ICGOO在线商城 > 传感器,变送器 > 光学传感器 - 光电晶体管 > LTR-301
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LTR-301产品简介:
ICGOO电子元器件商城为您提供LTR-301由Lite-On设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 LTR-301价格参考¥0.75-¥3.61。Lite-OnLTR-301封装/规格:光学传感器 - 光电晶体管, Phototransistor 940nm Side View Radial。您可以下载LTR-301参考资料、Datasheet数据手册功能说明书,资料中有LTR-301 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | PHOTOTRAN NPN IR CLEAR SIDE LOOK光电晶体管 Phototrans Clear |
产品分类 | |
品牌 | Lite-On Inc |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 光电晶体管,Lite-On LTR-301* |
数据手册 | |
产品型号 | LTR-301 |
上升时间 | 10 us |
下降时间 | 15 us |
产品 | Phototransistors |
产品目录绘图 | |
产品目录页面 | |
产品种类 | 光电晶体管 |
其它名称 | 160-1065 |
功率-最大值 | 100mW |
商标 | Lite-On |
安装类型 | 通孔 |
封装 | Bulk |
封装/外壳 | 径向 |
封装/箱体 | Side Looker |
工厂包装数量 | 1000 |
最大功率耗散 | 100 mW |
最大工作温度 | + 85 C |
最大暗电流 | 100 nA |
最小工作温度 | - 40 C |
朝向 | 侧视图 |
标准包装 | 1,000 |
波长 | 940nm |
电压-集射极击穿(最大值) | 30V |
电流-暗(Id)(最大值) | 100nA |
电流-集电极(Ic)(最大值) | 2.4mA |
类型 | Chip |
视角 | 70° |
集电极—发射极最大电压VCEO | 30 V |
集电极—射极击穿电压 | 30 V |
集电极—射极饱和电压 | 0.4 V |
IR Emitter and Detector Product Data Sheet LTR-301 Spec No.: DS-50-93-0013 Effective Date: 02/19/2004 Revision: D LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 http://www.liteon.com/opto BBNNSS--OODD--FFCC000011//AA44 BNS-OD-FC001/A4
LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES * WIDE RANGE OF COLLECTOR CURRENT * LENSED FOR HIGH SENSITIVITY * LOW COST PLASTIC SIDE LOOKING PACKAGE * CLEAR TRANSPARENT COLOR PACKAGE PACKAGE DIMENSIONS NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25mm(.010") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. Part No. : LTR-301 DATA SHEET Page : 1 of 3 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only ABSOLUTE MAXIMUM RATINGS AT TA=25℃ PARAMETER MAXIMUM RATING UNIT Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Operating Temperature Range -40℃ to + 85℃ Storage Temperature Range -55℃ to + 100℃ Lead Soldering Temperature 260℃ for 5 Seconds [1.6mm(.063") From Body] ELECTRICAL OPTICAL CHARACTERISTICS AT TA=25℃ TEST BIN PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITION NO. Collector-Emitter Breakdown I = 1mA C V 30 V Voltage (BR)CEO Ee = 0mW/c㎡ Emitter-Collector Breakdown I = 100μA E V 5 V Voltage (BR)ECO Ee = 0mW/c㎡ Collector Emitter Saturation I = 0.1mA C V 0.4 V Voltage CE(SAT) Ee = 1mW/c㎡ Rise Time Tr 10 μs VCC = 5V I = 1mA C Fall Time Tf 15 μs R = 1KΩ L V = 10V CE Collector Dark Current I 100 nA CEO Ee = 0mW/c㎡ 0.20 0.60 BIN A 0.40 1.08 BIN B 0.72 1.56 BIN C V = 5V CE 1.04 1.80 BIN D Ee = 1mW/c㎡ On State Collector Current I mA C(ON) 1.20 2.40 BIN E λ=940nm 1.60 3.00 BIN F 2.00 3.84 BIN G 2.56 BIN H Part No. : LTR-301 DATA SHEET Page : 2 of 3 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES (25℃ Ambient Temperature Unless Otherwise Noted) ) A W 120 Current- 11000 ation Pc(m 18000 Dark 1 Dissip 60 ctor 0.1 wer 40 eo-Colle 0.01 ector Po 20 Ic 0 oll 0 0 40 80 120 C -40 -20 0 20 40 60 80 100 Ta-Ambient Temperature- o C Ta-Ambient Temperature- o C FIG.1 COLLECTOR DARK CURRENT FIG.2 COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE VS AMBIENT TEMPERATURE 200 me- s 118600 FVV Rc =cL=1=501V0VHz urrent 4.0 Vce= 5V Fall Ti 114200 PW =1ms ctor C 3.0 nd 100 olle 2.0 a 80 C Tf-Rise 4600 elative 1.0 Tr 20 R 0 0 0 2 4 6 8 10 0 1 2 3 4 5 RL-Load Resistance-K Ee-Irradiance-mW/cm2 FIG.3 RISE AND FALL TIME FIG.4 RELATIVE COLLECTOR CURRENT VS LOAD RESISTANCE VS IRRADIANCE 0o 10o 20o 30o y sitivit 1.0 40o n Se 0.9 50o elative 0.8 7600oo R 0.7 80o 90o 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 SENSITIVITY DIAGRAM Part No. : LTR-301 DATA SHEET Page : 3 of 3 BNS-OD-C131/A4