MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G Switch-mode Power Rectifier www.onsemi.com 100 V, 20 A SCHOTTKY BARRIER RECTIFIER Features and Benefits 20 AMPERES, 100 VOLTS • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency 1 • High Surge Capacity 2, 4 • 175°C Operating Junction Temperature 3 • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection 4 • NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supply − Output Rectification 1 1 2 2 • Power Management 3 3 • Instrumentation TO−220 TO−220 FULLPAK(cid:2) CASE 221A CASE 221D Mechanical Characteristics: STYLE 6 STYLE 3 • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in 4 • Weight (Approximately): 1 1.9 Grams (TO−220) 2 1.7 Grams (D2PAK) 3 • Finish: All External Surfaces Corrosion Resistant and Terminal D2PAK 3 Leads are Readily Solderable CASE 418B • Lead Temperature for Soldering Purposes: STYLE 3 260°C Max. for 10 Seconds DEVICE MARKING INFORMATION See general marking information in the device marking section on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 − Rev. 12 MBR20H100CT/D

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G AYWW AYWW B20H100G AYWW B20H100G AKA B20H100G AKA AKA TO−220 TO−220 FULLPAK D2PAK 3 A = Assembly Location Y = Year WW = Work Week B20H100= Device Code G = Pb−Free Device AKA = Polarity Designator Figure 1. Marking Diagrams MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VRWM DC Blocking Voltage‘ VR Average Rectified Forward Current IF(AV) A (Rated VR) TC = 162°C 10 Peak Repetitive Forward Current IFRM A (Rated VR, Square Wave, 20 kHz) TC = 160°C 20 Nonrepetitive Peak Surge Current IFSM A (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 250 Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg (cid:2)65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/(cid:2)s Controlled Avalanche Energy (see test conditions in Figures 11 and 12) WAVAL 200 mJ ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R(cid:3)JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance °C/W (MBR20H100CTG, MBRB20H100CTG and NRVBB20H100CTT4G) Junction−to−Case R(cid:3)JC 2.0 Junction−to−Ambient R(cid:3)JA 60 (MBRF20H100CTG) Junction−to−Case R(cid:3)JC 2.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) vF V (IF = 10 A, TC = 25°C) 0.77 (IF = 10 A, TC = 125°C) 0.64 (IF = 20 A, TC = 25°C) 0.88 (IF = 20 A, TC = 125°C) 0.73 Maximum Instantaneous Reverse Current (Note 2) iR mA (Rated DC Voltage, TC = 125°C) 6.0 (Rated DC Voltage, TC = 25°C) 0.0045 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device Order Number Package Shipping† MBR20H100CTG TO−220 50 Units / Rail (Pb−Free) MBRF20H100CTG TO−220FP 50 Units / Rail (Pb−Free) MBRB20H100CTT4G D2PAK 3 800 / Tape & Reel (Pb−Free) NRVBB20H100CTT4G* D2PAK 3 800 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 3

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G S) S) MP100 MP100 A A T ( T ( N N E E RR TJ = 150°C RR TJ = 150°C U 10 U 10 D C TJ = 125°C D C TJ = 125°C R R A A W W FOR 1 TJ = 25°C FOR 1 TJ = 25°C S S U U O O E E N N A A T T N 0.1 N 0.1 TA 0 0.2 0.4 0.6 0.8 1.0 1.2 TA 0 0.2 0.4 0.6 0.8 1.0 1.2 S S , INF VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) , INF VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) I I Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−01 S)1.0E−01 P MPS)1.0E−02 TJ = 150°C T (AM1.0E−02 TJ = 150°C A N T (1.0E−03 RE1.0E−03 TJ = 125°C N R RE1.0E−04 TJ = 125°C CU1.0E−04 R E U S E C1.0E−05 ER1.0E−05 RS EV TJ = 25°C VE1.0E−06 TJ = 25°C M R1.0E−06 E U , RR1.0E−07 XIM1.0E−07 I A 1.0E−08 M1.0E−08 0 20 40 60 80 100, R 0 20 40 60 80 100 I VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current S) 20 16 P N M O ENT (A 15 dc SIPATI 1124 R S R DI SQUARE DC D CU SQUARE WAVE WER TS) 10 ORWAR 10 GE PO(WAT 68 E F 5 ERA 4 G V A A ER , O 2 AV 0 PF 0 , F 100 110 120 130 140 150 160 170 180 0 5 10 15 20 25 I TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 4

