LF444 www.ti.com SNOSC04D–MAY1998–REVISEDMARCH2013 LF444 Quad Low Power JFET Input Operational Amplifier CheckforSamples:LF444 FEATURES DESCRIPTION 1 • ¼SupplyCurrentofaLM148:200 μA/Amplifier The LF444 quad low power operational amplifier 23 provides many of the same AC characteristics as the (max) industry standard LM148 while greatly improving the • LowInputBiasCurrent:50pA(max) DC characteristics of the LM148. The amplifier has • HighGainBandwidth:1MHz the same bandwidth, slew rate, and gain (10 kΩ load) • HighSlewRate:1V/μs as the LM148 and only draws one fourth the supply current of the LM148. In addition the well matched • LowNoiseVoltageforLowPower35nV/√Hz high voltage JFET input devices of the LF444 reduce • LowInputNoiseCurrent0.01pA/√Hz the input bias and offset currents by a factor of • HighInputImpedance:1012Ω 10,000 over the LM148. The LF444 also has a very low equivalent input noise voltage for a low power • HighGain:50k(min) amplifier. The LF444 is pin compatible with the LM148 allowing an immediate 4 times reduction in power drain in many applications. The LF444 should be used wherever low power dissipation and good electrical characteristicsarethemajorconsiderations. SimplifiedSchematic ConnectionDiagram Figure1.1/4Quad Figure2.PDIP/SOICPackage TopView SeePackageNumberNAK0014D,D0014Aor NFF0014A Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. BI-FETisatrademarkofTexasInstruments. 2 Allothertrademarksarethepropertyoftheirrespectiveowners. 3 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©1998–2013,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

LF444 SNOSC04D–MAY1998–REVISEDMARCH2013 www.ti.com Absolute Maximum Ratings(1)(2)(3) LF444A LF444 SupplyVoltage ±22V ±18V DifferentialInputVoltage ±38V ±30V InputVoltageRange(4) ±19V ±15V OutputShortCircuitDuration(5) Continuous Continuous NAKPackage D,NFF Packages PowerDissipation(6)(7) 900mW 670mW T max 150°C 115°C j θ (Typical) 100°C/W 85°C/W jA LF444A/LF444 OperatingTemperatureRange See(8) ESDTolerance(9) Ratingtobedetermined StorageTemperatureRange −65°C≤T ≤150°C A SolderingInformation Dual-In-LinePackages(Soldering,10sec.) 260°C SmallOutlinePackage VaporPhase(60sec.) 215°C Infrared(15sec.) 220°C (1) AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur.Operatingratingsindicateconditionsfor whichthedeviceisfunctional,butdonotensurespecificperformancelimits.ElectricalCharacteristicsstateDCandACelectrical specificationsunderparticulartestconditionswhichensurespecificperformancelimits.Thisassumesthatthedeviceiswithinthe OperatingRatings.Specificationsarenotensuredforparameterswherenolimitisgiven,however,thetypicalvalueisagoodindication ofdeviceperformance. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityandspecifications. (3) RefertoRETS444XforLF444MDmilitaryspecifications. (4) Unlessotherwisespecifiedtheabsolutemaximumnegativeinputvoltageisequaltothenegativepowersupplyvoltage. (5) Anyoftheamplifieroutputscanbeshortedtogroundindefinitely,however,morethanoneshouldnotbesimultaneouslyshortedasthe maximumjunctiontemperaturewillbeexceeded. (6) Foroperatingatelevatedtemperature,thesedevicesmustbederatedbasedonathermalresistanceofθ . jA (7) Max.PowerDissipationisdefinedbythepackagecharacteristics.OperatingthepartneartheMax.PowerDissipationmaycausethe parttooperateoutsideensuredlimits. (8) TheLF444Aisavailableinboththecommercialtemperaturerange0°C≤T ≤70°Candthemilitarytemperaturerange−55°C≤T ≤ A A 125°C.TheLF444isavailableinthecommercialtemperaturerangeonly.Thetemperaturerangeisdesignatedbythepositionjust beforethepackagetypeinthedevicenumber.A“C”indicatesthecommercialtemperaturerangeandan“M”indicatesthemilitary temperaturerange.Themilitarytemperaturerangeisavailablein“NAK”packageonly. (9) Humanbodymodel,1.5kΩinserieswith100pF. DC Electrical Characteristics (1) Symbol Parameter Conditions LF444A LF444 Units Min Typ Max Min Typ Max V InputOffsetVoltage R =10k,T =25°C 2 5 3 10 mV OS S A 0°C≤T ≤+70°C 6.5 12 mV A −55°C≤T ≤+125°C 8 mV A ΔV /ΔT AverageTCofInputOffset R =10kΩ OS S 10 10 μV/°C Voltage I InputOffsetCurrent V =±15V(1) (2) T =25°C 5 25 5 50 pA OS S j T =70°C 1.5 1.5 nA j T =125°C 10 nA j I InputBiasCurrent V =±15V(1) (2) T =25°C 10 50 10 100 pA B S j T =70°C 3 3 nA j T =125°C 20 nA j (1) UnlessotherwisespecifiedthespecificationsapplyoverthefulltemperaturerangeandforV =±20VfortheLF444AandforV =±15V S S fortheLF444.V ,I ,andI aremeasuredatV =0. OS B OS CM (2) Theinputbiascurrentsarejunctionleakagecurrentswhichapproximatelydoubleforevery10°Cincreaseinthejunctiontemperature, T.Duetolimitedproductiontesttime,theinputbiascurrentsmeasuredarecorrelatedtojunctiontemperature.Innormaloperationthe j junctiontemperaturerisesabovetheambienttemperatureasaresultofinternalpowerdissipation,P .T =T +θ P whereθ isthe D j A jA D jA thermalresistancefromjunctiontoambient.Useofaheatsinkisrecommendedifinputbiascurrentistobekepttoaminimum. 2 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:LF444

