M74HCT367 HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING n HIGH SPEED: t = 14ns (TYP.) at V = 4.5V PD CC n LOW POWER DISSIPATION: I = 4m A(MAX.) at T =25°C CC A ) n COMPATIBLE WITH TTL OUTPUTS : s V = 2V (MIN.) V = 0.8V (MAX) ( IH IL t c n SYMMETRICAL OUTPUT IMPEDANCE: DIP SOP TSSOP u |I | = I = 6mA (MIN) OH OL d n BALANCED PROPAGATION DELAYS: o tPLH @ tPHL ORDER CODES P r n PIN AND FUNCTION COMPATIBLE WITH PACKAGE e TUBE T & R 74 SERIES 367 DIP e tM74HCT367B1R DESCRIPTION SOoPl M74HCT367M1R M74HCT367RM13TR The M74HCT367 is an high speed CMOS HEX TsSSOP M74HCT367TTR b BUS BUFFER 3-STATE OUTPUTS fabricated O with silicon gate C2MOS technology. and when held high, these outputs are disabled in This device contains six buffers, four buffers -are a high-impedance state. controlled by an enable input (G1) and tshe) other All inputs are equipped with protection circuits two buffers are controlled by the ot(her enable against static discharge and transient excess t input (G2); the outputs of each bucffer group are voltage. enabled when G1 and/or G2 inpuuts are held low, d o r P e t e l o s PbIN CONNECTION AND IEC LOGIC SYMBOLS O September 2001 1/9

M74HCT367 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 15 G1, G2 3 State Output Enable Input 2, 4, 6, 10, 1A to 6A Data Inputs 12, 14 3, 5, 7, 9, 11, 1Y to 6Y Data Outputs 13 8 GND Ground (0V) 16 V Positive Supply Voltage CC ) TRUTH TABLE s ( t c INPUTS OUTPUTS u d G An Yn o L rL L P L H H e H X Z t X: Don’t Caree Z: High Imlpedance o s ABSOLUTE MAXIMUM RATINGS b O Symbol Parameter Value Unit - VCC Supply Voltage ) -0.5 to +7 V s VI DC Input Voltage ( -0.5 to VCC + 0.5 V t VO DC Output Voltage c -0.5 to VCC + 0.5 V u IIK DC Input Diode Curdrent – 20 mA IOK DC Output Diodoe Current – 20 mA r IO DC OutputP Current – 35 mA ICC or IGND DC VeC C or Ground Current – 70 mA t PD ePower Dissipation 500(*) mW l Tstgo Storage Temperature -65 to +150 °C s b TL Lead Temperature (10 sec) 300 °C O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 (cid:176) C; derate to 300mW by 10mW/(cid:176) C from 65(cid:176) C to 85(cid:176) C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage 4.5 to 5.5 V VI Input Voltage 0 to VCC V VO Output Voltage 0 to VCC V Top Operating Temperature -55 to 125 °C tr, tf Input Rise and Fall Time (VCC = 4.5 to 5.5V) 0 to 500 ns 2/9

M74HCT367 DC SPECIFICATIONS Test Condition Value Symbol Parameter V TA = 25°C -40 to 85°C -55 to 125°C Unit CC (V) Min. Typ. Max. Min. Max. Min. Max. V High Level Input 4.5 IH Voltage to 2.0 2.0 2.0 V 5.5 V Low Level Input 4.5 IL Voltage to 0.8 0.8 0.8 V 5.5 VOH High Level Output IO=-20 m A 4.4 4.5 4.4 4.4 s ) Voltage 4.5 ( V IO=-6.0 mA 4.18 4.31 4.13 4.10t c VOL Low Level Output IO=20 m A 0.0 0.1 0.1 u 0.1 Voltage 4.5 d V IO=6.0 mA 0.17 0.26 o0.33 0.40 II ICnupruret nLteakage 5.5 VI = VCC or GND – 0.1 P r – 1 – 1 m A IOZ High Impedance V = V or V e Output Leakage 5.5 I IH IL t– 0.5 – 5 – 10 m A Current VO = VCC or GND e l o I Quiescent Supply CC Current 5.5 VI = VCC or GND s 4 40 80 m A b D ICC Additional Worst 5.5 Per Input pin O 2.0 2.9 3.0 mA Case Supply V = 0.5V or I Current V = 2.4-V I Other )Inputs at s ( VCC or GND t c I = 0 O u d AC ELECTRICAL CHARAo CTERISTICS (C = 50 pF, Input t = t = 6ns) L r f r P Test Condition Value e Symbol e tParameter VCC CL TA = 25°C -40 to 85°C -55 to 125°C Unit l (V) (pF) o Min. Typ. Max. Min. Max. Min. Max. s t t Output Transition bTLH THL 4.5 50 7 12 15 18 ns Time O t t Propagation Delay 4.5 50 14 22 28 33 PLH PHL Time 4.5 150 18 28 35 42 ns tPZL tPZH High Impedance 4.5 50 RL = 1 KW 16 25 31 38 Output Enable ns Time 4.5 150 RL = 1 KW 20 31 39 47 t t High Impedance PLZ PHZ Output Disable 4.5 50 R = 1 KW 18 25 31 38 ns L Time 3/9

