Thyristors Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG MAC9DG, MAC9MG, MAC9NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Blocking Voltage to 800 Volts • On−State Current Rating of 8.0 Amperes RMS at 100°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dv/dt − 500 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO−220 Package • High Commutating di/dt − 6.5 A/ms minimum at 125°C Pin Out • These Devices are Pb−Free and are RoHS Compliant Functional Diagram MT2 MT1 G CASE 221A STYLE 4 1 Additional Information 2 Datasheet Resources Samples © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG Maximum Ratings (T = 25°C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , (Gate Open, Sine Wave 50 to 60 Hz, T = 25° to 100°C) DRM J MAC9SD V 400 V RRM MAC9M 600 MAC9N 800 On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 100°C) I 8.0 A C T (RMS) Peak Non-Repetitive Surge Current I 80 A (One Full Cycle Sine Wave, 60 Hz, T = 125°C) TSM J Circuit Fusing Consideration (t = 8.3 ms) I2t 26 A²sec Peak Gate Power P 16 W GM (Pulse Width ≤ 1.0 µs, T = 80°C) C Average Gate Power (t = 8.3 ms, T = 80°C) P 0.35 W C G (AV) Operating Junction Temperature Range T -40 to +125 °C J Storage Temperature Range T -40 to +150 °C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction−to−Case (AC) R 2.2 8JC °C/W Junction−to−Ambient R 62.5 8JA Maximum Lead Temperature for Soldering Purposes, 1/8” from case for T 260 °C 10 seconds L © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG Electrical Characteristics - OFF (T = 25°C unless otherwise noted ; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current T = 25°C I , - - 0.01 (V = V = V ; Gate Open) J DRM mA D DRM RRM I TJ = 125°C RRM - - 2.0 Electrical Characteristics - ON (T = 25°C unless otherwise noted; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak On−State Voltage (Note 2) (I = ±11 A) V − 1.2 1.6 V TM TM MT2(+), G(+) 10 16 50 Gate Trigger Current MT2(+), G(−) I 10 18 50 mA (Continuous dc) GT (V = 12 V, R = 100 Ω) D L MT2(−), G(−) 10 22 5.0 Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA)) IH – 30 50 mA MT2(+), G(+) _ 20 50 Latching Current MT2(+), G(−) I _ 30 80 mA (V = 24 V, I = 50 mA) L D G MT2(−), G(−) _ 20 50 MT2(+), G(+) 0.5 0.69 1.5 Gate Trigger Voltage MT2(+), G(−) V 0.5 0.77 1.5 V (V = 12 V, R = 100 Ω) GT D L MT2(−), G(−) 0.5 0.72 1.5 MT2(+), G(+) 0.2 _ _ Gate Non−Trigger Voltage MT2(+), G(−) V 0.2 _ _ V (V = 12 V, R = 100 Ω, T = 125°C) GD D L J MT2(−), G(−) 0.2 _ _ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Rate of Change of Commutating Current See Figure 10. (V = 400 V, I = 4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, T = 125°C, dV/dt 6.5 − − A/ms D TM J f = 250 Hz, No Snubber) C = 10 µF L = 40 mH L L Critical Rate of Rise of Off-State Voltage (V = Rated V , Exponential Waveform, R = 510 Ω, T = 125°C) dV/dt 500 − − V/µs D DRM GK J © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG Voltage Current Characteristic of SCR Symbol Parameter +Current Quadrant 1 V Peak Repetitive Forward Off State Voltage MainTerminal 2 + DRM VTM I Peak Forward Blocking Current on state DRM IH IRRMat VRRM V Peak Repetitive Reverse Off State Voltage RRM off state +Voltage I Peak Reverse Blocking Current IH IDRMat VDRM RRM Quadrant 3 VTM V Maximum On State Voltage TM I Holding Current H Quadrant Definitions for a Triac Quadrant II Quadrant I I Quadrant III Quadrant IV All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 125 12 DC E (C)° 120 α = 120, 90, 60, 30° WATTS) 10 180° UR R ( 8 AT 115 WE 120° ER O MP α = 180° E P 6 E G E T 110 RA 60° S E 4 T, CAC105 DC P, AVAV 2 α = 30° 90° 100 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 IT(RMS) IT(RMS) Figure 3. On−State Characteristics Figure 4. Thermal Response 100 E 1 C N A TYPICAL AT T S TJ = 25°C SI E R L D) MAXIMUM @ JT = 125°C MAZE ERALI0.1 HM TR T O NN 10 r(t), TRANSIE (0.010.1 1 10 100 1000 4 t, TIME (ms) Figure 5. Hold Current Variation 40 MAXIMUM @ JT = 25°C IT 1 35 A) m 30 T ( N MT2 POSITIVE RE 25 R U C D 20 L O H , H15 I MT2 NEGATIVE 10 5 0.1 10 90 0 0 0.51 1.52 2.53 3.54 45 .5 VT TJ, JUNCTION TEMPERATURE °(C) © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation 100 1 NT (mA) Q2 E (VOLT) 00..089.559 Q2Q3 I, GATE TRIGGER CURREGT10 Q1 Q3 V, GATE TRIGGER VOLTAGGT 0000...00004567....55555678 Q1 1 0.4 10 50 90 110 130 70 TJ, JUNCTION TEMPERATURE °(C) TJ, JUNCTION TEMPERATURE °(C) Figure 8. Critical Rate of Rise of Off-State Voltage Figure 9. Critical Rate of Rise of CommutatingVoltage (Exponential) ) sµ (V/ 100 5000 4.5K OF E ) 4K RIS V/sµ 32..5532KKKK MT2 NEGATIVE RITICAL RATE OF (TATING VOLTAGE 10 TJ = 125°C 100°C 75°C C U 1.5K dt), cOMM tw f =21 tw 51110KKK0 MT2 POSITIVE (dv/ C VDRM (di/dt)c =61f0 I0T0M 1 0 10 15 20 25 30 35 40 45 50 55 60 1 10 100 1000 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) LL 1N4007 200 VRMS ADJUST FOR MEASURE ITM, 60 Hz VAC I CHARGE L CHARGE TRIGGER CONTROL TRO - 200 V ON + C R MT2 GGE 1N91451 RI MT1 T G CL © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG Dimensions Part Marking System SEATING PLANE B F C T S Q 4 A MAC9xG AYWW 12 3 U H 1 CASE 221A 2 K 3 STYLE 4 Z x= D, M, or N A= Assembly Location L R Y= Year V J WW = Work Week G D N Pin Assignment 1 Main Terminal 1 Inches Millimeters Dim 2 Main Terminal 2 Min Max Min Max A 0.570 0.620 14.48 15.75 3 Gate B 0.380 0.405 9.66 10.28 4 Main Terminal 2 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 Ordering Information G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 Device Package Shipping J 0.014 0.022 0.36 0.55 MAC9DG K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 TO-220 MAC9MG 50 Units / Rail N 0.190 0.210 4.83 5.33 (Pb-Free) Q 0.100 0.120 2.54 3.04 MAC9NG R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17