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MCP16323T-250E/NG产品简介:
ICGOO电子元器件商城为您提供MCP16323T-250E/NG由Microchip设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MCP16323T-250E/NG价格参考¥8.62-¥12.26。MicrochipMCP16323T-250E/NG封装/规格:PMIC - 稳压器 - DC DC 开关稳压器, 固定 降压 开关稳压器 IC 正 2.5V 1 输出 3A 16-VFQFN 裸露焊盘。您可以下载MCP16323T-250E/NG参考资料、Datasheet数据手册功能说明书,资料中有MCP16323T-250E/NG 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC) |
描述 | IC REG BUCK SYNC 2.5V 3A 16-VQFN |
产品分类 | |
品牌 | Microchip Technology |
数据手册 | http://www.microchip.com/mymicrochip/filehandler.aspx?ddocname=en556746 |
产品图片 | |
产品型号 | MCP16323T-250E/NG |
PWM类型 | 电流模式 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
供应商器件封装 | 16-QFN(3x3) |
其它名称 | MCP16323T-250E/NGDKR |
包装 | Digi-Reel® |
同步整流器 | 是 |
安装类型 | 表面贴装 |
封装/外壳 | 16-VFQFN 裸露焊盘 |
工作温度 | -40°C ~ 125°C |
标准包装 | 1 |
电压-输入 | 6 V ~ 18 V |
电压-输出 | 2.5V |
电流-输出 | 3A |
类型 | 降压(降压) |
输出数 | 1 |
输出类型 | 固定 |
频率-开关 | 1MHz |
Obsolete Device For further designs, please refer to the MIC24046 Data Sheet MCP16323 18V Input, 3A Output, High Efficiency Synchronous Buck Regulator with Power Good Indication Features Description • Up to 95% Typical Efficiency The MCP16323 is a highly integrated, high-efficiency, • Input Voltage Range: 6.0V to 18V fixed frequency, synchronous step-down DC-DC converter in a 16-pin QFN package that operates from • 3A Output Current input voltages up to 18V. Integrated features include a • Fixed Output Voltages: 0.9V, 1.5V, 1.8V, 2.5V, high-side and low-side N-Channel switch, fixed 3.3V, 5V with 2% Output Voltage Accuracy frequency Peak Current Mode Control, internal • Adjustable Version Output Voltage Range: compensation, peak current limit, V overvoltage OUT 0.9V to 5V with 1.5% Reference Voltage Accuracy protection and overtemperature protection. Minimal • Integrated N-Channel High-Side Switch: 180mΩ external components are necessary to develop a • Integrated N-Channel Low-Side Switch: 120mΩ complete synchronous step-down DC-DC converter • 1MHz Fixed Frequency power supply. • Low Device Shutdown Current High converter efficiency is achieved by integrating a • Peak Current Mode Control high-speed, current limited, low resistance, high-side N-Channel MOSFET, as well as a high-speed, low- • Internal Compensation resistance, low-side N-Channel MOSFET and • Stable with Ceramic Capacitors associated drive circuitry. High switching frequency • Internal Soft-Start minimizes the size of the inductor and output capacitor, • Cycle-by-Cycle Peak Current Limit resulting in a small solution size. • Undervoltage Lockout (UVLO): 5.75V The MCP16323 device can supply 3A of continuous • Overtemperature Protection current while regulating the output voltage from 0.9V to • V Overvoltage Protection 5V. A high-performance peak current mode OUT architecture keeps the output voltage tightly regulated, • V Voltage Supervisor Reported at the PGPin OUT even during input voltage steps and output current • Available Package: QFN-16 (3x3mm) transient conditions that are common in power supplies. Applications The regulator can be turned on and off with a logic level • PIC®/dsPIC® Microcontroller Bias Supply signal applied to the EN input. The EN pin is internally • 12V Industrial Input DC-DC Conversion pulled up to a 4.2V reference and is rated for a maximum of 6V. With EN low, typically 5µA of current • Set-Top Boxes is consumed from the input, making the part ideal for • DSL Cable Modems power shedding and load distribution applications. The • Automotive PG output is an open-drain output pin used to interface • Wall Cube Regulation with other components of the system, and can be • SLA Battery Powered Devices pulled up to a maximum of 6V. • AC-DC Digital Control Power Source The output voltage can either be fixed at output • Power Meters voltages of 0.9V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or • Consumer adjustable using an external resistor divider. The MCP16323 is offered in a 3x3 QFN-16 surface mount • Medical and Health Care package. • Distributed Power Supplies 2011-2016 Microchip Technology Inc. DS20002284B-page 1
MCP16323 Package Type MCP16323 3x3QFN* D D W GN GN W S P P S 16 15 14 13 SW 1 12 SW VIN 2 EP 11 VIN VIN 3 17 10 BOOST SGND 4 9 EN 5 6 7 8 B C C G F N N P *Includes Exposed Thermal Pad (EP); see Table3-1. Typical Applications Typical Application with Adjustable Output Voltage CBOOST 22nF BOOST 4.7L1µH VOUT VIN SW 4.2V@3A 6.0Vto18V VIN 36.5kΩ 323 VFB 2xC2O2UTµF 6 1 VOUT P 10kΩ CIN MC 10kΩ 2x10µF EN PG SGND PGND Typical Application with Fixed Output Voltage CBOOST 22nF L1 BOOST 4.7µH VOUT 3.3V@3A VIN SW 6.0Vto18V VIN COUT 2x22µF 23 VFB 3 6 VOUT 2x1C0INµF CP1 10kΩ M EN PG SGND PGND DS20002284B-page 2 2011-2016 Microchip Technology Inc.