LF444 www.ti.com SNOSC04D–MAY1998–REVISEDMARCH2013 DC Electrical Characteristics (1) (continued) Symbol Parameter Conditions LF444A LF444 Units Min Typ Max Min Typ Max R InputResistance T =25°C 1012 1012 Ω IN j A LargeSignalVoltageGain V =±15V,V =±10V 50 100 25 100 V/mV VOL S O R =10kΩ,T =25°C L A OverTemperature 25 15 V/mV V OutputVoltageSwing V =±15V,R =10kΩ ±12 ±13 ±12 ±13 V O S L V InputCommon-Mode ±16 +18 ±11 +14 V CM VoltageRange −17 −12 V CMRR Common-Mode R ≤10kΩ 80 100 70 95 dB S RejectionRatio PSRR SupplyVoltage See(3) 80 100 70 90 dB RejectionRatio I SupplyCurrent 0.6 0.8 0.6 1.0 mA S (3) Supplyvoltagerejectionratioismeasuredforbothsupplymagnitudesincreasingordecreasingsimultaneouslyinaccordancewith commonpracticefrom±15Vto±5VfortheLF444andfrom±20Vto±5VfortheLF444A. AC Electrical Characteristics (1) Symbol Parameter Conditions LF444A LF444 Units Min Typ Max Min Typ Max Amplifier-to-Amplifier −120 −120 dB Coupling SR SlewRate V =±15V,T =25°C 1 1 V/μs S A GBW Gain-BandwidthProduct V =±15V,T =25°C 1 1 MHz S A e EquivalentInputNoiseVoltage T =25°C,R =100Ω, 35 35 nV/√Hz n A S f=1kHz i EquivalentInputNoiseCurrent T =25°C,f=1kHz 0.01 0.01 pA/√Hz n A (1) UnlessotherwisespecifiedthespecificationsapplyoverthefulltemperaturerangeandforV =±20VfortheLF444AandforV =±15V S S fortheLF444.V ,I ,andI aremeasuredatV =0. OS B OS CM Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LF444

LF444 SNOSC04D–MAY1998–REVISEDMARCH2013 www.ti.com Typical Performance Characteristics InputBiasCurrent InputBiasCurrent Figure3. Figure4. PositiveCommon-Mode SupplyCurrent InputVoltageLimit Figure5. Figure6. NegativeCommon-Mode InputVoltageLimit PositiveCurrentLimit Figure7. Figure8. 4 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:LF444

LF444 www.ti.com SNOSC04D–MAY1998–REVISEDMARCH2013 Typical Performance Characteristics (continued) NegativeCurrentLimit OutputVoltageSwing Figure9. Figure10. OutputVoltageSwing GainBandwidth Figure11. Figure12. BodePlot SlewRate Figure13. Figure14. Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LF444

LF444 SNOSC04D–MAY1998–REVISEDMARCH2013 www.ti.com Typical Performance Characteristics (continued) Distortion vs UndistortedOutput Frequency VoltageSwing Figure15. Figure16. OpenLoop Common-Mode FrequencyResponse RejectionRatio Figure17. Figure18. PowerSupply EquivalentInput RejectionRatio NoiseVoltage Figure19. Figure20. 6 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:LF444

LF444 www.ti.com SNOSC04D–MAY1998–REVISEDMARCH2013 Typical Performance Characteristics (continued) OpenLoopVoltageGain OutputImpedance Figure21. Figure22. InverterSettlingTime Figure23. Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LF444

