ICGOO在线商城 > 传感器,变送器 > 光学传感器 - 光电晶体管 > LTR-209
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LTR-209产品简介:
ICGOO电子元器件商城为您提供LTR-209由Lite-On设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 LTR-209价格参考。Lite-OnLTR-209封装/规格:光学传感器 - 光电晶体管, Phototransistor 940nm Top View Radial。您可以下载LTR-209参考资料、Datasheet数据手册功能说明书,资料中有LTR-209 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | PHOTOTRANSISTOR PTX 3MM CLEAR光电晶体管 Phototrans Clear |
产品分类 | |
品牌 | Lite-On Inc |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 光电晶体管,Lite-On LTR-209- |
数据手册 | |
产品型号 | LTR-209 |
上升时间 | 10 us |
下降时间 | 15 us |
产品 | Phototransistors |
产品种类 | 光电晶体管 |
其它名称 | 160-1985 |
功率-最大值 | 100mW |
商标 | Lite-On |
安装类型 | 通孔 |
封装 | Bulk |
封装/外壳 | 径向 |
封装/箱体 | T-1 |
工厂包装数量 | 1000 |
最大功率耗散 | 100 mW |
最大工作温度 | + 85 C |
最大暗电流 | 100 nA |
最小工作温度 | - 40 C |
朝向 | 顶视图 |
标准包装 | 1,000 |
波长 | 940nm |
电压-集射极击穿(最大值) | 30V |
电流-暗(Id)(最大值) | 100nA |
电流-集电极(Ic)(最大值) | 4mA |
视角 | 16° |
集电极—发射极最大电压VCEO | 30 V |
集电极—射极击穿电压 | 30 V |
集电极—射极饱和电压 | 0.4 V |
IR Emitter and Detector Product Data Sheet LTR-209 Spec No.: DS-50-93-0012 Effective Date: 05/03/2000 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 http://www.liteon.com/opto BBNNSS--OODD--FFCC000011//AA44 BNS-OD-FC001/A4
L I T E - O N E L E C T R O N I C S , I N C . Property of Lite-On Only FEATURES * WIDE RANGE OF COLLECTOR CURRENT * THE LENS IS FOR HIGH SENSITIVITY * LOW COST PLASTIC PACKAGE * CLEAR TRANSPARENT COLOR PACKAGE PACKAGE DIMENSIONS NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25mm(.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm(.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Part No. : LTR-209 DATA SHEET Page : 1 of 3 BNS-OD-C131/A4
L I T E - O N E L E C T R O N I C S , I N C . Property of Lite-On Only ABSOLUTE MAXIMUM RATINGS AT TA=25℃ PARAMETER MAXIMUM RATING UNIT Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Operating Temperature Range -40℃ to + 85℃ Storage Temperature Range -55℃ to + 100℃ Lead Soldering Temperature 260℃ for 5 Seconds [1.6mm(.063") From Body] ELECTRICAL / OPTICAL CHARACTERISTICS AT TA=25℃ TEST BIN PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITION NO. Collector-Emitter Breakdown I = 1mA C V 30 V Voltage (BR)CEO Ee = 0mW/c㎡ Emitter-Collector Breakdown I = 100μA V 5 V E Voltage (BR)ECO Ee = 0mW/c㎡ Collector Emitter Saturation I = 100μA V 0.4 V C Voltage CE(SAT) Ee = 1mW/c㎡ Rise Time Tr 10 μs VCC = 5V I = 1mA C Fall Time Tf 15 μs R = 1KΩ L V = 10V CE Collector Dark Current I 100 nA CEO Ee = 0mW/c㎡ 0.8 2.4 BIN C V = 5V 1.6 4.8 CE BIN D On State Collector Current I mA Ee = 1mW/c㎡ C(ON) 3.2 9.6 BIN E λ=940nm 6.4 BIN F Part No. : LTR-209 DATA SHEET Page : 2 of 3 BNS-OD-C131/A4
L I T E - O N E L E C T R O N I C S , I N C . Property of Lite-On Only TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES (25℃ Ambient Temperature Unless Otherwise Noted) A W) 120 Current- 11000 ation Pc(m 18000 Dark 1 Dissip 60 ctor 0.1 wer 40 Iceo-Colle 0.001 ollector Po 200 0 40 80 120 C -40 -20 0 20 40 60 80 100 Ta-Ambient Temperature- o C Ta-Ambient Temperature- o C FIG.1 COLLECTOR DARK CURRENT FIG.2 COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE VS AMBIENT TEMPERATURE 200 me- s 118600 FVV Rc =cL=1=501V0VHz urrent 4.0 Vce= 5V nd Fall Ti 111420000 PW =1ms tf ollector C 32..00 a 80 C Tf-Rise 4600 tr elative 1.0 Tr 20 R 0 0 0 2 4 6 8 10 0 1 2 3 4 5 RL-Load Resistance-K Ee-Irradiance-mW/cm2 FIG.3 RISE AND FALL TIME FIG.4 RELATIVE COLLECTOR CURRENT VS LOAD RESISTANCE VS IRRADIANCE 0o 10o 20o 30o y sitivit 1.0 40o n Se 0.9 50o elative 0.8 7600oo R 0.7 80o 90o 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 SENSITIVITY DIAGRAM Part No. : LTR-209 DATA SHEET Page : 3 of 3 BNS-OD-C131/A4