MCP16323 1.0 ELECTRICAL † Notice: Stresses above those listed under “Absolute CHARACTERISTICS Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions Absolute Maximum Ratings† above those indicated in the operational sections of this specification is not intended. Exposure to maximum V .......................................................................-0.3V to 20V IN rating conditions for extended periods may affect SW.........................................................................-1V to 20V device reliability. BOOST – GND...........................................-0.3V to (V +6V) IN EN,V , PG Voltage..............................................-0.3V to 6V FB Continuous Total Power Dissipation ....................................... ...................................................See Thermal Characteristics Storage Temperature....................................-65°C to +150°C Operating Junction Temperature...................-40°C to +125°C ESD Protection On All Pins: HBM.........................................................................3kV MM..........................................................................200V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T =+25°C, V =12V, V =3.3V, I =300 mA, A IN OUT OUT L=4.7µH, C =2x22µF, C =2x10µF. Boldface specifications apply over the T range of -40°C to +125°C. OUT IN J Parameters Sym. Min. Typ. Max. Units Conditions V Supply Voltage IN Input Voltage V 6.0 — 18 V IN Quiescent Current I — 5.2 — mA I = 0 mA Q OUT (Switching) Quiescent Current I — 2.3 — mA Closed Loop in Q (Non-Switching) Overvoltage I = 0 mA OUT Quiescent Current - I — 5 10 µA EN = 0 Q Shutdown V Undervoltage Lockout IN Undervoltage Lockout Start UVLO 5.5 5.75 6.0 V V Rising STRT IN Undervoltage Lockout UVLO — 0.65 — V Non-Switching HYS Hysteresis Output Characteristics Maximum Output Current I 3 — — A Note2 OUT MCP16323 Output Voltage Adjust V 0.9 — 5.0 V OUT Range Output Voltage Tolerance V V -2% V V +2% V I = 1A OUT-PWM OUT OUT OUT OUT in PWM Mode Output Voltage Tolerance V V -1% V +1% V +3.5% V I = 0A OUT-PFM OUT OUT OUT OUT in PFM Mode Feedback Voltage V 0.886 0.9 0.914 V FB Feedback Reference V -1.5 — 1.5 % FB-TOL Tolerance Note 1: Regulator SW pin is forced off for 240ns every eight cycles to ensure the BOOST cap is replenished. 2: As a result of the maximum duty cycle limitations, 3A of output current for 5V output conditions may not regulate the voltage. External component selection may have an impact on this. A minimum input voltage of 6.5V is recommended. 2011-2016 Microchip Technology Inc. DS20002284B-page 3
MCP16323 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, T =+25°C, V =12V, V =3.3V, I =300 mA, A IN OUT OUT L=4.7µH, C =2x22µF, C =2x10µF. Boldface specifications apply over the T range of -40°C to +125°C. OUT IN J Parameters Sym. Min. Typ. Max. Units Conditions PFM Mode Feedback V — V + 1% — V FB-PFM OUT Comparator Threshold Feedback Input Bias I — 100 — nA FB Current EN Input Characteristics EN Input Logic High V 2.2 — — V IH EN Input Logic Low V — — 0.8 V IL EN Input Hysteresis V — 480 — mV EN-HYST EN Input Leakage Current I — 3.5 — µA V = 5V ENLK EN — -1.5 — µA V = 0V EN Soft-Start Time t — 4 — ms SS Switching Characteristics Switching Frequency f 0.9 1 1.1 MHz Open Loop V Low SW FB Maximum Duty Cycle DC 95 97 99 % Open Loop V Low MAX FB Note1 Minimum Duty Cycle — 7 — % NMOS Low-Side Low-Side R — 120 — m DS(ON) Switch On Resistance NMOS High-Side High-Side — 180 — m Switch On Resistance R DS(ON) NMOS High-Side I 3.4 3.8 4.4 A MCP16323 N(MAX) Switch Current Limit PG Output Characteristics PG Low-level PG — — 0.01 V I = -0.3mA IL PG Output Voltage PG High-Level Output I — 0.5 — µA V = 5V PGLK PG Leakage Current PG Release Timer t — 10 — ms PG V Undervoltage V 91%V 93%V 95%V OUT OUT-UV OUT OUT OUT Threshold V Undervoltage V — 1.5%V — OUT OUT-UV_HYST OUT Hysteresis V Overvoltage Thresh- V — 103%V — OUT OUT-OV OU old T V Overvoltage V — 1%V — OUT OUT-OV_HYST OUT Hysteresis Thermal Characteristics Thermal Shutdown T — 170 — °C SD Die Temperature Die Temperature T — 10 — °C SDHYS Hysteresis Note 1: Regulator SW pin is forced off for 240ns every eight cycles to ensure the BOOST cap is replenished. 2: As a result of the maximum duty cycle limitations, 3A of output current for 5V output conditions may not regulate the voltage. External component selection may have an impact on this. A minimum input voltage of 6.5V is recommended. DS20002284B-page 4 2011-2016 Microchip Technology Inc.
MCP16323 TABLE 1-1: TEMPERATURE CHARACTERISTICS Electrical Characteristics Parameters Sym Min Typ Max Units Conditions Temperature Ranges Operating Junction Temperature T -40 — 125 °C Steady State J Range Storage Temperature Range T -65 — 150 °C A Maximum Junction Temperature T — — 150 °C Transient J Package Thermal Resistances Thermal Resistance, 16L 3x3-QFN — 38.5 — °C/W JA Note 1: Measured using a 4-layer FR4 Printed Circuit Board with a 13.5 in2, 1oz internal copper ground plane. 2011-2016 Microchip Technology Inc. DS20002284B-page 5
MCP16323 NOTES: DS20002284B-page 6 2011-2016 Microchip Technology Inc.
