Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

K S D 8 8 0 KSD880 Low Frequency Power Amplifier (cid:127) Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 3 A C I Base Current 0.3 A B P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 60V, I = 0 100 µA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 100 µA EBO EB C BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 60 V CEO C B h DC Current Gain V = 5V, I = 0.5A 60 300 FE1 CE C h V = 5V, I = 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A, I = 0.3A 0.4 1 V CE C B V (on) Base-Emitter On Voltage V = 5V, I = 0.5A 0.7 1 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 3 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 1MHz 70 pF ob CB E t Turn ON Time V = 30V, I = 1A 0.8 µs ON CC C tSTG Storage Time IB1 = - IB2 = 0.2A 1.5 µs t Fall Time RL = 30Ω 0.8 µs F h Classification FE Classification O Y G h 60 ~ 120 100 ~ 200 150 ~ 300 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000

K Typical Characteristics S D 8 8 0 4 1000 V = 5V I = 90mA CE NT IBB = 80mA OR CURRE 3 IBI B= I =B7 I =B06 m0=5m 0A4mA0mAA ENT GAIN T 2 I = 30mA R 100 C B R OLLE IB = 20mA C CU I[A], CC 1 IB = 10mA h, DFE I = 0 0 B 10 0 2 4 6 8 0.01 0.1 1 10 V [V], COLLECTOR-EMITTER VOLTAGE I[A], COLLECTOR CURRENT CE C Figure 1. Static Characteristic Figure 2. DC current Gain 4 GE 10 A T I = 10 I VCE = 5V OL C B ENT 3 ON V URR RATI 1 C U R T ECTO 2 V], SA I[A], COLLC 1 at), V(sat)[CE 0.1 VCE(sat) 0 V(sBE 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 V [V], BASE-EMITTER VOLTAGE I[A], COLLECTOR CURRENT BE C Figure 3. Base-Emitter On Voltage Figure 4. Collector-Emitter Saturation Voltage vs Collector Current 10 40 I(Pulse) MAX. C 35 CURRENT IC(Continous) MAX. 100m1s0ms1s 1ms SIPATION 2350 TOR 1 DC(T R DIS 20 LLEC C=25℃) OWE 15 O P I[A], CC V MAX.CEO P[W], C 105 0.1 0 1 10 100 0 25 50 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000

K Package Demensions S D 8 8 0 TO-220 9.90 ±0.20 4.50 ±0.20 (1.70) ±1.30 0.10 ø3.6(80. 7±00.)10 ±2.80 0.10 1.30+–00..0150 0) X. ±0 0.20 (3.7 ±90 0.20 8.95MA 9.2 46) 0) 15. 1 (1. 3.0 ( (4 5 ° ) 0 0) ±3.08 0.2 1.(1.027 ±0.10 1.52 ±0.10 ±8 0.30 1 0 0. 1 0.80 ±0.10 +0.10 0.50–0.05 2.40 ±0.20 2.54TYP 2.54TYP [2.54 ±0.20] [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ HiSeC™ SuperSOT™-8 Bottomless™ ISOPLANAR™ SyncFET™ CoolFET™ MICROWIRE™ TinyLogic™ CROSSVOLT™ POP™ UHC™ E2CMOS™ PowerTrench® VCX™ FACT™ QFET™ FACT Quiet Series™ QS™ FAST® Quiet Series™ FASTr™ SuperSOT™-3 GTO™ SuperSOT™-6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E

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