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KST42MTF产品简介:
ICGOO电子元器件商城为您提供KST42MTF由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 KST42MTF价格参考¥0.42-¥0.56。Fairchild SemiconductorKST42MTF封装/规格:晶体管 - 双极 (BJT) - 单, Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 350mW Surface Mount SOT-23-3。您可以下载KST42MTF参考资料、Datasheet数据手册功能说明书,资料中有KST42MTF 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS NPN 300V 350MW SOT23两极晶体管 - BJT NPN Si Transistor Epitaxial |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,Fairchild Semiconductor KST42MTF- |
数据手册 | |
产品型号 | KST42MTF |
PCN组件/产地 | |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 500mV @ 2mA,20mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 40 @ 30mA,10V |
产品目录页面 | |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | SOT-23 |
其它名称 | KST42MTFTR |
功率-最大值 | 350mW |
包装 | 带卷 (TR) |
单位重量 | 60 mg |
发射极-基极电压VEBO | 6 V |
商标 | Fairchild Semiconductor |
增益带宽产品fT | 50 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工厂包装数量 | 3000 |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大功率耗散 | 350 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.5 A |
标准包装 | 3,000 |
电压-集射极击穿(最大值) | 300V |
电流-集电极(Ic)(最大值) | 500mA |
电流-集电极截止(最大值) | - |
直流集电极/BaseGainhfeMin | 40 |
系列 | KST42MT |
配置 | Single |
集电极—发射极最大电压VCEO | 300 V |
集电极—基极电压VCBO | 300 V |
集电极—射极饱和电压 | 0.5 V |
集电极连续电流 | 0.5 A |
零件号别名 | KST42MTF_NL |
频率-跃迁 | 50MHz |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
K S T 4 July 2014 2 / K S T 4 3 KST42 / KST43 — N NPN Epitaxial Silicon Transistor P N E p Features i t a • High-Voltage Transistor 3 xi a l S i 2 li c o SOT-23 1 n 1. Base 2. Emitter 3. Collector T r a n s Ordering Information i s t o r Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit KST42 300 V Collector-Base Voltage V CBO KST43 200 KST42 300 V Collector-Emitter Voltage V CEO KST43 200 V Emitter-Base Voltage 6 V EBO I Collector Current - Continuous 500 mA C T T Junction and Storage Temperature Range -55 to +150 °C J , STG Thermal Characteristics Values are at T = 25°C unless otherwise noted. A Symbol Parameter Max. Unit P Collector Power Dissipation 350 mW C RθJA Thermal Resistance, Junction to Ambient 357 °C/W © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KST42 / KST43 Rev. 1.1.0
K S Electrical Characteristics T 4 Values are at T = 25°C unless otherwise noted. 2 A / K Symbol Parameter Conditions Min. Max. Unit S T VCBO CVoolltlaegcetor-Base Breakdown KKSSTT4432 IC = 100 μA, IE = 0 320000 V 43 — Collector-Emitter Breakdown KST42 300 V I = 1 mA, I = 0 V N CEO Voltage(1) KST43 C B 200 P N VEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 V E I Collector Cut-Off Current V = 200 V, I = 0 0.1 μA p CBO CB E i t I Emitter Cut-Off Current V = 5 V, I = 0 0.1 μA a EBO EB C x i V = 10 V, I = 1 mA 25 a CE C l h DC Current Gain(1) V = 10 V, I = 10 mA 40 S FE CE C i l i V = 10 V, I = 30 mA 40 c CE C o V (sat) Collector-Emitter Saturation Voltage(1) I = 20 mA, I = 2 mA 0.5 V n CE C B T VBE(sat) Base-Emitter Saturation Voltage(1) IC = 20 mA, IB = 2 mA 0.9 V ra C Output Capacitance KST42 VCB = 20 V, IE = 0, 3 pF ns ob KST43 f = 1 MHz 4 is t o f Current Gain Bandwidth Product VCE = 20 V, IC = 10 mA, 50 MHz r T f = 100 MHz Note: 1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KST42 / KST43 Rev. 1.1.0 2
