MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier FEATURES TO-220AC ITO-220AC • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation 2 2 • Solder bath temperature 275 °C maximum, 10 s, per MBR745 1 JESD 22-B106 1 MBR760 MBRF745 • Material categorization: for definitions of compliance PIN 1 please see www.vishay.com/doc?99912 PIN 1 PIN 2 CASE PIN 2 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AC, ITO-220AC I 7.5 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V, 60 V RRM Base P/N-E3 - RoHS-compliant, commercial grade I 150 A FSM Terminals: matte tin plated leads, solderable per VF 0.57 V, 0.65 V J-STD-002 and JESD 22-B102 T max. 150 °C E3 suffix meets JESD 201 class 1A whisker test J Package TO-220AC, ITO-220AC Polarity: as marked Diode variations Single Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 °C unless otherwise noted) C PARAMETER SYMBOL MBR745 MBR760 UNIT Maximum repetitive peak reverse voltage V 45 60 RRM Working peak reverse voltage V 45 60 V RWM Maximum DC blocking voltage V 45 60 DC Maximum average forward rectified current (fig. 1) I 7.5 F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed I 150 A on rated load FSM Peak repetitive reverse surge current at t = 2.0 μs, 1 kHz I 1.0 0.5 p RRM Voltage rate of change (rated V ) dV/dt 10 000 R Operating junction temperature range T -65 to +150 J °C Operating storage temperature range T -65 to +175 STG Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 27-Nov-17 1 Document Number: 88680 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MBR745 MBR760 UNIT I = 7.5 A T = 25 °C - 0.75 F C I = 7.5 A T = 125 °C 0.57 0.65 F C Maximum instantaneous forward voltage V (1) V F I = 15 A T = 25 °C 0.84 - F C I = 15 A T = 125 °C 0.72 - F C Maximum reverse current at  TC = 25 °C 0.1 0.5 I (2) Rated V mA DC blocking voltage R R T = 125 °C 15 50 C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  40 ms THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF UNIT Typical thermal resistance from junction to case R 3.0 5.0 °C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR745-E3/45 (1) 1.80 45 50/tube Tube ITO-220AC MBRF745-E3/45 1.94 45 50/tube Tube Note (1) 60 V device available in TO-220AC package only Revision: 27-Nov-17 2 Document Number: 88680 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) C 10 100 Resistive or Inductive Load A) MBR745 m MBR760 )A (ntreurC 68 e Current ( 101 TJ = 125 °C rda vers w e orF 4 s R 0.1 e ou TJ = 75 °C g e raeAv 2 MBR745 stantan 0.01 MBR760 In TJ = 25 °C 0 0.001 0 50 100 150 0 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 175 10 000 TJ = TJ Max. TJ = 25 °C Current (A) 112550 8.3 ms Single Half Sine-Wave )Fp( ecn 1000 fV =si g1 =.0 5 M0 HmzVp-p Surge 100 aticap d aC war 75 no 100 For itcn eak 50 uJ MBR745 P MBR760 25 10 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 100 A) )W Current ( 10 TJ = 125 °C Pulse Width = 300 µs /C°( ecna 10 ard 1 % Duty Cycle dep w T = 25 °C m For 1 J I la s m eou reh 1 n T stanta 0.1 MBR745 tneisn In MBR760 arT 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 27-Nov-17 3 Document Number: 88680 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) DIA. 0.185 (4.70) 0.360 (9.14) 0.148 (3.74) DIA. 0.175 (4.44) 0.055 (1.39) 0.113 (2.87) 0.045 (1.14) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.603 (15.32) 0.635 (16.13) 0.573 (14.55) 0.350 (8.89) 0.625 (15.87) 0.330 (8.38) PIN 1 2 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.110 (2.79) 0.140 (3.56) 0.100 (2.54) 0.057 (1.45) 0.560 (14.22) PIN1 0.045 (1.14) 0.530 (13.46) PIN2 CASE 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.205 (5.20) 0.014 (0.36) 0.195 (4.95) ITO-220AC 0.404 (10.26) 0.190 (4.83) 0.384 (9.75) 0.170 (4.32) 0.076 (1.93) REF. 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 7° REF. 45° REF. 0.140 (3.56) DIA. 0.135 (3.43) DIA. 0.125 (3.17) DIA. 0.122 (3.08) DIA. 0.600 (15.24) 0.671 (17.04) 0.580 (14.73) PIN 0.651 (16.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 1 2 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.110 (2.79) 0.530 (13.46) 0.057 (1.45) 0.100 (2.54) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.205 (5.21) 0.028 (0.71) 0.195 (4.95) 0.020 (0.51) Revision: 27-Nov-17 4 Document Number: 88680 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: MBRB750/31 MBRB735/31 MBR735 MBR745 MBRB735 MBRB745 VS-MBRB735TRLPBF MBR735/45 MBR735-E3/45 MBR735HE3/45 MBR745/45 MBR745-E3/45 MBR745HE3/45 MBR750/45 MBR750-E3/45 MBR750HE3/45 MBR760/45 MBR760-E3/45 MBR760HE3/45 MBRB735/45 MBRB735/81 MBRB735-E3/45 MBRB735-E3/81 MBRB735HE3/45 MBRB735HE3/81 MBRB745/31 MBRB745/45 MBRB745/81 MBRB745-E3/31 MBRB745-E3/45 MBRB745-E3/81 MBRB745HE3/45 MBRB745HE3/81 MBRB750/45 MBRB750/81 MBRB750- E3/45 MBRB750-E3/81 MBRB750HE3/45 MBRB750HE3/81 MBRB760/31 MBRB760/45 MBRB760/81 MBRB760- E3/31 MBRB760-E3/45 MBRB760-E3/81 MBRB760HE3/45 MBRB760HE3/81 MBRF735-E3/45 MBRF735HE3/45 MBRF750-E3/45 MBRF750HE3/45 MBRF760-E3/45 MBRF760HE3/45 MBRB735TRL MBRB735TRR MBRB745- E3-/81 VS-MBR745PBF VS-MBRB735TRRPBF