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G 10000 TJ = 25°C F) p E ( 1000 C N A T CI A P A 100 C C, 10 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance E 100 C N A D = 0.5 T S SI 10 RE 0.2 AL 0.1 M R 1 0.05 E H T T 0.01 P(pk) N SIE 0.1 t1 N t2 A R SINGLE PULSE DUTY CYCLE, D = t1/t2 T R(t), 00.0.0100001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT, MBRB20H100CT and NRVBB20H100CTT4G E C 10 N A T S SI E R D = 0.5 L 1 A M 0.2 R HE 0.1 T NT 0.1 0.05 P(pk) E SI 0.01 t1 AN t2 R R(t), T 0.01 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case for MBR20H100CT, MBRB20H100CT and NRVBB20H100CTT4G www.onsemi.com 5

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G E 10 C N A T S D = 0.5 SI 1 E 0.2 R AL 0.1 M 0.05 R 0.1 E H 0.01 T T P(pk) N SIE 0.01 t1 N SINGLE PULSE t2 A R DUTY CYCLE, D = t1/t2 T R(t), 0.000.0100001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT +VDD IL 10 mH COIL VD BVDUT MERCURY ID SWITCH IL ID DUT S1 VDD t0 t1 t2 t Figure 11. Test Circuit Figure 12. Current−Voltage Waveforms The unclamped inductive switching circuit shown in elements are small Equation (1) approximates the total Figure 11 was used to demonstrate the controlled avalanche energy transferred to the diode. It can be seen from this capability of this device. A mercury switch was used instead equation that if the V voltage is low compared to the DD of an electronic switch to simulate a noisy environment breakdown voltage of the device, the amount of energy when the switch was being opened. contributed by the supply during breakdown is small and the When S is closed at t the current in the inductor I ramps total energy can be assumed to be nearly equal to the energy 1 0 L up linearly; and energy is stored in the coil. At t the switch stored in the coil during the time when S was closed, 1 1 is opened and the voltage across the diode under test begins Equation (2). to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at EQUATION (1): (cid:4) (cid:5) BV and the diode begins to conduct the full load current whiDchU Tnow starts to decay linearly through the diode, and W (cid:3) 1LI2 BVDUT AVAL 2 LPK BV °V goes to zero at t2. DUT DD By solving the loop equation at the point in time when S 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is EQUATION (2): equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in WAVAL(cid:3) 12LI2LPK breakdown (from t to t ) minus any losses due to finite 1 2 component resistances. Assuming the component resistive www.onsemi.com 6

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: C 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. V 3. 418B−01 THRU 418B−03 OBSOLETE, −B− NEW STANDARD 418B−04. W 4 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 A C 0.160 0.190 4.06 4.83 S D 0.020 0.035 0.51 0.89 1 2 3 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC −T− H 0.080 0.110 2.03 2.79 K J 0.018 0.025 0.46 0.64 SEATING W PLANE G J KL 00..009502 00..011702 21..2392 21..7893 M 0.280 0.320 7.11 8.13 H N 0.197 REF 5.00 REF D3 PL P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF 0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 3: VARIABLE PIN 1.ANODE CONFIGURATION 2.CATHODE ZONE N P 3.ANODE R 4.CATHODE U L L L M M M F F F VIEW W−W VIEW W−W VIEW W−W 1 2 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 7

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −T− SPELAATNIENG 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL B F C BODY AND LEAD IRREGULARITIES ARE T S ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 Q A B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 1 2 3 U D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 H G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 K J 0.014 0.024 0.36 0.61 Z K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 L R Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 V J S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 G U 0.000 0.050 0.00 1.27 D V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 N STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE www.onsemi.com 8

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K NOTES: −T− SPELAATNIENG 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −B− C 2. CONTROLLING DIMENSION: INCH F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW S STANDARD 221D-03. Q U INCHES MILLIMETERS DIM MIN MAX MIN MAX A A 0.617 0.635 15.67 16.12 B 0.392 0.419 9.96 10.63 1 2 3 C 0.177 0.193 4.50 4.90 D 0.024 0.039 0.60 1.00 H F 0.116 0.129 2.95 3.28 K −Y− G 0.100 BSC 2.54 BSC H 0.118 0.135 3.00 3.43 J 0.018 0.025 0.45 0.63 K 0.503 0.541 12.78 13.73 G J L 0.048 0.058 1.23 1.47 N 0.200 BSC 5.08 BSC N R Q 0.122 0.138 3.10 3.50 L R 0.099 0.117 2.51 2.96 S 0.092 0.113 2.34 2.87 D3 PL U 0.239 0.271 6.06 6.88 0.25 (0.010) M B M Y STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com MBR20H100CT/D 9

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MBRB20H100CTT4G