Fast Recovery MEA 75-12 DA V = 1200 V RRM Epitaxial Diode MEK 75-12 DA I = 75 A FAV MEE 75-12 DA t = 250 ns (FRED) Module rr Preliminary data TO-240 AA 3 2 V V Type 1 RSM RRM V V MEA75-12 DA MEK 75-12 DA MEE 75-12 DA 1200 1200 1 2 3 1 2 3 1 2 3 Symbol Test Conditions Maximum Ratings Features I T =75 °C 107 A IFRMS Tcase=75 °C; rectangular, d = 0.5 75 A (cid:1) International standard package IFAV tc a<se 10 µs; rep. rating, pulse width limited by T TBD A with DCB ceramic base plate FRM P VJM (cid:1) Planar passivated chips I T = 45°C; t = 10 ms (50 Hz), sine 1200 A FSM VJ (cid:1) Short recovery time t = 8.3 ms(60 Hz), sine 1300 A (cid:1) Low switching losses TVJ = 150°C; t = 10 ms (50 Hz), sine 1080 A (cid:1) Soft recovery behaviour t = 8.3 ms(60 Hz), sine 1170 A (cid:1) Isolation voltage 3600 V~ I2t TVJ = 45°C; t = 10 ms (50 Hz), sine 7200 A2s (cid:1) UL registered E 72873 t = 8.3 ms(60 Hz), sine 7100 A2s T = 150°C; t = 10 ms (50 Hz), sine 5800 A2s Applications VJ t = 8.3 ms(60 Hz), sine 5700 A2s (cid:1) Antiparallel diode for high frequency switching devices T -40...+150 °C TVJ -40...+125 °C (cid:1) Free wheeling diode in converters Tstg 110 °C and motor control circuits Hmax P T = 25°C 280 W (cid:1) Inductive heating and melting tot case (cid:1) Uninterruptible power supplies (UPS) VISOL 50/60 Hz, RMS t = 1 min 3000 V~ (cid:1) Ultrasonic cleaners and welders I ≤ 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2.50-4/22-35Nm/lb.in. Advantages d Terminal connection torque (M5) 2.50-4/22-35Nm/lb.in. (cid:1) High reliability circuit operation d Creep distance on surface 12.7 mm (cid:1) Low voltage peaks for reduced S d Strike distance through air 9.6 mm protection circuits A a Maximum allowable acceleration 50 m/s2 (cid:1) Low noise switching Weight 90 g (cid:1) Low losses Symbol Test Conditions Characteristic Values (per diode) typ. max. Dimensions in mm (1 mm = 0.0394") I T = 25°C V = V 2 mA R VJ R RRM T = 25°C V = 0.8 • V 0.5 mA VJ R RRM T = 125°C V = 0.8 • V 34 mA VJ R RRM V I = 1 0 0 A; T =125°C 1.85 V F F VJ T = 25°C 2.17 V VJ I = 3 0 0 A; T =125°C 2.58 V F VJ T = 25°C 2.64 V VJ V For power-loss calculations only 1.48 V T0 r 3.65 mΩ T R DC current 0.550 K/W thJH R DC current 0.450 K/W thJC t I = 1 5 0 A T = 100°C 250 300 ns rr F VJ I V = 6 0 0 V T = 25°C 22 A RM R VJ -di/dt = 2 0 0 A/µs T = 100°C 33 A VJ Data according to IEC 60747 5 IXYS reserves the right to change limits, test conditions and dimensions 1 0 © 2000 IXYS All rights reserved D6 - 5

MEA 75-12 DA MEE 75-12 DA MEK 75-12 DA 200 10 100 A µC TVVJ== 1 60000°VC A TVVJ== 1 60000°VC 175 R R I= 150A 8 F 80 150 Q I= 100A I IF T =125°C r IFF= 70A RM I= 150A 125 TVJ= 25°C 6 60 IF= 100A VJ IF= 70A 100 F 4 40 75 50 2 20 25 0 0 0 0 1 2 V 3 10 100 A/µs 1000 0 200 400 600 A8/0µ0s 1000 V -di/dt -di/dt F F F Fig. 1 Forward current I versus Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F r RM voltage drop V per leg versus -di /dt versus -di /dt F F F 1.4 350 100 2.0 T = 100°C ns VVRJ = 600V A V µs FR 1.2 80 1.6 Kf trr 300 VFR tfr tfr 1.0 60 1.2 I= 150A F 250 I= 100A F I I= 70A 0.8 RM F 40 0.8 Q r 200 0.6 20 0.4 T = 100°C VJ I = 150A F 0.4 150 0 0.0 0 50 100 °C 150 0 200 400 600 A8/0µ0s 1000 0 200 400 600 800 1A0/0µ0s T -di/dt di/dt VJ F F Fig. 4 Dynamic parameters Q, I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus junction temperature T versus di /dt VJ F 0.6 K/W 0.5 0.4 Z thJH Constants for Z calculation: 0.3 thJH i R (K/W) t (s) 0.2 thi i 1 0.037 0.002 2 0.138 0.134 0.1 3 0.093 0.25 4 0.282 0.274 75-12 DA 0.0 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to heatsink 6 1 0 D6 - 6 © 2000 IXYS All rights reserved

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