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LTR-516AD产品简介:
ICGOO电子元器件商城为您提供LTR-516AD由Lite-On设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供LTR-516AD价格参考以及Lite-OnLTR-516AD封装/规格参数等产品信息。 你可以下载LTR-516AD参考资料、Datasheet数据手册功能说明书, 资料中有LTR-516AD详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | PHOTODIODE IR DARK光电二极管 Phototrans Filtered |
产品分类 | |
品牌 | Lite-On |
产品手册 | http://optoelectronics.liteon.com/en-us/product/detail.aspx?txtSpecNo=DS-50-93-0021&txtPartNo=LTR-516AD |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 光电二极管,Lite-On LTR-516AD- |
数据手册 | |
产品型号 | LTR-516AD |
上升时间 | 50 ns |
下降时间 | 50 ns |
不同nm时的响应度 | - |
二极管类型 | - |
产品 | Photodiodes |
产品目录绘图 | |
产品目录页面 | |
产品种类 | 光电二极管 |
光电流 | 100 uA |
其它名称 | 160-1032 |
功率耗散 | 150 mW |
反向电压 | 30 V |
响应时间 | - |
商标 | Lite-On |
安装风格 | Through Hole |
封装 | Bulk |
封装/外壳 | 6.6mm x 5mm |
封装/箱体 | Side Looker |
峰值波长 | 900 nm |
工作温度 | -40°C ~ 85°C |
工厂包装数量 | 1000 |
暗电流 | 30 nA |
最大工作温度 | + 85 C |
最大暗电流 | 30 nA |
最小工作温度 | - 40 C |
有效面积 | - |
标准包装 | 1,000 |
波长 | 940nm |
电压-DC反向(Vr)(最大值) | 30V |
电流-暗(典型值) | 30nA |
视角 | - |
频谱范围 | 770nm ~ 1000nm |
颜色-增强 | - |
IR Emitter and Detector Product Data Sheet LTR-516AD Spec No.: DS-50-93-0021 Effective Date: 06/10/2010 Revision: B LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 http://www.liteon.com/opto BBNNSS--OODD--FFCC000011//AA44 BNS-OD-FC001/A4
LITE-ON TECHNOLOGY CORPORATION. Property of Lite-On Only FEATURES * HIGH PHOTO SENSITIVITY * SUITABLE FOR INFRARED RADIATION * LOW JUNCTION CAPACITANCE * HIGH CUT-OFF FREQUENCY * FAST SWITCHING TIME * THE LTR-516AD IS A SPECIAL DARK GREEN PLASTIC PACKAGE THAT CUT THE VISIBLE LIGHT AND SUITABLE FOR THE DETECTORS OF INFRARED APPLICATIONS PACKAGE DIMENSIONS NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25mm(.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm(.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Part No. : LTR-516AD DATA SHEET Page : 1 of 4 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION. Property of Lite-On Only ABSOLUTE MAXIMUM RATINGS AT TA=25℃ PARAMETER MAXIMUM RATING UNIT Power Dissipation 150 mW Reverse Voltage 30 V Operating Temperature Range -40℃ to + 85℃ Storage Temperature Range -55℃ to + 100℃ Lead Soldering Temperature 260℃ for 5 Seconds [1.6mm(.063") From Body] ELECTRICAL OPTICAL CHARACTERISTICS AT TA=25℃ PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION IR = 100μA Reverse Break Down Voltage V(BR)R 30 V Ee = 0mW/c㎡ VR = 10V Reverse Dark Current Voltage ID(R) 30 nA Ee = 0mW/c㎡ λ = 940nm Open Circuit Voltage VOC 350 mV Ee = 0.5mW/c㎡ Rise Time Tr 50 nsec VR = 10V λ = 940nm Fall Time Tf 50 nsec RL = 1KΩ VR = 5V Short Circuit Current IS 1.7 2 μA λ = 940nm Ee = 0.1mW/c㎡ VR = 3V Total Capacitance CT 25 P f = 1MHZ Ee = 0mW/c㎡ Wavelength of the Max Sensitivity λSMAX 900 nm Part No. : LTR-516AD DATA SHEET Page : 2 of 4 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION. Property of Lite-On Only TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES (25℃ Ambient Temperature Unless Otherwise Noted) pA pF 4000 100 80 3000 nt ID e Ct 60 Curre 2000 citanc ark apa 40 D C 1000 20 0 0 0 5 10 15 20V 10-2 10-1 100 101 102 V Reverse Voltage VR Reverse Voltage VR Fig.1 DARK CURRENT VS. Fig.2 CAPACITANCE VS. REVERSE VOLTAGE REVERSE VOLTAGE TA=25° C, Ee=0 mW/cm2 F=1MHZ; Ee=0mW/cm2 nA 1.4 103 1.2 102 1.0 Is amb oIs 25 0.8 ent ID urrent 0.6 k Curr 101 otoc Dar Ph 0.4 100 0.2 0 10-1 -20 0 20 40 60 80 oC 0 20 40 60 80 100 oC Ambient Temperature Ambient Temperature Fig.3 PHOTOCURRENT VS. Fig.4 DARK CURRENT AMBIENT TEMPERATURE AMBIENT TEMPERATURE VR=10, Ee=0mW/cm2 Part No. : LTR-516AD DATA SHEET Page : 3 of 4 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION. Property of Lite-On Only TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES (25℃ Ambient Temperature Unless Otherwise Noted) % uA 100 103 80 y vit 102 siti al Sen 60 ent Ip ctr urr 101 e c p o e S 40 hot v P ati Rel 100 20 0 10-1 700 800 900 1000 1100 10-2 10-1 100 101 mW CM2 Wavelength Irradiance Ee Fig.5 RELATIVE SPECTRAL SENSITIVITY Fig.6 PHOTOCURRENT VS VS WAVELENGTH IRRADIANCE = 940 nm 0o 10o 20o 175 W m sitivity 30o pation 125 Relative Sen 1000....0987 645000ooo otal Power Dissi 75 T 0.6 80o 25 100o 0 0.5 0.3 0 0.2 0.4 -40 -20 0 20 40 60 80 100 oC Ambient Temperature Fig.7 SENSITIVITY DIAGRAM Fig.8 TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE Part No. : LTR-516AD DATA SHEET Page : 4 of 4 BNS-OD-C131/A4