MCP16323 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, V =12V, EN = Floating (internally pulled up), C =20 µF, C =2x22µF, IN IN OUT L=4.7µH (XAL6060-472MEB), I =200mA, T =+25°C. LOAD A 100 100 95 VIN= 6V 90 VIN= 6V 90 %) 85 VIN= 18V VIN= 12V %) 80 cy ( 7850 cy ( 70 VIN= 12V n n Efficie 667050 VOUT= 5V Efficie 60 VIN= 18V VOUT= 1.8V 50 55 50 40 0.0 0.6 1.2 1.8 2.4 3.0 0 0.6 1.2 1.8 2.4 3 I (A) I (A) OUT OUT FIGURE 2-1: 5V V Efficiency vs. I . FIGURE 2-4: 1.8V V Efficiency vs. OUT OUT OUT I . OUT 95 VIN= 6V 90 VIN= 6V 8950 8805 VIN= 12V %) 80 %)75 cy ( 75 VIN= 18VVIN= 12V cy (6750 VIN= 18V Efficien 667050 VOUT= 3.3V Efficien556050 VOUT= 1.5V 55 45 50 40 0 0.6 1.2 1.8 2.4 3 0 0.6 1.2 1.8 2.4 3 IOUT(A) IOUT(A) FIGURE 2-2: 3.3V V Efficiency vs. FIGURE 2-5: 1.5V V Efficiency vs. OUT OUT I I OUT. OUT. 100 100 VIN= 6V VOUT= 0.9V 90 90 VIN= 6V %) 80 %) 80 ency ( 70 VIN= 18V VIN= 12V ency ( 70 VIN= 8V Effici 60 Effici 60 50 VOUT= 2.5V 50 VIN= 10V 40 40 0 0.6 1.2 1.8 2.4 3 0 0.6 1.2 1.8 2.4 3 I (A) I (A) OUT OUT FIGURE 2-3: 2.5V V Efficiency vs. FIGURE 2-6: 0.9V V Efficiency vs. OUT OUT I I OUT. OUT. 2011-2016 Microchip Technology Inc. DS20002284B-page 7
MCP16323 Note: Unless otherwise indicated, V =12V, EN = Floating (internally pulled up), C =20 µF, C =2x22µF, IN IN OUT L=4.7µH, I =200mA, T =+25°C. LOAD A 5.1 1.812 5.05 VIN= 12V 1.81 VOUT=1.8V 5 1.808 V) 4.95 VIN= 18V V) 1.806 VIN= 6V V(OUT 4.9 VIN= 6V V(OUT 1.804 4.85 VOUT= 5V 1.802 4.8 1.8 VIN= 12V 4.75 1.798 VIN= 18V 0 0.6 1.2 1.8 2.4 3 0 0.6 1.2 1.8 2.4 3 IOUT(A) IOUT(A) FIGURE 2-7: 5V V vs. I FIGURE 2-10: 1.8V V vs. I OUT OUT. OUT OUT. 3.34 1.508 3.335 VOUT= 3.3V 1.507 VOUT=1.5V 3.33 1.506 1.505 V)3.33.2325 VIN= 6V V) 1.504 VIN= 6V ( ( 1.503 OUT3.315 OUT1.502 VIN= 12V V 3.31 V 1.501 3.305 VIN= 18V 1.5 3.3 VIN= 12V 1.499 VIN= 16V 3.295 1.498 0 0.6 1.2 1.8 2.4 3 0 0.6 1.2 1.8 2.4 3 I (A) I (A) OUT OUT FIGURE 2-8: 3.3V V vs. I FIGURE 2-11: 1.5V V vs. I OUT OUT. OUT OUT. 2.525 0.904 2.52 VOUT= 2.5V 0.903 VOUT=0.9V 0.902 2.515 V) VIN= 6V V) 0.901 (OUT 2.51 (OUT 0.9 VIN= 6V V2.505 V 0.899 VIN= 8V VIN= 18V 2.5 0.898 VIN= 10V VIN= 12V 2.495 0.897 0 0.6 1.2 1.8 2.4 3 0 0.6 1.2 1.8 2.4 3 I (A) I (A) OUT OUT FIGURE 2-9: 2.5V V vs. I FIGURE 2-12: 0.9V V vs. I OUT OUT. OUT OUT. DS20002284B-page 8 2011-2016 Microchip Technology Inc.
MCP16323 Note: Unless otherwise indicated, V =12V, EN = Floating (internally pulled up), C =20 µF, C =2x22µF, IN IN OUT L=4.7µH, I =200mA, T =+25°C. LOAD A 5.04 1.804 5.02 VOUT= 5V VOUT= 1.8V 1.803 5 (V) 4.98 IOUT= 1A IOUT= 2A (V)1.802 IOUT= 2A VOUT4.96 IOUT= 3A VOUT1.801 4.94 1.8 IOUT= 3A 4.92 1.799 4.9 IOUT= 1A 1.798 6 8 10 12 14 16 18 6 8 10 12 14 16 18 VIN(V) VIN(V) FIGURE 2-13: 5V V vs. V FIGURE 2-16: 1.8V V vs. V OUT IN. OUT IN. 3.31 1.503 3.308 VOUT= 3.3V 1.5025 VOUT= 1.5V 3.306 1.502 IOUT= 2A 1.5015 V(V)OUT 33..330024 IOUT= 1A V(V)IN11.5.500015 3.3 1.5 IOUT= 3A IOUT= 3A 3.298 1.4995 IOUT= 1A 3.296 IOUT= 2A 1.499 3.294 1.4985 6 8 10 12 14 16 18 6 8 10 12 14 16 VIN(V) VOUT(V) FIGURE 2-14: 3.3V V vs. V FIGURE 2-17: 1.5V V vs. V OUT IN. OUT IN. 2.506 0.9012 2.505 VOUT= 2.5V 0.901 VOUT= 0.9V 2.504 0.9008 2.503 IOUT= 2A 0.9006 IOUT= 2A (V) 2.502 (V) 0.9004 VOUT22..45290.591 IOUT= 3A IOUT= 1A VOUT0.9000.92 IOUT= 3A IOUT= 1A 0.8998 2.498 0.8996 2.497 0.8994 2.496 6 7 8 9 10 6 8 10 12 14 16 18 VIN(V) VIN(V) FIGURE 2-15: 2.5V V vs. V FIGURE 2-18: 0.9V V vs. V OUT IN. OUT IN. 2011-2016 Microchip Technology Inc. DS20002284B-page 9
MCP16323 Note: Unless otherwise indicated, V =12V, EN = Floating (internally pulled up), C =20 µF, C =2x22µF, IN IN OUT L=4.7µH, I =200mA, T =+25°C. LOAD A 8 1020 7 Hz) 1015 µA)6 y (k 1010 urrent (45 equenc 11000005 wn C3 or Fr 995 Shudo12 Oscillat 998950 0 980 6 9 12 15 18 -40 -10 20 50 80 110 VIN(V) Ambient Temperature (°C) FIGURE 2-19: Shutdown Current vs. Input FIGURE 2-22: Oscillator Frequency vs. Voltage. Temperature (I =300mA). OUT 4.90 A) 5.50 m 4.85 nt ( 5.45 Current (µA)4444....67785050 scent Curre 55..3450 IOUT= 0A n ui w4.60 Q 5.30 o g d4.55 n ut hi 5.25 h4.50 c S4.45 Swit 5.20 -40 -10 20 50 80 110 -40 -10 20 50 80 110 Ambient Temperature (°C) Ambent Temperature (°C) FIGURE 2-20: Shutdown Current vs. FIGURE 2-23: Input Quiescent Current vs. Temperature. Temperature (No Load, Switching). 3.300 nt 2.42 e 3.298 IOUT= 0.1A urr 2.40 3.296 nt C 2.38 IOUT= 0A V(V)OUT 33..229924 IOUT= 1A g Quisce(mA) 22..3346 3.290 n hi 3.288 witc 2.32 3.286 S 2.30 n- o 3.284 N 2.28 -40 -10 20 50 80 110 -40 -10 20 50 80 110 Ambient Temperature (°C) Ambient Temperature (°C) FIGURE 2-21: Output Voltage vs. FIGURE 2-24: Input Current vs. Temperature. Temperature (No Load, No Switching). DS20002284B-page 10 2011-2016 Microchip Technology Inc.
