MCP73826 Single Cell Lithium-Ion Charge Management Controller Features Description • Linear Charge Management Controller for Single The MCP73826 is a linear charge management con- Lithium-Ion Cells troller for use in space-limited, cost sensitive applica- • High Accuracy Preset Voltage Regulation: tions. The MCP73826 combines high accuracy +1%(max) constant voltage, controlled current regulation, and cell preconditioning in a space saving 6-pin SOT-23A pack- • Two Preset Voltage Regulation Options: age. The MCP73826 provides a stand-alone charge - 4.1V - MCP73826-4.1 management solution. - 4.2V - MCP73826-4.2 The MCP73826 charges the battery in three phases: • Programmable Charge Current preconditioning, controlled current, and constant volt- • Automatic Cell Preconditioning of Deeply age. If the battery voltage is below the internal low-volt- Depleted Cells, Minimizing Heat Dissipation Dur- age threshold, the battery is preconditioned with a ing Initial Charge Cycle foldback current. The preconditioning phase protects • Automatic Power-Down when Input Power the lithium-ion cell and minimizes heat dissipation. Removed Following the preconditioning phase, the MCP73826 • Temperature Range: -20°C to +85°C enters the controlled current phase. The MCP73826 • Packaging: 6-Pin SOT-23A allows for design flexibility with a programmable charge current set by an external sense resistor. The charge Applications current is ramped up, based on the cell voltage, from the foldback current to the peak charge current estab- • Single Cell Lithium-Ion Battery Chargers lished by the sense resistor. This phase is maintained • Personal Data Assistants until the battery reaches the charge-regulation voltage. • Cellular Telephones Then, the MCP73826 enters the final phase, constant • Hand Held Instruments voltage. The accuracy of the voltage regulation is better • Cradle Chargers than ±1% over the entire operating temperature range • Digital Cameras and supply voltage range. The MCP73826-4.1 is preset to a regulation voltage of 4.1V, while the MCP73826- Typical Application Circuit 4.2 is preset to 4.2V. The MCP73826 operates with an input voltage range 500mA Lithium-Ion Battery Charger from 4.5V to 5.5V. The MCP73826 is fully specified MA2Q705 100m NDS8434 over the ambient temperature range of -20°C to +85°C. V IN 5V +Single Package Type 10µF Lithium-Ion 6 4 - Cell VSNS VDRV 6-Pin SOT-23A 5 3 V V IN BAT 100k 1 2 10µF SHDN GND SHDN 1 6 VSNS MCP73826 GND 2 MCP73826 5 VIN VBAT 3 4 VDRV  2002-2013 Microchip Technology Inc. DS21705B-page 1

MCP73826 Functional Block Diagram DRV BAT ND V V G 1) kE 5T 352.(NO 75k 75k F RE L V O R TR + – NE OFI E CPLI GM AA T L O V N VI T ER RENLIFI RP UM CA GE OL + – ARNTR HO CC  k 0 0 5 P M  A k CL 1 2 RGE RENT LIFIER 12 V(1.2V)REF VIN 0.3V URRENT AMPLIFIER MCP73826-4. MCP73826-4. CHACURAMP WN,NCETOR GE CACK for  for  – + DORERA + – ARDB 5K 5K HUTEFEENE CHFOL 340. 352. SRG = = 1.1k VREF 112.5k 37.5k NOTE 1: Value Value N S N VI VSN HD S DS21705B-page 2  2002-2013 Microchip Technology Inc.

