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MAC08MT1G产品简介:
ICGOO电子元器件商城为您提供MAC08MT1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MAC08MT1G价格参考¥0.94-¥1.25。ON SemiconductorMAC08MT1G封装/规格:晶闸管 - TRIAC, TRIAC Logic - Sensitive Gate 600V 800mA Surface Mount SOT-223。您可以下载MAC08MT1G参考资料、Datasheet数据手册功能说明书,资料中有MAC08MT1G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRIAC SENS GATE 600V 0.8A SOT223双向可控硅 THY .8A 600V TRIAC |
产品分类 | 双向可控硅分离式半导体 |
GateTriggerCurrent-Igt | 10 mA |
GateTriggerVoltage-Vgt | 2 V |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体闸流管,双向可控硅,ON Semiconductor MAC08MT1G- |
数据手册 | |
产品型号 | MAC08MT1G |
PCN设计/规格 | |
三端双向可控硅类型 | 逻辑 - 灵敏栅极 |
不重复通态电流 | 8 A |
产品目录页面 | |
产品种类 | 双向可控硅 |
供应商器件封装 | SOT-223 |
保持电流Ih最大值 | 5 mA |
关闭状态漏泄电流(在VDRMIDRM下) | 10 uA |
其它名称 | MAC08MT1GOSDKR |
包装 | Digi-Reel® |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-261-4,TO-261AA |
封装/箱体 | SOT-223 |
工厂包装数量 | 1000 |
开启状态RMS电流-ItRMS | 0.8 A |
开启状态电压 | 1.9 V |
最大工作温度 | + 110 C |
最大转折电流IBO | 8 A |
最小工作温度 | - 40 C |
栅极触发电压-Vgt | 2 V |
栅极触发电流-Igt | 10 mA |
标准包装 | 1 |
电压-断态 | 600V |
电压-栅极触发(Vgt)(最大值) | 2V |
电流-不重复浪涌50、60Hz(Itsm) | 8A @ 60Hz |
电流-保持(Ih)(最大值) | 5mA |
电流-栅极触发(Igt)(最大值) | 10mA |
电流-通态(It(RMS))(最大值) | 800mA |
系列 | MAC08M |
配置 | 单一 |
零件号别名 | MAC08BT1G |
额定重复关闭状态电压VDRM | 600 V |
Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 MAC08BT1, MAC08MT1 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Sensitive Gate Trigger • Surface Mount Package Current in Four Trigger • Pb−Free Packages are Modes Available • Blocking Voltage to 600 Volts • Glass Passivated Surface for Reliability and Uniformity Pin Out Functional Diagram 4 MT 2 MT 1 G Additional Information 1 2 3 Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19
Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Maximum Ratings (T = 25°C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) MAC08BT1 V , 200 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40° to 110°C) MAC08MT1 V 600 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80°C) I 0.8 A C T (RMS) Peak Non-Repetitive Surge Current I 8.0 A (One Full Cycle Sine Wave, 60 Hz, T= 25°C) TSM C Circuit Fusing Consideration (t = 8.3 msec) I2t 0.4 A²sec Peak Gate Power (Pulse Width ≤ 10 µsec, T= 80°C) P 5.0 W C GM Average Gate Power (t = 8.3 msec, T= 80°C) P 0.1 W C G(AV) Operating Junction Temperature Range T -40 to +110 °C J Storage Temperature Range T -40 to +150 °C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential DRM RRM on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 R 156 °C/W 8JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8" from case for 10 seconds. Electrical Characteristics - OFF (T = 25°C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit †Peak Repetitive Blocking Current TJ = 25°C IDRM, - - 10 µA (VAK = VDRM = VRRM; Gate Open) TJ = 110°C IRRM - - 200 mA Electrical Characteristics - ON (T = 25°C unless otherwise noted; Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit Peak On−State Voltage (Note 2) (I = ±1.1 A) V − − 1.9 V TM TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 Ω) I – – 10 mA D L GT Holding Current (V = 12 V, Gate Open, Initiating Current = ±20 mA)) I − − 5.0 mA D H Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 Ω) V – – 2.0 V D L GT 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Commutation Voltage (f = 250 Hz, I = 1.0 A, Commutating di/dt = 1.5 A/mS TM On−State Current Duration = 2.0 mS, V = 200 V, (dI/dt)c 1.5 − − A/ms DRM Gate Unenergized, T = 110°C, C Gate Source Resistance = 150 Ω, See Figure 10) Critical Rate of Rise of Off-State Voltage dV/dt 10 − − V/µs (V = 0.67 x V , Exponential Waveform, Gate Open, T = 110°C) D DRM J © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19
Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Voltage Current Characteristic of SCR Symbol Parameter +Current V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Quadrant 1 VRRM Peak Repetitive Reverse Off State Voltage TM Main Terminal 2+ I Peak Reverse Blocking Current On State RRM I V Maximum On State Voltage IRRM at VRRM H TM I Holding Current H Off State +Voltage IH IDRM at VDRM Quadrant 3 V Main Terminal 2- TM Figure 1. PCB for Thermal Impedance and Power Testing Quadrant Definitions for a Triac of SOT-223 0.15 MT2 Positive 3.8 (Positive Half Cycle) 0.079 2.0 + 0.244 0.091 0.091 6.2 (+) MT 2 (+) MT 2 2.3 2.3 0.079 2.0 Quadrant II (-) IGT (-) IGT Quadrant I 0.059 0.059 0.059 inmchmes Gate Gate 0.984 1.5 1.5 1.5 25.0 MT 1 MT 1 REF REF IGT + IGT (-) MT 2 (-) MT 2 0.096 0.096 0.096 2.44 2.44 2.44 (-) I (-) I 0.059 0.059 Quadrant III GT GT Quadrant IV 1.5 1.5 Gate Gate MT 1 MT 1 0.472 12.0 REF REF BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MT2 Negative MATERIAL: G10 FIBERGLASS BASE EPOXY (Negative Half Cycle) All Polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19
Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Figure 3. Junction to Ambient Thermal Resistance vs. Figure 2. On-State Characteristics Copper Tab Area PS) 10 M A T ( N E R R U C 1.0 E AT T S N- O S U 0.1 O E AN TYPICAL AT TJ = 110°C NT MAX AT TJ = 110°C TA MAX AT TJ = 25°C S N0.01 I, IT 0 1.0 2.0 3.0 4.0 5.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 4. Current Derating, Minimum Pad Size Reference: Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature Ambient Temperature C) E ( ° R U110 T A ER100 α MP 30° α E90 60° TT 90° α = CONDUCTION N80 ANGLE E BI dc M70 EA α = 180° BL60 120° A W O50 LL MINIMUM FOOTPRINT M A40 50 OR 60 Hz U M30 XI A20 M 0 0.1 0.2 0.3 0.4 0.5 , A T IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 6. Current Derating, 2.0 cm Square Pad Reference: Figure 7. Current Derating Reference: MT2 Tab Ambient Temperature © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19
Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Figure 9. Thermal Response, Device Mounted on Figure 1 Figure 8. Power Dissipation Printed Circuit Board Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) Figure 11. Typical Commutating dv/dt versus Current Crossing Figure 12. Typical Commutating dv/dt versus Junction Rate and Junction Temperature Temperature at 0.8 Amps RMS 10 10 60 Hz 80° 60° 180 Hz 400 Hz dt dt OMMUTATING dv/µdv/dt , (V/ S)c ITM 110° 100° OMMUTATING dv/µdv/dt , (V/ S)c VDRM = 200V 300 Hz C tw C 1 f = 2 tw TM 1.0 VDRM (didt)c 1000 1.0 1.01 0 60 70 80 90 100 110 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (°C) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19
Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Figure 13. Exponential Static dv/dt versus Gate − Figure 14. Typical Gate Trigger Current Variation Main Terminal 1 Resistance 60 10 600 Vpk A) IGT3 TJ = 110°C T (m µdt (V/ s) 5400 MAINP OTSEIRTMIVIENAL #2 GER CURREN1.0 IGTI1GT2 IGT4 STATIC dv/ 30 , GATE TRIGT MAIN TERMINAL #1 G I POSITIVE 20 0.1 10 100 1000 10,000 0 40 60 80 RG TJ, JUNCTION TEMPERATURE (°C) Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation 6.0 1.1 S) HOLDING CURRENT (mA) 5432....0000 MAIMNA TIENPR OMTSEIINRTMAIVLIEN #A1L #2 TE TRIGGER VOLTAGE (VOLT VGT2 VGT1 VGT3 VGT4 ,I H1.0 POSITIVE V , GAGT 0 0.3 02 01 40 60 80 00 02 01 40 60 80 00 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19
Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Dimensions Part Marking System D 4 b1 SOT-223 4 Case 318E AC08x HE E Style 11 YMAXX 12 3 1 2 3 b e1 e AC08X =Device Code x =D, M, or N Y =Year C M =Month A A =Assembly Site 0.08 (0003) XX =Lot Serial Code A1 G =Pb-Free Package L1 Inches Millimeters Soldering Footprint Dim Min Nom Max Min Nom Max A --- --- 0.071 --- --- 1.80 3.8 0.15 A1 0.001 0.003 0.005 0.02 0.07 0.13 b 0.026 0.030 0.033 0.66 0.75 0.84 2.0 0.079 b1 0.114 0.118 0.122 2.90 3.00 3.10 c 0.009 0.011 0.014 0.23 0.29 0.35 D 0.260 0.260 0.264 6.60 6.60 6.71 6.3 E 0.130 0.138 0.146 3.30 3.50 3.70 2.3 2.3 0.248 0.091 0.091 e --- 0.091 --- --- 2.30 --- e1 0.030 0.037 0.045 0.75 0.95 1.15 L1 0.059 0.069 0.079 1.50 1.75 2.00 2.0 0.079 HE 0.268 0.276 0.283 6.80 7.00 7.20 ø 0° --- 10° 0° --- 10° 1.5 mm 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 0.059 SCALE 6: 1 inches 2. CONTROLLING DIMENSION: INCH. Ordering Information Device Package Type Shipping Pin Assignment 1 Main Terminal 1 MAC08BT1 SOT−223 1000 / Tape & Reel SOT−223 2 Main Terminal 2 MAC08BT1G 1000 / Tape & Reel (Pb−Free) 3 Gate MAC08MT1 SOT−223 1000 / Tape & Reel 4 Main Terminal 2 SOT−223 MAC08MT1G 1000 / Tape & Reel (Pb−Free) Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19