MA4SWx10B-1 Series HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 Features Functional Diagrams1  Broad Bandwidth Specified 2 - 18 GHz  Usable up to 26 GHz  Integrated Bias Network MA4SW210B-1 (SP2T)  Lower Insertion Loss / Higher Isolation  Fully Monolithic, Glass Encapsulated Chip  Up to +33 dBm CW Power Handling @ +25°C  RoHS* Compliant Description The MA4SW210B-1 (SP2T) and MA4SW310B-1 (SP3T) broadband switches with an integrated bias networks utilizing MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. MA4SW310B-1 (SP3T) The top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20 (gold/tin) solder or conductive silver epoxy. Ordering Information Part Number Package MA4SW210B-1 Gel Pack MA4SW310B-1 Gel Pack 1. Yellow areas indicate ribbon/wire bonding pads *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 111 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4SWx10B-1 Series HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 Electrical Specifications: T = 25°C, 20 mA A MA4SW210B-1 (SPDT) Parameter Test Conditions Units Min. Typ. Max. 2 GHz 1.5 1.8 6 GHz 0.7 1.0 Insertion Loss dB — 12 GHz 0.9 1.2 18 GHz 1.2 1.8 2 GHz 55 60 6 GHz 47 50 Isolation dB — 12 GHz 40 45 18 GHz 36 40 2 GHz 14 6 GHz 15 Input Return Loss dB — — 12 GHz 15 18 GHz 13 Switching Speed2 — ns — 50 — MA4SW310B-1 (SP3T) Parameter Test Conditions Units Min. Typ. Max. 2 GHz 1.6 2.0 6 GHz 0.8 1.1 Insertion Loss dB — 12 GHz 1.0 1.3 18 GHz 1.3 1.9 2 GHz 54 59 6 GHz 47 50 Isolation dB — 12 GHz 40 45 18 GHz 36 40 2 GHz 14 6 GHz 15 Input Return Loss dB — — 12 GHz 16 18 GHz 14 Switching Speed2 — ns — 50 — 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, I = C dv/dt, ratio of spike current to steady C state current, is typically 10:1. 222 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4SWx10B-1 Series HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 Absolute Maximum Ratings3,4,5 Cleanliness The chips should be handled in a clean environment Parameter Absolute Maximum free of dust and organic contamination. RF CW Incident Power +33 dBm Wire / Ribbon Bonding Reverse Voltage -50 V Thermo compression wedge bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is Bias Current per Port ±50 mA @ +25°C recommended. A work stage temperature of 150°C - 200°C, tool tip temperature of 120°C - 150° Operating Temperature -65°C to +125°C and a downward force of 18 to 22 grams should be Storage Temperature -65°C to +150°C used. If ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a Junction Temperature +175°C good bond. Excessive power or force will fracture the silicon beneath the bond pad causing it to lift. 3. Exceeding any one or combination of these limits may cause RF bond wires and ribbons should be kept as short permanent damage to this device. 4. MACOM does not recommend sustained operation near these as possible for optimum RF performance. survivability limits. 5. Maximum operating conditions for a combination of RF power, Chip Mounting DC bias and temperature: +33 dBm CW @ 15 mA (per diode) @ +85°C. HMIC switches have Ti-Pt-Au backside metallization and can be mounted using a gold-tin eutectic solder or conductive epoxy. Mounting surface must be free of contamination and flat. Eutectic Die Attachment Handling Procedures An 80/20, gold-tin, eutectic solder is recommended. Please observe the following precautions to avoid Adjust the work surface temperature to 255oC and damage: the tool tip temperature to 265oC. After placing the chip onto the circuit board re-flow the solder by Static Sensitivity applying hot forming gas (95/5 Ni/H) to the top These electronic devices are sensitive to surface of the chip. Temperature should be electrostatic discharge (ESD) and can be damaged approximately 290oC and not exceed 320oC for by static electricity. Proper ESD control techniques more than 20 seconds. Typically no more than three should be used when handling these Class 0 seconds is necessary for attachment. Solders rich in (HBM) and Class C1 (CDM).devices. tin should be avoided Epoxy Die Attachment A minimum amount