MBRF20100CTG Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as www.onsemi.com rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER Features • 20 AMPERES, 100 VOLTS Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction 1 • 2 High Junction Temperature Capability • 3 High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection • Epoxy Meets UL 94 V−0 @ 0.125 in • Electrically Isolated. No Isolation Hardware Required. • These are Pb−Free Devices TO−220 FULLPAK(cid:2) CASE 221AH Mechanical Characteristics: • Case: Epoxy, Molded 1 • Weight: 1.9 Grams (Approximately) 2 3 • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: ORDERING AND MARKING INFORMATION 260°C Max. for 10 Seconds See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 − Rev. 10 MBRF20100CT/D

MBRF20100CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 10 A (Rated VR), TC = 133°C Total Device 20 Peak Repetitive Forward Current IFRM 20 A (Rated VR, Square Wave, 20 kHz), TC = 133°C Non−repetitive Peak Surge Current IFSM 150 A (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 (cid:2)s, 1.0 kHz) IRRM 0.5 A Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10000 V/(cid:2)s RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Viso1 4500 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Leg) Rating Symbol Value Unit Maximum Thermal Resistance, Junction to Case R(cid:3)JC 3.5 °C/W Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 3) vF V (iF = 10 Amp, TC = 25°C) 0.85 (iF = 10 Amp, TC = 125°C) 0.75 (iF = 20 Amp, TC = 25°C) 0.95 (iF = 20 Amp, TC = 125°C) 0.85 Maximum Instantaneous Reverse Current (Note 3) iR mA (Rated DC Voltage, TC = 25°C) 0.15 (Rated DC Voltage, TC = 125°C) 150 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R(cid:3)JA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤ 2.0%. S) P 50 M T (A 150°C TJ = 150°C RD CURREN 1200 100°C RENT (mA) 10 TTJJ == 112050°°CC A R 1.0 W 5.0 U OR TJ = 25°C E C F 3.0 S NTANEOUS 1.0 I, REVERR0.1 A T , INSF0.5 0.01 TJ = 25°C i 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode www.onsemi.com 2

MBRF20100CTG MARKING DIAGRAMS AYWW B20100G AKA TO−220 B20100 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package AKA = Polarity Designator ORDERING INFORMATION Device Package Shipping† MBRF20100CTG TO−220 50 Units / Rail (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3

MBRF20100CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A B SEATING NOTES: PLANE 1.DIMENSIONING AND TOLERANCING PER ASME E Y14.5M, 1994. A E/2 P 2.CONTROLLING DIMENSION: MILLIMETERS. 0.14 M B A M H1 A1 34..CDOIMNETNOSUIORN USN DC OANNTDR EO DLLOE NDO INT ITNHCISLU ADREE MA.OLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE Q MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. D C 5.DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 1 2 3 NOTE 3 6.CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. L L1 MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 3Xb c A2 2.50 2.90 3X b2 0.25 M B A M C A2 bb2 01..5140 01..8440 c 0.49 0.79 e SIDE VIEW D 14.70 15.30 FRONT VIEW E 9.70 10.30 e 2.54 BSC H1 6.60 7.10 L 12.50 14.73 L1 --- 2.80 P 3.00 3.40 SECTION D−D Q 2.80 3.20 A NOTE 6 NOTE 6 H1 D D A SECTION A−A ALTERNATE CONSTRUCTION FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com MBRF20100CT/D 4

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