Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN MAC4DSM, MAC4DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size Surface Mount DPAK Package • Passivated Die for Reliability and Uniformity • Blocking Voltage to 800 V • On−State Current Rating of 4.0 A RMS at 108°C • Low IGT − 10 mA Maximum in 3 Quadrants • High Immunity to dv/dt − 50 V/μs at 125°C • Epoxy Meets UL 94 V−0 @ 0.125 in Pin Out • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • Pb−Free Packages are Available 4 4 1 2 Functional Diagram 3 1 2 MT2 MT1 G Additional Information Datasheet Resources Samples © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN Maximum Ratings (T = 25°C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , DRM (Gate Open, Sine Wave 50 to 60 Hz, T = -40° to 110°C) J MAC4DSM VRRM 600 V MAC4DSN 800 On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 108°C) I 4.0 A C T (RMS) Peak Non-Repetitive Surge Current I 40 A (One Full Cycle Sine Wave, 60 Hz, T = 108°C) TSM C Circuit Fusing Consideration (t = 8.3 msec) I2t 6.6 A²sec Peak Gate Current (Pulse Width ≤ 20 µsec, T = 108°C) I 4.0 W C GM Peak Gate Power (Pulse Width ≤ 10 µsec, T = 108°C) P 2.0 W C GM Peak Gate Voltage (Pulse Width ≤ 20 µsec, T = 108°C) V 5.0 V C GM Average Gate Power (t = 8.3 msec, T = 108°C) P 1.0 W C G(AV) Operating Junction Temperature Range T -40 to +125 °C J Storage Temperature Range T -40 to +150 °C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit R Thermal Resistance, Junction−to−Case (AC) 8JC 3.5 Junction−to−Ambient R 88 °C/W 8JA Junction−to−Ambient (Note 2) R 80 8JA Maximum Lead Temperature for Soldering Purposes, 1/8” from case for T 260 °C 10 seconds (Note 3) L 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8" from case for 10 seconds. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN Electrical Characteristics - OFF (T = 25°C unless otherwise noted ; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current TJ = 25°C I , - - 0.01 (V = V = V ; Gate Open) DRM mA D D R M R R M T = 125°C IRRM - - 2.0 J Electrical Characteristics - ON (T = 25°C unless otherwise noted; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak On−State Voltage (Note 4) (I = ±6.0 A) V − 1.3 1.6 V TM TM MT2(+), G(+) 2.9 4.0 10 Gate Trigger Current MT2(+), G(−) I 2.9 5.0 10 mA (Continuous dc) GT (V = 12 V, R = 100 Ω) D L MT2(−), G(−) 2.9 7.0 10 Holding Current (V = 12 V, Gate Open, Initiating Current = ±200 mA)) I 0.2 5.5 1.5 mA D H MT2(+), G(+) _ 6.0 30 Latching Current MT2(+), G(−) I _ 10 30 mA L MT2(−), G(−) _ 6.0 30 MT2(+), G(+) 0.5 0.7 1.3 Gate Trigger Voltage (Continuous dc) MT2(+), G(−) V 0.5 0.65 1.3 V GT (V = 12 V, R = 100 Ω) D L MT2(−), G(−) 0.5 0.7 1.3 MT2(+), G(+) 0.2 0.4 − Gate Non−Trigger Voltage (T = 125°C) MT2(+), G(−) V 0.2 0.4 − V J GD (V = 12 V, R = 100 Ω) D L MT2(−), G(−) 0.2 0.4 − 4. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Rate of Change of Commutating Current (V = 400 V, I = 3.5 A, Commutating dv/dt = 10 V/µsec, Gate Open, D TM (dI/dt)c 3.0 4.0 − A/ms T = 125°C, f = 500 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber) See Figure 16 J Critical Rate of Rise of Off-State Voltage dV/dt 50 175 − V/µs (V = 0.67 x V , Exponential Waveform, Gate Open, T = 125°C) D DRM J Voltage Current Characteristic of SCR Symbol Parameter +Current V Peak Repetitive Forward Off State Voltage Quadrant 1 DRM MainTerminal 2 + VTM I Peak Forward Blocking Current DRM on state IH V Peak Repetitive Reverse Off State Voltage IRRM at VRRM RRM I Peak Reverse Blocking Current off state +Voltage RRM IH IDRM at VDRM V Maximum On State Voltage Quadrant 3 TM MainTerminal 2 VTM I Holding Current H Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 QuadrantII ( ) IGT (+) IGT QuadrantI GATE GATE MT1 MT1 REF REF IGT +IGT ( ) MT2 ( ) MT2 QuadrantIII ( ) IGT (+) IGT QuadrantIV GATE GATE MT1 MT1 REF REF MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With inphase signals (using standard AC lines) quadrants I and III are used. