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  • 型号: MA4AGSW1
  • 制造商: M/A-COM
  • 库位|库存: xxxx|xxxx
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MA4AGSW1产品简介:

ICGOO电子元器件商城为您提供MA4AGSW1由M/A-COM设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MA4AGSW1价格参考。M/A-COMMA4AGSW1封装/规格:RF 开关, 射频开关 IC 通用 SPST 50GHz 模具。您可以下载MA4AGSW1参考资料、Datasheet数据手册功能说明书,资料中有MA4AGSW1 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

SPST REFLECTIVE ALGAAS SWITCHRF 开关 IC .05-50GHz SPST AlGaAs IL .3dB

产品分类

RF 开关

IIP3

-

品牌

MACOMM/A-Com Technology Solutions

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

RF集成电路,RF 开关 IC,MACOM MA4AGSW1-

数据手册

点击此处下载产品Datasheet

P1dB

-

产品型号

MA4AGSW1MA4AGSW1

RF类型

通用

产品种类

RF 开关 IC

介入损耗

0.3 dB

供应商器件封装

模具

关闭隔离—典型值

46 dB

其它名称

1465-1018

包装

托盘 - 晶粒

商标

MACOM

封装/外壳

模具

封装/箱体

Die

工作温度

-55°C ~ 125°C

工厂包装数量

25

开关数量

Single

开关配置

SPST

拓扑

反射

插损@频率

0.3dB @ 50GHz

最大工作温度

+ 125 C

最小工作温度

- 55 C

标准包装

25

特性

-

电压-电源

-

电源电流

10 mA

电路

SPST

阻抗

-

隔离@频率

46dB @ 50GHz (标准)

频率

50 MHz to 70 GHz

频率 -上

50GHz

频率 -下

50MHz

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PDF Datasheet 数据手册内容提取

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Rev. V6 Features  Ultra Broad Bandwidth: 50 MHz to 50 GHz  Functional Bandwidth: 50 MHz to 70 GHz  0.3 dB Insertion Loss  46 dB Isolation @ 50 GHz  Low Current consumption -5 V for Low Loss State +10 mA for Isolation State  Unique AlGaAs Hetero-Junction Anode Technology  Silicon Nitride Passivation  Polymer Scratch Protection  RoHS Compliant* & 260°C Reflow Compatible Description Yellow areas indicate bond pads The MA4AGSW1 is an aluminum-gallium-arsenide, single pole, single throw (SPST), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using a patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be J1 J2 realized at 50 GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. Applications The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch ideal for fast switching, high frequency, multi-throw Ordering Information switch designs. These AlGaAs PIN switches are use in switching arrays for radar systems, radiometers, Part Number Package test equipment and other multi-assembly components. MA4AGSW1 Waffle Pack * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007069

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Rev. V6 Electrical Specifications: T = +25°C (on wafer measurements) A Parameter Test Conditions Units Min. Typ. Max. -5 V, 0.05 - 18 GHz 0.2 0.3 Insertion Loss dB — -5 V, 18 - 50 GHz 0.3 0.6 10 mA, 0.05 - 18 GHz 20 22 Isolation dB — 10 mA, 18 - 50 GHz 40 46 -5 V, 0.05 - 18 GHz 30 Input & Output Return Loss dB — — -5 V, 18 - 50 GHz 16 Switching Speed 10% -90% RF Voltage, 10 GHz ns — 10 — 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ω to achieve 10 ns rise and fall times. Absolute Maximum Ratings @ T = +25°C A Parameter Maximum Rating Incident CW RF Power2 +23 dBm CW Breakdown Voltage 25 V Bias Current ±25 mA Junction Temperature +150°C Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C 2. Maximum combined operating conditions for RF Power, DC bias, and temperature: +23 dBm CW @ 10 mA (per diode) @ +85°C. 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007069

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Rev. V6 Typical RF Performance (Probed on Wafer) Insertion Loss @ -5 V Isolation @ +10 mA (J2) 0.0 0 -10 -0.1 -20 -0.2 B) B) -30 d d ( ( -0.3 -40 -0.4 -50 -0.5 -60 0 10 20 30 40 50 0 10 20 30 40 50 Frequency (GHz) Frequency (GHz) Input Return Loss @ -5 V Output Return Loss @ -5 V 0 0 -10 -10 -20 -20 B) B) d d ( ( -30 -30 -40 -40 -50 -50 0 10 20 30 40 50 0 10 20 30 40 50 Frequency (GHz) Frequency (GHz) 333 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007069

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Rev. V6 Operation of the MA4AGSW1 Switch The application of 0 V or a negative DC voltage to either J1 or J2 provides insertion loss for the MA4AGSW1 SPST reflective switch. Isolation is achieved with 10 mA total DC current. The forward bias voltage at the diode bias node is typically 1.4 V for supply currents up to 30 mA and will not exceed 1.6 V. The backside area of the die is the RF and DC return ground plane. The bias network design should yield >30 dB RF to DC isolation. Available for use in conjunction with MACOMs line of AlGaAs switches are two, fully integrated, broadband, monolithic, bias networks which may be used as an alternative to the suggested individual component bias network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information. The lowest insertion loss, P1dB, IP3, and switching speed is achieved by applying a minimum value of | -2 V | at DC bias node, which is achievable with a standard, ±5 V TTL controlled PIN diode driver. Schematic with 2 - 18 GHz Bias Network Chip & Bonding Pad Locations (In Yellow) Note: The bias network can be connected to either J1 or J2 Typical Driver Connections Dimensions Mils Millimeters Control Level (DC Current) RF Output State DIM Min. Max. Min. Max. J1 or J2 J1-J2 A 23.5 25.5 0.597 0.648 -5 V Low Loss B 11.75 12.75 0.299 0.324 +10 mA Isolation C 28.50 30.50 0.724 0.775 D 20.50 21.00 0.521 0.533 E 3.50 4.50 0.089 0.114 Pads X-Y 3.50 4.50 0.089 0.114 444 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007069

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Rev. V6 Assembly Instructions Assembly Technique The MA4AGSW1, AlGaAs switch is designed to be Cleanliness mounted with electrically conductive silver epoxy or with a lower temperature solder perform, which does These chips should be handled in a clean not have a rich tin content. environment. Solder Die Attach Static Sensitivity All die attach and bonding methods should be These Devices are considered ESD Class 0 HBM. compatible with gold metal. Solder which does not Proper ESD techniques should be used when scavenge gold, such as 80/20, Au/Sn or Indalloy #2 handling these devices. is recommended. Do not expose die to temperatures greater than 300°C for more than 10 seconds. General Handling The protective polymer coating on the active areas Electrical Conductive Epoxy Die Attach of the die provides scratch and impact protection, Use a controlled thickness of approximately 2 mils particularly for the metal air bridge, which contacts for best electrical conductivity and lowest thermal the diode’s anode. Die should primarily be handled resistance. Cure epoxy per manufacturer’s with vacuum pickups, or alternatively with plastic schedule. Typically 150°C for 1 hour. tweezers. Ribbon / Wire Bonding Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the lowest inductance and best microwave performance. For more detailed handling and assembly instructions, see Application Note M541. 555 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007069

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Rev. V6 MACOM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 666 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007069