图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: MBR735
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

MBR735产品简介:

ICGOO电子元器件商城为您提供MBR735由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供MBR735价格参考以及Fairchild SemiconductorMBR735封装/规格参数等产品信息。 你可以下载MBR735参考资料、Datasheet数据手册功能说明书, 资料中有MBR735详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 35V 7.5A TO220AC肖特基二极管与整流器 7.5 amp Rectifiers Schottky Barrier

产品分类

单二极管/整流器分离式半导体

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,Fairchild Semiconductor MBR735-

数据手册

点击此处下载产品Datasheet

产品型号

MBR735

PCN组件/产地

点击此处下载产品Datasheet

不同If时的电压-正向(Vf)

840mV @ 15A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

100µA @ 35V

二极管类型

肖特基

产品

Schottky Rectifiers

产品种类

肖特基二极管与整流器

供应商器件封装

TO-220AC

其它名称

MBR735-ND
MBR735FS

包装

管件

单位重量

2.160 g

反向恢复时间(trr)

-

商标

Fairchild Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-2

封装/箱体

TO-220-2

峰值反向电压

35 V

工作温度-结

-65°C ~ 150°C

工作温度范围

- 65 C to + 150 C

工厂包装数量

50

技术

Silicon

最大反向漏泄电流

100 uA

最大工作温度

+ 150 C

最大浪涌电流

150 A

最小工作温度

- 65 C

标准包装

50

正向电压下降

0.84 V at 15 A

正向连续电流

7.5 A

热阻

3°C/W Jl

电压-DC反向(Vr)(最大值)

35V

电流-平均整流(Io)

7.5A

系列

MBR735

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

零件号别名

MBR735_NL

推荐商品

型号:TC1265-3.0VOA

品牌:Microchip Technology

产品名称:集成电路(IC)

获取报价

型号:STP18NM80

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:CRCW12102K10FKEAHP

品牌:Vishay Dale

产品名称:电阻器

获取报价

型号:PAC500002509FAC000

品牌:Vishay BC Components

产品名称:电阻器

获取报价

型号:MVT040A0X3-SRPHZ

品牌:None

产品名称:电源 - 板安装

获取报价

型号:IL3685E

品牌:NVE Corp/Isolation Products

产品名称:隔离器

获取报价

型号:AFK227M25F24T-F

品牌:Cornell Dubilier Electronics (CDE)

产品名称:电容器

获取报价

型号:SMA6L15A

品牌:Littelfuse Inc.

产品名称:电路保护

获取报价

样品试用

万种样品免费试用

去申请
MBR735 相关产品

STN1NF10

品牌:STMicroelectronics

价格:

TMP36GT9Z

品牌:Analog Devices Inc.

价格:¥3.48-¥4.35

R5F21246SDFP#V2

品牌:Renesas Electronics America

价格:

FCCB-2

品牌:Essentra Components

价格:¥2.72-¥9.48

B250-13-F

品牌:Diodes Incorporated

价格:¥询价-¥询价

GMF05LC-HSF-GS08

品牌:Vishay Semiconductor Diodes Division

价格:¥4.24-¥4.24

ATS-12F-113-C2-R0

品牌:Advanced Thermal Solutions Inc.

价格:

MAL202134101E3

品牌:Vishay BC Components

价格:

PDF Datasheet 数据手册内容提取

MBR735/MBRB735 MBR745/MBRB745 TechnicalData DataSheetN0720,Rev.A MBR735/MBR745/MBRB735/MBRB745 SCHOTTKY RECTIFIER Features Applications  150℃TJoperation  Switchingpowersupply  Highpurity,hightemperatureepoxyencapsulationfor  Redundantpowersubsystems  enhancedmechanicalstrengthandmoistureresistance  Converters  Lowforwardvoltagedrop  Free-Wheelingdiodes  Highfrequencyoperation  Reversebatteryprotection  Guardringforenhancedruggednessandlongterm reliability   ThisisaPb−FreeDevice   AllSMCpartsaretraceabletothewaferlot   Additionaltestingcanbeoffereduponrequest MBR... MBRB... TO-220AC D2PAK Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage VRRM - 35 (MBR735) WorkingPeakReverseVoltage VRWM V DCBlockingVoltage VR 45 (MBR745) 50%dutycycle@Tc=131°C, AverageRectifiedForwardCurrent IF(AV) rectangularwaveform 7.5 A PeakOneCycleNon-RepetitiveSurge Current IFSM 8.3ms,HalfSinepulse 150 A PeakRepetitiveReverseSurgeCurrent IRRM 2.0μsec1.0KHz 1.0 A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 