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN Figure 1. Typical RMS Current Derating Figure 2. On-State Power Dissipation Figure 3. On−State Characteristics Figure 4. Transient Thermal Response MPS)100 ED) 1.0 E CURRENT (A 10 TYPICAL @ TJ = 25°C MAXIMUM @ JT = 125°C CE (NORMALIZ US ON-STAT MAXIMUM @ JT = 25°C T RESISTAN 0.1 Z JC(t) = R JC(t)r(t) O 1.0 N E E I, INSTANTANT0.10 1.0 2.0 3.0 4.0 5.0 r, TRANSI(t) 0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms) VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical Gate Trigger Current vs, Junction Temperature Figure 6. Typical Gate Trigger Voltage vs. Junction Temperature © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN Figure 7. Typical Holding Current vs. Junction Temperature Figure 8. Typical Latching Current vs.Junction Temperature 14 25 Q2 12 A) A) 20 m m T ( 10 T ( N MT2 NEGATIVE N Q1 E E RR 8.0 RR 15 CU CU Q3 DING 6.0 MT2 POSITIVE HING 10 L C HO 4.0 AT I, H , LIL5.0 2.0 0 0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Exponential Static dv/dt vs. Figure 10. Exponential Static dv/dt vs. Gate−MT1 Resistance, MT2(+) Gate−MT1 Resistance, MT2(-) 1000 1200 TJ = 125°C TJ = 125°C 1000 VPK = 400 V 800 STATIC dv/dt (V/ s) 640000 600 V VPK = 400 V STATIC dv/dt (V/ s) 864000000 600 V 200 800 V 200 800 V 0 0 100 1000 10 k 100 1000 10 k RG-MT1, GATE-MT1 RESISTANCE (OHMS) RG-MT1, GATE-MT1 RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt vs. Figure 10. Exponential Static dv/dt vs. Gate−MT1 Resistance, MT2(+) Gate−MT1 Resistance, MT2(-) 800 2000 GATE OPEN 1600 GATE OPEN C dv/dt (V/ s) 640000 110°C TJ = 100°C C dv/dt (V/ s)1200 TJ = 100°C 110°C STATI 125°C STATI 800 125°C 200 400 0 0 400 500 600 700 800 400 500 600 700 800 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS) © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN Figure 13. Typical Holding Current vs. Junction Temperature Figure 14. Typical Latching Current vs.Junction Temperature 800 1600 GATE OPEN 1400 GATE OPEN 600 VPK = 400 V 1200 VPK = 400 V V/ s) V/ s) 1000 dt ( dt ( C dv/ 400 600 V C dv/ 800 600 V ATI ATI 600 T T S S 200 400 800 V 200 800 V 0 0 100 105 110 115 120 125 100 105 110 115 120 125 TJ, JUNCTION TEMPERATURE °(C) TJ, JUNCTION TEMPERATURE °(C) Figure 15. Typical Holding Current vs. Junction Temperature 100 VPK = 400 V OFs) ATE OF RISE OLTAGE (V/ TJ = 125°C 100°C 75°C dv/dt(c), CRITICAL RCOMMUTATING V 10 VDRMtw f (=di/2d1 ttw)c =61f0 I0T0M 1.0 0 5.0 10 15 20 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) LL 1N4007 200 VRMS ADJUST FOR MEASURE TM, 60 Hz VAC I CHARGE L CHARGE TRIGGER CONTROL TRO - 200 V ON + R C MT2 GGE 1N91451 RI MT1 T G CL Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN Dimensions Soldering Footprint DPAK CASE 369C 6.20 3.0 ISSUE O 0.244 0.118 2.58 T SEATING PLANE 0.101 B C V R E 5.80 1.6 6.172 0.228 0.063 0.243 4 Z A S 12 3 U mm K SCALE 3:1 inches F J L H D2 PL G 0.13 (0.005) M T Inches Millimeters Dim Min Max Min Max A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.090 BSC 2.29 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 600V - 800V > MAC4DSM, MAC4DSN Dimensions Part Marking System DPAK 3 4 01 DPAK CASE 369C YWW 1 2 STYLE 6 AC 3 4DSxG B C V R E 4 4 DPAK 3 YWW Z A CASE 369D AC S 4DSxG 12 3 STYLE 6 1 T 2 3 SEATING PLANE K Y= Year WW = Work Week F J AC4DCx = Device Code H x= M or N D3 PL G= Pb Free Package G 0.13 (0.005) M T Pin Assignment Inches Millimeters Dim 1 Main Terminal 1 Min Max Min Max 2 Main Terminal 2 A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 3 Gate C 0.086 0.094 2.19 2.38 4 Main Terminal 2 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 Ordering Information F 0.037 0.045 0.94 1.14 G 0.090 BSC 2.29 BSC Package Device Package Shipping H 0.034 0.040 0.87 1.01 Type J 0.018 0.023 0.46 0.58 MAC4DSM−001 DPAK−3 369D 75 Units / Rail K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 DPAK−3 MAC4DSM−001G 369D 75 Units / Rail (Pb−Free) S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 2500 / Tape & MAC4DSMT4 DPAK−3 369C Reel Z 0.155 −−− 3.93 −−− DPAK−3 2500 / Tape & 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, MAC4DSMT4G (Pb−Free) 369C Reel 1982. 2. CONTROLLING DIMENSION: INCH. MAC4DSN−001 DPAK−3 369D 75 Units / Rail STYLE 6: PIN 1. MT1 DPAK−3 MAC4DSN−001G 369D 75 Units / Rail 2. MT2 (Pb−Free) 3. GATE 4. MT2 MAC4DSNT4 DPAK−3 369C 2500 / Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17