LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 LME49723 Dual High Fidelity Audio Operational Amplifier CheckforSamples:LME49723 FEATURES DESCRIPTION 1 • EasilyDrives600Ω Loads The LME49723 is part of the ultra-low distortion, low 2 noise, high slew rate operational amplifier series • OptimizedforSuperiorAudioSignalFidelity optimized and fully specified for high performance, • OutputShortCircuitProtection high fidelity applications. Combining advanced • PSRRandCMRRExceed100dB(typ) leading-edge process technology with state-of-the-art circuit design, the LME49723 audio operational • SOICPackage amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49723 APPLICATIONS combines extremely low voltage noise density • HighQualityAudioAmplification (3.6nV/√Hz) with vanishingly low THD+N (0.0002%) to easily satisfy the most demanding audio • HighFidelityPreamplifiers applications. To ensure that the most challenging • HighFidelityMultimedia loads are driven without compromise, the LME49723 • PhonoPreAmps hasahighslewrateof±20V/μsandanoutputcurrent capability of ±26mA. Further, dynamic range is • HighPerformanceProfessionalAudio maximized by an output stage that drives 2kΩ loads • HighFidelityEqualizationandCrossover to within 1V of either power supply voltage and to Networks within1.4Vwhendriving600Ω loads. • HighPerformanceLineDrivers The LME49723's outstanding CMRR (100dB), PSRR • HighPerformanceLineReceivers (100dB), and V (0.3mV) give the amplifier excellent OS • HighFidelityActiveFilters operationalamplifierDCperformance. The LME49723 has a wide supply range of ±2.5V to KEY SPECIFICATIONS ±17V. Over this supply range the LME49723’s input • PowerSupplyVoltageRange:±2.5to±17V circuitry maintains excellent common-mode and power supply rejection, as well as maintaining its low • THD+N(A =1,V =3V ,f =1kHz) V OUT RMS IN input bias current. The LME49723 is unity gain – R =2kΩ:0.0002%(typ) stable. L – R =600Ω:0.0002%(typ) L The LME49723 is available in an 8–lead narrow body • InputNoiseDensity:3.6nV/√Hz(typ) SOIC package. Demonstration boards are available • SlewRate:±8V/μs(typ) foreachpackage. • GainBandwidthProduct:17MHz(typ) • OpenLoopGain(R =600Ω):105dB(typ) L • InputBiasCurrent:200nA(typ) • InputOffsetVoltage:0.3mV(typ) 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. Alltrademarksarethepropertyoftheirrespectiveowners. 2 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2008–2013,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com TYPICAL APPLICATION 150: 3320: 150: 3320: 26.1 k: -- + -- 909: LME49723 LME49723 ++ 22 nF//4.7 nF//500 pF 3.83 k: ++ OUTPUT INPUT 10 pF 47 k: 1+00: 47 nF//33 nF Note: 1% metal film resistors, 5% polypropylene capacitors Figure1. PassivelyEqualizedRIAAPhonoPreamplifier CONNECTION DIAGRAM Dual-In-Line Package 1 8 OUTPUT A V+ 2 7 INVERTING INPUT A OUTPUT B A B - + + - NON-INVERTING 3 6 INVERTING INPUT B INPUT A - 4 5 NON-INVERTING V INPUT B Figure2. SOICPackage SeePackageNumberD0008A Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 2 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 ABSOLUTE MAXIMUM RATINGS(1)(2)(3) PowerSupplyVoltage(V =V+-V-) 36V S StorageTemperature −65°Cto150°C InputVoltage (V-) - 0.7Vto(V+) + 0.7V OutputShortCircuit(4) Continuous PowerDissipation InternallyLimited