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MBR0530T3G产品简介:
ICGOO电子元器件商城为您提供MBR0530T3G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MBR0530T3G价格参考。ON SemiconductorMBR0530T3G封装/规格:二极管 - 整流器 - 单, Diode Schottky 30V 500mA Surface Mount SOD-123。您可以下载MBR0530T3G参考资料、Datasheet数据手册功能说明书,资料中有MBR0530T3G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 30V 0.5A SOD123肖特基二极管与整流器 0.5A 30V |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,ON Semiconductor MBR0530T3G- |
数据手册 | |
产品型号 | MBR0530T3G |
PCN组件/产地 | |
PCN设计/规格 | |
不同If时的电压-正向(Vf) | 430mV @ 500mA |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 130µA @ 30V |
二极管类型 | |
产品 | Schottky Diodes |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | SOD-123 |
其它名称 | MBR0530T3G-ND |
包装 | 带卷 (TR) |
反向恢复时间(trr) | - |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | SOD-123 |
封装/箱体 | SOD-123 |
峰值反向电压 | 30 V |
工作温度-结 | -65°C ~ 125°C |
工作温度范围 | - 65 C to + 125 C |
工厂包装数量 | 10000 |
技术 | Silicon |
最大反向漏泄电流 | 130 uA |
最大工作温度 | + 125 C |
最大浪涌电流 | 5.5 A |
最小工作温度 | - 65 C |
标准包装 | 10,000 |
正向电压下降 | 0.43 V |
正向连续电流 | 0.5 A |
热阻 | 150°C/W Jl |
电压-DC反向(Vr)(最大值) | 30V |
电流-平均整流(Io) | 500mA |
系列 | MBR0530 |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
零件号别名 | MBR0530T1G |
MBR0530, NRVB0530 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530 uses the Schottky Barrier principle with a large area http://onsemi.com metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight SCHOTTKY BARRIER are critical to the system. This package also provides an easy to work RECTIFIER with alternative to leadless 34 package style. These state−of−the−art 0.5 AMPERES devices have the following features: 30 VOLTS Features • Guardring for Stress Protection • Low Forward Voltage • 125°C Operating Junction Temperature • Epoxy Meets UL 94, V−0 @ 0.125 in • Package Designed for Optimal Automated Board Assembly SOD−123 • CASE 425 NRVB Prefix for Automotive and Other Applications Requiring STYLE 1 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • MARKING DIAGRAM These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics B3 M(cid:2) • Polarity Designator: Cathode Band 1 (cid:2) • Weight: 11.7 mg (approximately) • Case: Epoxy, Molded B3 = Device Code • M = Date Code Finish: All External Surfaces Corrosion Resistant and Terminal (cid:2) = Pb−Free Package Leads are Readily Solderable • (Note: Microdot may be in either location) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ORDERING INFORMATION Device Package Shipping† MBR0530T1G SOD−123 3,000 / (Pb−Free) Tape & Reel ** NRVB0530T1G SOD−123 3,000 / (Pb−Free) Tape & Reel ** MBR0530T3G SOD−123 10.000 / (Pb−Free) Tape & Reel *** NRVB0530T3G SOD−123 10.000 / (Pb−Free) Tape & Reel *** ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please *For additional information on our Pb−Free strategy and soldering details, please refer to our Tape and Reel Packaging Specifications download the ON Semiconductor Soldering and Mounting Techniques Brochure, BRD8011/D. Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 − Rev. 8 MBR0530T1/D
MBR0530, NRVB0530 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 30 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A (Rated VR, TL = 100°C) 0.5 Non−Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 5.5 Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ −65 to +125 °C Voltage Rate of Change (Rated VR) dv/dt 1000 V/(cid:2)s ESD Rating: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Ambient (Note 1) R(cid:3)JA 206 °C/W Thermal Resistance − Junction−to−Lead R(cid:3)JL 150 °C/W 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) vF V (iF = 0.1 Amps, TJ = 25°C) 0.375 (iF = 0.5 Amps, TJ = 25°C) 0.43 Maximum Instantaneous Reverse Current (Note 2) IR (cid:2)A (Rated DC Voltage, TC = 25°C) 130 (VR = 15 V, TC = 25°C) 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤ 2%. S) 104 P M A RRENT ( 1 μT ((cid:3)(cid:4)A) 1000 TJ = 125°C U N C E WARD TJ = 125°C 75°C 25°C -(cid:2)40°C CURR 100 75°C R E US FO 0.1 EVERS 10 O R NE , R A I NT 25°C A 1 T S N 0.01 , IF 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0 5 10 15 20 25 30 35 40 i vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2
MBR0530, NRVB0530 180 160 TYPICAL CAPACITANCE AT 0 V = 170 pF 140 F) p E ( 120 C N TA 100 CI A AP 80 C C, 60 40 20 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance 1 MP)0.875 A DC T ( N 0.75 E R R U0.625 SQUARE WAVE C D R 0.5 WA = (cid:4) R FO0.375 = 5 E AG 0.25 = 10 R E AV0.125 Ipk/Iav = 20 0 60 67 74 81 88 95 102 109 116 123 130 LEAD TEMPERATURE (°C) Figure 4. Current Derating (Lead) T) 0.35 T A N (W 0.315 TJ = 125°C SQUARE WAVE ATIO 0.28 = (cid:4) DC P 0.245 SSI = 10 = 5 DI 0.21 R WE 0.175 Ipk/Iav = 20 O P 0.14 E G A 0.105 R E V 0.07 A , AV) 0.035 F( P 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 5. Power Dissipation http://onsemi.com 3
MBR0530, NRVB0530 PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G D A NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI A1 Y14.5M, 1982. 2.CONTROLLING DIMENSION: INCH. 1 ÂÂÂÂ MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX ÂÂÂÂ A 0.94 1.17 1.35 0.037 0.046 0.053 A1 0.00 0.05 0.10 0.000 0.002 0.004 b 0.51 0.61 0.71 0.020 0.024 0.028 HE E c --- --- 0.15 --- --- 0.006 D 1.40 1.60 1.80 0.055 0.063 0.071 E 2.54 2.69 2.84 0.100 0.106 0.112 HE 3.56 3.68 3.86 0.140 0.145 0.152 L 0.25 --- --- 0.010 --- --- (cid:2) 0° --- 10° 0° --- 10° 2 (cid:2) STYLE 1: PIN 1. CATHODE b L 2. ANODE C SOLDERING FOOTPRINT* 0.91 0.036 ÉÉ ÉÉ ÉÉ ÉÉ 1.22 0.048 ÉÉ ÉÉ 2.36 0.093 4.19 0.165 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MBR0530T1/D 4
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