MCP16323 Note: Unless otherwise indicated, V =12V, EN = Floating (internally pulled up), C =20 µF, C =2x22µF, IN IN OUT L=4.7µH, I =200mA, T =+25°C. LOAD A V = 3.3V 30 OUT Typical Minimum Duty Cycle = 7% IOUT = 200 mA 25 V = 12V IN 20 V) ( VIN15 x Ma10 5 0 0.9 1.2 1.5 1.8 2.1 V (V) OUT FIGURE 2-25: Maximum V to V Ratio FIGURE 2-28: Start-up From Enable. IN OUT for Continuous Switching. V = 3.3V OUT IOUT = 50 mA VOUT = 3.3V VIN = 12V IOUT = 200 mA V = 12V IN FIGURE 2-26: Light Load Switching FIGURE 2-29: Start-up From V IN. Waveforms. V = 3.3V V = 3.3V OUT OUT IOUT = 500 mA IOUT = 100 mA to 600 mA VIN = 12V VIN = 12V FIGURE 2-27: Heavy Load Switching FIGURE 2-30: Load Transient Response. Waveforms. 2011-2016 Microchip Technology Inc. DS20002284B-page 11
MCP16323 Note: Unless otherwise indicated, V =12V, EN = Floating (internally pulled up), C =20 µF, C =2x22µF, IN IN OUT L=4.7µH, I =200mA, T =+25°C. LOAD A V = 3.3V OUT I = 200 mA OUT V = 6V to 10V IN FIGURE 2-31: Line Transient Response. DS20002284B-page 12 2011-2016 Microchip Technology Inc.
MCP16323 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table3-1. TABLE 3-1: PIN FUNCTION TABLE MCP16323 Symbol Description 3x3 QFN 1 SW Output switch node, connects to the inductor and the bootstrap capacitor 2 V Input supply voltage pin for power and internal biasing IN 3 V Input supply voltage pin for power and internal biasing IN 4 SGND Primary signal ground 5 V Output voltage feedback pin. Connect V to V for fixed version and output FB FB OUT resistor divider for adjustable version. 6 NC No Connection 7 NC No Connection 8 PG Power Good open-drain output, pulled up to a maximum of 6V 9 EN Enable input pin. Logic high enables the operation. Internally pulled up, pull EN pin low to disable regulator’s output. Maximum voltage on EN input is 6V. 10 BOOST Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is connected between the BOOST and SW pins. 11 V Input supply voltage pin for power and internal biasing IN 12 SW Output switch node, connects to the inductor and the bootstrap capacitor 13 SW Output switch node, connects to the inductor and the bootstrap capacitor 14 PGND GND supply for the internal low-side NMOS/integrated diode 15 PGND GND supply for the internal low-side NMOS/integrated diode 16 SW Output switch node, connects to the inductor and the bootstrap capacitor 17 EP Exposed Thermal Pad (EP); must be connected to GND 3.1 Switch Pin (SW) 3.3 Signal Ground Pin (S ) GND The drain of the low-side N-Channel switch is This ground is used for the majority of the device, connected internally to the source of the high-side including the analog reference, control loop, and other N-Channel switch, and externally to the SW node circuits. consisting of the inductor and bootstrap capacitor. The SW node can rise very fast as a result of the internal 3.4 Feedback Voltage Pin (V ) FB high-side switch turning on. It should be connected directly to the 4.7µH inductor with a wide, short trace. The VFB input pin is used to provide output voltage reg- ulation by either using a resistor divider or V OUT 3.2 Power Supply Input Voltage Pin directly. For the adjustable version, the VFB will be 0.9V typical with the output voltage in regulation. For the (V ) IN fixed version, the V will be equal to the correspond- FB Connect the input voltage source to VIN. The input ing VOUT value. source should be decoupled to GND using 2x10µF capacitors. The amount of the capacitance depends on 3.5 Power Good Pin (PG) the impedance of the source and output current. The PG is an open-drain, active-low output. The regulator input capacitors provide AC current for the high-side output voltage is monitored and the PG line will remain power switch and a stable voltage source for the low until the output voltage reaches the V internal device power. This capacitor should be OUT-UV threshold. Once the internal comparator detects that connected as close as possible to the V and GND IN the output voltage is above the V threshold, an pins. OUT-UV internal delay timer is activated. After a 10ms delay, the PG open-drain output pin can be pulled high, indicating that the output voltage is in regulation. The maximum voltage applied to the PG output pin should not exceed 6V. 2011-2016 Microchip Technology Inc. DS20002284B-page 13
MCP16323 3.6 Enable Pin (EN) The EN input pin is a logic-level input used to enable or disable the device. A logic high (>2.2V) will enable the regulator output, while a logic low (<0.8V) will ensure that the regulator is disabled. This pin is internally pulled up to an internal reference and will be enabled when V >UVLO, unless the EN pin is pulled low. The IN maximum input voltage applied to the EN pin should not exceed 6V. 3.7 BOOST Pin (BOOST) This pin will provide the bootstrap voltage required for driving the upper internal NMOS switch of the buck regulator. An external ceramic capacitor placed between the BOOST input pin and the SW pin will provide the necessary drive voltage for the upper switch. During steady state operation, the capacitor is recharged on every low-side, synchronous switching cycle. If the Switch mode approaches 100% duty cycle for the high-side MOSFET, the device will automatically reduce the duty cycle switch to a minimum off time of 240ns on every 8th cycle to recharge the boost capacitor. 3.8 Power Ground Pin (P ) GND This is a separate ground connection used for the low- side synchronous switch to isolate switching noise from the rest of the device. 3.9 Exposed Thermal Pad (EP) There is no internal electrical connection between the Exposed Thermal Pad (EP) and the P and S GND GND pins. The EP must be connected to GND on the Printed Circuit Board (PCB). DS20002284B-page 14 2011-2016 Microchip Technology Inc.