LF444 SNOSC04D–MAY1998–REVISEDMARCH2013 www.ti.com Pulse Response R =10kΩ,C =10pF L L SmallSignalInverting LargeSignalInverting Figure24. Figure25. SmallSignalNon-Inverting LargeSignalNon-Inverting Figure26. Figure27. 8 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:LF444

LF444 www.ti.com SNOSC04D–MAY1998–REVISEDMARCH2013 APPLICATION HINTS This device is a quad low power op amp with JFET input devices ( BI-FET™). These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for clamps across the inputs. Therefore, large differential input voltages can easily be accommodated without a large increase in input current. The maximum differential input voltage is independent of the supply voltages. However, neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to flow which can result in a destroyedunit. Exceeding the negative common-mode limit on either input will force the output to a high state, potentially causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force the amplifier output to a high state. In neither case does a latch occur since raising the input back within the common-moderangeagainputstheinputstageandthustheamplifierinanormaloperatingmode. Exceeding the positive common-mode limit on a single input will not change the phase of the output; however, if bothinputsexceedthelimit,theoutputoftheamplifierwillbeforcedtoahighstate. The amplifiers will operate with a common-mode input voltage equal to the positive supply; however, the gain bandwidth and slew rate may be decreased in this condition. When the negative common-mode voltage swings towithin3Vofthenegativesupply,anincreaseininputoffsetvoltagemayoccur. Each amplifier is individually biased to allow normal circuit operation with power supplies of ±3.0V. Supply voltageslessthanthesemaydegradethecommon-moderejectionandrestricttheoutputvoltageswing. The amplifiers will drive a 10 kΩ load resistance to ±10V over the full temperature range. If the amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the negative voltage swingandfinallyreachanactivecurrentlimitonbothpositiveandnegativeswings. Precautionsshouldbetakentoensurethatthepowersupplyfortheintegratedcircuitneverbecomesreversedin polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed unit. As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in order to ensure stability. For example, resistors from the output to an input should be placed with the body close to the input to minimize “pick-up” and maximize the frequency of the feedback pole by minimizing the capacitancefromtheinputtoground. A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole. In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less thanapproximately6timestheexpected3dBfrequencyaleadcapacitorshouldbeplacedfromtheoutputtothe input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor andtheresistanceitparallelsisgreaterthanorequaltotheoriginalfeedbackpoletimeconstant. Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LF444

LF444 SNOSC04D–MAY1998–REVISEDMARCH2013 www.ti.com Typical Application Figure28. pHProbeAmplifier/TemperatureCompensator ***ForR2=50k,R4=330k±1% ForR2=100k,R4=75k±1% ForR2=200k,R4=56k±1% **Polystyrene *FilmresistortypeRN60C Tocalibrate,insertprobeinpH=7solution.Setthe“TEMPERATUREADJUST”pot,R2,tocorrespondtothesolution temperature:fullclockwisefor0°C,andproportionatelyforintermediatetemperatures,usingaturns-countingdial. Thenset“CALIBRATE”potsooutputreads7V. Typicalprobe=IngoldElectrodes#465-35 Detailed Schematic Figure29. 1/4Quad 10 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:LF444

LF444 www.ti.com SNOSC04D–MAY1998–REVISEDMARCH2013 REVISION HISTORY ChangesfromRevisionC(March2013)toRevisionD Page • ChangedlayoutofNationalDataSheettoTIformat.......................................................................................................... 10 Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LF444

PACKAGE OPTION ADDENDUM www.ti.com 22-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) LF444ACN/NOPB ACTIVE PDIP NFF 14 25 Green (RoHS Call TI | SN Level-1-NA-UNLIM 0 to 70 LF444ACN & no Sb/Br) LF444CM NRND SOIC D 14 55 TBD Call TI Call TI 0 to 70 LF444CM LF444CM/NOPB ACTIVE SOIC D 14 55 Green (RoHS SN Level-1-260C-UNLIM 0 to 70 LF444CM & no Sb/Br) LF444CMX/NOPB ACTIVE SOIC D 14 2500 Green (RoHS SN Level-1-260C-UNLIM 0 to 70 LF444CM & no Sb/Br) LF444CN/NOPB ACTIVE PDIP NFF 14 25 Green (RoHS Call TI | SN Level-1-NA-UNLIM 0 to 70 LF444CN & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 22-Feb-2020 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) LF444CMX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) LF444CMX/NOPB SOIC D 14 2500 367.0 367.0 35.0 PackMaterials-Page2

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MECHANICAL DATA N0014A N14A (Rev G) www.ti.com

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