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  • 型号: MBR360RLG
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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MBR360RLG产品简介:

ICGOO电子元器件商城为您提供MBR360RLG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MBR360RLG价格参考。ON SemiconductorMBR360RLG封装/规格:二极管 - 整流器 - 单, Diode Schottky 60V 3A Through Hole DO-201AD。您可以下载MBR360RLG参考资料、Datasheet数据手册功能说明书,资料中有MBR360RLG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 60V 3A DO201AD肖特基二极管与整流器 3A 60V

产品分类

单二极管/整流器分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,ON Semiconductor MBR360RLG-

数据手册

点击此处下载产品Datasheet

产品型号

MBR360RLG

不同If时的电压-正向(Vf)

740mV @ 3A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

600µA @ 60V

二极管类型

肖特基

产品

Schottky Diodes

产品目录页面

点击此处下载产品Datasheet

产品种类

肖特基二极管与整流器

供应商器件封装

DO-201AD

其它名称

MBR360RLGOSTR

包装

带卷 (TR)

反向恢复时间(trr)

-

商标

ON Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Reel

封装/外壳

DO-201AA,DO-27,轴向

封装/箱体

DO-201AD

峰值反向电压

60 V

工作温度-结

-65°C ~ 150°C

工作温度范围

- 65 C to + 150 C

工厂包装数量

1500

技术

Silicon

最大反向漏泄电流

600 uA

最大工作温度

+ 150 C

最大浪涌电流

80 A

最小工作温度

- 65 C

标准包装

1,500

正向电压下降

1.08 V at 9.4 A

正向连续电流

3 A

热阻

28°C/W Ja

电压-DC反向(Vr)(最大值)

60V

电流-平均整流(Io)

3A

系列

MBR360

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

零件号别名

MBR360G

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PDF Datasheet 数据手册内容提取

MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devicesemploy the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity http://onsemi.com protection diodes. Features • Extremely Low v SCHOTTKY BARRIER F • Low Power Loss/High Efficiency RECTIFIERS • Highly Stable Oxide Passivated Junction 3.0 AMPERES • Low Stored Charge, Majority Carrier Conduction 50, 60 VOLTS • Pb−Free Packages are Available* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Polarity: Cathode indicated by Polarity Band AXIAL LEAD CASE 267−05 MAXIMUM RATINGS (DO−201AD) STYLE 1 Rating Symbol Max Unit Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM MARKING DIAGRAM DC Blocking Voltage MBR350 VR 50 MBR360 60 A(Rv(cid:2)eJrAa g=e 2 R8°eCct/iWfie, dP .FCo.r Bwoaardrd C Muroruenntti nTgA) = 65°C IO 3.0 A MABR Non−Repetitive Peak Surge Current (Note 1) IFSM 80 A 3x(cid:2)0(cid:2) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75°C) Operating and Storage Junction Temperature TJ, Tstg −65 to °C Range (Reverse Voltage Applied) +150 A = Assembly Location THERMAL CHARACTERISTICS x = 5 or 6 Thermal Resistance, Junction−to−Ambient R(cid:2)JA 28 °C/W (cid:2) = Pb−Free Package (see Note 4 − Mounting Data, Mounting Method 3) (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended ORDERING INFORMATION Operating Conditions is not implied. Extended exposure to stresses above the See detailed ordering and shipping information in the package Recommended Operating Conditions may affect device reliability. dimensions section on page 3 of this data sheet. 1. Lead Temperature reference is cathode lead 1/32 in from case. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: June, 2006 − Rev. 6 MBR350/D

MBR350, MBR360 ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 2) Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 3) vF V (iF = 1.0 Amp) 0.600 (iF = 3.0 Amp) 0.740 (iF = 9.4 Amp) 1.080 Maximum Instantaneous Reverse Current @ Rated DC Voltage (Note 3) iR mA TL = 25°C 0.60 TL = 100°C 20 2. Lead Temperature reference is cathode lead 1/32 in from case. 3. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle =2.0%. 20 20 TJ = 100°C 75°C 25°C mA) 51.00 TJ = 150°C 10 NT ( 2.0 100°C E 1.0 R 7.0 UR 0.50 C 75°C 5.0 ERSE 00..1200 *vTohltaeg ceu drveevsic seh ionw thne a vroel ttaygpeic aglr ofourp itnhge. hTiygphiecsatl V NT (AMPS) 32..00 I , RER 000...000152 rbseuevf feeicrssiteeimn ctaluytr ebrdee nlfotr owfom rr altohtweedes reV v Rso.altmagee csuerlveecstio 2inf5 sV° cCRa ins E 0.005 R R U 0.002 C D 1.0 0 10 20 30 40 50 60 80 R WA 0.7 VR REVERSE VOLTAGE (VOLTS) OR Figure 2. Typical Reverse Current* F S 0.5 U NEO MPS) 5.0 STANTA 00..23 ENT (A 4.0 RRA(cid:2)JTAE =D 2V8R°C/W N R i , IF D CUR DC 0.1 AR 3.0 SQUARE W R WAVE 0.07 O E F 2.0 G 0.05 A R E 00..0032 I , AVF (AV) 10.0 TJ = 150°C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 120 140 160 vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (C°) Figure 1. Typical Forward Voltage Figure 3. Current Derating Ambient (Mounting Method 3 per Note 4) http://onsemi.com 2

MBR350, MBR360 S) 5.0 300 T T A W ON ( 4.0 TJ = 150°C 200 TJ = 25°C ATI F) P p WER DISSI 3.0 SQWUAAVREE CITANCE ( 100 PO 2.0 APA 70 AGE dc C, C R 50 E 1.0 V P , AF (AV) 0 4300 0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50 IF (AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. Power Dissipation Figure 5. Typical Capacitance NOTE 4 — MOUNTING DATA Data shown for thermal resistance, junction−to−ambient (R(cid:2)JA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR R(cid:2)JA IN STILL AIR Lead Length, L (in) Mounting Method 1/8 1/4 1/2 3/4 R(cid:2)JA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 3 28 °C/W Mounting Method 1 Mounting Method 2 Mounting Method 3 P.C. Board where available Vector Push−In Terminals T−28 P.C. Board with 2−1/2 in X 2−1/2 in copper surface is small. ÉÉ copper surface. L L ÉÉÉÉL ÉÉÉÉÉL ÉÉ ÉÉ L = 1/2’’ ÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉ ÉÉ Board Ground Plane ÉÉ ORDERING INFORMATION Device Package Shipping† MBR350RL Axial Lead 1500 Units / Tape & Reel MBR350RLG Axial Lead 1500 Units / Tape & Reel (Pb−Free) MBR360 Axial Lead 500 Units / Bag MBR360G Axial Lead 500 Units / Bag (Pb−Free) MBR360RL Axial Lead 1500 Units / Tape & Reel MBR360RLG Axial Lead 1500 Units / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3

MBR350, MBR360 PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 (DO−201AD) ISSUE G K A NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI D Y14.5M, 1982. 1 2 2.CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.287 0.374 7.30 9.50 B B 0.189 0.209 4.80 5.30 K D 0.047 0.051 1.20 1.30 K 1.000 −−− 25.40 −−− STYLE 1: PIN 1.CATHODE (POLARITY BAND) 2.ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com MBR350/D 4

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