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MBR2035CT产品简介:
ICGOO电子元器件商城为您提供MBR2035CT由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MBR2035CT价格参考。Fairchild SemiconductorMBR2035CT封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 对共阴极 肖特基 35V 通孔 TO-220-3。您可以下载MBR2035CT参考资料、Datasheet数据手册功能说明书,资料中有MBR2035CT 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 35V 20A TO220AB肖特基二极管与整流器 20 amp Rectifiers Schottky Barrier |
产品分类 | 二极管,整流器 - 阵列分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,Fairchild Semiconductor MBR2035CT- |
数据手册 | |
产品型号 | MBR2035CT |
PCN组件/产地 | |
不同If时的电压-正向(Vf) | 840mV @ 20A |
不同 Vr时的电流-反向漏电流 | 100µA @ 35V |
二极管类型 | |
二极管配置 | 1 对共阴极 |
产品 | Schottky Rectifiers |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | TO-220AB |
其它名称 | MBR2035CTFS |
包装 | 管件 |
单位重量 | 1.800 g |
反向恢复时间(trr) | - |
商标 | Fairchild Semiconductor |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 |
封装/箱体 | TO-220-3 |
峰值反向电压 | 35 V |
工作温度范围 | - 65 C to + 160 C |
工厂包装数量 | 50 |
技术 | Silicon |
最大反向漏泄电流 | 100 uA |
最大工作温度 | + 160 C |
最大浪涌电流 | 150 A |
最小工作温度 | - 65 C |
标准包装 | 50 |
正向电压下降 | 0.84 V |
正向连续电流 | 20 A |
热阻 | 2°C/W Jl |
电压-DC反向(Vr)(最大值) | 35V |
电流-平均整流(Io)(每二极管) | 20A |
系列 | MBR2035 |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Dual Common Cathode |
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 10 A FEATURES Base 2 common • 150 °C T operation J cathode • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance TO-220AB 1 Common 3 • Guard ring for enhanced ruggedness and long cathode term reliability • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY • Designed and qualified according to JEDEC-JESD47 Package TO-220AB • Halogen-free according to IEC 61249-2-21 definition IF(AV) 2 x 10 A (-N3 only) V 35 V, 45 V R DESCRIPTION V at I 0.57 V F F This center tap Schottky rectifier has been optimized for low I max. 15 mA at 125 °C RM reverse leakage at high temperature. The proprietary barrier T max. 150 °C J technology allows for reliable operation up to 150 °C Diode variation Common cathode junction temperature. Typical applications are in switching EAS 8 mJ power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform (per device) 20 A F(AV) V 35/45 V RRM I T = 135 °C (per leg) 20 FRM C A I t = 5 μs sine 1060 FSM p V 10 A , T = 125 °C 0.57 V F pk J T Range - 65 to 150 °C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBR2035CTPbF VS-MBR2035CT-N3 VS-MBR2045CTPbF VS-MBR2045CT-N3 UNITS Maximum DC reverse V voltage R 35 35 45 45 V Maximum working peak V reverse voltage RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 10 I T = 135 °C, rated V forward current per device F(AV) C R 20 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 135 °C 20 FRM R C Following any rated load 5 µs sine or 3 µs rect. pulse condition and with rated VRRM 1060 A Non-repetitive peak surge current I applied FSM Surge applied at rated load condition half wave, 150 single phase, 60 Hz Current decaying linearly to zero in 1 μs Repetitive avalanche current per leg I 2 AR Frequency limited by T maximum V = 1.5 x V typical J A R Non-repetitive avalanche energy per leg E T = 25 °C, I = 2 A, L = 4 mH 8 mJ AS J AS Revision: 29-Aug-11 1 Document Number: 94288 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A T = 25 °C 0.84 J Maximum forward voltage drop V (1) 10 A 0.57 V FM T = 125 °C J 20 A 0.72 T = 25 °C 0.1 J Maximum instantaneous reverse current I (1) Rated DC voltage mA RM T = 125 °C 15 J Threshold voltage V 0.354 V F(TO) T = T maximum J J Forward slope resistance rt 17.6 m Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 °C 600 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/µs R Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T - 65 to 150 J °C Maximum storage temperature range T - 65 to 175 Stg Maximum thermal resistance, R DC operation 2.0 junction to case per leg thJC °C/W Typical thermal resistance, Mounting surface, smooth and greased R 0.50 case to heatsink thCS (only for TO-220) 2 g Approximate weight 0.07 oz. minimum 6 (5) kgf · cm Mounting torque Non-lubricated threads maximum 12 (10) (lbf·in) MBR2035CT Marking device Case style TO-220AB MBR2045CT Revision: 29-Aug-11 2 Document Number: 94288 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series www.vishay.com Vishay Semiconductors A) 100 100 rent ( A) 10 TJ = 150 °C r m rd Cu ent ( 1 TJ = 12T5J =°C 100 °C a r w ur T = 75 °C or 10 C 0.1 J neous F TTTJJJ === 11252505 ° C°°CC Reverse 0.01 TJT =J =5 02 5°C °C nta - R 0.001 a I st n I - IF 10.