MAC223A6 4Q Triac 15 September 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78 (T0-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. 2. Features and benefits • High blocking voltage capability • High noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in all four quadrants 3. Applications • General purpose motor controls • General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 400 V DRM state voltage I RMS on-state current full sine wave; T ≤ 91 °C; Fig. 1; - - 25 A T(RMS) mb Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; - - 190 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p full sine wave; T = 25 °C; - - 230 A j(init) t = 16.7 ms p T junction temperature - - 125 °C j Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 6 50 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; - 10 50 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; - 11 50 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G+; - 23 75 mA D T T = 25 °C; Fig. 7 j I holding current V = 12 V; T = 25 °C; T2+; Fig. 9 - 7 30 mA H D j

WeEn Semiconductors MAC223A6 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V; T = 25 °C; T2-; Fig. 9 - 12 30 mA D j V on-state voltage I = 30 A; T = 25 °C; Fig. 10 - 1.3 1.55 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 268 V; T = 125 °C; (V = 67% 100 300 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dV /dt rate of change of V = 400 V; T = 95 °C; dI /dt = 9 A/ - 10 - V/µs com D j com commutating voltage ms; I = 25 A; gate open circuit T 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb T2 mounting base; main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version MAC223A6 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78 hole; 3-lead TO-220AB MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 2 / 13

WeEn Semiconductors MAC223A6 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 400 V DRM voltage I RMS on-state current full sine wave; T ≤ 91 °C; Fig. 1; Fig. 2; - 25 A T(RMS) mb Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; - 190 A TSM j(init) p state current Fig. 4; Fig. 5 full sine wave; T = 25 °C; t = 16.7 ms - 230 A j(init) p 2 2 I t I t for fusing t = 10 ms; SIN - 180 A²s p dI /dt rate of rise of on-state I = 200 mA; T2+ G+ - 50 A/µs T G current IG = 200 mA; T2+ G- - 50 A/µs I = 200 mA; T2- G- - 50 A/µs G I = 200 mA; T2- G+ - 10 A/µs G I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature -40 150 °C stg T junction temperature - 125 °C j 003aad994 003aad995 80 30 IT(RMS) IT(RMS) (A) (A) 60 20 40 10 20 0 0 10-2 10-1 1 10 -50 0 50 100 150 surge duration (s) Tmb(°C) f = 50 Hz; T = 91 °C mb Fig. 2. RMS on-state current as a function of mounting Fig. 1. RMS on-state current as a function of surge base temperature; maximum values duration; maximum values MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 3 / 13

WeEn Semiconductors MAC223A6 4Q Triac 003aad991 40 conduction form Ptot angle, α factor (W) (degrees) a α α=180° 30 2.816 30 120° 60 1.967 90 1.570 90° α 120 1.329 60° 180 1.110 20 30° 10 0 0 10 20 30 IT(RMS) (A) α = conduction angle a = form factor = I / I T(RMS) T(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aad992 200 ITSM (A) 150 100 IT ITSM 50 t 1/f Tj(init) = 25 °C max 0 1 10 102 103 number of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 4 / 13

WeEn Semiconductors MAC223A6 4Q Triac 103 003aad993 ITSM (A) (1) (2) 102 IT ITSM t tp Tj(init) = 25 °C max 10 10-5 10-4 10-3 10-2 10-1 tp(s) t ≤ 20 ms p (1) dI /dt limit T (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 5 / 13

WeEn Semiconductors MAC223A6 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full cycle; Fig. 6 - - 1 K/W th(j-mb) from junction to half cycle; Fig. 6 - - 1.4 K/W mounting base R thermal resistance in free air - 60 - K/W th(j-a) from junction to ambient free air 003aad996 10 Zth(j-mb) (K/W) (1) 1 (2) 10-1 P 10-2 tp t 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 6 / 13

WeEn Semiconductors MAC223A6 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 6 50 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; - 10 50 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; - 11 50 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G+; - 23 75 mA D T T = 25 °C; Fig. 7 j I latching current V = 12 V; I = 0.1 A; T2+ G+; - 8 40 mA L D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2+ G-; - 30 60 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G-; - 18 40 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G+; - 15 60 mA D G T = 25 °C; Fig. 8 j I holding current V = 12 V; T = 25 °C; T2+; Fig. 9 - 7 30 mA H D j V = 12 V; T = 25 °C; T2-; Fig. 9 - 12 30 mA D j V on-state voltage I = 30 A; T = 25 °C; Fig. 10 - 1.3 1.55 V T T j V gate trigger voltage V = 12 V; I = 0.1 A; T = 25 °C; - 0.7 1 V GT D T j Fig. 11 V = 400 V; I = 0.1 A; T = 125 °C; 0.25 0.4 - V D T j Fig. 11 I off-state current V = 400 V; T = 125 °C - 0.1 0.5 mA D D j Dynamic characteristics dV /dt rate of rise of off-state V = 268 V; T = 125 °C; (V = 67% 100 300 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dV /dt rate of change of V = 400 V; T = 95 °C; dI /dt = 9 A/ - 10 - V/µs com D j com commutating voltage ms; I = 25 A; gate open circuit T t gate-controlled turn-on I = 30 A; V = 400 V; I = 0.1 A; dI / - 2 - µs gt TM D G G time dt = 5 A/µs MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 7 / 13

