MCC 72 MCD 72 Thyristor Modules I = 2x180 A TRMS Thyristor/Diode Modules I = 2x115 A TAVM V = 800-1800 V RRM V V Type TO-240 AA 6 RSM RRM 3 7 V V 2 4 DSM DRM 1 5 V V Version 1 B 8 B Version 1 B 8 B 900 800 MCC 72-08 io1 B /io8 B MCD 72-08 io1 B /io8 B 1300 1200 MCC 72-12 io1 B /io8 B MCD 72-12 io1 B /io8 B 1500 1400 MCC 72-14 io1 B /io8 B MCD 72-14 io1 B /io8 B 1700 1600 MCC 72-16 io1 B /io8 B MCD 72-16 io1 B /io8 B 1900 1800 MCC 72-18 io1 B /io8 B MCD 72-18 io1 B /io8 B Symbol Conditions Maximum Ratings 3 6 7 1 5 4 2 I , I T = T 180 A TRMS FRMS VJ VJM MCC I , I T = 63°C; 180° sine 115 A TAVM FAVM C Version 1 B T = 85°C; 180° sine 85 A C I , I T = 45°C t = 10 ms (50 Hz), sine 1700 A 3 1 5 4 2 TSM FSM VJ V = 0 t = 8.3 ms(60 Hz), sine 1800 A R MCD T = T t = 10 ms (50 Hz), sine 1540 A VJ VJM Version 1 B V = 0 t = 8.3 ms(60 Hz), sine 1640 A R ∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 14 450 A2s 3 6 1 5 2 V = 0 t = 8.3 ms(60 Hz), sine 13 500 A2s R MCC TVJ = TVJM t = 10 ms (50 Hz), sine 11 850 A2s Version 8 B V = 0 t = 8.3 ms(60 Hz), sine 11 300 A2s R (di/dt) T = T repetitive, I = 250 A 150 A/µs 3 1 5 2 cr VJ VJM T f = 50 Hz; t =200 µs P MCD V = 2/ V Version 8 B D 3 DRM I = 0.45 A non repetitive, I = I 500 A/µs G T TAVM diG/dt = 0.45 A/µs Features (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs (cid:129)International standard package, RGK = ∞; method 1 (linear voltage rise) JEDEC TO-240 AA PGM TVJ = TVJM; tP = 30 µs 10 W (cid:127)Direct copper bonded Al2O3 -ceramic I = I ; t = 300 µs 5 W base plate T TAVM P (cid:127)Planar passivated chips P 0.5 W GAV (cid:127)Isolation voltage 3600 V~ V 10 V (cid:127)UL registered, E 72873 RGM (cid:127)Gate-cathode twin pins for version 1B T -40...+125 °C VJ T 125 °C VJM Applications T -40...+125 °C stg (cid:127)DC motor control V 50/60 Hz, RMS; t = 1 min 3000 V~ ISOL (cid:127)Softstart AC motor controller I ≤ 1 mA; t = 1 s 3600 V~ ISOL (cid:127)Light, heat and temperature control M Mounting torque (M5) 2.5-4.0/22-35 Nm/lb.in. d Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in. Advantages Weight Typical including screws 90 g (cid:127)Space and weight savings (cid:127)Simple mounting with two screws Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. (cid:127)Improved temperature and power cycling (cid:127)Reduced protection circuits 9 IXYS reserves the right to change limits, test conditions and dimensions 41 © 2004 IXYS All rights reserved 1 - 4

MCC 72 MCD 72 Symbol Conditions Characteristic Values I , I T = T ; V = V ; V = V 5 mA RRM DRM VJ VJM R RRM D DRM V /V I /I = 300 A; T = 25°C 1.74 V T F T F VJ V For power-loss calculations only (T = 125°C) 0.85 V T0 VJ r 3.2 mΩ T V V = 6 V; T = 25°C 2.5 V GT D VJ T = -40°C 2.6 V VJ I V = 6 V; T = 25°C 150 mA GT D VJ T = -40°C 200 mA VJ V T = T ; V = 2/ V 0.2 V GD VJ VJM D 3 DRM I 10 mA GD I T = 25°C; t = 10 µs; V = 6 V 450 mA L VJ P D I = 0.45 A; di /dt = 0.45 A/µs G G I T = 25°C; V = 6 V; R = ∞ 200 mA H VJ D GK t T = 25°C; V = ½ V 2 µs gd VJ D DRM I = 0.45 A; di /dt = 0.45 A/µs G G t T = T ; I = 150 A, t = 200 µs; -di/dt = 10 A/µs typ. 185 µs Fig. 1 Gate trigger characteristics q VJ VJM T P V = 100 V; dv/dt = 20 V/µs; V = 2/ V R D 3 DRM Q T = T ; I /I = 50 A, -di/dt = 6 A/µs 170 µC S VJ VJM T F I 45 A RM R per thyristor/diode; DC current 0.3 K/W thJC per module other values 0.15 K/W R per thyristor/diode; DC current see Fig. 8/9 0.5 K/W thJK per module 0.25 K/W d Creepage distance on surface 12.7 mm S d Strike distance through air 9.6 mm A a Maximum allowable acceleration 50 m/s2 Optional accessories for module-type MCC 72 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L(L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R(R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC / MCD Version 1 B MCC Version 8 B MCD Version 8 B 9 IXYS reserves the right to change limits, test conditions and dimensions 41 2 - 4 © 2004 IXYS All rights reserved

MCC 72 MCD 72 Fig. 3 Surge overload current Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current I , I : Crest value, t: duration at case temperature TSM FSM Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 9 IXYS reserves the right to change limits, test conditions and dimensions 41 © 2004 IXYS All rights reserved 3 - 4

MCC 72 MCD 72 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) R for various conduction angles d: thJC d R (K/W) thJC DC 0.3 180° 0.31 120° 0.33 60° 0.35 30° 0.37 Constants for Z calculation: thJC i R (K/W) t (s) thi i 1 0.008 0.0019 2 0.054 0.047 3 0.238 0.3 Fig. 9 Transient thermal impedance junction toheatsink(perthyristor or diode) R for various conduction angles d: thJK d R (K/W) thJK DC 0.5 180° 0.51 120° 0.53 60° 0.55 30° 0.57 Constants for Z calculation: thJK i R (K/W) t (s) thi i 1 0.008 0.0019 2 0.054 0.047 3 0.238 0.3 4 0.2 1.25 9 IXYS reserves the right to change limits, test conditions and dimensions 41 4 - 4 © 2004 IXYS All rights reserved