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.00010 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. (Per Leg) Reverse Voltage (Per Leg) 1000 F) p e ( c n a cit a p a C TJ = 25 °C n o cti n u J - T C 100 0 10 20 30 40 50 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 W) C/ ° e ( c n a 1 d e p m D = 0.75 PDM mal I DD == 00..5303 t1 Ther 0.1 Single pulse DD == 00..2250 Notes: t2 - C (thermal resistance) 1. Duty factor D = t1/t2 ZthJ 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t - Rectangular Pulse Duration (s) 1 Fig. 4 - Maximum Thermal Impedance Z Characteristics (Per Leg) thJC Revision: 29-Aug-11 3 Document Number: 94288 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series www.vishay.com Vishay Semiconductors 150 10 C) D = 0.20 ature (° 145 s (W) 8 DDD === 000...235530 per 140 DC Los 6 D = 0.75 m r e e T 135 Square wave (D = 0.50) w RMS limit Case 130 Rated VR applied ge Po 4 e a DC bl er a v 2 w 125 A o All See note (1) 120 0 0 3 6 9 12 15 0 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics (Per Leg) Average Forward Current (Per Leg) A) 1000 nt ( e At any rated load condition rr and with rated V applied u RRM C following surge e g r u S e v etiti p e R n- o N - M 100 S F 10 100 1000 10 000 I t - Square Wave Pulse Duration (µs) p Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd ) x R ; C J REV thJC Pd = Forward power loss = I x V at (I /D) (see fig. 6); F(AV) FM F(AV) Pd = Inverse power loss = V x I (1 - D); I at V = Rated V REV R1 R R R1 R Revision: 29-Aug-11 4 Document Number: 94288 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 20 45 CT PbF 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating (20 = 20 A) 35 = 35 V 4 - Voltage ratings 45 = 45 V 5 - CT = Essential part number 6 - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MBR2035CTPbF 50 1000 Antistatic plastic tube VS-MBR2035CT-N3 50 1000 Antistatic plastic tube VS-MBR2045CTPbF 50 1000 Antistatic plastic tube VS-MBR2045CT-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 Part marking information TO-220AB -N3 www.vishay.com/doc?95028 SPICE model www.vishay.com/doc?95295 Revision: 29-Aug-11 5 Document Number: 94288 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches B (6) A Seating E plane Thermal pad Ø P A A E2 (7) 0.014MBAM (E) A1 Q 1 2 3 (6) (H1) D D H1 L1 (2) (7) C C D2 (6) (6) D Detail B D1 3 x b 3 x b2 1 2 3 Detail B C E1 (6) L Base metal (b, b2) Plating View A - A c c1 (4) c A 2 x e A2 (4) e1 b1, b3 0.015MBAM Section C - C and D - D Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode MILLIMETERS INCHES MILLIMETERS INCHES SYMBOL NOTES SYMBOL NOTES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6 A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6 A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147 D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93° D2 11.68 12.88 0.460 0.507 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (7) Dimensions E2 x H1 define a zone where stamping and (2) Lead dimension and finish uncontrolled in L1 singulation irregularities are allowed (3) Dimension D, D1 and E do not include mold flash. Mold flash (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and shall not exceed 0.127 mm (0.005") per side. These dimensions D2 (minimum) where dimensions are derived from the actual are measured at the outermost extremes of the plastic body package outline (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: MBR2035CT MBR2045CT VS-MBR20100CTKPBF MBR2035CT/45 MBR2045CT/45 MBR2045CT-E3/45 VS- MBR2045CTPBF VS-MBR2045CT-N3 VS-MBR2035CT-N3