ESDSusceptibility(5) 800V ESDSusceptibility(6) 180V JunctionTemperature 150°C ThermalResistanceθ (SO) 145°C/W JA TemperatureRangeT ≤T ≤T –40°C≤T ≤85°C MIN A MAX A SupplyVoltageRange ±2.5V≤V ≤±17V S (1) AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur. (2) OperatingRatingsindicateconditionsforwhichthedeviceisfunctional,butdonotensurespecificperformancelimits.Forensured specificationsandtestconditions,seetheElectricalCharacteristics.Theensuredspecificationsapplyonlyforthetestconditionslisted. Someperformancecharacteristicsmaydegradewhenthedeviceisnotoperatedunderthelistedtestconditions. (3) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexasInstrumentsSalesOffice/Distributorsforavailabilityand specifications. (4) AmplifieroutputconnectedtoGND,anynumberofamplifierswithinapackage. (5) Humanbodymodel,100pFdischargedthrougha1.5kΩresistor. (6) MachineModelESDtestiscoveredbyspecificationEIAJIC-121-1981.A200pFcapischargedtothespecifiedvoltageandthen dischargeddirectlyintotheICwithnoexternalseriesresistor(resistanceofdischargepathmustbeunder50Ω). ELECTRICAL CHARACTERISTICS FOR THE LME49723(1)(2) ThespecificationsapplyforV =±15V,R =2kΩ,f =1kHz,T =25°C,unlessotherwisespecified. S L IN A LME49723 Units Symbol Parameter Conditions Typical(3) Limit(4) (Limits) TotalHarmonicDistortion+ AV=1,VOUT=3Vrms RL=2kΩ 0.0002 THD+N %(max) Noise R =600Ω 0.0002 0.0004 L A =1,V =3V IMD IntermodulationDistortion V OUT RMS 0.0005 % Two-tone,60Hz&7kHz4:1 GBWP GainBandwidthProduct 19 15 MHz(min) SR SlewRate ±8 ±6 V/μs(min) V =1V ,–3dB OUT P-P FPBW FullPowerBandwidth referencedtooutputmagnitude 4 MHz atf=1kHz EquivalentInputNoiseVoltage f =20Hzto20kHz 0.45 0.65 μV (max) BW RMS en f=1kHz 3.2 5 nV/√Hz EquivalentInputNoiseDensity f=10Hz 8.5 (max) i f=1kHz 0.7 n CurrentNoiseDensity pA/√Hz f=10Hz 1.3 V OffsetVoltage ±0.3 1 mV(max) OS ΔV /ΔTe AverageInputOffsetVoltage OS –40°C≤T ≤85°C 0.2 μV/°C mp DriftvsTemperature A PSRR AverageInputOffsetVoltage ΔV =20V(5) 100 95 dB(min) ShiftvsPowerSupplyVoltage S f =1kHz 118 ISO Channel-to-ChannelIsolation IN dB CH-CH f =20kHz 112 IN I InputBiasCurrent V =0V 200 300 nA(max) B CM (1) AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur. (2) OperatingRatingsindicateconditionsforwhichthedeviceisfunctional,butdonotensurespecificperformancelimits.Forensured specificationsandtestconditions,seetheElectricalCharacteristics.Theensuredspecificationsapplyonlyforthetestconditionslisted. Someperformancecharacteristicsmaydegradewhenthedeviceisnotoperatedunderthelistedtestconditions. (3) Typicalspecificationsarespecifiedat+25ºCandrepresentthemostlikelyparametricnorm. (4) TestedlimitsarespecifiedtoAOQL(AverageOutgoingQualityLevel). (5) PSRRismeasuredasfollows:V ismeasuredattwosupplyvoltages,±5Vand±15V.PSRR=|20log(ΔV /ΔV )|. OS OS S Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR THE LME49723(1)(2) (continued) ThespecificationsapplyforV =±15V,R =2kΩ,f =1kHz,T =25°C,unlessotherwisespecified. S L IN A LME49723 Units Symbol Parameter Conditions Typical(3) Limit(4) (Limits) ΔI /ΔTe InputBiasCurrentDriftvs OS –40°C≤T ≤85°C 0.1 nA/°C mp Temperature A I InputOffsetCurrent V =0V 7 100 nA(max) OS CM (V+)– Common-ModeInputVoltage V ±14 2.0 V(min) IN-CM Range (V-)+2.0 CMRR Common-ModeRejection –10V<Vcm<10V 100 90 dB(min) DifferentialInputImpedance 