MCP73826 1.0 ELECTRICAL PIN FUNCTION TABLE CHARACTERISTICS Pin Name Description 1.1 Maximum Ratings* 1 SHDN Logic Shutdown VIN ...................................................................................-0.3V to 6.0V 2 GND Battery Management 0V Reference All inputs and outputs w.r.t. GND................-0.3 to (V +0.3)V IN Current at VDRV..........................................................+/-1mA 3 VBAT Cell Voltage Monitor Input Maximum Junction Temperature, TJ..............................150°C 4 VDRV Drive Output Storage temperature.....................................-65°C to +150°C 5 V Battery Management IN ESD protection on all pins4kV Input Supply *Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and 6 VSNS Charge Current Sense Input functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended peri- ods may affect device reliability. DC CHARACTERISTICS: MCP73826-4.1, MCP73826-4.2 Unless otherwise specified, all limits apply for V = [V (typ)+1V], R = 500mT = -20°C to +85°C. IN REG SENSE A Typical values are at +25°C. Refer to Figure1-1 for test circuit. Parameter Sym Min Typ Max Units Conditions Supply Voltage V 4.5 — 5.5 V IN Supply Current I — 0.5 15 µA Shutdown, V = 0V IN SHDN — 260 560 Constant Voltage Mode Voltage Regulation (Constant Voltage Mode) Regulated Output Voltage V 4.059 4.1 4.141 V MCP73826-4.1 only REG 4.158 4.2 4.242 V MCP73826-4.2 only Line Regulation V -10 — 10 mV V = 4.5V to 5.5V, BAT IN I = 75mA OUT Load Regulation V -1 +0.2 1 mV I = 10mA to 75mA BAT OUT Output Reverse Leakage Current I — 8 — µA V =Floating, V =V LK IN BAT REG External MOSFET Gate Drive Gate Drive Current I — — 1 mA Sink, CV Mode DRV 0.08 — — mA Source, CV Mode Gate Drive Minimum Voltage V — 1.6 — V DRV Current Regulation (Controlled Current Mode) Current Sense Gain A — 100 — dB (V -V ) / V CS SNS DRV BAT Current Limit Threshold V 40 53 75 mV (V -V ) at I CS IN SNS OUT Foldback Current Scale Factor K — 0.43 — A/A Shutdown Input - SHDN Input High Voltage Level V 40 — — %V IH IN Input Low Voltage Level V — — 25 %V IL IN Input Leakage Current I — — 1 µA V = 0V to 5.5V LK SHDN TEMPERATURE SPECIFICATIONS Unless otherwise specified, all limits apply for V = 4.5V-5.5V IN Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range T -20 — +85 °C A Operating Temperature Range T -40 — +125 °C A Storage Temperature Range T -65 — +150 °C A Thermal Package Resistances 4-Layer JC51-7 Standard Thermal Resistance, 6-Pin SOT-23A  — 230 — °C/W JA Board, Natural Convection  2002-2013 Microchip Technology Inc. DS21705B-page 3

MCP73826 V = 5.1V (MCPIN73826-4.1) RSENSE NDS8434 IOUT V = 5.2V IN (MCP73826-4.2) 22µF V 6 4 OUT V V SNS DRV 5 3 V V IN BAT 100k 22µF 1 2 SHDN GND MCP73826 FIGURE 1-1: MCP73826 Test Circuit. DS21705B-page 4  2002-2013 Microchip Technology Inc.

MCP73826 2.0 TYPICAL PERFORMANCE CHARACTERISTICS Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, I = 10mA, Constant Voltage Mode, T = 25°C. Refer to Figure1-1 for test circuit. OUT A FIGURE 2-1: Output Voltage vs. Output Current FIGURE 2-4: Supply Current vs. Output Current. (MCP73826-4.2). FIGURE 2-2: Output Voltage vs. Input Voltage FIGURE 2-5: Supply Current vs. Input Voltage. (MCP73826-4.2). FIGURE 2-3: Output Voltage vs. Input Voltage FIGURE 2-6: Supply Current vs. Input Voltage. (MCP73826-4.2).  2002-2013 Microchip Technology Inc. DS21705B-page 5

MCP73826 Note: Unless otherwise indicated, I = 10mA, Constant Voltage Mode, T = 25°C. Refer to Figure1-1 for test circuit. OUT A FIGURE 2-7: Output Reverse Leakage Current vs. FIGURE 2-10: Supply Current vs. Temperature. Output Voltage. FIGURE 2-8: Output Reverse Leakage Current vs. FIGURE 2-11: Output Voltage vs. Temperature Output Voltage. (MCP73826-4.2). FIGURE 2-9: Current Limit Foldback. FIGURE 2-12: Power-Up / Power-Down. DS21705B-page 6  2002-2013 Microchip Technology Inc.

