MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Features MAGX-000035-010000 (Flanged)  GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching  Broadband Class AB operation  RoHS* Compliant  +50 V Typical Operation  MTTF = 600 years Description MAGX-000035-01000S (Flangeless) The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic package which provides excellent thermal performance. High Ordering Information breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions Part Number Package compared with older semiconductor technologies. 10 W GaN Power MAGX-000035-010000 AOprpdleicriantgio Innsf ormation1,2 Transistor (Flanged) General purpose for pulsed or CW applications: 10 W GaN Power MAGX-000035-01000S  Commercial Wireless Infrastructure (WCDMA, Transistor (Flangeless) LTE, WIMAX) 1.2-1.4 GHz Evaluation  Civilian and Military Radar MAGX-000035-SB2PPR Board (Flanged)  Military and Commercial Communications 1.2-1.4 GHz Evaluation  Public Radio MAGX-000035-SB3PPR Board (Flangeless)  Industrial, Scientific and Medical  SATCOM  Instrumentation  Avionics * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 111 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Absolute Maximum Ratings1, 2, 3 Parameter Limit Supply Voltage (V ) +65 V DD Supply Voltage (V ) -8 to 0 V GG Supply Current (I ) 800 mA DD Input Power (P ) 25 dBm IN Junction/Channel Temp 200ºC MTTF (T < 200 °C) 600 years J Continuous Power Dissipation (P ) at 85 ºC 18 W DISS Pulsed Power Dissipation (P ) at 85 ºC 43 W AVG Thermal Resistance, (T = 200 ºC), CW 9.2 ºC/W J Thermal Resistance, (T = 200 ºC), Pulsed 500 μs, 10% Duty cycle 3.4 ºC/W J Operating Temp -40 to +95ºC Storage Temp -65 to +150ºC ESD Min. - Charged Device Model (CDM) 250 V ESD Min. - Human Body Model (HBM) 250 V 1. Exceeding any one or combination of these limits may cause permanent damage to this device 2. Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. 3. For saturated performance it is recommended that the sum of (3*Vdd + abs(Vgg)) <175 V. DC Characteristics Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 175 V I - - 10.8 mA GS DS DS Gate Threshold Voltage V = 5 V, I = 2 mA V -5 -3 -2 V DS D GS (TH) Forward Transconductance V = 5 V, I = 500 mA G 5.5 - - S DS D M DC Characteristics Parameter Test Conditions Symbol Min. Typ. Max. Units Input Capacitance V = 0 V, V = -8 V, F = 1 MHz C - 4.4 - pF DS GS ISS Output Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 1.9 - pF DS GS OSS Reverse Transfer Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 0.2 - pF DS GS RSS 222 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Electrical Specifications: T = 25 ºC A Parameter Test Conditions Symbol Min. Typ. Max. Units RF FUNCTIONAL TESTS CW Output Power (P2dB) VDD = 50 V, IDQ = 25 mA, PIN = 0.3 W POUT 10 11 - W 1.3 GHz Power Gain (P2dB) 1.3 GHz VDD = 50 V, IDQ = 25 mA GP 18 19 dB Drain Efficiency @ 1.3 GHz VDD = 50 V, IDQ = 25 mA, POUT = 10 W ηD 45 % Load Mismatch Stability VDD = 50 V, IDQ = 25 mA, PIN = 0.3 W VSWR-S 5:1 - - - Load Mismatch Tolerance VDD = 50 V, IDQ = 25 mA, PIN = 0.3 W VSWR-T 10:1 - - - Test Fixture Impedance Freq. (MHz) Z (Ω) Z (Ω) IN-OPT OUT-OPT 1300 3.6 + j6.9 38.3 + j20.5 333 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 1.2—1.4 GHz Typical CW Performance Freq. P P Gain I Eff. V I OUT OUT D D DQ (GHz) (dBm) (W) (dB) (A) (%) (V) (mA) 1.20 40.0 10.0 17.5 0.49 41 50 25 1.30 40.0 10.0 18.4 0.40 44 - - 1.40 40.0 10.0 17.8 0.50 40 - - 3.3 GHz Typical CW Performance Freq. P2dB P Gain I Eff. V I OUT D D DQ (GHz) (dBm) (W) (dB) (A) (%) (V) (mA) 3.30 40.3 10.7 16.2 0.38 57 50 25 1.2—1.4 GHz Test Fixture 444 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 1.2—1.4 GHz Performance With Pulsed Signal V = 50 V D I = 25 mA DQ Pulse = 100 μs Duty = 15% 555 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 1.2—1.4 GHz Matching Circuit For Rogers RT6010.2LM 666 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Outline Drawings MAGX-000035-010000 MAGX-000035-01000S 777 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 CORRECT DEVICE SEQUENCING TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set V to the pinch-off (V ), typically -5 V. 1. Turn the RF power off. GS P 2. Turn on V to nominal voltage (50 V). 2. Decrease V down to V . DS GS P 3. Increase V until the I current is reached. 3. Decrease V down to 0 V. GS DS DS 4. Apply RF power to desired level. 4. Turn off V . GS 888 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298