MCP16323 4.0 DETAILED DESCRIPTION 4.1.4 ENABLE INPUT The enable input (EN) is used to disable the device. If 4.1 Device Overview disabled, the device consumes a minimal current from the input. Once enabled, the internal soft start controls The MCP16323 is a high input voltage step-down the output voltage rate of rise, preventing high-inrush regulator, capable of supplying 3A to a regulated output current and output voltage overshoot. The EN is voltage from 0.9V to 5V. Internally, the 1MHz oscillator internally pulled up or enabled, to disable the converter, provides a fixed frequency, while the Peak Current it must be pulled low. Mode Control architecture varies the duty cycle for output voltage regulation. An internal floating driver is 4.1.5 SOFT START used to turn the high-side integrated N-Channel The internal reference voltage rate of rise is controlled MOSFET on and off. The power for this driver is during start-up, minimizing the output voltage over- derived from an external boost capacitor whose energy shoot and the inrush current. is replenished when the low-side N-Channel MOSFET is turned on. When the maximum duty cycle 4.1.6 OUTPUT OVERVOLTAGE approaches 100%, the boost capacitor is replenished PROTECTION for 240ns after every eight cycles. If the output of the regulator exceeds 103% of the 4.1.1 INTERNAL REFERENCE VOLTAGE regulation voltage, the SW outputs will tri-state to V protect the device from damage. This check occurs at REF the start of each switching cycle. For the adjustable version, an integrated precise 0.9V reference combined with an external resistor divider 4.1.7 INPUT UNDERVOLTAGE LOCKOUT sets the desired converter output voltage. The resistor divider can vary without affecting the control system An integrated Undervoltage Lockout (UVLO) prevents gain. High-value resistors consume less current, but the converter from starting until the input voltage is high are more susceptible to noise. For the fixed version, an enough for normal operation. The converter will integrated precise voltage reference is set to the typically start at 5.75V (typical) and operate down to desired V value and is directly connected to V . 5.25V (typical). Hysteresis of 500mV (typical) is added OUT OUT to prevent starting and stopping during start-up, as a 4.1.2 INTERNAL COMPENSATION result of loading the input voltage source. All control system components necessary for stable 4.1.8 MINIMUM DUTY CYCLE operation over the entire device operating range are integrated, including the error amplifier and inductor A minimum duty cycle of 70ns typical prevents the current slope compensation. device from constant switching for high step-down voltage ratios. Duty cycles less than this minimum will 4.1.3 EXTERNAL COMPONENTS initiate pulse skipping to maintain output voltage regulation, resulting in higher output voltage ripple. External components consist of: Duty cycle for continuous inductor current operation is • Input capacitor approximated by V /V . For a 1MHz switching OUT IN • Output filter (inductor and capacitor) frequency or 1µs period, this results in a 7% duty cycle • Boost capacitor minimum. Maximum VIN for continuous switching can • Resistor divider (adjustable version only) be approximated dividing VOUT by the minimum duty cycle or 7%. For example, the maximum input voltage The selection of the external inductor, output capacitor, for continuous switching for a 1.5V output is equal to input capacitor and boost capacitor is dependent upon approximately 21V. the output voltage and the maximum output current. 2011-2016 Microchip Technology Inc. DS20002284B-page 15
MCP16323 4.1.9 OVERTEMPERATURE PROTECTION Overtemperature protection limits the silicon die temperature to +170°C by turning the converter off. The normal switching resumes at +160°C. V IN UV C IN (cid:87)(cid:396)(cid:381)(cid:410)(cid:286)(cid:272)(cid:415)(cid:381)(cid:374) V OTEMP OUT EN (cid:87)(cid:396)(cid:381)(cid:410)(cid:286)(cid:272)(cid:415)(cid:381)(cid:374) Monitor and PG 4.2V Control VBoOlOtaSgTe Current V OUT Limit RTOP Slope Comp BOOST FB OV Pro(cid:410)(cid:286)(cid:272)(cid:415)on + RBOT + CS CBOOST VREFand (cid:94)(cid:381)(cid:332)start + + COMP Amp - PWM HS Drive - L Comparator SW VOUT Gate Drive Compe(cid:374)(cid:400)(cid:258)(cid:415)(cid:381)(cid:374) 1MHz Control Oscillator LS Drive C - OUT COMP V REF + PFM Comparator SGND PGND FIGURE 4-1: MCP16323 Block Diagram. DS20002284B-page 16 2011-2016 Microchip Technology Inc.
