MBR20020CT thru MBR20040CTR Silicon Power V = 20 V - 40 V RRM Schottky Diode I = 200 A F(AV) Features • High Surge Capability Twin Tower Package • Types from 20 to 40 V V RRM • Not ESD Sensitive Maximum ratings, at T = 25 °C, unless otherwise specified ("R" devices have leads reversed) j Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Repetitive peak reverse V 20 30 35 40 V voltage RRM RMS reverse voltage V 14 21 25 28 V RMS DC blocking voltage V 20 30 35 40 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C stg Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Average forward current I T = 125 °C 200 200 200 200 A (per pkg) F(AV) C Peak forward surge I t = 8.3 ms, half sine 1500 1500 1500 1500 A current (per leg) FSM p Maximum forward V I = 100 A, T = 25 °C 0.70 0.70 0.70 0.70 V voltage (per leg) F FM j Reverse current at rated Tj = 25 °C 1 1 1 1 DC blocking voltage I T = 100 °C 10 10 10 10 mA R j (per leg) T = 150 °C 30 30 30 30 j Thermal characteristics Thermal resistance, R 0.45 0.45 0.45 0.45 °C/W junction-case, per leg thJC 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/

MBR20020CT thru MBR20040CTR 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/

MBR20020CT thru MBR20040CTR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. 3 www.genesicsemi.com/silicon-products/schottky-rectifiers/

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: G eneSiC Semiconductor: MBR20020CT MBR20020CTR MBR20040CT MBR20035CT MBR20040CTR MBR20035CTR MBR20030CTR MBR20030CT