MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G Switch-mode Power Rectifier 100 V, 60 A www.onsemi.com SCHOTTKY BARRIER Features and Benefits RECTIFIER • Low Forward Voltage: 0.72 V @ 125°C 60 AMPERES, 100 VOLTS • Low Power Loss/High Efficiency • High Surge Capacity 1 • 175°C Operating Junction Temperature 2, 4 • 60 A Total (30 A Per Diode Leg) 3 • NRVB Prefix for Automotive and Other Applications Requiring 4 MARKING Unique Site and Control Change Requirements; AEC−Q101 DIAGRAM Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant TO−220 Applications • CASE 221A Power Supply − Output Rectification AYWW STYLE 6 • B60H100G Power Management A K A • Instrumentation 1 2 3 Mechanical Characteristics: • Case: Epoxy, Molded D2PAK−3 • AYWW Epoxy Meets UL 94 V−0 @ 0.125 in CASE 418B B60H100G • STYLE 3 Weight (Approximately): 1.9 Grams (TO−220) AKA 1.7 Grams (D2PAK−3) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: A = Assembly Location 260°C Max. for 10 Seconds Y = Year • WW = Work Week ESD Rating: Human Body Model = 3B B60H100= Device Code Machine Model = C G = Pb−Free Package AKA = Polarity Designator ORDERING INFORMATION Device Package Shipping† MBR60H100CTG TO−220 50 Units/Rail (Pb−Free) MBRB60H100CTT4G D2PAK−3 800/ (Pb−Free) Tape & Reel NRVBB60H100CTT4G D2PAK−3 800/ (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2017 − Rev. 7 MBR60H100CT/D

MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A (TC = 155°C) Per Diode 30 Per Device 60 Peak Repetitive Forward Current IFRM 60 A (Square Wave, 20 kHz, TC = 151°C) Nonrepetitive Peak Surge Current IFSM 350 A (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Range (Note 1) TJ (cid:2)55 to +175 °C Storage Temperature Range Tstg (cid:2)65 to +175 °C Voltage Rate of Change (Rated VR) dV/dt 10,000 V/(cid:2)s Controlled Avalanche Energy (see test conditions in Figures 9 and 10) WAVAL 400 mJ ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R(cid:3)JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance °C/W Junction−to−Case (Min. Pad) R(cid:3)JC 1.0 Junction−to−Ambient (Min. Pad) R(cid:3)JA 70 ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) vF V (iF = 30 A, TJ = 25°C) − 0.80 0.84 (iF = 30 A, TJ = 125°C) − 0.68 0.72 (iF = 60 A, TJ = 25°C) − 0.93 0.98 (iF = 60 A, TJ = 125°C) − 0.81 0.84 Maximum Instantaneous Reverse Current (Note 2) iR mA (Rated DC Voltage, TJ = 125°C) − 2.0 10 (Rated DC Voltage, TJ = 25°C) − 0.0013 0.01 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤2.0%. www.onsemi.com 2

MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G TYPICAL CHARACTERISTICS PS) 100 PS) 100 M M A A T ( T ( N N E E R 175°C R 175°C R R CU 10 CU 10 D D R R A A W W OR TJ = 150°C 125°C OR TJ = 150°C 125°C F F S S U 1.0 U 1.0 O O E E TAN 25°C TAN 25°C N N A A T T S S N N i , IF 0.10.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i , IF 0.10.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E−01 S)1E−01 MP TJ = 150°C MPS) 1E−02 TJ = 150°C T (A1E−02 T (A 1E−03 REN1E−03 TJ = 125°C EN TJ = 125°C UR R 1E−04 C1E−04 R E U S SE C 1E−05 VER1E−05 TJ = 25°C VER 1E−06 TJ = 25°C M RE1E−06 E U , RR 1E−07 XIM1E−07 I A 1E−08 M1E−08 0 20 40 60 80 100, R 0 20 40 60 80 100 I VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current PS) 48 S) 26 AM 44 dc MP 24 RATED VOLTAGE APPLIED NT ( 40 T (A 22 R(cid:3)JA = 16° C/W CURRE 3362 SQUARE WAVE URREN 1280 (RN(cid:3)OJ AH =E A7T0S° ICN/KW) ARD 28 RD C 1146 dc AGE FORW 221406 GE FORWA 811.020 SQUARE WAVE VER 12 ERA 6.0 dc I , AF (AV) 84..000130 135 140 145 150 155 160 165 170 175 180 I , AVF (AV) 24..0000 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg www.onsemi.com 3

MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G TYPICAL CHARACTERISTICS S) T T 60 10000 A N (W 5562 TJ = 175°C TJ = 25°C O SQUARE WAVE TI 48 SIPA 44 pF) DIS 40 E (1000 WER 3326 dc ANC O 28 T P CI D 24 A R P FORWA 112620 C, CA 100 GE 8 RA 4 VE 0 10 P , AF (AV) 0 4 8IF(A1V2), A1V6ER2A0GE2 F4OR2W8AR32D C3U6RR4E0NT4 (4AM4P8S)52 56 60 0 2V0R, REVER40SE VOLTA6G0E (VOLTS8)0 100 Figure 7. Forward Power Dissipation Figure 8. Capacitance www.onsemi.com 4

MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G +VDD IL 10 mH COIL VD BVDUT MERCURY ID SWITCH IL ID DUT S1 VDD t0 t1 t2 t Figure 9. Test Circuit Figure 10. Current−Voltage Waveforms The unclamped inductive switching circuit shown in elements are small Equation (1) approximates the total Figure 9 was used to demonstrate the controlled avalanche energy transferred to the diode. It can be seen from this capability of this device. A mercury switch was used instead equation that if the V voltage is low compared to the DD of an electronic switch to simulate a noisy environment breakdown voltage of the device, the amount of energy when the switch was being opened. contributed by the supply during breakdown is small and the When S is closed at t the current in the inductor I ramps total energy can be assumed to be nearly equal to the energy 1 0 L up linearly; and energy is stored in the coil. At t the switch stored in the coil during the time when S was closed, 1 1 is opened and the voltage across the diode under test begins Equation (2). to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at EQUATION (1): (cid:4) (cid:5) BV and the diode begins to conduct the full load current whiDchU Tnow starts to decay linearly through the diode, and W (cid:3) 1LI2 BVDUT AVAL 2 LPK BV V goes to zero at t2. DUT DD By solving the loop equation at the point in time when S 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is EQUATION (2): equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in WAVAL(cid:3) 12LI2LPK breakdown (from t to t ) minus any losses due to finite 1 2 component resistances. Assuming the component resistive www.onsemi.com 5

MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G PACKAGE DIMENSIONS D2PAK−3 CASE 418B−04 ISSUE L NOTES: C 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. V 3. 418B−01 THRU 418B−03 OBSOLETE, −B− NEW STANDARD 418B−04. W 4 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 A C 0.160 0.190 4.06 4.83 S D 0.020 0.035 0.51 0.89 1 2 3 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC −T− H 0.080 0.110 2.03 2.79 K J 0.018 0.025 0.46 0.64 SEATING W PLANE G J KL 00..009502 00..011702 21..2392 21..7893 M 0.280 0.320 7.11 8.13 H N 0.197 REF 5.00 REF D3 PL P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF 0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 VARIABLE STYLE 3: CONFIGURATION PIN 1.ANODE ZONE N P 2.CATHODE R 3.ANODE U 4.CATHODE L L L M M M F F F VIEW W−W VIEW W−W VIEW W−W 1 2 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6

MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −T− SPELAATNIENG 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL B F C BODY AND LEAD IRREGULARITIES ARE T S ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 Q A B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 1 2 3 U D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 H G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 K J 0.014 0.024 0.36 0.61 Z K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 L R Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 V J S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 G U 0.000 0.050 0.00 1.27 D V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 N STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MBR60H100CT/D 7

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