of epoxy, 1 - 2 mils thick, should be used to attach chip. A thin epoxy fillet should be visible around the outer perimeter of the chip after placement. Epoxy cure time is typically 1 hour at 150°C. 333 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4SWx10B-1 Series HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 Typical RF Performance at T = +25°C, 20 mA Bias Current AMB ISOLATION vs FREQUENCY ISOLATION vs FREQUENCY MA4SW210B-1 MA4SW310B-1 0 0 B -10 B -10 d d N, -20 N, -20 O -30 O -30 TI TI A -40 A -40 L L O -50 O -50 IS -60 IS -60 -70 -70 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 10 12 14 16 18 20 22 24 26 FREQUENCY, GHz FREQUENCY, GHz INSERTION LOSS vs FREQUENCY INSERTION LOSS vs FREQUENCY MA4SW310B-1 MA4SW210-B1 2 B 2 dB 1 SS, d 0 SS, -10 N LO -2 N LO --32 O O -4 TI -4 RTI -5 R NSE -6 NSE --76 I -8 I -8 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 10 12 14 16 18 20 22 24 26 FREQUENCY, GHz FREQUENCY, GHz RETURN LOSS vs FREQUENCY RETURN LOSS vs FREQUENCY MA4SW210B-1 MA4SW310B-1 0 0 B -5 B -5 d d S, -10 S, -10 OS -15 OS -15 N L -20 N L -20 R -25 R -25 TU -30 TU -30 RE -35 RE -35 -40 -40 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 10 12 14 16 18 20 22 24 26 FREQUENCY, GHz FREQUENCY, GHz 444 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4SWx10B-1 Series HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 MA4SW210B-1 Series Diode Junction Temperature vs. Incident Power at 8 GHz 140 5 mA 120 100 10 mA C ) eg. Series Diode_5mA D on ( 80 Series Diode_10mA 20 mA cti Series Diode_20mA n u Tj 60 40 20 10.00 15.00 20.00 25.00 30.00 35.00 C.W. Incident Power ( dBm ) MA4SW210B-1 Compression Power vs. Incident Power at 8 GHz 0.80 5 mA 0.70 Series Diode_5mA Series Diode_10mA 0.60 Series Diode_20mA B ) d er ( 0.50 10 mA w o P n 0.40 o 20 mA si s e pr 0.30 m o C 0.20 0.10 0.00 10.00 15.00 20.00 25.00 30.00 35.00 C.W. Incident Power ( dBm ) 6. The MA4SW310B-1 contains the same PIN diodes and will have similar performance. 555 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4SWx10B-1 Series HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 Operation of MA4SWx10B-1 Series Operation of the MA4SWx10B-1 series PIN diode switches is achieved by simultaneous application of DC currents to the bias pads. The required levels for the different states are shown in the tables below. The control currents should be supplied by constant current sources. The nominal 40 - 60 Ω pull-up resistor voltage @ J4 and J5 is usually -1 V for -20 mA and +20 mA for +1 V. Driver / Bias Connections MA4SW210B-1 (SP2T) MA4SW310B-1 (SP3T) DC Control Current (mA) RF Output States DC Control Current (mA) RF Output States J4 J5 J1-J2 J1-J3 J5 J6 J7 J1-J2 J1-J3 J1-J4 -20 +20 low loss Isolation -20 +20 +20 low loss Isolation Isolation +20 -20 Isolation low loss +20 -20 +20 Isolation low loss Isolation +20 +20 -20 Isolation Isolation low loss J2 J3 RFOUT RFOUT J3 J6 J4 J5 RF BIAS BIASIN BIASIN OUT IN J1 RF IN MA4SW210B-1 (SP2T) J2 J4 RFOUT RFOUT J5 J7 BIASIN BIASIN J1 RF IN MA4SW310B-1 (SP3T) 666 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4SWx10B-1 Series HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 Chip Outline Drawings7,8 MA4SW210B-1 INCHES MM DIM MIN. MAX. MIN. MAX. A 0.066 0.070 1.680 1.780 B 0.048 0.052 1.230 1.330 C 0.004 0.006 0.100 0.150 D 0.004 0.006 0.090 0.140 E 0.012 0.013 0.292 0.317 F 0.029 0.030 0.735 0.760 G 0.030 0.031 0.766 0.791 H 0.029 0.030 0.732 0.757 J 0.005 REF. 0.129 REF. K 0.005 REF. 0.129 REF. MA4SW310B-1 INCHES MM DIM MIN. MAX. MIN. MAX. A 0.071 0.072 1.807 1.833 B 0.071 0.072 1.797 1.823 C 0.0045 0.0055 0.100 0.150 D 0.031 0.032 0.781 0.807 E 0.029 0.030 0.732 0.758 F 0.006 0.007 0.152 0.178 G 0.004 0.005 0.099 0.125 H 0.005 0.006 0.125 0.151 J 0.034 0.035 0.871 0.897 K 0.064 0.065 1.617 1.643 L 0.066 0.067 1.683 1.709 M 0.005 REF. 0.1250 REF. N 0.0046 REF. 0.1180 REF. 7. Topside and backside metallization is gold, 2.5 µm thick typical. 8. Yellow areas indicate ribbon/wire bonding pads 777 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support