MCP73826 Note: Unless otherwise indicated, I = 10mA, Constant Voltage Mode, T = 25°C. Refer to Figure1-1 for test circuit. OUT A FIGURE 2-13: Line Transient Response. FIGURE 2-15: Load Transient Response. FIGURE 2-14: Line Transient Response. FIGURE 2-16: Load Transient Response.  2002-2013 Microchip Technology Inc. DS21705B-page 7

MCP73826 3.0 PIN DESCRIPTION 3.4 Drive Output (VDRV) The descriptions of the pins are listed in Table3-1. Direct output drive of an external P-channel MOSFET pass transistor for current and voltage regulation. Pin Name Description 3.5 Battery Management Input Supply 1 SHDN Logic Shutdown (VIN) 2 GND Battery Management 0V Reference A supply voltage of 4.5V to 5.5V is recommended. Bypass to GND with a minimum of 10µF. 3 V Cell Voltage Monitor Input BAT 4 V Drive Output 3.6 Charge Current Sense Input (VSNS) DRV 5 V Battery Management Charge current is sensed via the voltage developed IN Input Supply across an external precision sense resistor. The sense resistor must be placed between the supply voltage 6 V Charge Current Sense Input SNS (V ) and the source of the external pass transistor. A IN TABLE 3-1: Pin Function Table. 50m sense resistor produces a fast charge current of 1A, typically. 3.1 Logic Shutdown (SHDN) Input to force charge termination, initiate charge, or ini- tiate recharge. 3.2 Battery Management 0V Reference (GND) Connect to negative terminal of battery. 3.3 Cell Voltage Monitor Input (VBAT) Voltage sense input. Connect to positive terminal of battery. Bypass to GND with a minimum of 10µF to ensure loop stability when the battery is disconnected. A precision internal resistor divider regulates the final voltage on this pin to V . REG DS21705B-page 8  2002-2013 Microchip Technology Inc.

MCP73826 4.0 DEVICE OVERVIEW 4.3 Constant Voltage Regulation The MCP73826 is a linear charge management con- When the cell voltage reaches the regulation voltage, troller. Refer to the functional block diagram on page 2 V , constant voltage regulation begins. The REG and the typical application circuit, Figure6-1. MCP73826 monitors the cell voltage at the V pin. BAT This input is tied directly to the positive terminal of the 4.1 Charge Qualification and battery. The MCP73826 is offered in two fixed-voltage Preconditioning versions for battery packs with either coke or graphite anodes: 4.1V (MCP73826-4.1) and 4.2V Upon insertion of a battery or application of an external (MCP73826-4.2). supply, the MCP73826 verifies the state of the SHDN pin. The SHDN pin must be above the logic high level. 4.4 Charge Cycle Completion If the SHDN pin is above the logic high level, the MCP73826 initiates a charge cycle. If the cell is below The charge cycle can be terminated by a host micro- the preconditioning threshold, 2.4V typically, the controller after an elapsed time from the start of the MCP73826 preconditions the cell with a scaled back charge cycle. The charge is terminated by pulling the current. The preconditioning current is set to approxi- shutdown pin, SHDN, to a logic Low level. mately 43% of the fast charge peak current. The pre- conditioning safely replenishes deeply depleted cells and minimizes heat dissipation in the external pass transistor during the initial charge cycle. 4.2 Controlled Current Regulation - Fast Charge Preconditioning ends and fast charging begins when the cell voltage exceeds the preconditioning threshold. Fast charge utilizes a foldback current scheme based on the voltage at the V input developed by the drop SNS across an external sense resistor, R , and the out- SENSE put voltage, V . Fast charge continues until the cell BAT voltage reaches the regulation voltage, V . REG  2002-2013 Microchip Technology Inc. DS21705B-page 9

MCP73826 5.0 DETAILED DESCRIPTION 5.2 Digital Circuitry Refer to the typical application circuit, Figure6-1. 5.2.1 SHUTDOWN INPUT (SHDN) 5.1 Analog Circuitry The shutdown input pin, SHDN, can be used to termi- nate a charge anytime during the charge cycle, initiate 5.1.1 OUTPUT VOLTAGE INPUT (V ) BAT a charge cycle, or initiate a recharge cycle. The MCP73826 monitors the cell voltage at the V Applying a logic High input signal to the SHDN pin, or BAT pin. This input is tied directly to the positive terminal of tying it to the input source, enables the device. Apply- the battery. The MCP73826 is offered in two fixed-volt- ing a logic Low input signal disables the device and ter- age versions for single cells with either coke or graphite minates a charge cycle. In shutdown mode, the anodes: 4.1V (MCP73826-4.1) and 4.2V device’s supply current is reduced to 0.5µA, typically. (MCP73826-4.2). 5.1.2 GATE DRIVE OUTPUT (V ) DRV The MCP73826 controls the gate drive to an external P-channel MOSFET, Q1. The P-channel MOSFET is controlled in the linear region, regulating current and voltage supplied to the cell. The drive output is auto- matically turned off when the input supply falls below the voltage sensed on the V input. BAT 5.1.3 SUPPLY VOLTAGE (V ) IN The V input is the input supply to the MCP73826. The IN MCP73826 automatically enters a power-down mode if the voltage on the V input falls below the voltage on IN the V pin. This feature prevents draining the battery BAT pack when the V supply is not present. IN 5.1.4 CURRENT SENSE INPUT (V ) SNS Fast charge current regulation is maintained by the voltage drop developed across an external sense resis- tor, R , applied to the V input pin. The follow- SENSE SNS ing formula calculates the value for R : SENSE V R = ------C---S--- SENSE I OUT Where: V is the current limit threshold CS I is the desired peak fast charge current in OUT amps. The preconditioning current is scaled to approximately 43% of I . OUT DS21705B-page 10  2002-2013 Microchip Technology Inc.

