MCD56-12io8B = Thyristor \ Diode Module V 2x1200V RRM = I 60A TAV = V 1.24V T Phase leg Part number MCD56-12io8B Backside: isolated 3 1 5 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Isolation Voltage: 3 6 0 0 V~ ● Planar passivated chip ● Softstart AC motor control ● Industry standard outline ● Long-term stability ● DC Motor control ● RoHS compliant ● Direct Copper Bonded Al2O3-ceramic ● Power converter ● Soldering pins for PCB mounting ● AC power control ● Base plate: DCB ceramic ● Lighting and temperature control ● Reduced weight ● Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MCD56-12io8B Rectifier Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse/forward blocking voltage T = 25°C 1300 V RSM/DSM VJ V max. repetitive reverse/forward blocking voltage T = 25°C 1200 V RRM/DRM VJ I reverse current, drain current V = 1 2 0 0 V T = 25°C 200 µA R/D R/D VJ V = 1 2 0 0 V T = 1 2 5 °C 5 mA R/D VJ V forward voltage drop I = 1 0 0 A T = 25°C 1.26 V T T VJ I = 2 0 0 A 1.57 V T I = 1 0 0 A T = 1 2 5 °C 1.24 V T VJ I = 2 0 0 A 1.62 V T I average forward current T = 8 5 °C T = 1 2 5 °C 60 A TAV C VJ I RMS forward current 180° sine 94 A T(RMS) V threshold voltage T = 1 2 5 °C 0.85 V T0 VJ for power loss calculation only r slope resistance 3.7 mΩ T R thermal resistance junction to case 0.45 K/W thJC R thermal resistance case to heatsink 0.20 K/W thCH P total power dissipation T = 25°C 222 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C 1.50 kA TSM VJ t = 8,3 ms; (60 Hz), sine V = 0 V 1.62 kA R t = 10 ms; (50 Hz), sine T = 1 2 5 °C 1.28 kA VJ t = 8,3 ms; (60 Hz), sine V = 0 V 1.38 kA R I²t value for fusing t = 10 ms; (50 Hz), sine T = 45°C 11.3 kA²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 10.9 kA²s R t = 10 ms; (50 Hz), sine T = 1 2 5 °C 8.13 kA²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 7.87 kA²s R C junction capacitance V = 4 0 0 V f = 1 MHz T = 25°C 74 pF J R VJ P max. gate power dissipation t = 30 µs T = 1 2 5 °C 10 W GM P C t = 300µs 5 W P P average gate power dissipation 0.5 W GAV (di/dt) critical rate of rise of current T =125°C; f = 50 Hz repetitive, I = 150A 150 A/µs cr VJ T t = 2 0 0 µs;di /dt=0.45 A/µs; P G I = 0.45A;V = ⅔ V non-repet., I = 60A 500 A/µs G DRM T (dv/dt) critical rate of rise of voltage V = ⅔ V T = 125°C 1000 V/µs cr DRM VJ R = ∞; method 1 (linear voltage rise) GK V gate trigger voltage V = 6 V T = 25°C 1.5 V GT D VJ T = -40°C 1.6 V VJ I gate trigger current V = 6 V T = 25°C 100 mA GT D VJ T = -40°C 200 mA VJ V gate non-trigger voltage V = ⅔ V T =125°C 0.2 V GD D DRM VJ I gate non-trigger current 10 mA GD I latching current t = 10 µs T = 25°C 450 mA L p VJ I = 0.45A; di /dt = 0.45A/µs G G I holding current V = 6 V R = ∞ T = 25°C 200 mA H D GK VJ t gate controlled delay time V = ½ V T = 25°C 2 µs gd D DRM VJ I = 0.45A; di /dt = 0.45A/µs G G t turn-off time V =100V; I =150A;V = ⅔ V T =100°C 150 µs q R T DRM VJ di/dt = 10A/µs dv/dt = 20V/µs t =200µs p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MCD56-12io8B Package TO-240AA Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 200 A RMS T virtual