MCP16323 4.2 Functional Description L VOUT 4.2.1 STEP-DOWN OR BUCK S1 CONVERTER IL The MCP16323 is a synchronous, step-down or buck converter capable of stepping input voltages ranging VIN COUT from 6V to 18V down to 0.9V to 5V. S2 The integrated high-side switch is used to chop or modulate the input voltage using a controlled duty cycle for output voltage regulation. The integrated low-side switch is used to freewheel current when the high-side switch is turned off. High efficiency is achieved by using low-resistance switches and low equivalent series resistance (ESR), inductor and capacitors. When the IL IOUT high-side switch is turned on, a DC voltage is applied to the inductor (V –V ), resulting in a positive linear IN OUT ramp of inductor current. When the high-side switch turns off and the low-side switch turns on, the applied VIN inductor voltage is equal to –V , resulting in a OUT SW negative linear ramp of inductor current. In order to VOUT ensure there is no shoot through current, a dead time where both switches are off is implemented between S1 ON S2 ON the high-side switch turning off and the low-side switch Continuous Inductor Current Mode turning on, and the low-side switch turning off and the high-side switch turning on. For steady-state, continuous inductor current operation, the positive inductor current ramp must IL equal the negative current ramp in magnitude. While operating in steady state, the switch duty cycle must be IOUT equal to the relationship of V /V for constant OUT IN output voltage regulation, under the condition that the VIN inductor current is continuous, or never reaches zero. SW For discontinuous inductor current operation, the steady-state duty cycle will be less than V /V to OUT IN maintain voltage regulation. When the inductor current S1 ON S2 Both reaches zero, the low-side switch is turned off so that ON OFF Discontinuous Inductor Current Mode current does not flow in the reverse direction, keeping the efficiency high. The average of the chopped input FIGURE 4-2: Synchronous Step-Down voltage or SW node voltage is equal to the output Converter. voltage, while the average inductor current is equal to the output current. 2011-2016 Microchip Technology Inc. DS20002284B-page 17
MCP16323 4.2.2 PEAK CURRENT MODE CONTROL 4.2.4 HIGH-SIDE DRIVE The MCP16323 integrates a Peak Current Mode The MCP16323 features an integrated high-side Control architecture, resulting in superior AC regulation N-Channel MOSFET for high efficiency step-down while minimizing the number of voltage loop power conversion. An N-Channel MOSFET is used for compensation components, and their size, for its low resistance and size (instead of a P-Channel integration. Peak Current Mode Control takes a small MOSFET). The N-Channel MOSFET gate must be portion of the inductor current, replicates it and driven above its source to fully turn on the device, compares this replicated current sense signal with the resulting in a gate-drive voltage above the input to turn output of the integrated error voltage. In practice, the on the high-side N-Channel. The high-side N-Channel inductor current and the internal switch current are source is connected to the inductor and boost cap or equal during the switch-on time. By adding this peak switch node. When the high-side switch is off and the current sense to the system control, the step-down low-side is on, the inductor current flows through the power train system can be approximated by a 1st order low-side switch, providing a path to recharge the boost system rather than a 2nd order system. This reduces cap from the boost voltage source. An internal boost- the system complexity and increases its dynamic blocking diode is used to prevent current flow from the performance. boost cap back into the output during the internal switch-on time. Prior to start-up, the boost cap has no For Pulse-Width Modulation (PWM) duty cycles that stored charge to drive the switch. An internal regulator exceed 50%, the control system can become bimodal, is used to “pre-charge” the boost cap. Once pre- where a wide pulse followed by a short pulse repeats charged, the switch is turned on and the inductor instead of the desired fixed pulse width. To prevent this current flows. When the high-side switch turns off and mode of operation, an internal compensating ramp is the low-side turns on, current freewheels through the summed into the current sense signal. inductor and low-side switch, providing a path to 4.2.3 PULSE WIDTH MODULATION recharge the boost cap. When the duty cycle (PWM) approaches its maximum value, there is very little time for the boost cap to be recharged due to the short The internal oscillator periodically starts the switching amount time that the low-side switch is on. Therefore, period, which in the MCP16323’s case occurs every when the maximum duty cycle approaches, the switch 1µs or 1MHz. With the high-side integrated node is forced off for 240ns every eight cycles to N-Channel MOSFET turned on, the inductor current ensure that the boost cap gets replenished. ramps up until the sum of the current sense and slope compensation ramp exceeds the integrated error amplifier output. Once this occurs, the high-side switch turns off and the low-side switch turns on. The error amplifier output slews up or down to increase or decrease the inductor peak current feeding into the output LC filter. If the regulated output voltage is lower than its target, the inverting error amplifier output rises. This results in an increase in the inductor current to correct for errors in the output voltage. The fixed frequency duty cycle is terminated when the sensed inductor peak current, summed with the internal slope compensation, exceeds the output voltage of the error amplifier. The PWM latch is set by turning off the high- side internal switch and preventing it from turning on until the beginning of the next cycle. DS20002284B-page 18 2011-2016 Microchip Technology Inc.