WeEn Semiconductors MAC223A6 4Q Triac 003aad998 003aae000 5 3 IGT IGT(25°C) IL 4 IL(25°C) 2 3 (4) (3) (2) 2 (1) 1 1 0 0 -50 0 50 100 150 -50 0 50 100 150 Tj (°C) Tj (°C) (1) T2+ G+ Fig. 8. Normalized latching current as a function of (2) T2+ G- junction temperature (3) T2- G- (4) T2- G+ Fig. 7. Normalized gate trigger current as a function of junction temperature 003aae001 003aad990 3 80 IT IH (A) IH(25°C) 60 2 40 1 (1) (2) (3) 20 0 0 -50 0 50 100 150 0 0.5 1 1.5 2 2.5 Tj (°C) VT(V) V = 1.073 V; R = 0.015 Ω Fig. 9. Normalized holding current as a function of o s (1) T = 125 °C; typical values junction temperature j (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 10. On-state current as a function of on-state voltage MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 8 / 13

WeEn Semiconductors MAC223A6 4Q Triac 003aad999 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 150 Tj (°C) Fig. 11. Normalized gate trigger voltage as a function of junction temperature MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 9 / 13

WeEn Semiconductors MAC223A6 4Q Triac 10. Package outline Plasticsingle-endedpackage;heatsinkmounted;1mountinghole; 3-leadTO-220AB SOT78 E A p A1 q mounting D1 base D L1(1) L2(1) Q b1(2) L (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10mm scale DIMENSIONS(mmaretheoriginaldimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) mL2a(1x). p q Q 4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6 mm 2.54 3.0 4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2 Notes 1.Leadshoulderdesignsmayvary. 2.Dimensionincludesexcessdambar. OUTLINE REFERENCES EUROPEAN ISSUEDATE VERSION IEC JEDEC JEITA PROJECTION 08-04-23 SOT78 3-leadTO-220AB SC-46 08-06-13 Fig. 12. Package outline TO-220AB (SOT78) MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 10 / 13

WeEn Semiconductors MAC223A6 4Q Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 11. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no Objective Development This document contains data from liability for inclusion and/or use of WeEn Semiconductors products in such [short] data the objective specification for product equipment or applications and therefore such inclusion and/or use is at the sheet development. customer’s own risk. Preliminary Qualification This document contains data from the Quick reference data — The Quick reference data is an extract of the [short] data preliminary specification. product data given in the Limiting values and Characteristics sections of this sheet document, and as such is not complete, exhaustive or legally binding. Product Production This document contains the product Applications — Applications that are described herein for any of these [short] data specification. products are for illustrative purposes only. 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The latest product status information is available on customer’s applications and products planned, as well as for the planned the Internet at URL http://www.ween-semi.com. application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Definitions WeEn Semiconductors does not accept any liability related to any default, Draft — The document is a draft version only. The content is still under damage, costs or problem which is based on any weakness or default internal review and subject to formal approval, which may result in in the customer’s applications or products, or the application or use by modifications or additions. WeEn Semiconductors does not give any customer’s third party customer(s). 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Limiting values are stress ratings only and (proper) relevant full data sheet, which is available on request via the local WeEn operation of the device at these or any other conditions above those Semiconductors sales office. In case of any inconsistency or conflict with the given in the Recommended operating conditions section (if present) or the short data sheet, the full data sheet shall prevail. Characteristics sections of this document is not warranted. Constant or Product specification — The information and data provided in a Product repeated exposure to limiting values will permanently and irreversibly affect data sheet shall define the specification of the product as agreed between the quality and reliability of the device. WeEn Semiconductors and its customer, unless WeEn Semiconductors and No offer to sell or license — Nothing in this document may be interpreted customer have explicitly agreed otherwise in writing. In no event however, or construed as an offer to sell products that is open for acceptance or the shall an agreement be valid in which the WeEn Semiconductors product grant, conveyance or implication of any license under any copyrights, patents is deemed to offer functions and qualities beyond those described in the or other industrial or intellectual property rights. Product data sheet. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Disclaimers authorization from competent authorities. Limited warranty and liability — Information in this document is believed Non-automotive qualified products — Unless this data sheet expressly to be accurate and reliable. However, WeEn Semiconductors does not states that this specific WeEn Semiconductors product is automotive give any representations or warranties, expressed or implied, as to the qualified, the product is not suitable for automotive use. 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MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 11 / 13

WeEn Semiconductors MAC223A6 4Q Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 12 / 13

WeEn Semiconductors MAC223A6 4Q Triac 12. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values.............................................................3 8. Thermal characteristics...............................................6 9. Characteristics..............................................................7 10. Package outline........................................................10 11. Legal information.....................................................11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 15 September 2018 MAC223A6 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 13 / 13

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