junction temperature -40 125 °C VJ T operation temperature -40 100 °C op T storage temperature -40 125 °C stg Weight 81 g M mounting torque 2.5 4 Nm D M terminal torque 2.5 4 Nm T d terminal to terminal 13.0 9.7 mm Spp/App creepage distance on surface | striking distance through air d terminal to backside 16.0 16.0 mm Spb/Apb V isolation voltage t = 1 second 3600 V ISOL 50/60 Hz, RMS; II S O L ≤ 1 mA t = 1 minute 3000 V Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard MCD56-12io8B MCD56-12io8B Box 36 457701 Similar Part Package Voltage class MCMA65PD1200TB TO-240AA-1B 1200 MCMA85PD1200TB TO-240AA-1B 1200 Equivalent Circuits for Simulation * on die level T V J =125°C I V R Thyristor 0 0 V threshold voltage 0.85 V 0 max R slope resistance * 2.5 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MCD56-12io8B Outlines TO-240AA 3 1 5 2 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MCD56-12io8B Thyristor 1500 105 120 50 Hz, 80% VRRM VR = 0 V D18C0° sin 100 120° 60° 30° 1000 80 I2t I I TSM TAVM I FSM TVJ = 45°C 104 T = 45°C 60 VJ [A] [A] [A2s] 500 TVJ = 125°C 40 T =125°C VJ 20 0 103 0 10-3 10-2 10-1 100 101 1 2 3 6 8 10 0 50 100 150 t [s] t [ms] T [°C] C Fig. 1 Surge overload current Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current I , I : Crest value, t: duration at case temperature TSM FSM 150 10 RthJA [K/W] 1:IGT,TVJ=125(cid:176)C 0.8 2:IGT,TVJ= 25(cid:176)C 3:I ,T =-40(cid:176)C 1 GT VJ 1.2 100 1.5 V G P 2 3 T 1 2 5 6 2.5 [W] 1 4 3 [V] 50 DC 180° sin 4 120° 60° 4:P =0.5W 30° GAV I ,T =125(cid:176)C 5:PGM= 5W GD VJ 6:P =10W GM 0 0.1 0 20 40 60 80 0 50 100 150 100 101 102 103 104 I , I [A] T [°C] I [mA] TAVM FAVM A G Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode) Fig. 5 Gate trigger charact. 600 1000 R [K/W] T =25(cid:176)C thKA VJ 0.1 500 0.15 0.2 typ. Limit 400 100 0.25 t Ptot 0.3 gd 300 [W] 0.4 [µs] 0.5 200 10 0.6 Circuit B6 3x MCC56 or 100 3x MCD56 0 1 0 50 100 150 0 50 100 150 10 100 1000 I [A] T [°C] I [mA] dAVM A G Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current Fig. 7 Gate trigger delay time and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

MCD56-12io8B Rectifier 600 RthJA [KW] 0.1 500 0.15 0.2 400 0.25 P tot 0.3 300 0.4 [W] Circuit 0.5 200 W3 0.6 3xMCC56 or 3x MCD56 100 0 0 50 100 0 50 100 150 I [A] T [°C] RMS A Fig. 8 Three phaseAC-controller: Power dissipation vs. RMS output current and ambient temperature 0.6 R for various conduction angles d: thJC 30° 0.5 60° DC 0.450 120° 180° 0.470 180° 0.4 120° 0.490 DC 60° 0.505 0.3 30° 0.520 Constants for Z calculation: 0.2 thJC 1 0.014 0.0150 0.1 2 0.026 0.0095 3 0.410 0.1750 0 10-3 10-2 10-1 100 101 102 103 Fig. 9 Transient thermal impedance junction to case (per thyristor) 0.8 R for various conduction angles d: thJK 30° 60° DC 0.650 120° 180° 0.670 0.6 180° 120° 0.690 DC 60° 0.705 30° 0.720 0.4 Constants for Z calculation: thJK 0.2 1 0.014 0.0150 2 0.026 0.0095 3 0.410 0.1750 4 0.200 0.6700 0 10-3 10-2 10-1 100 101 102 103 Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b ©2016 IXYS all rights reserved

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