MCP16323 5.0 APPLICATION INFORMATION 5.0.3 GENERAL DESIGN EQUATIONS The step-down converter duty cycle can be estimated 5.0.1 TYPICAL APPLICATIONS using Equation5-2, while operating in Continuous The MCP16323 synchronous step-down converter Inductor Current Mode. This equation accounts for the operates over a wide input range, up to 18V maximum. forward drop of two internal N-Channel MOSFETS. As Typical applications include generating a bias or V load current increases, the voltage drop in both internal DD voltage for PIC® microcontrollers, digital control system switches will increase, requiring a larger PWM duty bias supply for AC-DC converters and 12V industrial cycle to maintain the output voltage regulation. Switch input and similar applications. voltage drop is estimated by multiplying the switch current times the switch resistance or R . DSON 5.0.2 ADJUSTABLE OUTPUT VOLTAGE CALCULATIONS EQUATION 5-2: CONTINUOUS INDUCTOR CURRENT DUTY CYCLE To calculate the resistor divider values for the MCP16323 adjustable version, use Equation5-1. R V +I R TOP OUT LSW DSONL D = ------------------------------------------------------------- is connected to V , R is connected to SGND, and OUT BOT V –I R both are connected to the V input pin. IN HSW DSONH FB EQUATION 5-1: RESISTOR DIVIDER 5.0.4 INPUT CAPACITOR SELECTION CALCULATION The step-down converter input capacitor must filter the R high-input ripple current, as a result of pulsing or TOP V = V 1+------------ chopping the input voltage. The MCP16323 input OUT FB R BOT voltage pin is used to supply voltage for the power train and as a source for internal bias. A low equivalent series resistance (ESR), preferably a ceramic EXAMPLE 5-1: 2.0V RESISTOR DIVIDER capacitor, is recommended. The necessary capacitance is dependent upon the maximum load V = 2.0V OUT current and source impedance. Three capacitor V = 0.9V FB parameters to keep in mind are the voltage rating, R = 10k equivalent series resistance and the temperature BOT R = 12.2k (Standard Value = 12.3k) rating. For wide temperature range applications, a TOP multi-layer X7R dielectric is recommended, while for V = 2.007V (using standard values) OUT applications with limited temperature range, a multilayer X5R dielectric is acceptable. The input EXAMPLE 5-2: 4.2V RESISTOR DIVIDER capacitor voltage rating must be V plus margin. IN V = 4.2V OUT 5.0.5 OUTPUT CAPACITOR SELECTION V = 0.9V FB The output capacitor provides a stable output voltage RBOT = 10k during sudden load transients, and reduces the output R = 36.7k (Standard Value = 36.5k) voltage ripple. As with the input capacitor, X5R and TOP X7R ceramic capacitors are well suited for this applica- V = 4.185V (using standard values) OUT tion. The error amplifier is internally compensated to ensure The MCP16323 is internally compensated, so the loop stability. External resistor dividers, inductance and output capacitance range is limited. See TABLE 5-1: output capacitance, all have an impact on the control “Capacitor Value Range” for the recommended system and should be selected carefully and evaluated output capacitor range. for stability. A 10kΩ resistor is recommended as a good trade-off for quiescent current and noise The amount and type of output capacitance and immunity. equivalent series resistance will have a significant effect on the output ripple voltage and system stability. The range of the output capacitance is limited due to the integrated compensation of the MCP16323. The output voltage capacitor rating should be a minimum of V plus margin. OUT TABLE 5-1: CAPACITOR VALUE RANGE Parameter Min Max C 8µF None IN 2011-2016 Microchip Technology Inc. DS20002284B-page 19
MCP16323 TABLE 5-1: CAPACITOR VALUE RANGE 5.0.7 BOOST CAPACITOR Parameter Min Max The boost capacitor is used to supply current for the internal high-side drive circuitry that is above the input C 33µF None OUT voltage. The boost capacitor must store enough energy 5.0.6 INDUCTOR SELECTION to completely drive the high-side switch on and off. A 22nF X5R or X7R capacitor is recommended for all The MCP16323 is designed to be used with small applications. The boost capacitor maximum voltage is surface mount inductors. Several specifications should 5.5V, so a 6.3V or 10V rated capacitor is be considered prior to selecting an inductor. To recommended. optimize system performance, low ESR inductors should be used. 5.0.8 THERMAL CALCULATIONS The MCP16323 is available in a 3x3 QFN-16 package. EQUATION 5-3: INDUCTOR CURRENT By calculating the power dissipation and applying the RIPPLE package thermal resistance (θ ), the junction JA V temperature is estimated. The maximum continuous L I = ------t junction temperature rating for the MCP16323 is L L ON +125°C. To quickly estimate the internal power dissipation for the switching step-down regulator, an empirical EXAMPLE 5-3: MCP16323 PEAK calculation using measured efficiency can be used. INDUCTOR CURRENT – 3A Given the measured efficiency, the internal power dissipation is estimated in Equation5-4. This power V = 12V IN dissipation includes all internal and external V = 3.3V OUT component losses. For a quick internal estimate, IOUT = 3A subtract the estimated inductor ESR loss from the PDIS L = 4.7µH calculation in Equation5-4. I EQUATION 5-4: TOTAL POWER L ILPK = ----2-----+IOUT DISSIPATION ESTIMATE V I OUT OUT Inductor ripple current = 509mA P = ------------------------------- –V I DIS Efficency OUT OUT Inductor peak current = 3.255A An inductor saturation rating minimum of 3.255A is The difference between the first term, input power, and recommended. A trade-off between size, cost and the second term, power delivered, is the total system efficiency is made to achieve the desired results. power dissipation. The inductor losses are estimated by P =I 2xL . L OUT ESR TABLE 5-2: MCP16323 RECOMMENDED EXAMPLE 5-4: POWER DISSIPATION INDUCTORS Size VIN = 12V Value DCR I Part Number SAT WxLxH V = 5.0V (µH) () (A) OUT (mm) I = 3A OUT Coilcraft® Efficiency = 88% MSS6132-472 4.7 0.056 2.84 6.1x6.1x3.2 Total System Dissipation = 2.05W LPS6225-472 4.7 0.065 3.2 6.2x6.2x2.5 L = 0.02 ESR MSS7341-502 4.7 0.024 3.16 7.3x7.3x4.1 P = 180mW L DO1813H-472 4.7 0.054 2.6 8.89x6.1x5.0 MCP16323 internal power dissipation estimate: Wurth Elektronik® P –P = 1.87W DIS L 7447785004 4.7 0.06 2.5 5.9x6.2x3.3 = 38.5°C/W JA 7447786004 4.7 0.057 2.8 5.9x6.2x5.1 Estimated Junction = +71.995°C 7447789004 4.7 0.033 3.9 7.3x3.2x1.5 Note 1: JA = 38.5°C/W for a 4-layer FR4 Printed Circuit EPCOS® Board with a 13.5 in2, 1oz internal copper ground plane. B82464G2 4.7 0.033 3.1 10.4x10.4x3.0 2: A smaller ground plane will result in a larger JA temperature rise. B82464A2 4.7 0.03 4.5 10.4x10.4x3.0 DS20002284B-page 20 2011-2016 Microchip Technology Inc.