30 kΩ ZIN CommonModeInput –10V<Vcm<10V 1000 MΩ Impedance –10V<Vout<10V,R =600Ω 100 98 L A OpenLoopVoltageGain –10V<Vout<10V,R =2kΩ 105 dB(min) VOL L –10V<Vout<10V,R =10kΩ 105 L R =600Ω ±13.5 ±12.5 L MaximumOutputVoltage V R =2kΩ ±14.0 V(min) OUTMAX Swing L R =10kΩ ±14.1 L I OutputCurrent R =600Ω,V =±17V ±25 ±21 mA(min) OUT L S InstantaneousShortCircuit +53 I mA OUT-CC Current –42 f =10kHz IN R OutputImpedance Closed-Loop 0.01 Ω OUT Open-Loop 13 CapacitiveLoadDrive C 100pF 16 % LOAD Overshoot I TotalQuiescentCurrent I =0mA 6.7 7.5 mA(max) S OUT 4 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 TYPICAL PERFORMANCE CHARACTERISTICS THD+NvsOutputVoltage THD+NvsOutputVoltage V =±5V,R =2kΩ V =±5V,R =10kΩ S L S L 0.1 0.1 0.01 0.01 %) %) N ( N ( + + D D H H T T 0.001 0.001 0.0001 0.0001 10m 100m 1 2 3 10m 100m 1 3 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) Figure3. Figure4. THD+NvsOutputVoltage THD+NvsOutputVoltage V =±5V,R =600Ω V =±15V,R =2kΩ S L S L 0.1 0.1 0.01 0.01 %) %) N ( +N ( 0.001 + D D H H T T 0.001 0.0001 0.0001 0.00001 10m 100m 1 2 3 10m 100m 1 10 20 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) Figure5. Figure6. THD+NvsOutputVoltage THD+NvsOutputVoltage V =±15V,R =10kΩ V =±15V,R =600Ω S L S L 0.1 0.1 0.01 0.01 %) %) +N ( 0.001 +N ( 0.001 D D H H T T 0.0001 0.0001 0.00001 0.00001 10m 100m 1 10 20 10m 100m 1 10 20 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) Figure7. Figure8. Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) THD+NvsFrequency THD+NvsFrequency V =±15V,V =3V ,R =2kΩ V =±15V,V =3V ,R =10kΩ S OUT RMS L S OUT RMS L 0.1 0.1 0.001 0.001 %) %) N ( N ( + + D D H H T T 0.0001 0.0001 0.00001 0.00001 20 200 2k 20k 20 200 2k 20k FREQUENCY (Hz) FREQUENCY (Hz) Figure9. Figure10. THD+NvsFrequency PSRR+vsFrequency V =±15V,V =3V ,R =600Ω V =±15V,R =2kΩ,V =200mV S OUT RMS L S L RIPPLE PP 0.1 +0 -10 -20 -30 -40 0.001 D+N (%) R (dB) ---765000 H R -80 T0.0001 PS -90 -100 -110 -120 -130 0.00001 -140 20 200 2k 20k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure11. Figure12. PSRR+vsFrequency PSRR+vsFrequency V =±5V,R =10kΩ,V =200mV V =±5V,R =600Ω,V =200mV S L RIPPLE PP S L RIPPLE PP +0 +0 -10 -10 -20 -20 -30 -30 -40 -40 -50 -50 B) -60 B) -60 d d R ( -70 R ( -70 R -80 R -80 S S P -90 P -90 -100 -100 -110 -110 -120 -120 -130 -130 -140 -140 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure13. Figure14. 6 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) PSRR+vsFrequency PSRR+vsFrequency V =±15V,R =2kΩ,V =200mV V =±15V,R =10kΩ,V =200mV S L RIPPLE PP S L RIPPLE PP +0 +0 -10 -10 -20 -20 -30 -30 -40 -40 -50 -50 B) -60 B) -60 d d R ( -70 R ( -70 R -80 R -80 S S P -90 P -90 -100 -100 -110 -110 -120 -120 -130 -130 -140 -140 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure15. Figure16. PSRR+vsFrequency PSRR-vsFrequency V =±15V,R =600Ω,V =200mV V =±5V,R =2kΩ,V =200mV S L RIPPLE PP S L RIPPLE PP +0 +0 -10 -10 -20 -20 -30 -30 -40 -40 -50 -50 B) -60 B) -60 d d R ( -70 R ( -70 R -80 R -80 S S P -90 P -90 -100 -100 -110 -110 -120 -120 -130 -130 -140 -140 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure17. Figure18. PSRR-vsFrequency PSRR-vsFrequency V =±5V,R =10kΩ,V =200mV V =±5V,R =600Ω,V =200mV S L RIPPLE PP S L RIPPLE PP +0 +0 -10 -10 -20 -20 -30 -30 -40 -40 -50 -50 B) -60 B) -60 d d R ( -70 R ( -70 SR -80 SR -80 P -90 P -90 -100 -100 -110 -110 -120 -120 -130 -130 -140 -140 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure19. Figure20. Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) PSRR-vsFrequency PSRR-vsFrequency V =±15V,R =2kΩ,V =200mV V =±15V,R =10kΩ,V =200mV S L RIPPLE PP S L RIPPLE PP +0 +0 -10 -10 -20 -20 -30 -30 -40 -40 -50 -50 B) -60 B) -60 d d R ( -70 R ( -70 R -80 R -80 S S P -90 P -90 -100 -100 -110 -110 -120 -120 -130 -130 -140 -140 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure21. Figure22. PSRR-vsFrequency CMRRvsFrequency V =±15V,R =10kΩ,V =200mV V =±15V,R =2kΩ,V =200mV S L RIPPLE PP S L IN PP +0 +0 -10 -10 -20 -20 -30 -30 -40 -40 -50 B) -60 B) -50 d d R ( -70 R ( -60 SR -80 MR -70 P -90 C -80 -100 -90 -110 -100 -120 -130 -110 -140 -120 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure23. Figure24. CMRRvsFrequency CMRRvsFrequency V =±15V,R =10kΩ,V =200mV V =±15V,R =600Ω,V =200mV S L IN PP S L IN PP +0 +0 -10 -10 -20 -20 -30 -30 -40 -40 B) -50 B) -50 R (d -60 R (d -60 R R M -70 M -70 C C -80 -80 -90 -90 -100 -100 -110 -110 -120 -120 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure25. Figure26. 8 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) CrosstalkvsFrequency CrosstalkvsFrequency V =±15V,V =3V ,R =2kΩ, V =±15V,V =3V ,R =10kΩ, S OUT RMS L S OUT RMS L +0 0.01 -10 0.005 -20 0.002 -30 B) -40 0.001 d K ( -50 0.0005 L TA -60 % S 0.0002 S -70 O R -80 0.0001 C -90 0.00005 -100 0.00002 -110 -120 0.00001 20 200 2k 20k 20 50 100200 500 1k 2k 5k 10k20k Hz FREQUENCY (Hz) Figure27. Figure28. CrosstalkvsFrequency IMDvsOutputVoltage V =±15V,V =3V ,R =600Ω, V =±5V,R =2kΩ, S OUT RMS L S L 0.01 0.1 0.005 0.002 0.001 0.01 0.0005 %) % N ( + 0.0002 D H T 0.0001 0.001 0.00005 0.00002 0.00001 0.0001 20 50 100200 500 1k 2k 5k 10k20k 10m 100m 1 2 5 Hz OUTPUT VOLTAGE (V) Figure29. Figure30. IMDvsOutputVoltage IMDvsOutputVoltage V =±5V,R =10kΩ, V =±5V,R =600Ω, S L S L 0.1 0.1 0.01 0.01 %) %) N ( N ( + + D D H H T T 0.001 0.001 0.0001 0.0001 10m 100m 1 2 5 10m 100m 1 2 5 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) Figure31. Figure32. Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) OutputVoltagevsLoadResistance OutputVoltagevsLoadResistance V =±5V,THD+N=1% V =15V,V =–15V,THD+N=0.1% S DD SS 3.0 10.0 2.8 9.8 E E G G A A T 2.6 T 9.6 L L O O V V T T PU 2.4 PU 9.4 T T U U O O 2.2 9.2 2.0 9.0 500 600 800 2k 5k 10k 500 600 800 2k 5k 10k LOAD RESISTANCE LOAD RESISTANCE Figure33. Figure34. OutputVoltagevsSupplyVoltage OutputVoltagevsSupplyVoltage R =2kΩ,THD+N=0.1% R =10kΩ,THD+N=0.1% L L 12 12 10 10 V) V) E ( 8 E ( 8 G G A A T T L L O 6 O 6 V V T T U U P 4 P 4 T T U U O O 2 2 0 0 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure35. Figure36. OutputVoltagevsSupplyVoltage SupplyCurrentvsSupplyVoltage R =600Ω,THD+N=1% R =2kΩ L L 12 7 6 10 )MS A) E (VR 8 NT(m 5 AG RE 4 T 6 R L U UT VO 4 PLY C 3 P P 2 T U U S O 2 1 0 0 4 6 8 10 12 14 16 18 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.518.5 SUPPLY VOLTAGE (±V) SUPPLY VOLTAGE (V) Figure37. Figure38. 10 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) SupplyCurrentvsSupplyVoltage SupplyCurrentvsSupplyVoltage R =10kΩ R =600Ω L L 7 7 6 6 A) A) m 5 m 5 T( T( N N RE 4 RE 4 R R U U C 3 C 3 Y Y L L P P P 2 P 2 U U S S 1 1 0 0 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.518.