MBR735/MBRB735 MBR745/MBRB745 TechnicalData DataSheetN0720,Rev.A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @15A,Pulse,TJ=25℃ 0.55 0.84 V VF2 @7.5A,Pulse,TJ=125℃ 0.39 0.57 V ReverseCurrent* IR1 @VR=ratedVR 0.02 0.1 mA TJ=25℃ IR2 @VR=ratedVR 20 25.0 mA TJ=125℃ JunctionCapacitance CT @VR=5V,TC=25℃ 650 700 pF fSIG=1MHz SeriesInductance LS Measuredleadtolead5mmfrom 8.0 - nH packagebody VoltageRateofChange dv/dt - - 10,000 V/μs * Pulsewidth<300µs, dutycycle<2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case RJC DCoperation 3.0 C/W TypicalThermalResistance Mountingsurface,smoothand CasetoHeatSink RCS greased(onlyforTO-220) 0.50 C/W CaseStyle TO-220ACD2PAK Tube Specification Tube Specification(TO-220AC) Device Package Weight Shipping MBR... TO-220AC 1.8g 50pcs/tube MBRB... D²PAK 1.85g 800pcs/reel Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 

MBR735/MBRB735 MBR745/MBRB745 TechnicalData DataSheetN0720,Rev.A Ratings and Characteristics Curves Typical Forward Characteristics Typical Reverse Characteristics 102 150 °C (mR 101 A) 101 125 °C 150 °C 100 °C 100 75 °C (A)F 10-1 50 °C 10-2 25 °C 125 °C In s 100 tan ta 10-3 n 25 °C eo 0 10 20 30 40 50 60 u s R Reverse Voltage - VR (V) e v Typical Junction Capacitance e In rs stantan e Curre (pF)T 780000 e n ous F t - I 600 o 500 rw 10-1 a rd 400 C u 300 rre nt - I 0.0 0.2 0.4 0.6 0.8 Junc 200 0 10 20 30 40 50 60 Forward Voltage Drop - V F (V) tion Reverse Voltage - VR (V) C a p a c ita n c e - C  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 

MBR735/MBRB735 MBR745/MBRB745 TechnicalData DataSheetN0720,Rev.A Marking Diagram WhereXXXXXisYYWWL MBR =DeviceType B =Packagetype 7 =ForwardCurrent(7A) 35/45 =ReverseVoltage(35/45V) SSG =SSG YY =Year WW =Week L =LotNumber Cautions:Moldingresin EpoxyresinUL:94V-0 Carrier Tape Specification D2PAK Millimeters Symbol Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 

MBR735/MBRB735 MBR745/MBRB745 TechnicalData DataSheetN0720,Rev.A Mechanical Dimensions TO-220AC Symbol Dimensionsinmillimeters Min. Typical Max. A 4.47 4.70 4.85 A1 1.17 1.27 1.37 A2 2.52 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 D 14.64 14.94 15.24 D1 8.50 8.07 8.90 E 10.01 10.16 10.31 E1 9.98 10.18 10.38 e1 4.98 5.08 5.18 H1 6.04 6.24 6.44 L 13.00 13.86 14.08 L1 3.56 3.80 3.96 ΦP 3.74 3.84 4.04 Q 2.54 2.74 2.94 Θ1 5° Θ2 4° Θ3 4° Mechanical Dimensions D2PAK Millimeters Symbol Min. Typical Max. A 4.47 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 c1 1.17 1.27 1.37 D 8.50 8.70 8.90 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.31 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.74 L1 1.12 1.27 1.42 L2 1.30 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4°  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 

MBR735/MBRB735 MBR745/MBRB745 TechnicalData DataSheetN0720,Rev.A DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsalesdepartment forthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment,medical equipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorbymeansof users’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentorany othercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltdassumesno responsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuits describedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceoranysecondary damageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics(Nanjing) Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC- SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwillhinder maintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty.When exportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 