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K S E 8 0 0 KSE800/801/802/803 / 8 0 1 / 8 Monolithic Construction With Built-in Base- 0 2 Emitter Resistors / 8 • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC 0 • Complement to KSE700/701/702/703 3 1 TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C V Collector- Base Voltage : KSE800/801 60 V CBO : KSE802/803 80 V VCEO Collector-Emitter Voltage : KSE800/801 60 V B : KSE802/803 80 V V Emitter-Base Voltage 5 V EBO I Collector Current 4 A C I Base Current 0.1 A R1 R2 B PC Collector Dissipation (TC=25°C) 40 W R1≅10kΩ E T Junction Temperature 150 °C R2≅0.6kΩ J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage CEO : KSE800/801 I = 50mA, I = 0 60 V C B : KSE802/803 80 V I Collector Cut-off Current CEO : KSE800/801 V = 60V, I = 0 100 µA CE B : KSE802/803 V = 80V, I = 0 100 µA CE B I Collector Cut-off Current V = Rated BV , I = 0 100 µA CBO CB CEO E V = Rated BV , I = 0 500 µA CB CEO E T = 100°C C I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO BE C hFE DC Current Gain : KSE800/802 VCE = 3V, IC = 1.5A 750 : KSE801/803 V = 3V, I = 2A 750 CE C : ALL DEVICES V = 3V, I = 4A 100 CE C V (sat) Collector-Emitter Saturation Voltage CE : KSE800/802 I = 1.5A, I = 30mA 2.5 V C B : KSE801/803 I = 2A, I = 40mA 2.8 V C B : ALL DEVICES I = 4A, I = 40mA 3 V C B V (on) Base-Emitter ON Voltage BE : KSE800/802 V = 3V, I = 1.5A 2.5 V CE C : KSE801/803 V = 3V, I = 2A 2.5 V CE C : ALL DEVICES V = 3V, I = 4A 3 V CE C ©2001 Fairchild Semiconductor Corporation Rev. A3, June 2001

K Typical Characteristics S E 8 0 0 /8 5 10000 0 IB= 500µA VCE = 3V 1 / I(A),COLLECTOR CURRENTC 1234 IB= 35IB0=µ A400µIAB= 450µA IIIIIBIBBBBB====== 2 1531255000000µ000µAµµµµAAAAA h, DC CURRENT GAINFE 1100000 802/803 00 1 2 3 4 5 100.01 0.1 1 10 VCE(V),COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain GE 100 1000 TA IC = 500 IB f=0.1MHZ L VO IE=0 N O E ATI 10 NC 100 R A TU CIT V], SA VBE(sat) CAPA at)[ 1 F], 10 V(sCE VCE(sat) C[pob at), s V(BE 0.1 1 0.01 0.1 1 10 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance Base-Emitter Saturation Voltage 100 60 50 NT ON OLLECTOR CURRE 101 D.C.5ms1ms 100µs POWER DISSIPATI 234000 I[A], CC KSE800/801 P[W], C 10 KSE802/803 0.1 0 1 10 100 1000 0 25 50 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A3, June 2001

K Package Demensions S E 8 0 0 / 8 0 1 / TO-126 8 0 2 / 8 0 0 3 1 ±0 0. 8.00 ±0.30 3.25 ±0.20 9 3. 0 2 0. AX ±0 ø3.20 ±0.10 20M 11.0 4. 1 (1.00) (0.50) 0.75 ±0.10 1.75 ±0.20 1.60 ±0.10 0 2 0.75 ±0.10 ±0.30 ±10 0. 6 6. 0 1 3. 1 #1 +0.10 2.28TYP 2.28TYP 0.50–0.05 [2.28±0.20] [2.28±0.20] Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A3, June 2001

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