MC74HC1G02 Single 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G02 output drive current is 1/2 compared to www.onsemi.com MC74HC series. Features MARKING • DIAGRAMS High Speed: t = 7 ns (Typ) at V = 5 V PD CC • Low Power Dissipation: I = 1 (cid:2)A (Max) at T = 25°C 5 CC A • High Noise Immunity SC−88A M XX M(cid:2) (cid:2) • DF SUFFIX Balanced Propagation Delays (t = t ) pLH pHL • CASE 419A 1 Symmetrical Output Impedance (I = I = 2 mA) OH OL • Chip Complexity: < 100 FETs • NLV Prefix for Automotive and Other Applications Requiring 5 Unique Site and Control Change Requirements; AEC−Q100 XX M(cid:2) Qualified and PPAP Capable TSOP−5 (cid:2) • DT SUFFIX These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 CASE 483 Compliant XX = Device Code M = Date Code* (cid:2) = Pb−Free Package B 1 5 VCC (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. A 2 5 GND 3 4 Y 1 XXX M(cid:2) SC−74A (cid:2) DBV SUFFIX Figure 1. Pinout CASE 318BQ XXX = Specific Device Code IN A ≥1 OUT Y M = Date Code IN B (cid:2) = Pb−Free Package Figure 2. Logic Symbol (Note: Microdot may be in either location) PIN ASSIGNMENT 1 B FUNCTION TABLE 2 A Inputs Output 3 GND A B Y 4 Y L L H 5 VCC L H L H L L H H L ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2018 − Rev. 10 MC74HC1G02/D

MC74HC1G02 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage SC−88A (NLV), TSOP−5 −0.5 to +7.0 V SC−88A, SC−74A −0.5 to +6.5 VIN DC Input Voltage −0.5 to VCC +0.5 V VOUT DC Output Voltage −0.5 to VCC +0.5 V IIK DC Input Diode Current ±20 mA IOK DC Output Diode Current ±20 mA IOUT DC Output Source/Sink Current ±12.5 mA ICC or IGND DC Supply Current per Supply Pin or Ground Pin ±25 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias +150 °C (cid:3)JA Thermal Resistance (Note 1) SC70−5/SC−88A/SOT−353 659 °C/W SOT23−5/TSOP−5/SC59−5 555 SC−74A 555 PD Power Dissipation in Still Air at 85°C SC70−5/SC−88A/SOT−353 190 mW SOT23−5/TSOP−5/SC59−5 225 SC−74A 225 MSL Moisture Sensitivity Level 1 FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in VESD ESD Withstand Voltage (Note 2) Human Body Model 2000 V Charged Device Model 1000 ILATCHUP Latchup Performance (Note 3) SC−88A (NLV), SOT−23 ±500 mA SC−88A, SC−74A ±100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 20 ounce copper trace with no air flow. 2. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to JESD22−C101−F. JEDEC recommends that ESD qualification to EIA/JESD22−A115A (Machine Model) be discontinued per JEDEC/JEP172A. 3. Tested to EIA/JESD78 Class II. www.onsemi.com 2