MCP73826 6.0 APPLICATIONS algorithm for Lithium-Ion cells, controlled current fol- lowed by constant voltage. Figure6-1 depicts a typical The MCP73826 is designed to operate in conjunction stand-alone application circuit and Figure6-2 depicts with a host microcontroller or in stand-alone applica- the accompanying charge profile. tions. The MCP73826 provides the preferred charge VOLTAGE REGULATED WALL CUBE Q 1 MA2Q705 R NDS8434 IOUT SENSE PACK+ 100m 22k 10µF 10µF SHDN 1 6 VSNS GND 2 MCP73826 5 VIN + - VBAT VDRV 3 4 100k PACK- SINGLE CELL LITHIUM-ION BATTERY PACK FIGURE 6-1: Typical Application Circuit. PRECONDITIONING CONTROLLED CURRENT CONSTANT VOLTAGE PHASE PHASE PHASE REGULATION VOLTAGE (VREG) CHARGE VOLTAGE REGULATION CURRENT (IOUT(PEAK)) TRANSITION THRESHOLD PRECONDITION CURRENT CHARGE CURRENT FIGURE 6-2: Typical Charge Profile.  2002-2013 Microchip Technology Inc. DS21705B-page 11

MCP73826 6.1 Application Circuit Design 6.1.1.2 EXTERNAL PASS TRANSISTOR Due to the low efficiency of linear charging, the most The external P-channel MOSFET is determined by the important factors are thermal design and cost, which gate to source threshold voltage, input voltage, output are a direct function of the input voltage, output current voltage, and peak fast charge current. The selected P- and thermal impedance between the external P-chan- channel MOSFET must satisfy the thermal and electri- nel pass transistor, Q1, and the ambient cooling air. cal design requirements. The worst-case situation is when the output is shorted. Thermal Considerations In this situation, the P-channel pass transistor has to dissipate the maximum power. A trade-off must be The worst case power dissipation in the external pass made between the charge current, cost and thermal transistor occurs when the input voltage is at the maxi- requirements of the charger. mum and the output is shorted. In this case, the power dissipation is: 6.1.1 COMPONENT SELECTION Selection of the external components in Figure6-1 is PowerDissipation = V I K INMAX OUT crucial to the integrity and reliability of the charging sys- tem. The following discussion is intended as a guide for Where: the component selection process. V is the maximum input voltage INMAX 6.1.1.1 SENSE RESISTOR I is the maximum peak fast charge current OUT The preferred fast charge current for Lithium-Ion cells K is the foldback current scale factor is at the 1C rate with an absolute maximum current at Power dissipation with a 5V, +/-10% input voltage the 2C rate. For example, a 500mAH battery pack has source, 100m, 1% sense resistor, and a scale factor a preferred fast charge current of 500mA. Charging at of 0.43 is: this rate provides the shortest charge cycle times with- out degradation to the battery pack performance or life. The current sense resistor, R , is calculated by: PowerDissipation = 5.5V758mA0.43 = 1.8W SENSE V R = ------C---S--- Utilizing a Fairchild NDS8434 or an International Recti- SENSE IOUT fier IRF7404 mounted on a 1in2 pad of 2oz. copper, the junction temperature rise is 90°C, approximately. This Where: would allow for a maximum operating ambient temper- V is the current limit threshold voltage ature of 60°C. CS I is the desired peak fast charge current By increasing the size of the copper pad, a higher ambi- OUT ent temperature can be realized or a lower value sense For the 500mAH battery pack example, a standard resistor could be utilized. value 100m, 1% resistor provides a typical peak fast charge current of 530mA and a maximum peak fast Alternatively, different package options can be utilized charge current of 758mA. Worst case power dissipa- for more or less power dissipation. Again, design trade- tion in the sense resistor is: offs should be considered to minimize size while main- taining the desired performance. Electrical Considerations 2 PowerDissipation = 100m758mA = 57.5mW The gate to source threshold voltage and R of the DSON external P-channel MOSFET must be considered in the A Panasonic ERJ-L1WKF100U 100m, 1%, 1W design phase. resistor is more than sufficient for this application. The worst case, V provided by the controller occurs A larger value sense resistor will decrease the peak GS when the input voltage is at the minimum and the fast charge current and power dissipation in both the charge current is at the maximum. The worst case, V sense resistor and external pass transistor, but will GS is: increase charge cycle times. Design trade-offs must be considered to minimize space while maintaining the desired performance. V = V –V –I R  GS DRVMAX INMIN OUT SENSE Where: V is the maximum sink voltage at the V DRVMAX DRV output DS21705B-page 12  2002-2013 Microchip Technology Inc.

