LNJ947W8CRA Hight Bright Surface Mounting Chip LED 1005 Type  Absolute Maximum Ratings T = 25°C a  Lighting Color Parameter Symbol Rating Unit  Blue Power dissipation P 40 mW D Forward current I 10 mA F Pulse forward current * I 40 mA FP Reverse voltage V 5 V R Operating ambient temperature T –30 to +85 °C opr Storage temperature T –40 to +100 °C stg Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.  Electro-Optical Characteristics T = 25°C±3°C a Parameter Symbol Conditions Min Typ Max Unit Luminous intensity *1 I I = 5 mA 8.5 18.0 55.0 mcd O F Reverse current I V = 5 V 10 µA R R Forward voltage V I = 5 mA 2.90 3.20 V F F Peak emission wavelength λ I = 5 mA 465 nm P F Dominant emission wavelength *2 λ I = 5 mA 467 472 478 nm d F Spectral half band width Δλ I = 5 mA 20 nm F Note) *1: Measurement tolerance: ±20% *2: Measurement tolerance: ±2 nm IO  IF IF  VF Relative luminous intensity  Ta 1 000 100 1 000 Luminous intensity I (mcd)O11000 Forward current I (mA)F 10 elative luminous intensity (%)100 R 1 1 10 1 10 100 1.0 2.0 3.0 4.0 5.0 −30 0 30 60 90 Forward current I (mA) Forward voltage V (V) Ambient temperature T (°C) F F a Relative luminous intensity  λP IF  Ta 12 %) 100 Y ensity ( 80 XDir−e20c°ti−v1e0° c0h°arac10t°eri2s0t°ics (mA)F 8 nous int 60 −XY50°−40°−30° 80° 30° 40°50° urrent I ative lumi 2400 −7−06°0° 6400°° 607°0° Forward c 4 Rel −80° 20° 80° 0 −90° 90° 0 400 450 500 550 600 100 80 60 40 20 0 20 40 60 80 100 −30 0 30 60 90 Peak emission wavelength λP (nm) Relative luminous intensity (%) Ambient temperature Ta (°C) Publication date: November 2016 Ver. BEK 1

LNJ947W8CRA  Package (Unit: mm) 0.70±0.1 2 1 5 1 5 0. 0 ± 0. 0 ± 5 0 0. 2 0. 0.30±0.1 0.30±0.1 Polarity 2 1 2 1 5 1.Anode 1.00±0.15 0.1 2. Cathode ± 0 5 0. Recommended Land Layout 1.05 0 5 0. 0.50 (Note1)Electrode projection is not included in the package dimensions. (Note2)About solder thickness, please examine the products yourself completely. (Recommended thickness : t=0.10 ㎜～0.15 ㎜) 2 Ver. BEK

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