MDA95-22N1B = High Voltage Standard Rectifier Module V 2200V RRM I =2x 120A FAV = V 1.13V F Common Anode Part number MDA95-22N1B Backside: isolated 3 1 2 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Diode for main rectification ● Isolation Voltage: 3 6 0 0 V~ ● Improved temperature and power cycling ● For single and three phase ● Industry standard outline ● Planar passivated chips bridge configurations ● RoHS compliant ● Very low forward voltage drop ● Supplies for DC power equipment ● Height: 30 mm ● Very low leakage current ● Input rectifiers for PWM inverter ● Base plate: DCB ceramic ● Battery DC power supplies ● Reduced weight ● Field supply for DC motors ● Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MDA95-22N1B Rectifier Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 2300 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 2200 V RRM VJ I reverse current V = 2 2 0 0 V T = 25°C 200 µA R R VJ V = 2 2 0 0 V T = 1 5 0 °C 15 mA R VJ V forward voltage drop I = 1 5 0 A T = 25°C 1.20 V F F VJ I = 3 0 0 A 1.43 V F I = 1 5 0 A T = 1 2 5 °C 1.13 V F VJ I = 3 0 0 A 1.46 V F I average forward current T = 1 0 0 °C T = 1 5 0 °C 120 A FAV C VJ I RMS forward current 180° sine 180 A F(RMS) V threshold voltage T = 1 5 0 °C 0.75 V F0 VJ for power loss calculation only r slope resistance 1.95 mΩ F R thermal resistance junction to case 0.26 K/W thJC R thermal resistance case to heatsink 0.20 K/W thCH P total power dissipation T = 25°C 481 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C 2.80 kA FSM VJ t = 8,3 ms; (60 Hz), sine V = 0 V 3.03 kA R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 2.38 kA VJ t = 8,3 ms; (60 Hz), sine V = 0 V 2.57 kA R I²t value for fusing t = 10 ms; (50 Hz), sine T = 45°C 39.2 kA²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 38.1 kA²s R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 28.3 kA²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 27.5 kA²s R C junction capacitance V = 4 0 0 V; f = 1 MHz T = 25°C 116 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MDA95-22N1B Package TO-240AA Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 200 A RMS T virtual junction temperature -40 150 °C VJ T operation temperature -40 125 °C op T storage temperature -40 125 °C stg Weight 76 g M mounting torque 2.5 4 Nm D M terminal torque 2.5 4 Nm T d terminal to terminal 13.0 9.7 mm Spp/App creepage distance on surface | striking distance through air d terminal to backside 16.0 16.0 mm Spb/Apb V isolation voltage t = 1 second 3600 V ISOL 50/60 Hz, RMS; II S O L ≤ 1 mA t = 1 minute 3000 V Date Code + Assembly Line Circuit yywwAA Part Number Data Matrix Lot.No: xxxxxx Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard MDA95-22N1B MDA95-22N1B Box 36 510571 Equivalent Circuits for Simulation * on die level T V J =150°C I V R Rectifier 0 0 V threshold voltage 0.75 V 0 max R slope resistance * 0.76 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MDA95-22N1B Outlines TO-240AA 3 1 2 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MDA95-22N1B Rectifier 3000 105 250 V = 0 V DC 50 Hz, 80% VRRM R 180° sin 2500 120° 200 60° 30° 2000 150 I2t I T = 45°C FSM VJ I 1500 TVJ = 45°C FAVM [A] [A2s] 100 [A] 1000 TVJ = 150°C TVJ = 150°C 50 500 0 104 0 10-3 10-2 10-1 100 101 1 2 3 6 8 10 0 50 100 150 200 t [s] t [ms] TC [°C] Fig. 1 Surge overload current Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current I , I : Crest value, t: duration at case temperature TSM FSM 200 R [K/W] thJA 0.4 0.6 150 0.8 1 P 1.2 T 100 [W] 1.5 2 DC 3 180° sin 50 120° 60° 30° 0 0 50 100 150 0 50 100 150 200 I , I [A] T [°C] TAVM FAVM A Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 800 R [K/W] thKA 0.1 0.15 600 0.2 R L 0.3 P tot 0.4 400 0.5 [W] 0.6 0.7 Circuit 200 B2 2x MDD95 0 0 50 100 150 200 250 0 50 100 150 200 I [A] T [°C] dAVM A Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature; R = resistive load,L = inductive load IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MDA95-22N1B Rectifier 1000 R [KW] thJA 0.03 800 0.06 0.08 0.12 P 600 tot 0.15 0.3 [W] 400 0.5 Circuit B6 3x MDD95 200 0 0 100 200 300 0 50 100 150 200 I [A] T [°C] DAVM A Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.4 R for various conduction angles d: thJC 30° d R [K/W] thJC 60° DC 0.26 120° 0.3 180° 0.28 180° 120° 0.30 DC Z thJC 60° 0.34 0.2 30° 0.38 [K/W] Constants for Z calculation: thJC i R [K/W] t [s] 0.1 thi i 1 0.013 0.0012 2 0.072 0.0470 3 0.175 0.3940 0 10-3 10-2 10-1 100 101 102 103 t [s] Fig. 7 Transient thermal impedance junction to case (per diode) 0.6 R for various conduction angles d: thJK d R [K/W] 30° thJK DC 0.46 0.5 60° 180° 0.48 120° 180° 120° 0.50 0.4 DC 60° 0.54 Z thJK 30° 0.58 0.3 [K/W] Constants for Z calculation: thJK 0.2 i R [K/W] t [s] thi i 1 0.013 0.0012 2 0.072 0.0470 0.1 3 0.175 0.3940 4 0.200 1.3200 0 10-3 10-2 10-1 100 101 102 103 104 t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

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