MCP73826 V is the minimum input voltage source If a reverse protection diode is incorporated in the INMIN design, it should be chosen to handle the peak fast I is the maximum peak fast charge current OUT charge current continuously at the maximum ambient R is the sense resistor SENSE temperature. In addition, the reverse leakage current of Worst case, V with a 5V, +/-10% input voltage the diode should be kept as small as possible. GS source, 100m, 1% sense resistor, and a maximum 6.1.1.5 SHUTDOWN INTERFACE sink voltage of 1.6V is: In the stand-alone configuration, the shutdown pin is generally tied to the input voltage. The MCP73826 will V = 1.6V–4.5V–758mA99m = –2.8V GS automatically enter a low power mode when the input voltage is less than the output voltage reducing the bat- At this worst case, VGS, the RDSON of the MOSFET tery drain current to 8µA, typically. must be low enough as to not impede the performance By connecting the shutdown pin as depicted in of the charging system. The maximum allowable Figure6-1, the battery drain current may be further R at the worst case V is: DSON GS reduced. In this application, the battery drain current becomes a function of the reverse leakage current of V –I R –V R = ----I--N----M----I--N-----------O----U----T-------------S--E----N---S---E------------B----A---T---M----A---X-- the reverse protection diode. DSON I OUT 6.2 PCB Layout Issues 4.5V–758mA99m–4.242V RDSON = --------------------------------7---5---8---m-----A---------------------------------- = 242m For optimum voltage regulation, place the battery pack as close as possible to the device’s V and GND pins. BAT It is recommended to minimize voltage drops along the The Fairchild NDS8434 and International Rectifier high current carrying PCB traces. IRF7404 both satisfy these requirements. If the PCB layout is used as a heatsink, adding many 6.1.1.3 EXTERNAL CAPACITORS vias around the external pass transistor can help con- duct more heat to the back-plane of the PCB, thus The MCP73826 is stable with or without a battery load. reducing the maximum junction temperature. In order to maintain good AC stability in the constant voltage mode, a minimum capacitance of 10µF is rec- ommended to bypass the V pin to GND. This capac- BAT itance provides compensation when there is no battery load. In addition, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during constant voltage mode. Therefore, the bypass capacitance may be nec- essary to compensate for the inductive nature of the battery pack. Virtually any good quality output filter capacitor can be used, independent of the capacitor’s minimum ESR (Effective Series Resistance) value. The actual value of the capacitor and its associated ESR depends on the forward trans conductance, g , and capacitance of the m external pass transistor. A 10µF tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for up to a 1A output current. 6.1.1.4 REVERSE BLOCKING PROTECTION The optional reverse blocking protection diode depicted in Figure6-1 provides protection from a faulted or shorted input or from a reversed polarity input source. Without the protection diode, a faulted or shorted input would discharge the battery pack through the body diode of the external pass transistor.  2002-2013 Microchip Technology Inc. DS21705B-page 13

MCP73826 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 6-Pin SOT-23A (EIAJ SC-74) Device 3 2 1  4 5 6 Part Number Code MCP73826-4.1VCH CN MCP73826-4.2VCH CP Legend: 1 Part Number code + temperature range and voltage (two letter code) 2 Part Number code + temperature range and voltage (two letter code) 3 Year and 2-month period code 4 Lot ID number Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. DS21705B-page 14  2002-2013 Microchip Technology Inc.

