:1)C 1.51 V F F TVJ = 25(cid:1)C 1.78 V I = 5 2 0 A; TVJ =125(cid:1)C 1.76 V F TVJ = 25(cid:1)C 1.96 V VJ V For power-loss calculations only 1.16 V rT0 1.15 m(cid:4) T R DC current 0.114 K/W thJH R DC current 0.071 K/W thJC t I = 600 A T = 100(cid:1)C 450 500 ns Irr VF = 600 V TVJ = 25(cid:1)C 110 A RM -dRi/dt = 8 0 0 A/(cid:2)s TVJ = 100(cid:1)C 165 A VJ (cid:2) I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 9 IXYS reserves the right to change limits, test conditions and dimensions 4 7 © 2000 IXYS All rights reserved 1 - 2

MEO 450-12 DA 800 120 200 7A00 µC TVVRJ == 160000°VC 18A0 TVVJ== 160000°VC 100 R IF600 Qr 80 IF=600A max. IRM114600 I=600A max. 500 I=600A F F 120 I=600A I=450A F F I=450A 400 60 I=225A 100 F F I=225A typ. F 80 300 TVJ=125°C 40 typ. 60 200 TVJ=25°C 20 40 100 20 0 0 0 0.0 0.5 1.0 1.5 2.0 V2.5 100 A/ms 1000 0 200 400 600 A8/0m0s 1000 V -di/dt -di/dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di / dt versus -di / dt F F 1.4 2000 100 2.5 T = 100°C VA T = 125°C µnCs VVJ= 600V 90 IV J = 520A µs 1.2 R F K 1600 80 2.0 f1.0 trr max. I=600A VFR70 VFR tfr F t 0.8 IRM 1200 IIF==640500AA 60 fr 1.5 F I=225A 50 F 0.6 Q 800 40 1.0 r 0.4 30 400 typ. 20 0.5 0.2 10 0.0 0 0 0.0 0 40 80 120 °C 160 0 200 400 600 A8/0m0s 1000 0 400 800 1200A/ms T -di/dt -di/dt VJ F F Fig. 4 Dynamic parameters Q, I Fig. 5 Recovery time t versus -di / dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di / dt VJ F 0.14 Constants for Z calculation: K/W thJS 0.12 i R (K/W) t (s) thi i 0.10 1 0.001 0.08 ZZ 2 0.004 0.024 tthhJJSH 0.08 3 0.027 0.112 4 0.082 0.464 0.06 0.04 0.02 0.00 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case © 2000 IXYS All rights reserved 2 - 2

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