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.518.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure39. Figure40. NoninvertingAmp NoninvertingAmp Figure41. Figure42. InvertingAmp VoltageGain&PhasevsFrequency Figure43. Figure44. Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) PowerBandwidth EquivalentInputNoisevsFrequency 10 E PUT NOISV/ Hz) 5 Nn NT IGE ( VALEOLTA UIV 2 Q E 1 10 100 1k 10k 100k FREQUENCY (Hz) Figure45. Figure46. 12 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 APPLICATION INFORMATION DISTORTION MEASUREMENTS The vanishingly low residual distortion produced by LME49723 is below the capabilities of all commercially available equipment. This makes distortion measurements just slightly more difficult than simply connecting a distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional resistor.Addingthisresistorextendstheresolutionofthedistortionmeasurementequipment. TheLME49723’slowresidualdistortionisaninputreferredinternalerror.AsshowninFigure47,addingthe10Ω resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise gain. The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means that measurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep the valueofR1lowasshowninFigure47. This technique is verified by duplicating the measurements with high closed loop gain and/or making the measurements at high frequencies. Doing so produces distortion components that are within the measurement equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above described circuitconnectedtoanAudioPrecisionSystemTwoCascade. R2 1000: - R1 LME49723 10: Distortion Signal Gain = 1+(R2/R1) + Generator Output Analyzer Input Audio Precision System Two Cascade Actual Distortion = AP Value/100 Figure47. THD+NandIMDDistortionTestCircuit The LME49723 is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF willcauselittlechangeinthephasecharacteristicsoftheamplifiersandarethereforeallowable. Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this is to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is accidentallyshorted. Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com Completeshieldingisrequiredtopreventinducedpickupfromexternalsources.Alwayscheckwithoscilloscopefor powerlinenoise. Figure48. NoiseMeasurementCircuitTotalGain:115dB@f=1kHz InputReferredNoiseVoltage:e =V0/560,000(V) n Figure49.RIAAPreampVoltageGain, Figure50.FlatAmpVoltageGainvsFrequency RIAADeviationvsFrequency TYPICAL APPLICATIONS V =V1–V2 O Figure51. BalancedtoSingleEndedConverter 14 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 V =V1+V2−V3−V4 O Figure52. Adder/Subtracter Figure53. SineWaveOscillator Illustrationisf =1kHz 0 Figure54. SecondOrderHighPassFilter(Butterworth) Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com Illustrationisf =1kHz 0 Figure55. SecondOrderLowPassFilter(Butterworth) Illustrationisf =1kHz,Q=10,A =1 0 BP Figure56. StateVariableFilter Figure57. AC/DCConverter 16 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 Figure58. 2ChannelPanningCircuit(PanPot) Figure59. LineDriver Illustrationis: f =32Hz,f =320Hz L LB f =11kHz,f =1.1kHz H HB Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com Figure60. ToneControl A =35dB v E =0.33μV n S/N=90dB f=1kHz AWeighted AWeighted,V =10mV IN @f=1kHz Figure61. RIAAPreamp Illustrationis: V0=101(V2−V1) Figure62. BalancedInputMicAmp 18 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

