MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier FEATURES ~ • UL recognition, file number E54214 • Saves space on printed circuit boards ~ • Ideal for automated placement • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance ~ please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification ~ for power supply, lighting ballaster, battery charger, home TO-269AA (MBS) appliances, office equipment, and telecommunication applications. PRIMARY CHARACTERISTICS MECHANICAL DATA Package TO-269AA (MBS) Case: TO-269AA (MBS) IF(AV) 0.5 A Molding compound meets UL 94 V-0 flammability rating VRRM 200 V, 400 V, 600 V Base P/N-E3 - RoHS-compliant, commercial grade IFSM 35 A Terminals: Matte tin plated leads, solderable per IR 5 μA J-STD-002 and JESD22-B102 V at I = 0.4 A 1.0 V E3 suffix meets JESD 201 class 1A whisker test F F TJ max. 150 °C Polarity: As marked on body Diode variations Quad MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL MB2S MB4S MB6S UNIT Device marking code 2 4 6 Maximum repetitive peak reverse voltage V 200 400 600 V RRM Maximum RMS voltage V 140 280 420 V RMS Maximum DC blocking voltage V 200 400 600 V DC Maximum average forward output on glass-epoxy PCB (1) 0.5 I A rectified current (fig. 1) on aluminum substrate (2) F(AV) 0.8 Peak forward surge current 8.3 ms single half sine-wave I 35 A superimposed on rated load FSM Rating for fusing (t < 8.3 ms) I2t 5.0 A2s Operating junction and storage temperature range T , T - 55 to + 150 °C J STG Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad Revision: 19-Aug-13 1 Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL MB2S MB4S MB6S UNIT Maximum instantaneous forward I = 0.4 A V 1.0 V voltage per diode F F Maximum DC reverse current at rated DC blocking TA = 25 °C 5.0 I μA voltage per diode T = 125 °C R 100 A Typical junction capacitance per diode 4.0 V, 1 MHz C 13 pF J THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL MB2S MB4S MB6S UNIT R (1) 85 JA Typical thermal resistance R (2) 70 °C/W JA R (1) 20 JL Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MB2S-E3/45 0.22 45 100 Tube MB2S-E3/80 0.22 80 3000 13" diameter paper tape and reel  RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 0.8 35 A) Aluminum Substrate TA = 40 °C (nt 0.7 A) 30 Single Half Sine-Wave errCu de 00..56 Current ( 25 itifecR d 0.4 GEplaosxsy d Surge 1250 f = 50 Hz f = 60 Hz raw 0.3 PCB war orFe 0.2 k For 10 g a rae 0.1 Resistive or Inductive Load Pe 5 1.0 Cycle v A 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 19-Aug-13 2 Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor 10 30 A) TJ = 25 °C ward Current ( 1 TJ = 150 °C TJ = 25 °C )Fp( ecnatic 2205 fV =si g1 =.0 5 M0 HmzVp-p or ap 15 F a s C aneou 0.1 noitcn 10 stant P1 u%ls eD uWtyid Cthy c=l e300 µs uJ 5 n I 0.01 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Forward Voltage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 e g a k T = 125 °C a 10 J e L se A) erµ us Revurrent ( 1 oC e n a nt 0.1 a Inst TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-269AA (MBS) 0.029(0.74) Mounting Pad Layout 0.017(0.43) 0.023 MIN. (0.58 MIN.) 0.161 (4.10) 0.272(6.90) 0.144 (3.65) 0.252(6.40) 0.272 MAX. (6.91 MAX.) 0.030 MIN. (0.76 MIN.) 0.105 (2.67) 0.095 (2.41) 0.195 (4.95) 0.179 (4.55) 0 to 8° 0.205 (5.21) 0.195 (4.95) 0.105 (2.67) 0.095 (2.41) 0.049 (1.24) 0.106 (2.70) 0.039 (0.99) 0.090 (2.30) 0.062 (1.57) 0.058 (1.47) 0.0075 (0.19) 0.008 (0.20) 0.016 (0.41) 0.114(2.90) 0.0065 (0.16) 0.004 (0.10) 0.006 (0.15) 0.094(2.40) 0.114 (2.90) 0.018 (0.46) 0.038(0.96) 0.110 (2.80) 0.014 (0.36) 0.019(0.48) 0.058 (1.47) 0.054 (1.37) Revision: 19-Aug-13 3 Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: MB2S/45 MB2S-E3/45 MB2S-E3/80 MB4S-E3/45 MB4S-E3/80 MB6S-E3/45 MB6S-E3/80