Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

K S C 2 October 2014 3 8 3 — N P KSC2383 N E NPN Epitaxial Silicon Transistor p i t a x i a l S i l i c o n T r a n s 1 TO-92L is t 1. Emitter 2. Collector 3. Base o r Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 1 A C I Base Current 0.5 A B T Junction Temperature 150 °C J T Storage Temperature -55 to +150 °C STG © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2383 Rev. 1.1.0

K S Thermal Characteristics(1) C 2 Values are at T = 25°C unless otherwise noted. 3 A 8 3 Symbol Parameter Value Unit — Power Dissipation 900 mW N PD Derate Above 25°C 7.2 mW/°C P N RθJA Thermal Resistance, Junction-to-Ambient 138 °C/W E p i Note: t a 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. x i a l S i l Electrical Characteristics ic o Values are at T = 25°C unless otherwise noted. n A T r Symbol Parameter Conditions Min. Typ. Max. Unit a n I Collector Cut-Off Current V = 150 V, I = 0 1 μA s CBO CB E i s I Emitter Cut-Off Current V = 6 V, I = 0 1 μA t EBO EB C o r BV Collector-Emitter Breakdown Voltage I = 10 mA, I = 0 160 V CEO C B h DC Current Gain V = 5 V, I = 200 mA 60 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 500 mA, I = 50 mA 1.5 V CE C B V (on) Base-Emitter On Voltage V = 5 V, I = 5 mA 0.45 0.75 V BE CE C f Current Gain Bandwidth Product V = 5 V, I = 200 mA 20 100 MHz T CE C V = 10 V, I = 0, C Output Capacitance CB E 20 pF ob f = 1 MHz h Classification FE Classification R O Y h 60 ~ 120 100 ~ 200 160 ~ 320 FE © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2383 Rev. 1.1.0 2

K S Typical Performance Characteristics C 2 3 8 3 — 1.4 1000 EMITTER COMMON EMITTER COMMON N T 1.2 Ta=25oC P N E I = 15mA N Ic[mA], COLLECTOR CURR 00001.....24680 B IB = 10mIAB = I6B Im=BI AB=4I B IIm=3 BB= mA2== 2. A511mmm.5AAmAA h, DC CURRENT GAINFE 10100 VCE=V5VCE=10V Epitaxial Silic I = 0.5mA B o 0.00.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 110 100 1000 n T VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT ra n s Figure 1. Static Characteristic Figure 2. DC Current Gain i s t o r 1000 GE 1 EMITTER COMMON A EMITTER COMMON T Ta = 25oC OL Ta = 25oC V N N O C CURRENT GAI 100 VCE=10VVCE=5V at)[V], SATURATI 00.0.11 IC/IIBC=/I5B=10 h, DFE VCE=1V at), V(sCE 10 V(sBE 1E-3 100 1000 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 1.0 1000 EMITTER COMMON EMITTER COMMON IC/IB=10 f = 1MHz NT 0.8 Ta = 25oC CURRE 0.6 TANCE 100 R CI O A T P C A E 0.4 C A], COLL 0.2 C[pF], ob 10 I[C 0.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1 10 100 1000 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2383 Rev. 1.1.0 3

K S Typical Performance Characteristics (Continued) C 2 3 8 3 — DUCT 1000 EMITTER COMMON 10 N RO Ta = 25oC IC MAX. (Pulse) P DTH P RENT 1 100ms10ms1ms N E BANDWI 100 OR CUR 0.1 IC MAX.=1A pita CURRENT GAIN 10 I[A], COLLECTC 0.01 DC Ta=25Co V MAX.CEO xial Silic Hz], 1 1E-3 on f[MT 1 10 100 1000 1 10 100 1000 T IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE ra n s Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area i s t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2383 Rev. 1.1.0 4

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