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K S H 1 2 7 KSH127 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) 1 D-PAK 1 I-PAK • Electrically Similar to Popular TIP127 • Complement to KSH122 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted Equivalent Circuit C C Symbol Parameter Value Units V Collector-Base Voltage - 100 V CBO V Collector-Emitter Voltage - 100 V CEO B V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 8 A C I Collector Current (Pulse) - 16 A CP I Base Current - 120 mA B R1 R2 P Collector Dissipation (T =25°C) 20 W C C R1≅8kΩ E Collector Dissipation (Ta=25°C) 1.75 W R2≅0.12kΩ T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) *Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 - 100 V CEO C B I Collector Cut-off Current V = - 50V, I = 0 - 10 µA CEO CE B I Collector Cut-off Current V = - 100V, I = 0 - 10 µA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO EB C h *DC Current Gain V = - 4V, I = - 4A 1000 12K FE CE C V = - 4V, V = -8A 100 CE EB V (sat) *Collector-Emitter Saturation Voltage I = - 4A, I = - 16mA - 2 V CE C B I = - 8A, I = - 80mA - 4 V C B V (sat) *Base-Emitter Saturation Voltage I = - 8A, I = - 80mA - 4.5 V BE C B V (on) *Base-Emitter On Voltage V = -4V, I = - 4A - 2.8 V BE CE C C Output Capacitance V = - 10V, I = 0 300 pF ob CB E f= 0.1MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

K Typical Characteristics S H 1 2 7 10k GE -10 VCE = -4V TA IC = 250 IB L O V N VBE(sat) N O GAI ATI -1 C CURRENT 1k at)[V], SATUR -0.1 VCE(sat) h, DFE at), V(sCE 100 V(sBE -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 V = -30V IC=C 250I IC= -I B B1 B2 NCE 100 TIME 1 A N CIT N O tR A R C[pF], CAPob 10 µt,t [s], TURD 0.1 tD, VBE(off)=0 1 -0.1 -1 -10 -100 0.01 -0.1 -1 -10 VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 10 -100 V = -30V IC=C 250I µs], TURN OFF TIME 1 tSTG ICB1= -IB2B LECTOR CURRENT -1-10 DC5m1sm5s001µ0s0µs t,t [STGF tF A], COL -0.1 I[C -0.01 0.1 -1 -10 -100 -1000 -0.1 -1 -10 I[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE C Figure 5. Turn Off Time Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

K Typical Characteristic (Continued) S H 1 2 7 25 N 20 O TI A P SI 15 S DI R WE 10 O P W], P[C 5 0 0 25 50 75 100 125 150 175 TC[oC], CASE TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

K Package Dimensions S H 1 2 7 D-PAK 6.60 ±0.20 5.34 ±0.30 0.20 2.30 ±0.10 ± (0.50) (4.34) (0.50) 0.70 0.50 ±0.10 0 2 0.20±0.60 0. ±2.70 0.20 ±6.10 0.20 ±9.50 0.30 ±0.91 0.10 N0.55 ±0 MI 8 0. 0 1 0. MAX0.96 0.76 ±0.10 ±89 0.50 ±0.10 0. 2.30TYP 2.30TYP 1.02 ±0.20 [2.30±0.20] [2.30±0.20] 2.30 ±0.20 6.60 ±0.20 (5.34) (5.04) 0) 0) 0) 7 9 0 (1.50) 0. 0. 1. ( ( ( ±9.50 0.30 ±6.10 0.20 ±2.70 0.20 (2XR0.25) 0.10)(3.05) ( 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

K Package Dimensions (Continued) S H 1 2 7 I-PAK 6.60 ±0.20 2.30 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 0 2 ±0 0. ±0.20 0.20 0.6 70 ±0 0. 6.1 0 1 0 ±0. 0.3 80 ±0 0. 0.20 16.1 MAX0.96 ±0 30 8 0. 1. ±0 3 0.76 ±0.10 9. 2.30TYP 2.30TYP 0.50 ±0.10 [2.30±0.20] [2.30±0.20] Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

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