Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 MAC08BT1, MAC08MT1 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Sensitive Gate Trigger Current in Four Trigger Modes • Blocking Voltage to 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Pb−Free Packages are Available Pin Out Functional Diagram 4 MT2 MT1 G 1 2 3 Additional Information Datasheet Resources Samples © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18

Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Maximum Ratings (T = 25°C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) MAC08BT1 V , 200 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40° to 110°C) MAC08MT1 V 600 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80°C) I 0.8 A C T (RMS) Peak Non-Repetitive Surge Current I 8.0 A (One Full Cycle Sine Wave, 60 Hz, T= 25°C) TSM C Circuit Fusing Consideration (t = 8.3 msec) I2t 0.4 A²sec Peak Gate Power (Pulse Width ≤ 10 µsec, T= 80°C) P 5.0 W C GM Average Gate Power (t = 8.3 msec, T= 80°C) P 0.1 W C G(AV) Operating Junction Temperature Range T -40 to +110 °C J Storage Temperature Range T -40 to +150 °C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 R 156 °C/W 8JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8" from case for 10 seconds. Electrical Characteristics - OFF (T = 25°C unless otherwise noted ; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 10 Peak Repetitive Blocking Current T = 25°C I , J DRM mA (V = V = V ; Gate Open) T = 110°C I D DRM RRM J RRM - - 200 Electrical Characteristics - ON (T = 25°C unless otherwise noted; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak On−State Voltage (Note 2) (I = ±1.1 A) V − − 1.9 V TM TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 Ω) I – – 10 mA D L GT I − − 5.0 mA Holding Current (V = 12 V, Gate Open, Initiating Current = ±20 mA)) H D Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 Ω) V – – 2.0 V D L GT 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18

Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Commutation Voltage (f = 250 Hz, I = 1.0 A, Commutating di/dt = 1.5 A/mS TM On−State Current Duration = 2.0 mS, V = 200 V, (dI/dt)c 1.5 − − A/ms DRM Gate Unenergized, T = 110°C, C Gate Source Resistance = 150 Ω, See Figure 10) Critical Rate of Rise of Off-State Voltage dV/dt 10 − − V/µs (V = 0.67 x V , Exponential Waveform, Gate Open, T = 110°C) D DRM J Voltage Current Characteristic of SCR Symbol Parameter +Current V Peak Repetitive Forward Off State Voltage Quadrant 1 DRM MainTerminal 2 + VTM I Peak Forward Blocking Current DRM on state IH V Peak Repetitive Reverse Off State Voltage IRRM at VRRM RRM I Peak Reverse Blocking Current off state +Voltage RRM IH IDRM at VDRM VTM Maximum On State Voltage QMuaaindrTaenrtm i3nal 2 VTM I Holding Current H Quadrant Definitions for a Triac Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 MT2 POSITIVE (Positive Half Cycle) 0.15 + 3.8 0.079 2.0 (+) MT2 (+) MT2 0.244 0.091 0.091 6.2 2.3 2.3 QuadrantII ( ) IGT (+) IGT QuadrantI 0.079 GATE GATE 2.0 inches MT1 MT1 0.059 0.059 0.059 mm 0.984 1.5 1.5 1.5 25.0 REF REF IGT +IGT ( ) MT2 ( ) MT2 0.096 0.096 0.096 QuadrantIII ( ) IGT (+) IGT QuadrantIV 2.44 2.44 2.44 GATE GATE 0.059 0.059 MT1 MT1 1.5 1.5 REF REF 0.472 12.0 MT2 NEGA TIVE BOARD MOUNTED VERTICALLY IN CINCH 8840E DGE CONNECTOR. (Negative Half Cycle) BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. All polarities are referenced to MT1. MATERIAL: G10 FIBERGLASS BASE EPOXY . With in phase signals (using standard AC lines) quadrants I and III are used © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18

Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Figure 3. Junction to Ambient Thermal Resistance vs. Figure 2. On-State Characteristics Copper Tab Area PS) 10 M A T ( N E R R U C 1.0 E AT T S N- O S U 0.1 O E AN TYPICAL AT TJ = 110°C NT MAX AT TJ = 110°C TA MAX AT TJ = 25°C S N0.01 I, IT 0 1.0 2.0 3.0 4.0 5.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 4. Current Derating, Minimum Pad Size Reference: Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature Ambient Temperature C) E ( ° R U110 T A ER100 α MP 30° α E90 60° TT 90° α = CONDUCTION N80 ANGLE E BI dc M70 EA α = 180° BL60 120° A W O50 LL MINIMUM FOOTPRINT M A40 50 OR 60 Hz U M30 XI A20 M 0 0.1 0.2 0.3 0.4 0.5 , A T IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 6. Current Derating, 2.0 cm Square Pad Reference: Figure 7. Current Derating Reference: MT2 Tab Ambient Temperature © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18

Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Figure 9. Thermal Response, Device Mounted on Figure 1 Figure 8. Power Dissipation Printed Circuit Board Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) Figure 11. Typical Commutating dv/dt versus Current Crossing Figure 12. Typical Commutating dv/dt versus Junction Rate and Junction Temperature Temperature at 0.8 Amps RMS 10 10 60 Hz 80° 60° 180 Hz 400 Hz dt dt OMMUTATING dv/µdv/dt , (V/ S)c ITM 110° 100° OMMUTATING dv/µdv/dt , (V/ S)c VDRM = 200V 300 Hz C tw C 1 f = 2 tw TM 1.0 VDRM (didt)c 1000 1.0 1.01 0 60 70 80 90 100 110 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (°C) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18

Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Figure 13. Exponential Static dv/dt versus Gate − Figure 14. Typical Gate Trigger Current Variation Main Terminal 1 Resistance 60 10 600 Vpk A) IGT3 TJ = 110°C T (m µdt (V/ s) 5400 MAINP OTSEIRTMIVIENAL #2 GER CURREN1.0 IGTI1GT2 IGT4 STATIC dv/ 30 , GATE TRIGT MAIN TERMINAL #1 G I POSITIVE 20 0.1 10 100 1000 10,000 0 40 60 80 RG TJ, JUNCTION TEMPERATURE (°C) Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation 6.0 1.1 S) HOLDING CURRENT (mA) 5432....0000 MAIMNA TIENPR OMTSEIINRTMAIVLIEN #A1L #2 TE TRIGGER VOLTAGE (VOLT VGT2 VGT1 VGT3 VGT4 ,I H1.0 POSITIVE V , GAGT 0 0.3 02 01 40 60 80 00 02 01 40 60 80 00 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18

Thyristors Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1 Dimensions Part Marking System 4 D b1 AYW CASE 318E AC08x 4 STYLE 11 HE E 12 3 1 2 3 A= Assembly Location b Y= Year e1 e W= Work Week AC08X =Device Code C x= B or M A 0.08 (0003) A1 (Note: Microdot may be in either location) L1 Inches Millimeters Soldering Footprint Dim Min Nom Max Min Nom Max A --- --- 0.071 --- --- 1.80 3.8 0.15 A1 0.001 0.003 0.005 0.02 0.07 0.13 b 0.026 0.030 0.033 0.66 0.75 0.84 2.0 0.079 b1 0.114 0.118 0.122 2.90 3.00 3.10 c 0.009 0.011 0.014 0.23 0.29 0.35 D 0.260 0.260 0.264 6.60 6.60 6.71 6.3 2.3 2.3 E 0.130 0.138 0.146 3.30 3.50 3.70 0.248 0.091 0.091 e --- 0.091 --- --- 2.30 --- e1 0.030 0.037 0.045 0.75 0.95 1.15 L1 0.059 0.069 0.079 1.50 1.75 2.00 2.0 0.079 HE 0.268 0.276 0.283 6.80 7.00 7.20 ø 0° --- 10° 0° --- 10° 1.5 mm 0.059 SCALE 6:1 inches 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Ordering Information Pin Assignment Device Package Type Shipping 1 Main Terminal 1 MAC08BT1 SOT−223 1000 / Tape & Reel 2 Main Terminal 2 SOT−223 MAC08BT1G 1000 / Tape & Reel (Pb−Free) 3 Gate MAC08MT1 SOT−223 1000 / Tape & Reel 4 Main Terminal 2 SOT−223 MAC08MT1G 1000 / Tape & Reel (Pb−Free) Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18