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  • 型号: MEE250-12DA
  • 制造商: IXYS
  • 库位|库存: xxxx|xxxx
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MEE250-12DA产品简介:

ICGOO电子元器件商城为您提供MEE250-12DA由IXYS设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MEE250-12DA价格参考。IXYSMEE250-12DA封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 Pair Series Connection Standard 1200V 260A Chassis Mount Y4-M6。您可以下载MEE250-12DA参考资料、Datasheet数据手册功能说明书,资料中有MEE250-12DA 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE FAST REC PHASE 1200V Y4-M6

产品分类

二极管,整流器 - 模块

品牌

IXYS

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

MEE250-12DA

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

FRED

不同If时的电压-正向(Vf)

1.8V @ 260A

不同 Vr时的电流-反向漏电流

12mA @ 1200V

二极管类型

标准

二极管配置

1 对串联

供应商器件封装

Y4-M6

其它名称

MEE25012DA

包装

散装

反向恢复时间(trr)

500ns

安装类型

底座安装

封装/外壳

Y4-M6

标准包装

6

热阻

*

电压-DC反向(Vr)(最大值)

1200V(1.2kV)

电流-平均整流(Io)(每二极管)

260A

速度

快速恢复 =< 500 ns,> 200mA(Io)

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PDF Datasheet 数据手册内容提取

Fast Recovery MEA 250-12 DA V = 1200 V RRM Epitaxial Diode MEK 250-12 DA I = 260 A FAVM MEE 250-12 DA t = 450 ns (FRED) Module rr Preliminary data 3 2 V V Type 1 RSM RRM V V MEA 250-12DA MEK 250-12DA MEE 250-012DA 1200 1200 1 2 3 1 2 3 1 2 3 Symbol Test Conditions Maximum Ratings I T =75(cid:1)C 367 A Features IFRMS(cid:255)(cid:255)(cid:1) TC =75(cid:1)C; rectangular, d = 0.5 260 A (cid:2) International standard package IFAVM tC < 10 (cid:2)s; rep. rating, pulse width limited by T 1480 A with DCB ceramic base plate FRM P VJM I T = 45(cid:1)C; t = 10 ms (50 Hz), sine 2400 A (cid:2) Planar passivated chips FSM VJ t = 8.3 ms(60 Hz), sine 2640 A (cid:2) Short recovery time T = 150(cid:1)C; t = 10 ms (50 Hz), sine 2160 A (cid:2) Low switching losses VJ t = 8.3 ms(60 Hz), sine 2380 A (cid:2) Soft recovery behaviour (cid:2) Isolation voltage 3600 V~ I2t T = 45(cid:1)C; t = 10 ms (50 Hz), sine 28800 A2s VJ (cid:2) UL registered E 72873 t = 8.3 ms(60 Hz), sine 29300 A2s T = 150(cid:1)C; t = 10 ms (50 Hz), sine 23300 A2s Applications VJ t = 8.3 ms(60 Hz), sine 23800 A2s (cid:2) Antiparallel diode for high frequency T -40...+150 (cid:1)C switching devices TVJ -40...+125 (cid:1)C (cid:2) Free wheeling diode in converters Tstg 110 (cid:1)C and motor control circuits Smax P T = 25(cid:1)C 875 W (cid:2) Inductive heating and melting tot c (cid:2) Uninterruptible power supplies (UPS) V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I (cid:3) 1 mA t = 1 s 3600 V~ (cid:2) Ultrasonic cleaners and welders ISOL M Mounting torque (M6) 2.25-2.75/20-25Nm/lb.in. Advantages d Terminal connection torque (M6) 4.50-5.50/40-48Nm/lb.in. (cid:2) High reliability circuit operation d Creeping distance on surface 12.7 mm (cid:2) Low voltage peaks for reduced S d Strike distance through air 9.6 mm protection circuits A a Maximum allowable acceleration 50 m/s2 (cid:2) Low noise switching Weight 150 g (cid:2) Low losses Symbol Test Conditions Characteristic Values (per diode) typ. max. Dimensions in mm (1 mm = 0.0394") I T = 25(cid:1)C V = V 12 mA R TVJ = 25(cid:1)C VR = 0.R8R M• V 3 mA TVJ = 125(cid:1)C VR = 0.8 (cid:127)VRRM 60 mA VJ R RRM V I = 1 5 0 A; T =125(cid:1)C 1.38 V F F TVJ = 25(cid:1)C 1.69 V I = 2 6 0 A; TVJ =125(cid:1)C 1.54 V F TVJ = 25(cid:1)C 1.80 V VJ V For power-loss calculations only 1.16 V rT0 1.46 m(cid:4) T R DC current 0.228 K/W thJH R DC current 0.143 K/W thJC t I = 3 0 0 A T = 100(cid:1)C 450 500 ns Irr VF = 6 0 0 V TVJ = 25(cid:1)C 55 A R M -di/dtR = 4 0 0 A/(cid:2)s TVJ = 100(cid:1)C 83 A VJ (cid:1) I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 9 IXYS reserves the right to change limits, test conditions and dimensions 4 7 © 2000 IXYS All rights reserved 1 - 2

MEA 250-12 DA MEE 250-12 DA MEK 250-12 DA 500 80 200 A µC TVJ= 100°C A TVJ= 100°C 450 V = 600V 180 V = 600V 70 R R 400 160 IF350 Qr 60 IIF== 330000AA;; tmypa.x. IRM140 IIIFF=== 332005000AAA;;; mttyyppa..x. 300 50 IF= 250A; typ. 120 IF= 125A; typ. T =125°C IF= 125A; typ. F 250 VJ 40 F 100 T = 25°C VJ 200 80 30 150 60 20 100 40 10 50 20 0 0 0 0.0 0.5 1.0 1.5 2.0 V2.5 100 A/ms 1000 0 200 400 600 A8/0m0s 1000 V -di/dt -di/dt F F F Fig. 1 Forward current I versus Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F r RM voltage drop V per leg versus -di /dt versus -di /dt F F F 1.4 1200 100 2.5 T = 100°C VA T = 125°C ns VVJ= 600V 90 IV J = 260A µs R F 1.2 1000 K 80 2.0 f1.0 trr 800 IF= 300A; max. VFR70 tfr VFR tfr I= 300A; typ. F 60 1.5 I= 250A; typ. F 0.8 600 I= 125A; typ. 50 I F RM 40 1.0 0.6 400 Q 30 r 20 0.5 0.4 200 10 0.2 0 0 0.0 0 40 80 120 °C 160 0 200 400 600 A8/0m0s 1000 0 400 800 1200A/ms T -di/dt di/dt VJ F F Fig. 4 Dynamic parameters Q, I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus junction temperature T versus di /dt VJ F 0.25 Constants for Z calculation: thJS K/W i R (K/W) t (s) thi i 0.20 1 0.002 0.08 ZZ 2 0.008 0.024 tthhJJSH 3 0.054 0.112 0.15 4 0.164 0.464 0.10 0.05 0.00 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 2 - 2

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