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  • 型号: MBR2545CTG
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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MBR2545CTG产品简介:

ICGOO电子元器件商城为您提供MBR2545CTG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MBR2545CTG价格参考¥5.71-¥13.52。ON SemiconductorMBR2545CTG封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 Pair Common Cathode Schottky 45V 15A Through Hole TO-220-3。您可以下载MBR2545CTG参考资料、Datasheet数据手册功能说明书,资料中有MBR2545CTG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 45V 30A TO220AB肖特基二极管与整流器 30A 45V

产品分类

二极管,整流器 - 阵列分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,ON Semiconductor MBR2545CTGSWITCHMODE™

数据手册

点击此处下载产品Datasheet

产品型号

MBR2545CTG

不同If时的电压-正向(Vf)

820mV @ 30A

不同 Vr时的电流-反向漏电流

200µA @ 45V

二极管类型

肖特基

二极管配置

1 对共阴极

产品

Schottky Diodes

产品目录页面

点击此处下载产品Datasheet

产品种类

肖特基二极管与整流器

供应商器件封装

TO-220AB

其它名称

MBR2545CTGOS

包装

管件

反向恢复时间(trr)

-

商标

ON Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

峰值反向电压

45 V

工作温度范围

- 65 C to + 175 C

工厂包装数量

50

技术

Silicon

最大反向漏泄电流

200 uA

最大工作温度

+ 175 C

最大浪涌电流

150 A

最小工作温度

- 65 C

标准包装

50

正向电压下降

0.82 V

正向连续电流

30 A

热阻

1.5°C/W Jc

电压-DC反向(Vr)(最大值)

45V

电流-平均整流(Io)(每二极管)

30A

系列

MBR2545CT

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Dual Common Cathode

零件号别名

MBR3045STG

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PDF Datasheet 数据手册内容提取

MBR2535CTG, MBR2545CTG Switch‐mode Power Rectifiers The MBR2535CTG/45CTG series uses the Schottky Barrier http://onsemi.com principle with a platinum barrier metal. These state-of-the-art devices have the following features: SCHOTTKY BARRIER Features RECTIFIERS • Guardring for Stress Protection • 30 AMPERES Low Forward Voltage • 175°C Operating Junction Temperature 35 and 45 VOLTS • These are Pb-Free Devices* 1 Mechanical Characteristics 2, 4 • Case: Epoxy, Molded 3 • Epoxy Meets UL 94 V−0 @ 0.125 in • 4 Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 2 3 TO−220 CASE 221A STYLE 6 MARKING DIAGRAM A = Assembly Location Y = Year AY WW WW = Work Week B25x5G B25x5 = Device Code AKA x = 3 or 4 G = Pb−Free Package AKA = Diode Polarity ORDERING INFORMATION Device Package Shipping MBR2535CTG TO−220 50 Units/Rail (Pb−Free) MBR2545CTG TO−220 50 Units/Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2014 − Rev. 15 MBR2535CT/D

MBR2535CTG, MBR2545CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR MBR2535CTG 35 MBR2545CTG 45 Average Rectified Forward Current IF(AV) A (Rated VR, TC = 160°C) Per Device 30 Per Diode 15 Peak Repetitive Forward Current IFRM A per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C) 30 Non-Repetitive Peak Surge Current per Diode Leg IFSM A (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) 150 Peak Repetitive Reverse Surge Current (2.0 (cid:2)s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/(cid:2)s ESD Ratings: ESD V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/R(cid:3)JA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance, °C/W Junction-to-Case R(cid:3)JC 1.5 Junction-to-Ambient (Note 2) R(cid:3)JA 50 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Diode) Symbol Characteristic Condition Min Typ Max Unit VF Instantaneous Forward Voltage IF = 15 Amp, TJ = 25°C − − 0.62 V (Note 3) IF = 15 Amp, TJ = 125°C − 0.50 0.57 IF = 30 Amp, TJ = 25°C − − 0.82 IF = 30 Amp, TJ = 125°C − 0.65 0.72 IR Instantaneous Reverse Current Rated dc Voltage, TJ = 25°C − − 0.2 mA (Note 3) Rated dc Voltage, TJ = 125°C − 9.0 25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤ 2.0%. http://onsemi.com 2

MBR2535CTG, MBR2545CTG S)1000 200 P M 100 A RENT ( 100 mA) 124000 TJ = 150°C CUR NT ( 4.0 125°C ARD TJ = 125°C RRE 12..00 ORW 10 E CU 0.4 100°C OUS F 150°C EVERS 00..21 75°C E 1.0 R 0.04 NTAN 25°C I, R 00..0021 25°C A T S 0.004 , INF 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0020 10 20 30 40 50 I VF(cid:3), INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg S) 48 S) 48 MP 44 MP 44 RATED VR APPLIED A A NT ( 40 NT ( 40 R(cid:3)JA = 16°C/W E 36 E 36 (With TO-220 Heat Sink) R R D CUR 2382 dc D CUR 2382 dc R(N(cid:3)oJ AH =e a6t0 S°iCn/kW) R R WA 24 SQUARE WAVE WA 24 OR 20 OR 20 SQUARE WAVE F F E 16 E 16 G G RA 12 RA 12 dc E E AV 8.0 RATED VOLTAGE APPLIED AV 8.0 , V)4.0 R(cid:3)JC = 1.5°C/W , V) 4.0 SQUARE WAVE A A F( 0 F( 0 I 110 120 130 140 150 160 170 180 I 0 20 40 60 80 100 120 140 160 180 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating, Per Device Figure 4. Current Derating, Per Device S) 32 T WAT 28 (RESISTIVE(cid:2)LOAD) IPK(cid:2)(cid:4) SQUARE WAVE N ( IAV O TI 24 A P I DISSI 20 (CAPACITATIVE(cid:2)LOAD) IPAKV(cid:2)5.0 dc R E 16 W O 10 E P 12 G 20 A R 8.0 AVE TJ = 125°C , V) 4.0 A F( 0 P 0 4.0 8.0 12 16 20 24 28 32 36 40 IF, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Forward Power Dissipation http://onsemi.com 3

MBR2535CTG, MBR2545CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −T− SPELAATNIENG 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL B F C BODY AND LEAD IRREGULARITIES ARE T S ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 Q A B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 1 2 3 U D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 H G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 K J 0.014 0.024 0.36 0.61 Z K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 L R Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 V J S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 G U 0.000 0.050 0.00 1.27 D V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 N STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MBR2535CT/D 4

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