MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 Features  Ultra Broad Bandwidth: 50 MHz to 50 GHz  Functional Bandwidth: 50 MHz to 70 GHz  0.7 dB Insertion Loss  32 dB Isolation @ 50 GHz  Low Current Consumption: -10mA for low loss state +10mA for Isolation state  MACOM’s unique AlGaAs hetero-junction anode technology  Silicon Nitride Passivation  Polymer Scratch Protection  RoHS Compliant* and 260°C Reflow Compatible Description The MA4AGSW4 is an Aluminum-Gallium-Arsenide, single pole, four throw (SP4T), PIN diode switch. Yellow areas indicate bond pads The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As J3 J4 much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride J2 J5 and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. J1 Applications The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch Ordering Information ideal for fast switching, high frequency, multi-throw switch designs. These AlGaAs PIN switches are use Part Number Package in switching arrays for radar systems, radiometers, test equipment and other multi-assembly MA4AGSW4 Waffle Pack components. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007073

MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 Electrical Specifications: T = +25°C, +/-10 mA Bias Current (on wafer measurements) A Parameter Test Conditions Units Min. Typ. Max. 0.05 - 18 GHz 0.7 0.8 Insertion Loss dB — 18 - 50 GHz 1.0 1.4 0.05 - 18 GHz 25 41 Isolation dB — 18 - 50 GHz 25 32 0.05 - 18 GHz 10 21 Input Return Loss dB — 18 - 50 GHz 10 22 0.05 - 18 GHz 10 26 Output Return Loss dB — 18 - 50 GHz 10 17 Switching Speed1 10 GHz ns — 20 — 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 - 560 pF and a resistor between 150 - 220 Ω to achieve 20 ns rise and fall times. Absolute Maximum Ratings2,3: T = +25°C A Parameter Absolute Maximum Breakdown Voltage 25 V Bias Current ±25 mA Incident C.W. RF Power +23 dBm C.W. @ 10 mA, +85°C Junction Temperature +175°C Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Assembly Temperature +300°C <10 seconds 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007073

MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 Typical RF Performance Curves: @ +25°C (Probed on Wafer) Insertion Loss Isolation 0.0 0 J3 & J4 J3 & J4 J2 & J5 J2 & J5 -0.5 -20 B)-1.0 B)-40 d d ( ( -1.5 -60 -2.0 -80 0 10 20 30 40 50 0 10 20 30 40 50 Frequency (GHz) Frequency (GHz) Input Return Loss Output Return Loss 0 0 J3 & J4 J3 & J4 J2 & J5 J2 & J5 -10 -10 B)-20 B)-20 d d ( ( -30 -30 -40 -40 0 10 20 30 40 50 0 10 20 30 40 50 Frequency (GHz) Frequency (GHz) 333 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007073

MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 Operation of the MA4AGSW4 Switch The simultaneous application of a negative DC current to the low loss port and positive DC current to the remaining isolated switching ports is required for the operation of the MA4AGSW4, AlGaAs, PIN switch. The backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port J1. The forward bias voltage at J2, J3, J4 & J5 will not exceed ±1.6 volts and is typically ±1.4 volts with supply current of ±30 mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. While for the isolated port, the shunt diode is forward biased and the series diode is reverse biased. The bias network design shown below should yield >30 dB RF to DC isolation. Available for use in conjunction with MACOM’s line of AlGaAs switches are two, fully integrated, broadband, monolithic, bias networks which may be used as an alternative to the suggested individual component bias network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information. The lowest insertion loss, P1dB, IP3, and switching speed is achieved by using a voltage pull-up resistor in the DC return path, (J1). A minimum value of | -2 V | is recommended at this return node, which is achievable with a standard, ±5 V TTL Controlled PIN Diode Driver. MA4AGSW4 Schematic with a Typical External 2 - 18 GHz Bias Network Typical Driver Connections Control Levels (DC Current) Condition of RF Output J2 J3 J4 J5 J2-J1 J3-J1 J4-J1 J5-J1 -10 mA +10 mA +10 mA +10 mA Low Loss Isolation Isolation Isolation +10 mA -10 mA +10 mA +10 mA Isolation Low Loss Isolation Isolation +10 mA +10 mA -10 mA +10 mA Isolation Isolation Low Loss Isolation +10 mA +10 mA +10 mA -10 mA Isolation Isolation Isolation Low Loss 444 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007073

MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 Chip Dimensions and Bonding Pad Locations (In Yellow) Chip Dimensions mils mm Dimension Minimum Nominal Maximum Minimum Nominal Maximum A 66.0 67.0 68.0 1.676 1.702 1.727 B 28.5 29.0 29.5 0.724 0.737 0.749 C 50 60 61 1.270 1.524 1.549 D 19.5 20.0 20.5 0.495 0.508 0.521 E 29.5 30.0 30.5 0.749 0.762 0.775 F 8.5 9.0 9.5 0.216 0.229 0.241 G 39.5 40.0 40.5 1.003 1.016 1.029 H 3.5 4.0 4.5 0.089 0.102 0.114 PADS 3.5 4.0 4.5 0.089 0.102 0.114 555 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007073

MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 Assembly Instructions Assembly Techniques The MA4AGSW4, AlGaAs device is designed to be Cleanliness mounted with electrically conductive silver epoxy or with a low temperature solder perform, which does These chips should be handled in a clean not have a rich tin content. environment. Solder DIE Attach Static Sensitivity Only solders which do not scavenge gold, such as These Devices are considered ESD Class 1A, HBM. 80/20, Au/Sn or Indalloy #2 is recommended. Do not Proper ESD techniques should be used when expose die to temperatures >300°C for more than 10 handling these devices. seconds. Handling Procedures Electrical Conductive Epoxy DIE Attach The protective polymer coating on the active areas Use a controlled thickness of approximately 2 mils of the die provides scratch and impact protection, for best electrical conductivity and lowest thermal particularly for the metal air bridge, which contacts resistance. Cure epoxy per manufacturer’s the diode’s anode. Die should primarily be handled schedule. Typically 150°C for 1 hour. with vacuum pickup tools, or alternatively with plastic tweezers. Ribbon / Wire Bonding Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the lowest inductance and best microwave performance. For more detailed handling and assembly instructions, see Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices”. 666 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007073

MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 MACOM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 777 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007073