MC74HC1G02 RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage 2.0 6.0 V VIN DC Input Voltage 0.0 VCC V VOUT DC Output Voltage 0.0 VCC V TA Operating Temperature Range −55 +125 °C tr , tf Input Rise and Fall Time SC−88A (NLV), TSOP−5 ns/V VCC = 2.0 V 0 1000 VCC = 3.0 V 0 600 VCC = 4.5 V 0 500 VCC = 6.0 V 0 400 Input Rise and Fall Time SC−88A, SC−74A VCC = 1.65 V to 1.95 V 0 20 VCC = 2.3 V to 2.7 V 0 20 VCC = 3.0 V to 3.6 V 0 10 VCC = 4.5 V to 6.0 V 0 5 Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS VCC TA = 25(cid:2)C −40°C ≤ TA ≤ 85°C −55°C ≤ TA ≤ 125°C Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit VIH High−Level Input 2.0 1.5 − − 1.5 − 1.5 − V Voltage 3.0 2.1 − − 2.1 − 2.1 − 4.5 3.15 − − 3.15 − 3.15 − 6.0 4.20 − − 4.20 − 4.20 − VIL Low−Level Input 2.0 − − 0.5 − 0.5 − 0.5 V Voltage 3.0 − − 0.9 − 0.9 − 0.9 4.5 − − 1.35 − 1.35 − 1.35 6.0 − − 1.80 − 1.80 − 1.80 VOH High−Level Output VIN = VIH or VIL 2.0 1.9 2.0 − 1.9 − 1.9 − V Voltage IOH = −20 (cid:2)A 3.0 2.9 3.0 − 2.9 − 2.9 − 4.5 4.4 4.5 − 4.4 − 4.4 − 6.0 5.9 6.0 − 5.9 − 5.9 − VIN = VIH or VIL IOH = −2 mA 4.5 4.18 4.31 − 4.13 − 4.08 − IOH = −2.6 mA 6.0 5.68 5.80 − 5.63 − 5.58 − VOL Low−Level Output VIN = VIH or VIL 2.0 − 0.0 0.1 − 0.1 − 0.1 V Voltage IOL = 20 (cid:2)A 3.0 − 0.0 0.1 − 0.1 − 0.1 4.5 − 0.0 0.1 − 0.1 − 0.1 6.0 − 0.0 0.1 − 0.1 − 0.1 VIN = VIH or VIL IOL = 2 mA 4.5 − 0.17 0.26 − 0.33 − 0.40 IOL = 2.6 mA 6.0 − 0.18 0.26 − 0.33 − 0.40 IIN Input Leakage VIN = 6.0 V or 6.0 − − (cid:2)0.1 − (cid:2)1.0 − (cid:2)1.0 (cid:2)A Current GND * ICC Quiescent Supply VIN = VCC or 6.0 − − 1.0 − 10 − 40 (cid:2)A Current GND *Guaranteed by design. www.onsemi.com 3

MC74HC1G02 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns) TA = 25(cid:2)C −40°C ≤ TA ≤ 85°C −55°C ≤ TA ≤ 125°C Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit tPLH, Propagation Delay, VCC = 5.0 V CL = 15 pF − 3.5 15 − 20 − 25 ns tPHL Input A or B to Y VCC = 2.0 V CL = 50 pF − 20 100 − 125 − 155 VCC = 3.0 V − 11 27 − 35 − 90 VCC = 4.5 V − 8 20 − 25 − 35 VCC = 6.0 V − 7 17 − 21 − 26 tTLH, Output Transition VCC = 5.0 V CL = 15 pF − 3 10 − 15 − 20 ns tTHL Time VCC = 2.0 V CL = 50 pF − 25 125 − 155 − 200 VCC = 3.0 V − 16 35 − 45 − 60 VCC = 4.5 V − 11 25 − 31 − 38 VCC = 6.0 V − 9 21 − 26 − 32 CIN Input Capacitance − 5 10 − 10 − 10 pF Typical @ 25(cid:2)C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 4) 10 pF 4. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD (cid:2) VCC (cid:2) fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD (cid:2) VCC2 (cid:2) fin + ICC (cid:2) VCC. www.onsemi.com 4

MC74HC1G02 OPEN Switch VCC GND Test Position CL, pF RL, (cid:2) tPLH / tPHL Open X tTLH / tTHL Open X RL (Note 5) See AC Characteristics Table tPLZ / tPZL VCC 1 k DUT OUTPUT tPHZ / tPZH GND 1 k X − Don’t Care RT CL* *CL includes probe and jig capacitance RT is ZOUT of pulse generator (typically 50 W) f = 1 MHz Figure 3. Test Circuit V t = 6 ns t = 6 ns CC r f V 90% 90% CC INPUT Vmi Vmi Vmi Vmi INPUT GND 10% 10% GND t t PZL PLZ ~ V t t CC PHL t PLH TLH V VH VH OH OUTPUT Vmo OUTPUT Vmo Vmo VOL + VY V OL VL VL V tTHL OL tPZH tPHZ V tPLH tPHL VOH - VOYH V tTLH VH VH OH OUTPUT Vmo OUTPUT Vmo Vmo ~0 V VL VL V t OL THL Figure 4. Switching Waveforms Vmo, V VCC, V Vmi, V tPLH, tPHL tPZL, tPLZ, tPZH, tPHZ VL, V VH, V VY, V 3.0 to 3.6 VCC/2 (VOH − VOL)/2 VCC/2 VOL + 0.1 (VOH − VOL) VOL + 0.9 (VOH − VOL) 0.3 4.5 to 5.5 VCC/2 (VOH − VOL)/2 VCC/2 VOL + 0.1 (VOH − VOL) VOL + 0.9 (VOH − VOL) 0.3 5. tTLH and tTHL are measured from 10% to 90% of (VOH − VOL), and 90% to 10% of (VOH − VOL), respectively. www.onsemi.com 5