LME49723 www.ti.com SNAS429B–JANUARY2008–REVISEDAPRIL2013 Figure63. BandGraphicEqualizer fo(Hz) C C R R 1 2 1 2 32 0.12μF 4.7μF 75kΩ 500Ω 64 0.056μF 3.3μF 68kΩ 510Ω 125 0.033μF 1.5μF 62kΩ 510Ω 250 0.015μF 0.82μF 68kΩ 470Ω 500 8200pF 0.39μF 62kΩ 470Ω 1k 3900pF 0.22μF 68kΩ 470Ω 2k 2000pF 0.1μF 68kΩ 470Ω 4k 1100pF 0.056μF 62kΩ 470Ω 8k 510pF 0.022μF 68kΩ 510Ω 16k 330pF 0.012μF 51kΩ 510Ω Copyright©2008–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LME49723

LME49723 SNAS429B–JANUARY2008–REVISEDAPRIL2013 www.ti.com REVISION HISTORY Rev Date Description 1.0 01/07/08 Initialrelease. 1.01 02/11/08 Textedits. B 04/04/13 ChangedlayoutofNationalDataSheettoTIformat. 20 SubmitDocumentationFeedback Copyright©2008–2013,TexasInstrumentsIncorporated ProductFolderLinks:LME49723

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) LME49723MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS SN Level-1-260C-UNLIM -40 to 85 L49723 & no Sb/Br) MA LME49723MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS SN Level-1-260C-UNLIM -40 to 85 L49723 & no Sb/Br) MA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 4-May-2017 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) LME49723MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 4-May-2017 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) LME49723MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 PackMaterials-Page2

PACKAGE OUTLINE D0008A SOIC - 1.75 mm max height SCALE 2.800 SMALL OUTLINE INTEGRATED CIRCUIT C SEATING PLANE .228-.244 TYP [5.80-6.19] .004 [0.1] C A PIN 1 ID AREA 6X .050 [1.27] 8 1 2X .189-.197 [4.81-5.00] .150 NOTE 3 [3.81] 4X (0 -15 ) 4 5 8X .012-.020 B .150-.157 [0.31-0.51] .069 MAX [3.81-3.98] .010 [0.25] C A B [1.75] NOTE 4 .005-.010 TYP [0.13-0.25] 4X (0 -15 ) SEE DETAIL A .010 [0.25] .004-.010 0 - 8 [0.11-0.25] .016-.050 [0.41-1.27] DETAIL A (.041) TYPICAL [1.04] 4214825/C 02/2019 NOTES: 1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed .006 [0.15] per side. 4. This dimension does not include interlead flash. 5. Reference JEDEC registration MS-012, variation AA. www.ti.com

EXAMPLE BOARD LAYOUT D0008A SOIC - 1.75 mm max height SMALL OUTLINE INTEGRATED CIRCUIT 8X (.061 ) [1.55] SYMM SEE DETAILS 1 8 8X (.024) [0.6] SYMM (R.002 ) TYP [0.05] 5 4 6X (.050 ) [1.27] (.213) [5.4] LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:8X SOLDER MASK SOLDER MASK METAL OPENING OPENING METAL UNDER SOLDER MASK EXPOSED METAL EXPOSED METAL .0028 MAX .0028 MIN [0.07] [0.07] ALL AROUND ALL AROUND NON SOLDER MASK SOLDER MASK DEFINED DEFINED SOLDER MASK DETAILS 4214825/C 02/2019 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com

EXAMPLE STENCIL DESIGN D0008A SOIC - 1.75 mm max height SMALL OUTLINE INTEGRATED CIRCUIT 8X (.061 ) [1.55] SYMM 1 8 8X (.024) [0.6] SYMM (R.002 ) TYP [0.05] 5 4 6X (.050 ) [1.27] (.213) [5.4] SOLDER PASTE EXAMPLE BASED ON .005 INCH [0.125 MM] THICK STENCIL SCALE:8X 4214825/C 02/2019 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. www.ti.com

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