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K S C 5 July 2014 5 0 2 D / K S KSC5502D / KSC5502DT C 5 5 NPN Triple Diffused Planar Silicon Transistor 0 2 D T — 4 Features D-PAK Equivalent Circuit N P • High Voltage Power Switch Switching Application C N • Wide Safe Operating Area 1 T 4 • Built-in Free-Wheeling Diode TO-220 r i B p • Suitable for Electronic Ballast Application l e • Small Variance in Storage Time D • Two Package Choices : D-PAK or TO-220 E 1 if f u 1.Base 2,4.Collector 3.Emitter s e d P Ordering Information l a n a Part Number Top Mark Package Packing Method r S KSC5502DTM C5502D TO-252 3L (DPAK) Tape and Reel i l i c KSC5502DTTU C5502D TO-220 3L Rail o n T r a Absolute Maximum Ratings n s i Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- s t ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- o r tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. C Symbol Parameter Value Unit V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 2 A C I Collector Current (Pulse)(1) 4 A CP I Base Current (DC) 1 A B I Base Current (Pulse)(1) 2 A BP T Junction Temperature 150 °C J T Storage Temperature Range -65 to 150 °C STG EAS Avalanche Energy (T = 25°C) 2.5 mJ J Note: 1. Pulse test: Pulse width = 5 ms, duty cycle ≤ 10%. © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0

K S Thermal Characteristics C 5 Values are at T = 25°C unless otherwise noted. 5 C 0 2 KSC5502D KSC5502DT D Symbol Parameter Unit (D-PAK) (TO-220) / K P Collector Dissipation (T = 25°C) 87.83 118.16 W S C C C RθJC Thermal Resistance, Junction to Case 1.42 1.06 °C/W 5 5 RθJA Thermal Resistance, Junction to Ambient 111.0 62.5 °C/W 0 2 T Maximum Lead Temperature for Soldering Purpose: 270 °C D L 1/8 inch from Case for 5 seconds T — N Electrical Characteristics P N Values are at T = 25°C unless otherwise noted. C T r Symbol Parameter Conditions Min. Typ. Max. Unit i p l BV Collector-Base Breakdown Voltage I = 1 mA, I = 0 1200 1350 V e CBO C E D Collector-Emitter Breakdown BVCEO Voltage IC = 5 mA, IB = 0 600 750 V iff u BV Emitter-Base Breakdown Voltage I = 500 μA, I = 0 12.0 13.7 V s EBO E C e T = 25°C 100 d ICES Collector Cut-off Current VCES = 1200 V, VBE = 0 TCC = 125°C 500 μA Pla T = 25°C 100 n I Collector Cut-off Current V = 600 V, I = 0 C μA a CEO CE B TC = 125°C 500 r S I Emitter Cut-off Current V = 12 V, I = 0 T = 25°C 10 μA i EBO EB C C l i TC = 25°C 15 28 40 co V = 1 V, I = 0.2 A CE C T = 125°C 8 18 n C T T = 25°C 4.0 6.4 r h DC Current Gain V = 1 V, I = 1 A C a FE CE C T = 125°C 3.0 4.7 n C s VCE = 2.5 V, TC = 25°C 12 20 30 ist IC = 0.5 A TC = 125°C 6 12 or T = 25°C 0.31 0.80 C I = 0.2 A, I = 0.02 A C B T = 125°C 0.54 1.10 C Collector-Emitter Saturation TC = 25°C 0.15 0.60 V (sat) I = 0.4 A, I = 0.08 A V CE Voltage C B T = 125°C 0.23 1.00 C T = 25°C 0.40 1.50 C I = 1 A, I = 0.2 A C B T = 125°C 1.30 3.00 C T = 25°C 0.77 1.00 C I = 0.4 A, I = 0.08 A C B T = 125°C 0.60 0.90 C V (sat) Base-Emitter Saturation Voltage V BE T = 25°C 0.83 1.20 C I = 1 A, I = 0.2 A C B T = 125°C 0.70 1.00 C C Input Capacitance V = 8 V, I = 0, f = 1 MHz 385 500 pF ib EB C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 60 100 pF ob CB E f Current Gain Bandwidth Product I = 0.5 A,V = 10 V 11 MHz T C CE T = 25°C 0.75 1.20 C I = 0.2 A F T = 125°C 0.59 C V Diode Forward Voltage T = 25°C 0.80 1.30 V F C I = 0.4 A F T = 125°C 0.64 C I = 1 A T = 25°C 0.90 1.50 F C © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 2