MCP73826 7.2 Package Dimensions Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation for TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size: Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 6-Pin SOT-23A 8 mm 4 mm 3000 7 in. Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging .075 (1.90) REF. .122 (3.10) .069 (1.75) .098 (2.50) .059 (1.50) .020 (0.50) .014 (0.35) .037 (0.95) REF. .118 (3.00) .010 (2.80) .057 (1.45) .035 (0.90) .008 (0.20) 10° MAX. .004 (0.09) .006 (0.15) .024 (0.60) .000 (0.00) .004 (0.10)  2002-2013 Microchip Technology Inc. DS21705B-page 15

MCP73826 NOTES: DS21705B-page 16  2002-2013 Microchip Technology Inc.

THE MICROCHIP WEB SITE CUSTOMER SUPPORT Microchip provides online support via our WWW site at Users of Microchip products can receive assistance www.microchip.com. This web site is used as a means through several channels: to make files and information easily available to • Distributor or Representative customers. Accessible by using your favorite Internet • Local Sales Office browser, the web site contains the following • Field Application Engineer (FAE) information: • Technical Support • Product Support – Data sheets and errata, application notes and sample programs, design Customers should contact their distributor, resources, user’s guides and hardware support representative or field application engineer (FAE) for documents, latest software releases and archived support. Local sales offices are also available to help software customers. A listing of sales offices and locations is included in the back of this document. • General Technical Support – Frequently Asked Questions (FAQ), technical support requests, Technical support is available through the web site online discussion groups, Microchip consultant at: http://microchip.com/support program member listing • Business of Microchip – Product selector and ordering guides, latest Microchip press releases, listing of seminars and events, listings of Microchip sales offices, distributors and factory representatives CUSTOMER CHANGE NOTIFICATION SERVICE Microchip’s customer notification service helps keep customers current on Microchip products. Subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata related to a specified product family or development tool of interest. To register, access the Microchip web site at www.microchip.com. Under “Support”, click on “Customer Change Notification” and follow the registration instructions.  2002-2013 Microchip Technology Inc. DS21705B-page 17

READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480)792-4150. Please list the following information, and use this outline to provide us with your comments about this document. TO: Technical Publications Manager Total Pages Sent ________ RE: Reader Response From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Y N Device: Literature Number: DS21705B Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this document easy to follow? If not, why? 4. What additions to the document do you think would enhance the structure and subject? 5. What deletions from the document could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? DS21705B-page 18  2002-2013 Microchip Technology Inc.

MCP73826 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -X.X X XXXX Examples: Device Output Temperature Package a) MCP73826-4.1VCHTR: Linear Charge Man- Voltage Range agement Controller, 4.1V, Tape and Reel. b) MCP73826-4.2VCHTR: Linear Charge Man- agement Controller, 4.2V, Tape and Reel. Device: MCP73826: Linear Charge Management Controller Output Voltage: = 4.1V = 4.2V Temperature Range: V = -20°C to +85°C Package: CHTR = SOT-23, 6-lead (Tape and Reel) Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2002-2013 Microchip Technology Inc. DS21705B-page19

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MCP73826 NOTES:  2002-2013 Microchip Technology Inc. DS21705B-page21

MCP73826 NOTES: DS21705B-page 22  2002-2013 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, dsPIC, and may be superseded by updates. It is your responsibility to FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, ensure that your application meets with your specifications. PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash MICROCHIP MAKES NO REPRESENTATIONS OR and UNI/O are registered trademarks of Microchip Technology WARRANTIES OF ANY KIND WHETHER EXPRESS OR Incorporated in the U.S.A. and other countries. IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, INCLUDING BUT NOT LIMITED TO ITS CONDITION, MTP, SEEVAL and The Embedded Control Solutions QUALITY, PERFORMANCE, MERCHANTABILITY OR Company are registered trademarks of Microchip Technology FITNESS FOR PURPOSE. Microchip disclaims all liability Incorporated in the U.S.A. arising from this information and its use. Use of Microchip Silicon Storage Technology is a registered trademark of devices in life support and/or safety applications is entirely at Microchip Technology Inc. in other countries. the buyer’s risk, and the buyer agrees to defend, indemnify and Analog-for-the-Digital Age, Application Maestro, BodyCom, hold harmless Microchip from any and all damages, claims, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, suits, or expenses resulting from such use. No licenses are dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, conveyed, implicitly or otherwise, under any Microchip ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial intellectual property rights. Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2002-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620768921 QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures == ISO/TS 16949 == are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.  2002-2013 Microchip Technology Inc. DS21705B-page 23

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