MBR5H100MFS, NRVB5H100MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features http://onsemi.com • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After SCHOTTKY BARRIER Board Mounting RECTIFIERS • Guardring for Stress Protection 5 AMPERES • Low Forward Voltage Drop • 175°C Operating Junction Temperature 100 VOLTS • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 1,2,3 5,6 Qualified and PPAP Capable • These are Pb−Free Devices MARKING Mechanical Characteristics: DIAGRAM • Case: Epoxy, Molded A C • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. 1 A B5H100 • Lead Finish: 100% Matte Sn (Tin) SO−8 FLAT LEAD A AYWZZ • Lead and Mounting Surface Temperature for Soldering Purposes: CASE 488AA Not Used C 260°C Max. for 10 Seconds STYLE 2 • B5H100 = Specific Device Code Device Meets MSL 1 Requirements A = Assembly Location Y = Year MAXIMUM RATINGS W = Work Week Rating Symbol Value Unit ZZ = Lot Traceability Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR 100 ORDERING INFORMATION Average Rectified Forward Current IF(AV) 5 A (Rated VR, TC = 150°C) Device Package Shipping† Peak Repetitive Forward Current, IFRM 10 A MBR5H100MFST1G SO−8 FL 1500 / (Rated VR, Square Wave, (Pb−Free) Tape & Reel 20 kHz, TC = 150°C) MBR5H100MFST3G SO−8 FL 5000 / Non−Repetitive Peak Surge Current IFSM 200 A (Pb−Free) Tape & Reel (Surge Applied at Rated Load NRVB5H100MFST1G SO−8 FL 1500 / Conditions Halfwave, Single (Pb−Free) Tape & Reel Phase, 60 Hz) Storage Temperature Range Tstg −65 to +175 °C NRVB5H100MFST3G SO−8 FL 5000 / Operating Junction Temperature TJ −55 to +175 °C (Pb−Free) Tape & Reel Voltage Rate of Change dv/dt 10,000 V/(cid:2)s †For information on tape and reel specifications, (Rated VR) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Unclamped Inductive Switching EAS 100 mJ Brochure, BRD8011/D. Energy (10 mH Inductor, Non−repetitive) ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2012 − Rev. 4 MBR5H100MFS/D

MBR5H100MFS, NRVB5H100MFS THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, Junction−to−Case, Steady State RθJC − 2.4 °C/W (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) vF V (iF = 5 Amps, TJ = 125°C) 0.56 0.6 (iF = 5 Amps, TJ = 25°C) 0.6 0.73 Instantaneous Reverse Current (Note 1) iR mA (Rated dc Voltage, TJ = 125°C) 3 13 (Rated dc Voltage, TJ = 25°C) 0.003 0.1 1. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤2.0%. http://onsemi.com 2

MBR5H100MFS, NRVB5H100MFS TYPICAL CHARACTERISTICS 175°C 25°C RD 150°C −40°C RD 175°C −40°C A A W 125°C W R 10 R 10 O O FA) FA) US T ( US T ( ON ON E E ER ER NR NR TAU 1 TAU 1 NC NC A A T T 25°C S S N N , IF , IF 125°C I I 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward Characteristics Characteristics A) A) T (1.E+00 T (1.E+00 N N RE1.E−01 175°C RE1.E−01 175°C R R U1.E−02 U E C1.E−03 150°C E C1.E−02 150°C S 125°C S 125°C ER1.E−04 ER1.E−03 V V E1.E−05 E1.E−04 R R US 1.E−06 25°C US 1.E−05 25°C O O E1.E−07 E N N1.E−06 −40°C TA1.E−08 TA AN1.E−09 −40°C AN1.E−07 T T S S N1.E−10 N1.E−08 , IR 0 10 20 30 40 50 60 70 80 90 100, IR 0 10 20 30 40 50 60 70 80 90 100 I I VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current Characteristics Characteristics A) 10,000 T ( 300 pF) EN 280 Single pulse non−repetitive square E ( RR wave 25°C ambient NC CU 260 Mounted on a minimum pad, FR4 TA1000 E board, 1 oz. copper pour CI G 240 A R P U A S 220 C D N R O A 200 TI 100 W C R N O 180 U F J M , J U 160 C M 10 XI 140 0 10 20 30 40 50 60 70 80 90 100 A 0 1.0 2.0 3.0 4.0 M VR, REVERSE VOLTAGE (V) PULSE DURATION (ms) Figure 5. Typical Junction Capacitance Figure 6. Forward Surge Safe Operating Area http://onsemi.com 3

MBR5H100MFS, NRVB5H100MFS TYPICAL CHARACTERISTICS 9 6 D D R 8 R A A W W 5 R 7 R O DC O DC F Square F D A) 6 Wave D A) 4 ECTIFIERRENT ( 45 ECTIFIERRENT ( 3 SWquaavere RU RU E C 3 E C 2 G G A A R 2 R VE VE 1 R(cid:3)JA = 49°C/W , AF 1 R(cid:3)JC = 1°C/W , AF I 0 I 0 150 155 160 165 170 175 0 20 40 60 80 100 120 140 160 180 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 7. Forward Current Derating Over Case Figure 8. Forward Current Derating Over Temperature Ambient Temperature 3 140 ER TJ = 175°C Assumes 25°C W 120 Ambient Temperature O P RD W) 2 100 RAGE FORWADISSIPATION ( 1 SWquaavere DC (cid:3)° (C/W)JA 468000 2 oz. Copper PCB1 oz. Copper PCB E V A , D 20 P 0 0 0 1 2 3 4 5 0 100 200 300 400 500 600 700 IF, AVERAGE RECTIFIED FORWARD CURRENT (A) COPPER HEAT SPREADER AREA (mm2) Figure 9. Maximum Forward Power Figure 10. Steady State Junction to Ambient Dissipation Thermal Resistance 10 Assumes 25°C ambient and soldered to a 600 mm2 − 1 oz copper pad on PCB 50% Duty Cycle 1 W) 20% C/ 10% ° R(t) ( 5% 0.1 2% 1% Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 11. Transient Thermal Response, Junction to Case http://onsemi.com 4

MBR5H100MFS, NRVB5H100MFS PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA 2 X ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER 0.20 C ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE 2 B BURRS. 2 X D1 0.20 C MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 A1 0.00 −−− 0.05 E1 4 (cid:2)X bc 00..3233 00..4218 00..5313 E D 5.15 BSC 2 D1 4.50 4.90 5.10 c D2 3.50 −−− 4.22 A1 E 6.15 BSC E1 5.50 5.80 6.10 1 2 3 4 E2 3.45 −−− 4.30 e 1.27 BSC TOP VIEW G 0.51 0.61 0.71 C K 1.20 1.35 1.50 3 X e SEATING L 0.51 0.61 0.71 0.10 C PLANE L1 0.05 0.17 0.20 M 3.00 3.40 3.80 A DETAIL A (cid:2) 0 (cid:2) −−− 12 (cid:2) 0.10 C STYLE 2: PIN 1.ANODE SIDE VIEW 2.ANODE DETAIL A 3.ANODE SOLDERING FOOTPRINT* 4.NO CONNECT 5.CATHODE 8X b 3X 4X 1.270 0.750 0.10 C A B 4X 0.05 c L e/2 1.000 1 4 K 0.965 1.330 2X E2 0.905 PIN 5 M 2X (EXPOSED PAD) L1 0.495 4.530 3.200 0.475 G D2 BOTTOM VIEW 2X 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MBR5H100MFS/D 5

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