K S Typical Performance Characteristics T 4 2 / K 1000 GE 10 S TA IC = 10 IB T L 4 O V 3 N ON — URRENT GAI 100 VCE = 10V V], SATURATI 1 VBE(sat) NPN E C C at)[ 0.1 VCE(sat) p h, DFE sat), V(sCE itaxia 10 V(BE 0.01 l S 1 10 100 1 10 100 i l i c IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT o n Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage and T Base-Emitter Saturation Voltage r a n s is 100 t o IE = 0 CT 120 r f = 1MHz DU O R 100 E P APACITANC 10 MHz],ANDWIDTH 6800 VCE = 20V pF], C f[TAIN B 40 C [cb NT G E 20 R R U 1 C 0 0.1 1 10 100 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KST42 / KST43 Rev. 1.1.0 3
K S Physical Dimensions T 4 2 / K S T 4 3 0.95 2.92±0.20 — 3 N 1.40 P N E p +0.20 1.30 2.20 i -0.15 ta x i a l S 1 2 i (0.29) 0.60 lic 0.95 0.37 o 0.20 A B 1.00 n 1.90 1.90 T r a LAND PATTERN n RECOMMENDATION s i s t 1.20 MAX SEE DETAIL A o r (0.93) 0.10 0.00 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 5. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KST42 / KST43 Rev. 1.1.0 4
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AccuPower(cid:2) F-PFS(cid:2) AX-CAP®* FRFET® ® ®* BitSiC(cid:2) Global Power ResourceSM PowerTrench® TinyBoost® Build it Now(cid:2) GreenBridge(cid:2) PowerXS™ TinyBuck® CorePLUS(cid:2) Green FPS(cid:2) Programmable Active Droop(cid:2) TinyCalc(cid:2) CorePOWER(cid:2) Green FPS(cid:2) e-Series(cid:2) QFET® TinyLogic® CROSSVOLT(cid:2) Gmax(cid:2) QS(cid:2) TINYOPTO(cid:2) CTL(cid:2) GTO(cid:2) Quiet Series(cid:2) TinyPower(cid:2) Current Transfer Logic(cid:2) IntelliMAX(cid:2) RapidConfigure(cid:2) TinyPWM(cid:2) DEUXPEED® ISOPLANAR(cid:2) (cid:2) TinyWire(cid:2) Dual Cool™ Making Small Speakers Sound Louder TranSiC(cid:2) EcoSPARK® and Better™ Saving our world, 1mW/W/kWat a time™ TriFault Detect(cid:2) EfficientMax(cid:2) MegaBuck(cid:2) SignalWise(cid:2) TRUECURRENT®* ESBC(cid:2) MICROCOUPLER(cid:2) SmartMax(cid:2) (cid:3)SerDes(cid:2) ® MicroFET(cid:2) SMART START(cid:2) FFFFFFFFaAPAAEaasiiCSCSTrrtccB(cid:2)TvTThhC®e® iiQll noddcur ®eShi e(cid:2)(cid:2)et m Siecroiensd(cid:2)uc tor® MMMMmOOOPpPWioiilcclttTTerroiSooorOOHDnPaPPLiMvrTaaOieLkvk(cid:2)arAe2(cid:2)G®x (cid:2)N(cid:2) (cid:2)I CA ®R ® SSSSSSSSSuTouuPuuypnpplppEMuecereeAte®rFirrrSoL FMSSEnOTEOOTOsHTT(cid:2) TTSf(cid:2)(cid:2)®o(cid:2)(cid:2) ® -r 3-- Y68 our Success(cid:2) UUUVVVXCioSHlnstrli™XuCtFaaa(cid:2)E ®g Fl MTe R(cid:2)PaFlx uE(cid:2) sT(cid:2)(cid:2) Sync-Lock™ (cid:3037)(cid:10106)™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1
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