MC74HC1G02 ORDERING INFORMATION Pin 1 Orientation Device Packages Specific Device Code (See below) Shipping† MC74HC1G02DFT2G SC−88A H3 Q4 3000 / Tape & Reel NLVHC1G02DFT2G* SC−88A H3 Q4 3000 / Tape & Reel MC74HC1G02DTT1G TSOP−5 H3 Q4 3000 / Tape & Reel MC74HC1G02DBVT1G SC−74A TBD Q4 3000 / Tape & Reel (In Development) †For complete information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. Pin 1 Orientation in Tape and Reel www.onsemi.com 6

MC74HC1G02 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING G PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE 5 4 MOLD FLASH, PROTRUSIONS, OR GATE BURRS. S −B− INCHES MILLIMETERS 1 2 3 DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 D 5 PL 0.2 (0.008) M B M G 0.026 BSC 0.65 BSC H --- 0.004 --- 0.10 J 0.004 0.010 0.10 0.25 N K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 J C K H SOLDER FOOTPRINT 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 (cid:3) (cid:4) 0.0748 mm SCALE 20:1 inches www.onsemi.com 7

MC74HC1G02 PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME NOTE 5 D5X Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.20 C A B 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH 2X 0.10 T THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. M 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD 2X 0.20 T B 5 4 S FFLLAASSHH,, PPRROOTTRRUUSSIIOONNSS,, OORR GGAATTEE BBUURRRRSS. SMHOALLDL NOT 1 2 3 EXCEED 0.15 PER SIDE. DIMENSION A. K 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL B G DETAIL Z TTRRIIMMMMEEDD LLEEAADD INSO ATL TLOO WEXETDE INND T HMIOS RLEO CTHATAINO N0..2 A A FROM BODY. MILLIMETERS TOP VIEW DIM MIN MAX A 2.85 3.15 B 1.35 1.65 DETAIL Z C 0.90 1.10 J D 0.25 0.50 C G 0.95 BSC H 0.01 0.10 0.05 J 0.10 0.26 H C SPELAATNIENG END VIEW MK 0.02 0(cid:3) 010.6 (cid:3) 0 SIDE VIEW S 2.50 3.00 SOLDERING FOOTPRINT* 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.7 (cid:3) (cid:4) 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8

MC74HC1G02 PACKAGE DIMENSIONS SC−74A CASE 318BQ ISSUE B 5Xb NOTES: 0.20 C A B 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. M 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH 5 4 THICKNESS. MINIMUM LEAD THICKNESS IS THE E1 E MINIMUM THICKNESS OF BASE MATERIAL. 1 2 3 0.05 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD A1 FLASH, PROTRUSIONS, OR GATE BURRS. MOLD L B FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT e DETAIL A EXCEED 0.15 PER SIDE. A D MILLIMETERS DIM MIN MAX TOP VIEW A 0.90 1.10 A1 0.01 0.10 A DETAIL A b 0.25 0.50 c 0.10 0.26 D 2.85 3.15 E 2.50 3.00 E1 1.35 1.65 c SIDE VIEW C SPELAATNIENG END VIEW Le 0.02.095 BS0C.60 M 0 (cid:3) 10 (cid:3) RECOMMENDED SOLDERING FOOTPRINT* 0.95 PITCH 2.40 5X 1.00 5X 0.70 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com MC74HC1G02/D 9

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