M74HC367 HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING n HIGH SPEED: t = 9ns (TYP.) at V = 6V PD CC n LOW POWER DISSIPATION: I = 4m A(MAX.) at T =25°C CC A n HIGH NOISE IMMUNITY: V = V = 28 % V (MIN.) NIH NIL CC n SYMMETRICAL OUTPUT IMPEDANCE: DIP SOP TSSOP |I | = I = 6mA (MIN) OH OL n BALANCED PROPAGATION DELAYS: tPLH @ tPHL ORDER CODES n WIDE OPERATING VOLTAGE RANGE: PACKAGE TUBE T & R V (OPR) = 2V to 6V CC DIP M74HC367B1R n PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 367 SOP M74HC367M1R M74HC367RM13TR TSSOP M74HC367TTR DESCRIPTION The M74HC367 is an high speed CMOS HEX enabled when G1 and/or G2 inputs are held low, BUS BUFFER 3-STATE OUTPUTS fabricated and when held high, these outputs are disabled in with silicon gate C2MOS technology. a high-impedance state. This device contains six buffers, four buffers are All inputs are equipped with protection circuits controlled by an enable input (G1) and the other against static discharge and transient excess two buffers are controlled by the other enable voltage. input (G2); the outputs of each buffer group are PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/10

M74HC367 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 15 G1, G2 3 State Output Enable Input 2, 4, 6, 10, 1A to 6A Data Inputs 12, 14 3, 5, 7, 9, 11, 1Y to 6Y Data Outputs 13 8 GND Ground (0V) 16 V Positive Supply Voltage CC TRUTH TABLE INPUTS OUTPUTS G An Yn L L L L H H H X Z X: Don’t Care Z: High Impedance ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to VCC + 0.5 V VO DC Output Voltage -0.5 to VCC + 0.5 V IIK DC Input Diode Current – 20 mA IOK DC Output Diode Current – 20 mA IO DC Output Current – 35 mA ICC or IGND DC VCC or Ground Current – 70 mA PD Power Dissipation 500(*) mW Tstg Storage Temperature -65 to +150 °C TL Lead Temperature (10 sec) 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 (cid:176) C; derate to 300mW by 10mW/(cid:176) C from 65(cid:176) C to 85(cid:176) C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage 2 to 6 V VI Input Voltage 0 to VCC V VO Output Voltage 0 to VCC V Top Operating Temperature -55 to 125 °C Input Rise and Fall Time VCC = 2.0V 0 to 1000 ns tr, tf VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns 2/10

M74HC367 DC SPECIFICATIONS Test Condition Value Symbol Parameter V TA = 25°C -40 to 85°C -55 to 125°C Unit CC (V) Min. Typ. Max. Min. Max. Min. Max. V High Level Input 2.0 1.5 1.5 1.5 IH Voltage 4.5 3.15 3.15 3.15 V 6.0 4.2 4.2 4.2 V Low Level Input 2.0 0.5 0.5 0.5 IL Voltage 4.5 1.35 1.35 1.35 V 6.0 1.8 1.8 1.8 VOH High Level Output 2.0 IO=-20 m A 1.9 2.0 1.9 1.9 Voltage 4.5 IO=-20 m A 4.4 4.5 4.4 4.4 6.0 IO=-20 m A 5.9 6.0 5.9 5.9 V 4.5 IO=-6.0 mA 4.18 4.31 4.13 4.10 6.0 IO=-7.8 mA 5.68 5.8 5.63 5.60 VOL Low Level Output 2.0 IO=20 m A 0.0 0.1 0.1 0.1 Voltage 4.5 IO=20 m A 0.0 0.1 0.1 0.1 6.0 IO=20 m A 0.0 0.1 0.1 0.1 V 4.5 IO=6.0 mA 0.17 0.26 0.33 0.40 6.0 IO=7.8 mA 0.18 0.26 0.33 0.40 I Input Leakage I Current 6.0 VI = VCC or GND – 0.1 – 1 – 1 m A I High Impedance OZ V = V or V Output Leakage 6.0 I IH IL – 0.5 – 5 – 10 m A V = V or GND Current O CC I Quiescent Supply CC Current 6.0 VI = VCC or GND 4 40 80 m A 3/10

M74HC367 AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6ns) L r f Test Condition Value Symbol Parameter V C TA = 25°C -40 to 85°C -55 to 125°C Unit CC L (V) (pF) Min. Typ. Max. Min. Max. Min. Max. t t Output Transition 2.0 25 60 75 90 TLH THL Time 4.5 50 7 12 15 18 ns 6.0 6 10 13 15 t t Propagation Delay 2.0 30 85 105 130 PLH PHL Time 4.5 50 10 17 21 26 ns 6.0 9 14 18 22 2.0 42 105 130 160 4.5 150 14 21 26 32 ns 6.0 12 18 22 27 t t High Impedance 2.0 36 90 115 135 PZL PZH Output Enable 4.5 50 R = 1 KW 11 18 23 27 ns L Time 6.0 9 15 20 23 2.0 49 110 140 165 4.5 150 R = 1 KW 15 22 28 33 ns L 6.0 13 19 24 28 t t High Impedance 2.0 32 95 120 145 PLZ PHZ Output Disable 4.5 50 R = 1 KW 14 19 24 29 ns L Time 6.0 12 16 20 25 CAPACITIVE CHARACTERISTICS Test Condition Value Symbol Parameter V TA = 25°C -40 to 85°C -55 to 125°C Unit CC (V) Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 5 10 10 10 pF C Power Dissipation PD Capacitance (note 33 pF 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I = C x V x f + I /6 (per CC(opr) PD CC IN CC Channel) 4/10

M74HC367 TEST CIRCUIT TEST SWITCH tPLH, tPHL Open t , t V PZL PLZ CC t , t GND PZH PHZ C = 50pF/150pF or equivalent (includes jig and probe capacitance) L R = 1KW or equivalent 1 R = Z of pulse generator (typically 50W ) T OUT WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 5/10

M74HC367 WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle) 6/10

M74HC367 Plastic DIP-16 (0.25) MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. a1 0.51 0.020 B 0.77 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 0.050 P001C 7/10

M74HC367 SO-16 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 9.8 10 0.385 0.393 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 8.89 0.350 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.62 0.024 S 8° (max.) PO13H 8/10

M74HC367 TSSOP16 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 1.2 0.047 A1 0.05 0.15 0.002 0.004 0.006 A2 0.8 1 1.05 0.031 0.039 0.041 b 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0089 D 4.9 5 5.1 0.193 0.197 0.201 E 6.2 6.4 6.6 0.244 0.252 0.260 E1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 BSC 0.0256 BSC K 0° 8° 0° 8° L 0.45 0.60 0.75 0.018 0.024 0.030 A A2 K L A1 b e c E D E1 PIN 1 IDENTIFICATION 1 0080338D 9/10

M74HC367 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 10/10