MCP16323 5.0.9 PCB LAYOUT INFORMATION frequency switch current, C also provides a stable IN voltage source for the internal MCP16323 circuitry. Good printed circuit board layout techniques are Unstable PWM operation can result if there are important to any switching circuitry, and switching excessive transients or ringing on the V pin of the power supplies are no different. When wiring the IN MCP16323 device. In Figure5-1, C is placed close to switching high-current paths, short and wide traces IN the V pins. A ground plane on the bottom of the board should be used. Therefore, it is important that the input IN provides a low resistive and low inductive path for the and output capacitors be placed as close as possible to return current. The next priority in placement is the the MCP16323 to minimize the loop area. freewheeling current loop formed by C and L while OUT The feedback resistors and feedback signal should be strategically placing the C return close to C OUT IN routed away from the switching node and the switching return. Next, C should be placed between the BOOST current loop. When possible, ground planes and traces boost pin and the switch node pin. This leaves space should be used to help shield the feedback signal and close to the MCP16323 V pin to place R and FB TOP minimize noise and magnetic interference. R . R and R are routed away from the switch BOT TOP BOT A good MCP16323 layout starts with C placement. node so noise is not coupled into the high-impedance IN CIN supplies current to the input of the circuit when the VFB input. switch is turned on. In addition to supplying high- Top layer is made with 2 oz copper The 2 middle layers are made V with 1 oz copper OUT C C L and connected to OUT OUT V and GND IN R PG C 10Ω BOOST GND R MCP16323 TOP R BOT Trace on bottom layer C C IN IN V IN GND Bottom layer is a 2 oz Board Dimensions copper ground plane are 2.5" by 2.5" FIGURE 5-1: Recommended Layout. 2011-2016 Microchip Technology Inc. DS20002284B-page 21
MCP16323 C BOOST BOOST L VOUT 0.9Vto5V V SW IN 6.0Vto18V VIN 10Ω 3 C 2 R OUT 3 TOP 6 V 1 FB P V C OUT M R BOT R C EN PG IN PG S P GND GND FIGURE 5-2: Recommended Layout – Schematic. TABLE 5-3: RECOMMENDED LAYOUT COMPONENTS Component Value C 2x10µF IN C 2x22µF OUT L 4.7µH R 36.5k TOP R 10k BOT R 10k PG C 22nF BOOST DS20002284B-page 22 2011-2016 Microchip Technology Inc.
MCP16323 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 16-Lead QFN (3x3x0.9 mm) Example Part Number Code MCP16323T-150E/NG ACA ACA MCP16323T-180E/NG ACB E114 MCP16323T-250E/NG ACC 5256 MCP16323T-330E/NG ACD MCP16323T-500E/NG ACE MCP16323T-ADJE/NG ACF Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( e 3 ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2011-2016 Microchip Technology Inc. DS20002284B-page 23
MCP16323 DS20002284B-page 24 2011-2016 Microchip Technology Inc.
MCP16323 2011-2016 Microchip Technology Inc. DS20002284B-page 25
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MCP16323 APPENDIX A: REVISION HISTORY Revision B (June 2016) • Document marked “Obsolete Device”. Revision A (December 2011) • Original Release of this Document. 2011-2016 Microchip Technology Inc. DS20002284B-page 27
MCP16323 NOTES: DS20002284B-page 28 2011-2016 Microchip Technology Inc.
MCP16323 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. T -XXX X /XX Examples: Device Tape and Reel Output Temperature Package a) MCP16323T-150E/NG: Tape and Reel, 1.5V Output Voltage, Voltage Range Extended Temperature, 16LD QFN Package b) MCP16323T-ADJE/NG: Tape and Reel, Device: MCP16323T: High-Efficiency Synchronous Buck Adjustable Output Voltage, Regulator (Tape and Reel) (QFN) Extended Temperature, 16LD QFN Package Output Voltage 150 = 1.5V 180 = 1.8V 250 = 2.5V 330 = 3.3V 500 = 5.0V ADJ = Adjustable Temperature Range: E = -40°C to +125°C Package: NG = Plastic Quad Flat, No Lead Package (3x3x0.9mm Body) (QFN), 16-lead 2011-2016 Microchip Technology Inc. DS20002284B-page 29
MCP16323 NOTES: DS20002284B-page 30 2011-2016 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, AnyRate, and may be superseded by updates. It is your responsibility to dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, ensure that your application meets with your specifications. KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST, MICROCHIP MAKES NO REPRESENTATIONS OR MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, WARRANTIES OF ANY KIND WHETHER EXPRESS OR RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O IMPLIED, WRITTEN OR ORAL, STATUTORY OR are registered trademarks of Microchip Technology OTHERWISE, RELATED TO THE INFORMATION, Incorporated in the U.S.A. and other countries. INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR ClockWorks, The Embedded Control Solutions Company, FITNESS FOR PURPOSE. Microchip disclaims all liability ETHERSYNCH, Hyper Speed Control, HyperLight Load, arising from this information and its use. Use of Microchip IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are devices in life support and/or safety applications is entirely at registered trademarks of Microchip Technology Incorporated the buyer’s risk, and the buyer agrees to defend, indemnify and in the U.S.A. hold harmless Microchip from any and all damages, claims, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, suits, or expenses resulting from such use. No licenses are BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, conveyed, implicitly or otherwise, under any Microchip dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, intellectual property rights unless otherwise stated. EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker, Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Silicon Storage Technology is a registered trademark of Tempe, Arizona; Gresham, Oregon and design centers in California Microchip Technology Inc. in other countries. and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping GestIC is a registered trademarks of Microchip Technology devices, Serial EEPROMs, microperipherals, nonvolatile memory and Germany II GmbH & Co. KG, a subsidiary of Microchip analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. QUALITY MANAGEMENT SYSTEM © 2011-2016, Microchip Technology Incorporated, Printed in CERTIFIED BY DNV the U.S.A., All Rights Reserved. ISBN: 978-1-5224-0657-0 == ISO/TS 16949 == 2011-2016 Microchip Technology Inc. DS20002284B-page 31
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