M74HCT367 CAPACITIVE CHARACTERISTICS Test Condition Value Symbol Parameter V TA = 25°C -40 to 85°C -55 to 125°C Unit CC (V) Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 5 10 10 10 pF C Power Dissipation PD Capacitance (note 47 pF 1) 1) C is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without PD load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I = C x V x f + I /6 (per CC(opr) PD CC IN CC Channel) ) s ( TEST CIRCUIT t c u d o r P e t e l o s b O - ) s ( t c u d TEST SWITCH o tPLH, tPHL P r Open tPZL, tPLZ VCC e tPZH, tPHZ t GND e RCL == 510KpWoF lo/1r5 e0qpuFiv oarl eenqtuivalent (includes jig and probe capacitance) 1 RT =s ZOUT of pulse generator (typically 50W ) b O 4/9

M74HCT367 WAVEFORM 1 : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) ) s ( t c u d o r P e t e l o s b O - ) s WAVEFORM 2 : OUTPUT ENABLE A(ND DISABLE TIMES (f=1MHz; 50% duty cycle) t c u d o r P e t e l o s b O 5/9

M74HCT367 Plastic DIP-16 (0.25) MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. a1 0.51 0.020 B 0.77 1.65 0.030 0.065 b 0.5 0.020 ) s b1 0.25 0.010 ( t c D 20 u 0.787 d E 8.5 o0.335 r P e 2.54 0.100 e e3 17.78 t 0.700 e l F 7.1 o 0.280 s I 5.1b 0.201 O L 3.3 0.130 - ) Z s 1.27 0.050 ( t c u d o r P e t e l o s b O P001C 6/9

M74HCT367 SO-16 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 ) b1 0.19 0.25 0.007 0s.010 ( C 0.5 0.019 t c c1 45° (typ.) u d D 9.8 10 0.385 o 0.393 r E 5.8 6.2 0.228 P 0.244 e 1.27 e 0.050 t e3 8.89 e 0.350 l F 3.8 4.0 o 0.149 0.157 s G 4.6 5.3 b 0.181 0.208 O L 0.5 1.27 0.019 0.050 - M 0.62 0.024 ) S s 8° (max.) ( t c u d o r P e t e l o s b O PO13H 7/9

M74HCT367 TSSOP16 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 1.2 0.047 A1 0.05 0.15 0.002 0.004 0.006 A2 0.8 1 1.05 0.031 0.039 0.0)41 s ( b 0.19 0.30 0.007 t 0.012 c u c 0.09 0.20 0.004 d 0.0089 o r D 4.9 5 5.1 0.193 P 0.197 0.201 e E 6.2 6.4 6.6 0.244 0.252 0.260 t e E1 4.3 4.4 4.48 ol0.169 0.173 0.176 s e 0.65 BSC b 0.0256 BSC O K 0° 8° 0° 8° - ) L 0.45 0.60 s 0.75 0.018 0.024 0.030 ( t c u d o r P A e A2 t e K L ol A1 b e c E s b O D E1 PIN 1 IDENTIFICATION 1 0080338D 8/9

M74HCT367 ) s ( t c u d o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 9/9