K S Electrical Characteristics C 5 Values are at T = 25°C unless otherwise noted. 5 C 0 2 Symbol Parameter Conditions Min Typ. Max. Unit D IF = 0.2 A 650 / K Diode Froward Recovery t I = 0.4 A 740 ns S fr Time (di/dt=10 A/μs) F C IF = 1 A 785 5 5 I = 0.4 A, I = 80 mA, at 1 μs 7.2 0 C B1 2 VCC = 300 V at 3 μs 1.8 D VCE(DSAT) Dynamic Saturation Voltage IC = 1 A, IB1 = 200 mA, at 1 μs 18.0 V T — VCC = 300 V at 3 μs 6.0 N Resistive Load Switching (D.C < 10%, Pulse Width = 20 s) P T = 25°C 175 350 N tON Turn-On Time IC = 0.4 A, IB1 = 80 mA, TC = 125°C 185 ns Tr tOFF Turn-Off Time IRBL2 == 705.20 AΩ, VCC = 300 V, TTCCC == 2152°5C°C 22..16 3.0 μs iple D tON Turn-On Time IICB2 = = 1 1 A6,0 I Bm1A =, 160 mA, TTCC == 2152°5C°C 234100 450 ns iffuse tOFF Turn-Off Time VRCL C= =3 0300 0Ω V, TTC == 2152°5C°C 34..75 5.0 μs d P C l a Inductive Load Switching (V = 15 V) n CC a T = 25°C 1.2 2.0 r tSTG Storage Time TCC = 125°C 1.5 μs Sil IC = 0.4 A, IB1 = 80 mA, T = 25°C 90 200 ic t Fall Time I = 0.2 A, V = 300 V, C ns o F B2 Z T = 125°C 65 n LC = 200 H C T t Cross-Over Time TC = 25°C 185 350 ns ra C T = 125°C 145 n C s tSTG Storage Time TTC == 2152°5C°C 33..7305 4.50 μs isto IC = 0.8 A, IB1 = 160 mA, C r t Fall Time IB2 = 160 mA, TC = 25°C 90 250 ns F VCC = 300 V, TC = 125°C 160 LC = 200 H T = 25°C 300 600 C t Cross-over Time ns C T = 125°C 570 C © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 3

K S Typical Performance Characteristics C 5 5 0 2 D 3 / K 1A RRENT 90800m07m0A06Am050A0m0AmA N 100 TJ=125oC VCE=1V SC55 OR CU 2 40300m0mAA NT GAI TJ=25oC 02D I[A], COLLECTC1 IB2=0100m0mAA h, DC CURREFE 10 T — NP N T 00 1 2 3 4 5 6 7 11m 10m 100m 1 rip V [V], COLLECTOR EMITTER VOLTAGE I [A], COLLECTOR CURRENT) l CE C e Figure 1. Static Characteristic Figure 2. DC Current Gain D i f f u s e d P l IC=5IB IC=10IB a n 10 10 a V(V), VOLTAGECE(sat) 1 TJ=125oC V(V), VOLTAGECE(sat) 1 TJ=125oC r Silicon T TJ=25oC TJ=25oC ran 0.1 0.1 s i s 1m 10m 100m 1 1m 10m 100m 1 to I (A), COLLECTOR CURRENT I (A), COLLECTOR CURRENT r C C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 2 10 TJ=25oC IC=10IB 2.0A 1.5A E E G G TA 1.0A TA L L V], VO 1 0.4A V], VO 1 TJ=25oC V[CE IC=0.2A V[BE TJ=125oC 0 0.1 1m 10m 100m 1 1m 10m 100m 1 I[A], BASE CURRENT I [A], COLLECTOR CURRENT B C Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Voltage © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 4

K S Typical Performance Characteristics (Continued) C 5 5 0 2 D / 10 10 K S IC=5IB C 5 5 E E 0 V], VOLTAG 1 TJ=25oC V], VOLTAG 1 TJ=25oC 2DT — V[BE TJ=125oC V[FD TJ=125oC N P N T r 0.1 0.1 i 1m 10m 100m 1 1m 10m 100m 1 p IC[A], COLLECTOR CURRENT IFD[A], FORWARD CURRENT le Figure 7. Base-Emitter Saturation Voltage Figure 8. Diode Forward Voltage D i f f u s e d 1000 2000 P Cib F=1MHz IVPCWC=C5==IB32100=0μ2VsIB2 lan a E[pF] 11008900000000 r S C E 700 CAPACITAN 100 Cob t[ns],TIMON 345600000000 TJ=125oC ilicon TJ=25oC Tr 200 a n s i s 101 10 100 1100000.3 0.5 1 1.5 2 2.5 3 to REVERSE VOLTAGE[V] IC[A], COLLECTOR CURRENT r Figure 9. Collector Output Capacitance Figure 10. Resistive Switching Time, t on 5 4.5 2000 3.54 IVPC=CWC5==IB3210=002μVIsB2 IVPC=cW=53=IB0210=0V5μIsB2 11000000 3 890000 TJ=125oC E E 700 μt(s),TIMON2.25 TJ=125oC t(ns),TIMON 345600000000 TJ=25oC 1.5 TJ=25oC 200 1 110000 0.3 0.5 1 1.5 2 2.5 3 0.3 0.5 1 1.5 2 2.5 3 I[A], COLLECTOR CURRENT I [A], COLLECTOR CURRENT C C Figure 11. Resistive Switching Time, t Figure 12. Resistive Switching Time, t off on © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 5

K S Typical Performance Characteristics (Continued) C 5 5 0 2 D 7 3 / K 6.5 5.556 IVPC=cW=53=IB0210=0V5μIsB2 2.5 IVVLCCCZ===C5=32I1B001500=VVμ2HIB2 SC55 μt(s),TIMEON 34..545 TJ=25oC TJ=125oC μt(s),TIMESTG 1.52 TJ=125oC 02DT — 3 TJ=25oC N P 2.5 N T 20.3 0.5 1 1.5 2 2.5 3 10.3 0.5 1 1.5 2 2.5 3 rip IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT le Figure 13. Resistive Switching Time, t Figure 14. Inductive Switching Time, t D off STG i f f u s e d 110 600 1089000 IVVLCC=CZ==C5=23IB1001500=VμV2HIB2 344555050500000 IVVLCC=CZ==C5=23I1B001500=VμV2HIB2 Planar S t(ns),TIMEF 6700 TJ=25oC TJ=125oC t[ns],TIMEC 223050000 TJ=125oC ilicon TJ=25oC Tr 50 150 a n s i s 400.3 0.5 1 1.5 2 2.5 3 1000.3 0.5 1 1.5 2 2.5 3 to IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT r Figure 15. Inductive Switching Time, t Figure 16. Inductive Switching Time, t F c 5 1000 900 4.45 IVVLCC=CZ==C5=23I1B001500=VμV5HIB2 TJ=125oC 456780000000000 IVVLCC=CZ==C5=23IB1001500=VμV5HIB2 ME 3.5 ME 300 TJ=125oC μt[s],TISTG 3 TJ=25oC t[ns],TIF 200 TJ=25oC 2.5 100 90 80 70 60 2 50 0.3 0.5 1 1.5 2 2.5 3 0.3 0.5 1 1.5 2 2.5 3 I [A], COLLECTOR CURRENT I [A], COLLECTOR CURRENT C C Figure 17. Inductive Switching Time, t Figure 18. Inductive Switching Time, t STG F © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 6

K S Typical Performance Characteristics (Continued) C 5 5 0 2 D 2000 2.0 / K 11008900000000 IVVLCC=CZ==C5=23I1B001500=VμV5HIB2 TJ=125oC 11..68 IC=0.8A IVVLCC=CZ==C2=23I1B002500VμVH SC550 t[ns],TIMESTG 345670000000000 TJ=25oC μt, TIME[s]STG 111...024 TTJJ==12255oCoC 2DT — N 200 0.8 IC=0.4A PN 0.6 T 1100000.3 0.5 1 1.5 2 2.5 3 0.44 5 6 7 8 9 10 11 12 13 14 rip IC[A], COLLECTOR CURRENT hFE, FORCED GAIN le Figure 19. Inductive Switching Time, t Figure 20. Inductive Switching Time, t D c STG i f f u s e d 200 80 IC=0.8A IVVLCCCZ===C2=32I1B002500VVμH IVVLCCCZ===C2=32I1B002500VVμH Plana r 160 t, TIME[ns]F 60 TTJJ==12255oCoC t, TIME[ns]C 120 IC=0.8A TTJJ==12255oCoC Silicon T r IC=0.4A a 40 IC=0.4A n s i s 4 5 6 7 8 9 10 11 12 13 14 804 5 6 7 8 9 10 11 12 13 14 to hFE, FORCED GAIN hFE, FORCED GAIN r Figure 21. Inductive Switching Time, t Figure 22. Inductive Switching Time, t F c 10 140 TC=25oC 130 5ms 1ms 50μs 120 CTOR CURRENT 1 DC R DISSIPATION 110178900000 D-PAK TO-220 COLLE 0.1 POWE 5600 A], W], 40 I[C P[C 30 20 10 0.01 0 10 100 1000 0 25 50 75 100 125 150 175 200 VCE[A], COLLECTOR EMITTER VOLTAGE TC(oC), CASE TEMPERATURE Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 7

K S Typical Performance Characteristics (Continued) C 5 5 0 2 D 10 10 / C A K J J o o 1 S Z Z 0.5 pedance 1 0.5 pedance 0.1 0000..0.0.1225 C550 m 0.2 m0.01 2 hermal i 0.1 000...0000.1251 hermal i1E-3 0.01 DT — alized T0.01 Single alized T1E-4 NP m m or or1E-5 Single N N N T 1E-31E-5 1E-4 1E-3 0.01 0.1 1 1E-61E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 rip t, Rectangular Pulse Duration t, Rectangular Pulse Duration l e Figure 25. ZoJC, Transient Thermal Impedance Figure 26. ZoJA, Transient Thermal Impedance D i (D-PAK) (D-PAK) f f u s e d 10 10 P JC JA la Zo Zo 1 0.5 n e e 0.2 a mal impedanc 0.11 0000.0...1525 mal impedanc0.00.11 0000...0.001125 r Silico er 0.02 er1E-3 n h 0.01 h T T T alized 0.01 Single alized 1E-4 ran orm orm1E-5 Single si N N s t o 1E-3 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 r t, Rectangular Pulse Duration t, Rectangular Pulse Duration Figure 27. ZoJC, Transient Thermal Impedance Figure 28. ZoJA, Transient Thermal Impedance (TO-220) (TO-220) © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 8

K S Physical Dimensions C 5 5 0 2 D / K S C 5 5 0 2 D T — N P N T r i p l e D i f f u s e d P l a n a r S i l i c o n T r a n s i s t o r Figure 29. TO-252 (D-PAK), MOLDED, 3-LEAD, OPTION AA & AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO252A03.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO252A03.pdf. © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 9

K S Physical Dimensions C 5 5 0 2 D / K S C 5 5 0 2 D T — N P N T r i p l e D i f f u s e d P l a n a r S i l i c o n T r a n s i s t o r Figure 30. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf. © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0 10

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